Synthesis of β-Si3N4 by Chemical Vapor Deposition

Beta-type CVD-Si₃N₄ plates (up to 1.1 mm thick) have been prepared by adding TiCl₄ vapor to the system SiCl₄-NH₃-H₂ at deposition temperatures of 1350° to 1450°C, while α-type or amorphous CVD-Si₃N₄ was obtained without TiCl₄ vapor at the same deposition temperature. Three to four wt % 777V was included in the β-type CVD-Si₃N₄ matrix. The density, preferred orientation, and lattice parameters of β-type CVD-Si₃N₄ were examined.     

Formation and Stability of β-Quartz Solid-Solution Phase in the Li-Si-Al-O-N System

The development of crystalline phases in lithium oxynitride glass-ceramics was examined, with particular emphasis placed on the effect of the nitrogen source (AlN or Si₃N₄) on the formation and stability of a β-quartz solid-solution ( ss ) phase. Oxynitride glasses derived from the Li-Si-Al-O-N system were heat-treated at temperatures up to 1200°C to yield glass-ceramics in which β-quartz( ss ) and β-spodumene( ss ) of approximate composition Li₂OAl₂O₃4SiO₂ formed as major phases and in which X-phase (Si₃Al₆O₁₂N₂) and silicon oxynitride (Si₂N₂O) were present as minor phases. The nitrogen-containing β-quartz( ss ) phase that was prepared with AlN was stable at 1200°C; however, the use of Si₃N₄ as the nitrogen source was significantly less effective in promoting such thermal stabilization. Lattice parameter measurements revealed that AlN and Si₃N₄ had different effects on the crystalline structures, and it was proposed that the enhanced thermal stability of the β-quartz( ss ) phase that was prepared with AlN was due to both the replacement of oxygen by nitrogen and the positioning of excess Al³⁺ ions into interstitial sites within the β-quartz( ss ) crystal lattice.     

Microstructure Tailoring for High Thermal Conductivity of β-Si3N4 Ceramics

β-Si₃N₄ ceramics sintered with Yb₂O₃ and ZrO₂ were fabricated by gas-pressure sintering at 1950°C for 16 h changing the ratio of "fine" and "coarse" high-purity β-Si₃N₄ raw powders, and their microstructures were quantitatively evaluated. It was found that the amount of large grains (greater than a few tens of micrometers) could be drastically reduced by mixing a small amount of "coarse" powder with a "fine" one, while maintaining high thermal conductivity (>140 W·(m·K)⁻¹). Thus, this work demonstrates that it is possible for β-Si₃N₄ ceramics to achieve high thermal conductivity and high strength simultaneously by optimizing the particle size distribution of raw powder.     

Microstructural Observations on Hot-Pressed Si3N4

The development of microstructure in hot-pressed Si_aN₄ was studiehd for a typical Si₃N₄ powder with and without BeSiN₂ as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si₃N₄ conversion and specific surface area showed that BeSiN₂ appears to increase the mobility of the system by enhancing densification, α- to β-Si₃N₄ transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase.     

Novel Two-Step Sintering Process to Obtain a Bimodal Microstructure in Silicon Nitride

A two-step sintering process is described in which the first step suppresses densification while allowing the α-to-β phase transformation to proceed, and the second step, at higher temperatures, promotes densification and grain growth. This process allows one to obtain a bimodal microstructure in Si₃N₄ without using β-Si₃N₄ seed crystals. A carbothermal reduction process was used in the first step to modify the densification and transformation rates of the compacts consisting of Si₃N₄, Y₂O₃, Al₂O₃, and a carbon mixture. The carbothermal reduction process reduces the oxygen:nitrogen ratio of the Y-Si-Al-O-N glass that forms, which leads to the precipitation of crystalline oxynitride phases, in particular, the apatite phase. Precipitation of the apatite phase reduces the amount of liquid phase and retards the densification process up to 1750°C; however, the α-to-β phase transformation is not hindered. This results in the distribution of large β-nuclei in a porous fine-grained β-Si₃N₄ matrix. Above 1750°C, liquid formed by the melting of apatite resulted in a rapid increase in densification rates, and the larger β-nuclei also grew rapidly, which promoted the development of a bimodal microstructure.     

