Luminescent properties of Ba3Gd（BO3）3：Eu^3＋ phosphor for white LED applications

Luminescent material Ba3Gd(BO3)3 doped with Eu3+ ion was prepared by high temperature solid-state method. The preparing conditions, luminescent properties, and particle morphology of Ba3Gd(BO3)3:Eu3 + phosphor were studied with X-ray diffraction (XRD), fluorescence spectroscopy, and scanning electron microscopy (SEM). The results obtained by XRD showed that pure phase of Ba3Gd(BO3)3 was obtained at 1000℃. Images from SEM displayed that the particles of Ba3Gd(BO3)3:Eu3+ phosphor had a spherical shape with an average diameter of about 200-400 nm. The luminescence spectra showed that Ba3Gd(BO3)3:Eu3+ phosphor was effectively excited by the near ultraviolet (UV) light (396 nm) and blue light (466 nm). The main emission peaks of Ba3Gd(BO3)3:Eu3+ phosphor were assigned to the supersensitive transition 5D0-7F2 (611 and 616 nm) of Eu3+ ion when samples were excited at 255 and 396 nm, respectively, and the luminescent intensity of Ba3Gd(BO3)3:Eu3+ at 611 and 616 nm reached to the maximum when the doped content of Eu3+ ion was 10mol.%. Therefore, this phosphor could be a promising red component for possible applications in the field of white LED.     

氧化钆对钛酸钡陶瓷结构和介电性能的影响

采用固相法制备得到了掺杂 1% (mol) Gd2 O3的钛酸钡陶瓷 ,并通过 X射线衍射分析和扫描电镜对其结构进行了表征。对其介电常数、介电损耗和室温电阻率进行了测定 ,结果表明 Gd2 O3掺杂 Ba Ti O3陶瓷的介电常数明显增加 ,介电损耗也有所升高 ,室温电阻率明显降低     

Effects of Nd, Sm, Gd, Dy, Er Dopant on Electrical Properties of BaTiO3 Ceramics

BaTiO3 ceramics doped with various quantities of Nd2O3, Sm2O3, Gd2O3, Dy2O3 and Er2O3 were prepared respectively ( the adulterate concentrations were 0. 001,0. 002, 0. 003, 0.005, 0. 007 mol fraction) through a sol-gel method and their electrical properties were researched. It is found that each adulteration of Nd2O3, Sm2O3 Gd2O3,Dy2O3 and Er2O3 all can make the resistivity of BaTiO3 ceramics decline , especially Sm2O3 and Gd2O3. When the addition of Sm2O3 is 0. 001 mol, the resistivity is the smallest, declining from 4.0 × 1012 to 6.5 × 103 Ω different kind of rare earth exhibits different regularity. The grain resistance of BaTiO3 ceramics doped with Sm2O3 or Gd2O3 exhibits a NTC effect, at the same time the grain boundary resistance has a PTC effect, and the grain boundary resistance is much larger than the grain resistance, so the PTC effects of BaTiO3 ceramics doped with Sm2O3 or Gd2O3 originate from the grain boundary. The additions of Nd2O3 , Gd2O3 or Er2O3 make the dielectric constant and the dielectric loss of BaTiO3 ceramics change evidently, especially Nd2O3. The dielectric constant is larger than that of pure BaTiO3 ceramics, on the other hand, the dielectric loss is much lower, which is useful in capacitor fields.     

Vacuum ultraviolet excited photoluminescence properties of Gd2O2CO3:Eu3+ phosphor

The Gd2O2CO3:Eu3 with type-II structure phosphor was successfully synthesized via flux method at 400℃ and their photoluminescence properties in vacuum ultraviolet (VUV) region were examined. The broad and strong excitation bands in the range of 153-205 nm owing to the CO32- host absorption and charge transfer (CT) of Gd3 -O2- were observed for Gd2O2CO3:Eu3 . Under 172 nm excitation, Gd2O2CO3:Eu3 exhibited strong red emission with good color purity, indicating Eu3 ions located at low symmetry sites and the chromaticity coordination of luminescence for Gd2O2CO3:Eu3 was (x=0.652, y=0.345). The photoluminescence quenching concentration of Eu3 excited by 172 nm for Gd2O2CO3:Eu3 was about 5%. Gd2O2CO3:Eu3 would be a potential VUV-excited red phosphor applied in mercury-free fluorescent lamps.     

Phase control of magnetron sputtering deposited Gd2O3 thin films as high-κ gate dielectrics

Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si(001) substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density (JL) of 10-5 A/cm2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.     

