A novel high performance insulated gate bipolar transistor

For the first time, a new concept of LDE-IGBT (local drift-region enhanced IGBT) is proposed and verified by two-dimensional (2D) device-circuit mixed simulations. The structure of the proposed device is almost identical to that of the conventional IGBT, except for an additional n⁺ plugged region under the gate contact. The proposed device exhibits larger maximum operating current, meaning higher current capability, which is expected for high-power operation. The simulation results indicate the LDE-IGBT can obtain a low on-state voltage drop with negligible increase of turn-off time due to lower sensitivity of turn-off time to the novel structure. Therefore, the trade-off relation between on-state voltage and turn-off time is improved and decoupled efficiently. Finally, the effects of three novel structure parameters on the on-state voltage are demonstrated in detail.     

A thermal model for insulated gate bipolar transistor module

A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/. The accuracy of the RC model is verified by comparing its predictions with those resulting from the three-dimensional finite element method simulation. The parameter extraction algorithm is easy to adapt to other types of power modules in an industrial application environment.     

Lateral insulated gate p-i-n transistor (LIGPT)-a new MOS gatelateral power device

A new insulated gate power device suitable for thin silicon-on-insulator (SOI) application is described and verified through two-dimensional numerical simulation. The lateral insulated gate p-i-n transistor (LIGPT) has a much superior current carrying capability than that of the lateral insulated gate bipolar transistor (LIGBT) because it conducts like a p-i-n diode. Because a new turn-off mechanism is employed, the LIGPT also demonstrates a very large gate turn-off capability. These two major advantages; coupled with other advantages such as latch-up free, make the LIGPT a very promising device for use in power integrated circuits on SOI     

High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module

In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temperature of insulated gate bipolar transistor (IGBT) devices of a three-phase inverter power module is presented. The temperature-dependent power loss characteristics of IGBT and diode devices are measured and stored in lookup tables, which replace the conventional complicated physics-based compact models. An inverter is modelled as a voltage controlled voltage source, which allows the inverter-based power train simulation to be carried out in the continuous time domain with a large simulation time-step (1 ms). Using the simulated sinusoidal voltage and current components of the inverter output, the given pulse width modulation mode, the conduction time (duty ratio) and the current of the devices are extracted. Based on the lookup tables, on-times and conduction currents of devices, the average power loss over each simulation time-step is calculated, which is then fed into the inverter thermal model to predict the devices' temperatures. The advantage of the proposed model is that an accurate ET simulation of inverter for long real-time (many minutes) operation can be carried out within an acceptable computational time using a standard modern personal computer. Both simulation and experimental validation have been carried out, and an excellent agreement has been achieved between the simulation and experimental data.     

Application of insulated gate bipolar transistor to zero-currentswitching converters

The problems associated with insulated-gate bipolar transistor (IGBT) devices in PWM converters, such as turn-off current tailing and turn-off latching, are largely avoided in zero-current switching resonant converters. Phenomena induced by dv/dt, such as the power losses and latching, are identified as the predominant problems in using IGBT devices for very-high-frequency resonant operations. The discussion and the verification of the results presented are focused on buck-type converters in the zero-current switching family     

一种新N型射极势垒绝缘栅双极晶体管

本文提出了一种新N型射极势垒绝缘栅双极晶体管。该器件用N型轻掺杂区代替传统的P+区形成空穴势垒,以阻止寄生PNP晶体管空穴分流,从而增强电导调制效应。仿真验证结果显示,该器件对比传统沟槽IGBT,其电流密度和关断损耗分别增加和降低了49%和25%,同时具有相似的击穿电压、关断时间和雪崩能量。此外,该器件具有无限大的跨导,有利于开通和关断。因此,该器件可应用于高压大功率电力电子系统。     

A multi-attribute classification fusion system for insulated gate bipolar transistor diagnostics

Effective health diagnosis provides benefits such as improved safety, improved reliability, and reduced costs for the operation and maintenance of complex engineered systems. This paper presents a multi-attribute classification fusion system which leverages the strengths provided by multiple membership classifiers to form a robust classification model for insulated gate bipolar transistor (IGBT) health diagnostics. The developed diagnostic system employs a k-fold cross-validation model for the evaluation of membership classifiers, and develops a multi-attribute classification fusion approach based on a weighted majority voting with dominance scheme. An experimental study of IGBT degradation was first carried out for the identification of failure precursor parameters, and classification techniques (e.g., supervised learning, unsupervised learning, and statistical inference) were then employed as the member algorithms for the development of a robust IGBT classification fusion system. In this study, the developed classification fusion model based on multiple member classification algorithms outperformed each stand-alone method for IGBT health diagnostics by providing better diagnostic accuracy and robustness. The developed multi-attribute classification fusion system provides an effective tool for the continuous monitoring of IGBT health conditions and enables the development of IGBT failure prognostics systems.     

A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact

This letter proposes a high-conductivity insulated gate bipolar transistor (HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT (FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.     

A novel trench clustered insulated gate bipolar transistor (TCIGBT)

A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well. The TCIGBT provides a unique "self-clamping" feature to protect the trenches from high electric fields. The simulation results based on 1.2 kV nonpunchthrough technology indicate an improvement of 25% in on state and 28% in the turn-off losses in comparison to the state-of-the-art trench IGBT. The saturation current levels of the TCIGBT, which can be designed independent of the forward drop, are also lower.     

SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering

A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n⁻ drift region.     

A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor

A new fault current-sensing scheme employing the floating p-well for fast protection of the insulated gate bipolar transistor (IGBT) from the short-circuit faults is proposed and verified by employing 2D mixed mode simulation, based on the previous experimental results. The proposed floating p-well current-sensing scheme detects not the normal operating current but the fault current of the main IGBT by using the diode connected MOSFET and a resistor, when the short-circuit fault occurs. The diode-connected MOSFET eliminates the degradation of the forward voltage drop, because the floating p-well current does not flow under the normal operating condition due to the threshold voltage of the diode connected MOSFET. The proposed current sensor increases the protection speed without any additional delay time by the external blanking filter.     

A novel multi-cell lateral insulated gate bipolar transistor in the DELDI technology

In this paper, a planar, multi-cell Lateral Insulated Gate Bipolar Transistor (MCLIGBT) in the Double Epitaxial Layer Dielectric Isolation (DELDI) technology is proposed. This novel device exhibits a quasi-vertical mode of operation to achieve a localized conductivity modulation in the sandwich region between the adjacent cathode cells. Detailed numerical analysis shows that the Kirk effect plays an important role in achieving such a localized conductivity modulation and a significantly enhanced on-state performance is achievable without affecting its switching and blocking capability. Furthermore, this device does not require additional fabrication steps to an existing high voltage CMOS process and, therefore, is highly cost and area efficient.     

An insulated gate bipolar transistor employing the plugged n anode

A vertical Insulated Gate Bipolar Transistor, entitled CB-IGBT(Carrier-inducing Barrier-controlled IGBT) has been proposed and verified by a two-dimensional numerical simulation. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the anode structure in which the p-barrier region and n⁺ anode region are employed. In the CB-IGBT, the potential barrier height at the junction between the p-barrier region and n-drift region is controlled by the amount of carriers, so that the trade-off relation between the on-state voltage drop and the switching speed is decoupled efficiently. The switching speed of CB-IGBT is so much enhanced with a negligible increase of the on-state voltage drop, since electrons stored in the n-drift region can be extracted rapidly into the n⁺ anode via p-barrier region during turn-off process.     

一种积累型沟道的半超结结构绝缘栅双极型晶体管

A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage （BV）, a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area （SCSOA） and reduces the energy loss during the turn-off process.     

A new high-performance lateral insulated gate bipolar transistorformed on Quasi-SOI

In the proposed LIGBT/Quasi-SOI, the buried oxide layer of the Quasi-SOI is partially removed at the bottom of the channel region and this channel region is directly connected to the low-resistivity p-type substrate. This structure significantly reduces the base resistance of the parasitic npn-bipolar transistor and significantly increases its latch up current. Simulation of the electrical characteristics of the proposed LIGBT/Quasi-SOI showed that, at a substrate resistivity of 20 mΩ·cm, latch up free operation can be obtained     

An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.     

具有反并联MCT的新型RC-IGBT

Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μm with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J = 150 A/cm2.     

The MGBT: a new MOS-gated power bipolar transistor

A new device called the MGBT is described in which the upper regions of the device structure are conductivity-modulated by a positive feedback mechanism to give a lower on-state voltage drop compared to a power DMOSFET while having fast switching and fully gate-controlled characteristics. In the MGBT, a P⁺ injector coupled to the drain potential by a vertical driver DMOSFET in an emitter-switched configuration is used to inject holes which is then diverted to the entire surface region of the device by a novel cell design. 750 V MGBT devices fabricated along with DMOSFET devices on the same wafer showed 33% improvement in current density at room temperature and 46% improvement at 75°C at a forward drop of 3.5 V. The turn-off time of the MGBT was 80 ns equal to that of the DMOSFET     

A new MOS-gate bipolar transistor for power switches

A new monolithic integrated power device, the MOS-gate transistor (MGT), which consists of a bipolar transistor for an output stage and two MOSFET's for a driver stage, has been investigated. The purpose of the study was to obtain a power switch having characteristics of an easy drive, a short turn-off time, and a high current density. The developed device structure featured the integration of three elements into a small cell from a large number of which the MGT chip was constructed. This device had no parasitic thyristor, making it free from the latchup phenomenon. Unit MGT devices with a blocking voltage of 400-500 V were fabricated. A high current density of 90 A/cm²at a collector-emitter voltage of 2 V and a short turn-off time of less than 1 µs were obtained. The MGT devices, which contained 36 cells, were fabricated with chip sizes of 5 × 5 mm. They exhibited a blocking voltage of 500 V, on-state voltage of 2.3 V at a current of 10 A, and turn-off time of 0.5 µs at 150°C.     

A new three-terminal switching device

A new switching device has been conceived and reduced to practice. This device is a once-programmable three-terminal fuse (TTF) with an on-resistance of a good metallic conductor and an off-resistance which is essentially infinite. In the new structure the fusible circuit path is fully isolated from a control electrode both before and after programming. We discuss the basic concept of the TTF and highlight some of its possible applications