Additive-Assisted Nitridation to Synthesize Si3N4 Nanomaterials at a Low Temperature

Starting from Si powder, NaN₃ and different additives such as N -aminothiourea, iodine, or both, Si₃N₄ nanomaterials were synthesized through the nitridation of silicon powder in autoclaves at 60°–190°C. As the additive was only N -aminothiourea, β-Si₃N₄ nanorods and α-Si₃N₄ nanoparticles were prepared at 170°C. If the additive was only iodine, α-Si₃N₄ dendrites with β-Si₃N₄ nanorods were obtained at 190°C. However, when both N -aminothiourea and iodine were added to the system of Si and NaN₃, the products composed of β-Si₃N₄ nanorods and α, β-Si₃N₄ nanoparticles could be prepared at 60°C.     

Ionic Conductivity of the System Si-Al-O-N from 850° to 1400°C

Electrical conductivity was measured from 850° to 1400°C for β-sialon and pure X phase as well as for the sintered system Si₃N₄-Al₂O₃, containing β-sialon, X phase, β-Si₃N₄, and glassy phase. Ionic conductivity was measured at >1000°C. The charge carriers were identified by electrolysis. The results showed that pure β-sialon is ionically conducting because of Si⁴⁺ migration for the temperature range studied. Pure X phase shows ionic conduction by Si⁴⁺ above 1000°; below 1000°C, it shows electronic conduction because of impurities. The conductivity of the sintered system Si₃N₄-Al₂O₃ containing β-sialon, β-Si₃N₄ X phase, and glassy phase changes as the relative quantities of β -sialon and X phase change. The apparent activation energies for the ionic and electronic conductivities are 45 and 20 kcal/mol, respectively.     

Spark Plasma Sintered Silicon Nitride Ceramics with High Thermal Conductivity Using MgSiN2 as Additives

Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si₃N₄ powders as raw materials and MgSiN₂ as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si₃N₄ phase left in the sintered material. α-Si₃N₄ was completely transformed to β-Si₃N₄ after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)⁻¹ was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si₃N₄ ceramics with high thermal conductivity when appropriate additives are used.     

Solvothermal Synthesis of Si3N4 Nanomaterials at a Low Temperature

Silicon nitride nanowires or nanorods have been synthesized from SiCl₄, NaN₃, and metallic Mg at temperatures ranging from 200° to 300°C. X-ray powder diffraction patterns indicated that the as-obtained products were mainly β-Si₃N₄. Scanning electron microscope and high-resolution transmission electronic microscopy showed that the samples mostly consisted of Si₃N₄ nanowires or nanorods. As metallic iron powder was used, α-Si₃N₄ was mainly formed at 250°C.     

Microstructure and Short-Term Oxidation of Hot-Pressed Si3N4/ZrO2(+Y2O3) Ceramics

Composite ceramic materials based on Si₃N₄ and ZrO₂ stabilized by 3 mol% Y₂O₃ have been formed using aluminum isopropoxide as a precursor for the Al₂O₃ sintering aid. Densification was carred out by hot-pressing at temperatures in the range 1650° to 1800°C, and the resulting micro-structures were related to mechanical properties as well as to oxidation behavior at 1200°C. Densification at the higher temperatures resulted in a fibrous morphology of the Si₃N₄ matrix with consequent high room-temperature toughness and strength. Decomposition of the ZrO₂ grains below the oxidized surface during oxidation introduced radial stresses in the subscalar region, and from the oxidation experiments it is suggested that the ZrO₂ incorporated some N during densification.     

Characteristics of ZrO2-Dispersed Si3N4 without Additives Fabricated by Hot Isostatic Pressing

Dense, ZrO₂-dispersed Si₃N₄ composites without additives were fabricated at 180 MPa and ∼1850° to 1900°C for l h by hot isostatic pressing using a glass-encapsulation method; the densities reached >96% of theoretical. The dispersion of 20 wt% of 2.5YZrO₂ (2.5 mol% Y₂O₃) in Si₃N₄ was advantageous to increase the room-temperature fracture toughness (∼7.5 MPa˙m^1/2) without degradation of hardness (∼15 GPa) because of the high retention of tetragonal ZrO₂. The dependence of fracture toughness of Si₃N₄–2.5YZrO₂ on ZrO₂ content can be related to the formation of zirconium oxynitride because of the reaction between ZrO₂ and Si₃N₄ matrix in hot isostatic pressing.     