掺杂稀土元素的高温钼合金的研究

介绍了国内外掺杂稀土元素的高温钼合金的研究情况。对Y2O3、La2O3、NdO3、Sm2O3、Gd2O3五种稀土元素掺入钼丝和未掺入钼丝了进行研究。结果表明,掺杂钼丝比未掺杂钼丝具有更高的再结晶温度和高温下更好的抗变形性能。目前这种掺有稀土元素的钼合金已被研制出,并得到广泛的应用,市场前景看好。     

Bi2O3、Dy2O3掺杂对8YSZ导电性能的影响

用柠檬酸溶胶-凝胶法制备了分别掺Bi2O3和Dy2O3的8YSZ前驱体凝胶,凝胶在500℃预烧,压制成圆片状后在1 300℃煅烧2 h。分别研究Bi2O3和Dy2O3的不同掺量对试样的致密度、电导率的影响。结果表明Bi2O3可促进试样的烧结,在300～400℃掺Bi2O3可提高试样的电导率,在400～700℃掺Bi2O3使试样的电导率下降。在8YSZ试样中掺Dy2O3后,试样的致密度、电导率均降低。     

Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator

This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared with pure HfO2,the doped HfO2 with an optimum concentration of Gd2O3 as MOS gate dielectric exhibited a lower leakage current,thinner effective oxide thickness and less fixed oxide charges density.The result indicated that Gd2O3 doping power of 60 W exhibited the best electrical characteristics,maximum capacitance,lowest leakage current of 9.35079...     

Influence of Rare Earth Elements on Luminescent Properties of Y2SiO5:Tb

Photoluminescent(PL) and cathodoluminescent(CL) properties of rare earths (Sc3 , La3 , Gd3 and Lu3 ) doped (Y0.97Tb0.03)2SiO5 were studied. Rare earth doping clearly influences PL and CL properties of Y2SiO5:Tb. For La3 doped system, PL intensity increases nearly 10% at x=0.05 whereas for Lu3 doped system, the intensity increases about 20% at x=0.20. Gd3 doping and Sc3 doping reduce the intensity; at x=0.3, it is reduced about 30% for Gd3 doped system and about 15% for Sc3 doped system, respectively. Quenching concentration of activator became higher in rare earth doped samples, which may be understood by that the rare earth dopants might dilute the concentration of the activator. Additionally, doping also influences the color saturation of Y2SiO5:Tb. Sc3 , La3 , and Gd3 doping improve the color saturation, whereas Lu3 doping decreases the color saturation. CL measurements show that CL intensity increases for all rare earths doped systems. The energy transfer from Gd3 to Tb3 was discussed.     

Photoluminescence Characteristics of Gd2Mo3O9 ： Eu Phosphor Particles by Solid State Reaction Method

Eu^3＋-doped Gd2Mo3O9 was prepared by solid-state reaction method using Na2CO3 as flux and characterized by powder X-ray diffractometry. According to X-ray diffraction, this material belonged to a tetragonal system with space group I41/α. The effects of flux content and sintering temperature on the luminescent properties were investigated with the emission and excitation spectra. The results showed that flux content and sintering temperature had effects on the luminescent properties, the optimized flux content and the best temperature was 3 % and 800 ℃ respectively. The excitation and emission spectra also showed that this phosphor could be effectively excited by C-T band （280 nm）, ultraviolet light 395 nm and blue light 465 nm. The wavelengths at 395 and 465 nm were nicely fitting in with the widely applied output wavelengths of ultraviolet or blue LED chips. Integrated emission intensity of Gd2Mo3O9 ： Eu was twice higher than that of Y2O2S ： Eu^3 ＋ under 395 nm excitation. The Eu^3＋ doped Gd2Mo309 phosphor may be a better candidate in solid-state lighting applications.     

Fabrication and Luminescence Properties of Ca2Gd8(SiO4)6O2:Er3+ Phosphors via Sol-Gel Process

Ca2RE8(SiO4)6O2 (RE=Y, Gd, La) is a kind of ternary rare-earth-metal silicate with the oxyapatite structure, which was used as host materials for the luminescence of various rare earth and mercury-like ions. Ca2Gd8(SiO4)6O2:Er3 phosphors were prepared through the sol-gel process. X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence spectra were used to characterize the resulting phosphors. The results of XRD indicate that the phosphors crystallized completely at 1000 ℃. SEM study reveals that the average grain size is 400～1000 nm. In Ca2Gd8(SiO4)6O2:Er3 phosphors, the Er3 shows its characteristic green emission at 528 nm (2H11/2-4I15/2) and 548 nm(4S3/2-4I15/2) upon excitation into 382 nm, with an optimum doping concentration of 5% (mole fraction) of Gd3 in the host lattices.     

