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Carbon nitride films were deposited by a twinned microwave electron cyclotron resonance (ECR) plasma source enhanced unbalanced magnetron sputtering system. The results indicate that the structure of the films is sensitive to the nitrogen content. The increase in the nitrogen flow ratio leads to an increase in the sp3 content and an improvement of the tribological properties. 相似文献
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金属铀的化学性质十分活泼,极易发生氧化腐蚀。为改善基体的抗腐蚀性能,采用非平衡磁控溅射离子镀技术在金属铀表面制备CrNx薄膜。采用X射线衍射和X射线光电子能谱研究薄膜表面的物相结构和元素成分分布,采用极化曲线研究薄膜的抗腐蚀性能。结果表明,CrNx薄膜具有较好的致密性和抗腐蚀性能。当氮分压较小时,生成的薄膜为Cr+CrN+Cr2N混合相。在金属铀表面制备1层CrNx薄膜后,其腐蚀电位增大约465 mV,腐蚀电流密度明显降低,有效改善了贫铀表面的抗腐蚀性能。 相似文献
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Metallic copper(Cu) films were deposited on a Si (100) substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy (SEM), atomic force microscope (AFM) and X-ray diffraction (XRD). The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films. 相似文献
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研究了磁控溅射工艺参数对Au膜生长速率、表面粗糙度和微观结构的影响。结果表明:当溅射功率低于200W时,溅射功率对薄膜表面粗糙度、微观结构的影响不明显。标定了溅射功率为20W条件下的Au膜生长速率,观察了Au的生长过程,在Si基底沉积的Au为岛状(Volver-Weber)生长模式,Au膜厚度为8nm时,薄膜开始连续。晶粒尺寸与薄膜厚度的关系研究结果表明:在生长初期,晶粒尺寸随厚度线性增大;随后,晶粒尺寸增速变缓,直至停滞;趋于70nm时,新晶粒形成取代晶粒长大。 相似文献
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研究了通过磁控溅射方法制备高纯金属铀膜的可行性。采用X射线衍射(XRD)、俄歇电子能谱(AES)、扫描电镜(SEM)、表面轮廓仪分析了沉积在单晶硅或金基材上铀薄膜的微观结构、成分、界面结构及厚度、表面形貌和表面粗糙度。分析结果表明:磁控溅射制备的铀薄膜为纯金属态,氧含量和其它杂质含量均低于俄歇电子能谱仪的探测下限;溅射沉积的铀镀层与铝镀层之间存在界面作用,两者相互扩散并形成合金相,扩散层厚度约为10nm。铀薄膜厚度可达微米级,表面光洁,均方根(RMS)粗糙度优于15nm。 相似文献
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采用直流磁控溅射方法,通过分别改变衬底温度及He分压来制备不同氦含量的钛膜。利用PBS、XRD、TEM及AFM分别对钛膜中的He含量、平均晶粒尺寸及膜的表面形貌进行分析。结果表明:在不同温度范围内,温度变化对所制备钛膜中He含量的影响明显不同;He含量与晶粒尺寸直接相关,氦原子进入钛膜后,抑制了晶粒的长大;随着钛膜中He与Ti的原子个数比由1.0%增加到11.9%,TEM测得的平均晶粒尺寸由约35nm减小到约4nm;选择合适的He分压,能够制备出He含量较高的氦钛膜。 相似文献
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《等离子体科学和技术》2015,17(7):583-588
The effect of the frequency and power of the bias applied to the substrate on plasma properties in 60 MHz(VHF) magnetron sputtering was investigated.The plasma properties include the ion velocity distribution function(IVDF),electron energy probability function(EEPF),electron density n_e,ion flux Γ_i,and effective electron temperature T_(eff).These parameters were measured by a retarding field energy analyzer and a Langmuir probe in the 60 MHz magnetron sputtering,assisted with 13.56 MHz or 27.12 MHz substrate bias.The 13.56 MHz substrate bias led to broadening and multi-peaks IVDFs,Maxwellian EEPFs,as well as high electron density,ion flux,and low electron temperature.The 27.12 MHz substrate bias led to a further increase of electron density and ion flux,but made the IVDFs narrow.Therefore,the frequency of the substrate bias was a possible way to control the plasma properties in VHF magnetron sputtering. 相似文献
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退火对直流磁控溅射铬膜附着性的影响 总被引:1,自引:0,他引:1
为了利用铬膜改善锆的抗腐蚀性,研究了退火对Zr-2基体上制备的直流磁控溅射铬膜附着性的影响,使用扫描电镜(SEM)观察了界面形貌及锆,铬的界面的分布,用X-射线衍射仪(XRD)分析了膜层的组成,用划痕法测定了铬膜的附着,结果表明,锆/铬界面结合良好,边界可见;与现有文献比较,获得的铬膜附着性好――均超过20N;溅射后退火使Zr-Cr界面更像扩散界面,但X-射线衍射结果未发现有界面反应产物;退火提高铬膜与Zr-2基体的附着性约50%,扩散际着附着性增加的主要因素。 相似文献
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High-power pulsed magnetron sputtering (HPPMS or HiPIMS) is an emerging coating technology that produces very dense plasmas and highly ionized sputtering atoms.... 相似文献
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CrN films have been synthesized on Si(100) wafer by inductively coupled plasma (ICP)-enhanced radio frequency (RF) magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power. 相似文献
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Copper nitride thin films were deposited on glass substrates by reactive direct current (DC) magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas (N2) partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper (Cu) nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism. 相似文献
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ZrN fihns were deposited on Si(111) and M2 steel by inductively coupled plasma (ICP)-enhanced RF magnetron sputtering. The effect of ICP power on the microstructure, mechanical properties and corrosion resistance of ZrN films was investigated. When the ICP power is below 300 W, the ZrN films show a columnar structure. With the increase of ICP power, the texture coefficient (To) of the (111) plane, the nanohardness and elastic modulus of the films increase and reach the maximum at a power of 300 W. As the ICP Power exceeds 300 W, the films exhibit a ZrN and ZrNx mixed crystal structure without columnar grain while the nanohardness and elastic modulus of the films decrease. All the ZrN coated samples show a higher corrosion resistance than that of the bare M2 steel substrate in 3.5% NaCl electrolyte. The nanohardness and elastic modulus mostly depend on the crystalline structure and Tc of ZrN(111). 相似文献
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Plasma properties in a planar DC magnetron system are simulated by a non-self- consistent particle method in two dimensions. Through tracing the trajectories of the energetic electrons in the specified electric field and the magnetic field, and treating the collision process by Monte Carlo method, the spatial profile of ionization events can be obtained conveniently. Assuming that the ions speed up from the ionization points and bombard the target with the energy at these points, and according to the Yamamura/Tawara method, the target erosion can be predicted. The magnetic field is calculated by the finite element method, and the electric field is estimated according to the self-consistent simulation and measured results. The influence of the time step size on the target erosion profile is analysed first to find a proper step size. Then the influence of electric field estimated on the erosion profile is discussed. The erosion profile may become narrower if the sheath thickness is increased. Finally, considering the dynamic erosion process, the erosion profile may get wider over time for the magnetron with shunt bar. 相似文献