Phase Equilibria in the System Si3N4-SiO2-BeO-Be3N2

The 1780°C isothermal section of the reciprocal quasiternary system Si₃N₄-SiO₂-BeO-Be₃N₂ was investigated by the X-ray analysis of hot-pressed samples. The equilibrium relations shown involve previously known compounds and 8 newly found compounds: Be₆Si³N₈, Be₁₁Si₅N₁₄, Be₅Si²N₆, Be₉Si₃N₁₀, Be₈SiO₄N₄, Be₆O₃N₂, Be₈O₅N₂, and Be₉O₆N₂. Large solid solubility occurs in β-Si₃N₄, BeSiN₂, Be₉Si₃N₁₀, Be₄SiN₄, and β-Be₃N₂. Solid solubility in β-Si₃N₄ extends toward Be₂SiO₄ and decreases with increasing temperature from 19 mol% at 1770°C to 11.5 mol% Be₂SiO₄ at 1880°C. A 4-phase isotherm, liquid +β-Si₃N₄ ( ss )Si₂ON₂+ BeO, exists at 1770°C.     

Kinetics of β-Si3N4 Grain Growth in Si3N4 Ceramics Sintered under High Nitrogen Pressure

The kinetics of anisotropic β-Si₃N₄ grain growth in silicon nitride ceramics were studied. Specimens were sintered at temperatures ranging from 1600° to 1900°C under 10 atm of nitrogen pressure for various lengths of time. The results demonstrate that the grain growth behavior of β-Si₃N₄ grains follows the empirical growth law Dⁿ– D₀ⁿ = kt , with the exponents equaling 3 and 5 for length [001] and width [210] directions, respectively. Activation energies for grain growth were 686 kJ/mol for length and 772 kJ/mol for width. These differences in growth rate constants and exponents for length and width directions are responsible for the anisotropy of β-Si₃N₄ growth during isothermal grain growth. The resultant aspect ratio of these elongated grains increases with sintering temperature and time.     

Sintering Silicon Nitride Ceramics in Air

Silicon nitride (Si₃N₄) ceramics, prepared with Y₂O₃ and Al₂O₃ sintering additives, have been densified in air at temperatures of up to 1750°C using a conventional MoSi₂ element furnace. At the highest sintering temperatures, densities in excess of 98% of theoretical have been achieved for materials prepared with a combined sintering addition of 12 wt% Y₂O₃ and 3 wt% Al₂O₃. Densification is accompanied by a small weight gain (typically <1–2 wt%), because of limited passive oxidation of the sample. Complete α- to β-Si₃N₄ transformation can be achieved at temperatures above 1650°C, although a low volume fraction of Si₂N₂O is also observed to form below 1750°C. Partial crystallization of the residual grain-boundary glassy phase was also apparent, with β-Y₂Si₂O₇ being noted in the majority of samples. The microstructures of the sintered materials exhibited typical β-Si₃N₄ elongated grain morphologies, indicating potential for low-cost processing of in situ toughened Si₃N₄-based ceramics.     

Microstructure and Mechanical Properties of the in situβ-Si3N4/α'-SiAlON Composite

The in situ β-Si₃N₄/α'-SiAlON composite was studied along the Si₃N₄–Y₂O₃: 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si₃N₄/α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si₃N₄ during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si₃N₄ fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m^1/2. α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions.     

Nucleation and Growth of β'-SiAlON

Elongated β'-SiAlON grains grown from several finegrained Y_m/3Si_12(m+n)Al_m+nO_nN_16–r compositions with α-Si₃N₄, AlN, Al₂O₃, and Y₂O₃ starting materials have been examined. These grains have large aspect ratios and are oriented along the [0001] axis. TEM structural and chemical analysis suggests that they are nucleated from various seed crystals, which can be α-Si₃N₄, β-Si₃N₄, or other β'-SiAlON. The β'-SiAlON seed and the initial precipitation on β-Si₃N₄ show a higher content of Al and O, indicating that a large transient supersaturation of Al and O in the liquid is instrumental for β'-SiAlON formation, whereas subsequent growth proceeds under a much lower driving force. The misfit between phases is accommodated by interfacial dislocations ( c -type and a -type). Fully grown β'-SiAlON grains usually contain several variants independently nucleated from the same seed. In particular, the two alternative α/β phase-matching possibilities result in two [0001] growth habits separated by a twin boundary.     