Effects of neodymium and gadolinium on weathering resistance of ZnO-B2O3-SiO2 glass

The ZnO-B203-SiO2 glass doped with Nd2O3 and Gd2O3 was prepared by high temperature melt cooling method. The standard sample of the zinc borosilicate glass was placed in the constant temperature and humidity chamber in order to simulate the atmospheric corrosion process. The surface of the weathered glass was analyzed by scanning electron microscope and energy disper- sive spectrometry and the filtrate was analyzed by inductively coupled plasma-atomic emission spectrometry. The results showed that humidity was the most important factor influencing weathering; the morphology of glass surface of altered layer and the product on the surface was observed; the corroding degree of the zinc borosilicate glass doped with Nd or Gd was significantly lighter than that of the base glass. Adding rare earth Nd or Gd in the zinc borosilicate glass could suppress Na, Zn, Si ion release in weathering.     

Synthesis of gadolinium aluminate thin film by ion beam sputtering sequential deposition

Sequentially deposited by thin film synthesis consisted of multilayer precursor film deposition and thermal treatment. It is especially useful in complex-ingredient or precise stoichoimetric controlling thin film synthesis. Gadolinium aluminate,a new good candidate system for many luminescence usages other than laser crystals,scintillation crystals,phosphors,contains many phases,such as Gd4Al2O9(GAM) ,GdAlO3(GAP) ,Gd3Al5O12(GAG) ,so precise stoichoimetry of the amorphous ingredient layers is very important to the final single phase film synthesis. In our work,Gd2O3 and Al amorphous layers(ingredients for gadolinium aluminate film) were deposited in a certain sequence on MgO(100) and Si(100) substrate by IM100(an ion beam sputtering instrument) . The multi-amorphous-layered precursor was annealed with two-step thermal treatment(diffusion at a low temperature and then crystallization at a high temperature) . The XRD(X-ray diffraction pattern) ,SEM(scanning electron microscope second electron image) and AES(Auger electron spectroscopy depth profiles) analyses were used to detect the film microstructures and properties. The analyses results showed that ion beam sputtering deposition could control ingredient stoichoimetric ratio by an in site depositing thickness measurement. During the two-step thermal treatment,diffusion at a low temperature would cost a rather long time to make the amorphous precursor film uniform(more than 120 h) ,and the suitable diffusion temperature should be around 400 oC. The crystallization temperature should be decided by the gadolinium aluminate phase types and cost rather less time(about 4 h) . The stable phases GAP and GAM should be annealed at 1300 oC or higher temperatures,but the metastable phase GAG should just be annealed at around 1100 °C.     

Gd2O3-HfO2栅介质薄膜的外延制备及Ge-MOS电学特性分析

以Gd2O3-HfO2( GDH)固溶氧化物作为靶材,采用脉冲激光沉积技术(PLD)在Ge(100)衬底上制备了GDH高k栅介质外延薄膜,其外延生长方式为“cube-on-cube”,GDH薄膜与Ge(100)衬底的取向关系为(100)GDH∥(100)Ge和[110] GDH∥[110]Ge.通过反射式高能电子衍射(RHEED)技术研究了激光烧蚀能量和薄膜沉积温度对薄膜晶体结构的影响,分析了二者与薄膜的取向关系,激光烧蚀能量对薄膜取向影响更为显著.得到较优的GDH外延薄膜沉积工艺为:激光烧蚀能量为3 J·cm-2、薄膜的沉积温度为600℃.用磁控溅射制备了Au/Ti顶电极和Al背电极,其中圆形的Au/Ti电极通过掩膜方法获得,直径为50μm.采用Keithley 4200半导体测试仪对所制备Au/Ti/GDH/Ge/Al 堆栈结构的Ge-MOS原型电容器进行电学特性分析,测试条件为:I-E测试的电场强度0～6MV·cm-1,C-V测试的频率300 kHz～1 MHz,结果表明,厚度为5nm的GDH薄膜具备良好介电性能:k-28,EOT ～0.49 nm,适于22 nm及以下技术节点集成电路的应用.     

Influence of annealing temperature on luminescent properties of Eu~(3+)/V~(5+) co-doped nanocrystalline Gd_2Ti_2O_7 powders

Nanosized Gd2(1-x)Eu2xTi2O7:yV5+ phosphors were prepared via sol-gel method and characterized with X-ray diffraction,Raman spectroscopy,diffuse reflectance spectra and photoluminescence spectra.Their PL properties were investigated as functions of the Eu3+ doping concentration and annealing temperature.The results indicated that the as-prepared samples showed a strong emission of Eu3+ under the irradiation of 303 nm.For Eu3+-doped Gd2Ti2O7,the orange emission at 586 nm was the strongest,which was correspond...     