Subsolidus Phase Equilibria and Ordering in the System ZrO2-Y2O3

The subsolidus phase relations in the entire system ZrO₂-Y₂O₃ were established using DTA, expansion measurements, and room- and high-temperature X-ray diffraction. Three eutectoid reactions were found in the system: ( a ) tetragonal zirconia solid solution→monoclinic zirconia solid solution+cubic zirconia solid solution at 4.5 mol% Y₂O₃ and ∼490°C, ( b ) cubic zirconia solid solutiow→δ-phase Y₄Zr₃O₁₂+hexagonalphase Y₆ZrO₁₁ at 45 mol% Y₂O₃ and ∼1325°±25°C, and ( c ) yttria C -type solid solution→wcubic zirconia solid solution+ hexagonal phase Y₆ZrO₁₁ at ∼72 mol% Y₂O₃ and 1650°±50°C. Two ordered phases were also found in the system, one at 40 mol% Y₂O₃ with ideal formula Y₄Zr₃O₁₂, and another, a new hexagonal phase, at 75 mol% Y₂O₃ with formula Y₆ZrO₁₁. They decompose at 1375° and >1750°C into cubic zirconia solid solution and yttria C -type solid solution, respectively. The extent of the cubic zirconia and yttria C -type solid solution fields was also redetermined. By incorporating the known tetragonal-cubic zirconia transition temperature and the liquidus temperatures in the system, a new tentative phase diagram is given for the system ZrO₂-Y₂O₃.     

Effects of Trace O2 Levels on the Nitriding Kinetics of High-Purity Silicon Powders

The effects of trace O₂ levels on the nitridation of compacts made from silane-derived Si powders were studied in N₂ atmospheres, with oxygen levels of either 5 ppm or 10 ppb (approximately). The nitriding kinetics were studied by thermogravimetric analysis as a function of temperature (1100–1200°C) and heating rate (5°C/min and 100°C/min). Reducing the O₂ level in the nitriding gas enhanced conversion to Si₃N₄ at lower temperatures, reduced the composition variations within the samples, and decreased the α/β ratios. The results suggest that nucleation and rapid growth of Si₃N₄ at relatively low temperatures are possible only when the oxygen partial pressure in the system is below the threshold value for passive oxidation.     

The Role of Cerium Orthosilicate in the Densification of Si3N4

The existence of compounds between Si₃N₄-CeO₂ and Si₃N₄-Ce₂O₃ was investigated for firing temperatures of 1600° to 1700°C. The two new monoclinic compounds found were Ce₂O₃·2Si₃N₄ with lattice parameters a = 16.288, b = 4.848, and c =7.853 Å and β=91.54° and Ce₄Si₂O₇N₂ with lattice parameters a = 10.360, b = 10.865, and c =3.974 Å and β=90.33°. Cerium orthosilicate (Ce 4.67 (SiO₄)₃O) is present during firing as a glassy intermediate phase which promotes sintering and densification and then reacts with silicon nitride to form cerium silicon oxynitrde (CeSiO₂N).     

X-ray Diffraction Analysis of the Pyrolytic Conversion of Perhydropolysilazane into Silicon Nitride

A detailed investigation using X-ray diffraction and other supportive techniques was performed on a preceramic polysilazane to study its pyrolytic conversion to silicon nitride (Si₃N₄). Analytical techniques were developed to determine the volumetric degree of crystallinity with respect to pyrolysis temperature. Quantitative data for crystallite size, phase composition, and degree of crystallinity versus pyrolysis temperature and atmosphere (nitrogen and ammonia) are presented. Pyrolytic products produced under nitrogen and ammonia atmospheres consist of microcrystals of silicon, α-Si₃N₄, and β-Si₃N₄. Under both atmospheres, a majority of the char is crystalline at ≅1270°C, and the entire char is crystallized at 1400°C. Pyrolysis under an ammonia atmosphere produces nearly stoichiometric Si₃N₄, while pyrolysis under nitrogen produces silicon-rich material.