铽在硫氧化镧基质中的光致发光

采用高温固相反应法制备了La2O2S∶Tb3+、La2O2S∶Tb3+,RE3+(RE=Dy,Gd,Ce,Sm)荧光粉样品并进行了相关表征。结果表明,合成样品的晶体结构与La2O2S相同,为六方晶系;荧光粉颗粒的形貌多为长方形片状;发射光谱由494 nm、545 nm、587 nm、622 nm的一系列锐发射峰组成。研究发现Tb3+的掺杂浓度对样品主发射峰545 nm的发光强度影响很大,且在摩尔分数x(Tb3+)=0.02时达到最强。稀土离子Dy3+、Gd3+对La2O2S∶Tb3+荧光粉的发光有明显的敏化作用。     

Photoluminescent properties of Ca2RE8(SiO4)6O2:A (RE=Y, Gd; A=Pb2+, Mn2+) phosphor films prepared by sol-gel process

Ca2RE8(SiO4)6O2:A (RE=Y, Gd; A=Pb2 , Mn2 ) phosphor films were dip-coated on quartz glass substrates through the sol-gel process. X-ray diffraction (XRD), photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. Under short wavelength UV excitation, the film showed a red emission with medium intensity. The decay curve of Mn2 luminescence in Ca2Gd8(SiO4)6O2:Pb Mn film could be fitted into a single exponential function. The lifetime of Mn2 was 10.21 ms in Ca2Gd8(SiO4)6O2.     

Raman spectra of RE2O3 （RE=Eu,Gd, Dy,Ho, Er,Tm, Yb,Lu, Sc and Y）：laser-excited luminescence and trace impurity analysis

Raman spectra of a series of cubic rare earth sesquioxides RE2O3 （RE=Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y） were investigated by Raman spectroscopy with both 532 and 785 nm laser lines. Abundant additional bands due to laser-excited lumines-cence were observed. For Eu2O3, Dy2O3, Ho2O3, Er2O3, Tm2O3 and Yb2O3, the luminescence mainly came from the intrinsic trivalent lanthanide ions, while for Gd2O3, Lu2O3, Sc2O3 and Y2O3, their luminescence were attributed to the trace impurities of other lumines-cent lanthanide ions such as Eu3＋, Nd3＋and Er3＋. This investigation confirmed Raman spectroscopy as a useful tool for detecting trace luminescent lanthanide impurities.     

Y2O3对NiCr-Cr3C2金属陶瓷涂层热腐蚀性能影响行为研究

本文利用超音速火焰喷涂技术(HVOF),在20G钢表面制备了掺杂1wt.%、3wt.%、5wt.%三种不同含量Y2O3的NiCr-Cr3C2金属陶瓷复合涂层,并探究了其在650℃,Na2SO4/K2SO4熔盐环境中的热腐蚀性能。利用扫描电镜(SEM)、显微硬度计、拉伸试验机等对涂层的微观结构和力学性能进行了表征,利用X射线衍射仪(XRD)、拉曼光谱、X射线能谱仪(EDS)对复合涂层热腐蚀产物形貌、物相进行分析。结果表明掺杂1wt.%Y2O3的NiCr-Cr3C2复合涂层结构致密、孔隙率低、结合强度高,显微硬度达到801HV。热腐蚀过程中掺杂Y2O3的NiCr-Cr3C2复合涂层表面均生成耐蚀性良好且致密的Cr2O3膜。随着Y2O3掺杂量的增加,涂层的耐热腐蚀性能先升高后下降,当Y2O3掺杂量为1wt.%时,复合涂层表现出最佳的耐热腐蚀性能。     

Fluorescence Properties of Eu3+/Gd3+/Citric Acid Mixed Complexes Doping in Silicon Rubber Matrix

Series of doped rare earth complexes-EuxGd(1-x)(CA)3·nH2O (CA=citric acid) were synthesized. Some characterizations were taken for these complexes. The experimental results shows that the doped rare earth complexes have the best fluorescence property when the ratio of Eu and Gd is from 0.7 to 0.3. Silicon rubber-based composites were prepared by mechanical blending the EuxGd(1-x)(CA)3·nH2O and silicon rubber. Then, the fluorescent property of the composites was studied. It is found that the fluorescence intensity of the composites increase linearly with the contents of the rare earth complexes increasing.