Structure and Tribology Property of Carbon Nitride Films Deposited by MW-ECR Plasma Enhanced Unbalanced Magnetron Sputtering

Carbon nitride films were deposited by a twinned microwave electron cyclotron resonance （ECR） plasma source enhanced unbalanced magnetron sputtering system. The results indicate that the structure of the films is sensitive to the nitrogen content. The increase in the nitrogen flow ratio leads to an increase in the sp3 content and an improvement of the tribological properties.     

金属铀表面非平衡磁控溅射CrNx薄膜的XPS分析与腐蚀性能

金属铀的化学性质十分活泼,极易发生氧化腐蚀。为改善基体的抗腐蚀性能,采用非平衡磁控溅射离子镀技术在金属铀表面制备CrN_x薄膜。采用X射线衍射和X射线光电子能谱研究薄膜表面的物相结构和元素成分分布,采用极化曲线研究薄膜的抗腐蚀性能。结果表明,CrN_x薄膜具有较好的致密性和抗腐蚀性能。当氮分压较小时,生成的薄膜为Cr+CrN+Cr₂N混合相。在金属铀表面制备1层CrN_x薄膜后,其腐蚀电位增大约465 mV,腐蚀电流密度明显降低,有效改善了贫铀表面的抗腐蚀性能。     

Cu Films Deposited by Unbalanced Magnetron Sputtering Enhanced by ICP and External Magnetic Field Confinement

Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy （SEM）, atomic force microscope （AFM） and X-ray diffraction （XRD）. The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.     

溅射功率对磁控溅射制备Bi薄膜结构和性能的影响

采用直流磁控溅射方法在不同功率下制备了铋(Bi)薄膜,对薄膜的沉积速率、表面形貌、生长模式、晶体结构进行了研究,并对其晶粒尺寸和应力的变化规律进行了分析。扫描电镜(SEM)图像显示：薄膜均为柱状生长,平均晶粒尺寸随溅射功率先增大后减小,薄膜的致密度随着功率的增加而降低,在60W时又变得较致密。X射线衍射(XRD)结果表明：Bi薄膜均为多晶斜六方结构,薄膜内应力随功率的增加由张应力变为压应力。     

磁控溅射制备纳米厚度连续金膜

研究了磁控溅射工艺参数对Au膜生长速率、表面粗糙度和微观结构的影响。结果表明:当溅射功率低于200W时,溅射功率对薄膜表面粗糙度、微观结构的影响不明显。标定了溅射功率为20W条件下的Au膜生长速率,观察了Au的生长过程,在Si基底沉积的Au为岛状(Volver-Weber)生长模式,Au膜厚度为8nm时,薄膜开始连续。晶粒尺寸与薄膜厚度的关系研究结果表明:在生长初期,晶粒尺寸随厚度线性增大;随后,晶粒尺寸增速变缓,直至停滞;趋于70nm时,新晶粒形成取代晶粒长大。     

磁控溅射制备金属铀膜

研究了通过磁控溅射方法制备高纯金属铀膜的可行性。采用X射线衍射（XRD）、俄歇电子能谱（AES）、扫描电镜（SEM）、表面轮廓仪分析了沉积在单晶硅或金基材上铀薄膜的微观结构、成分、界面结构及厚度、表面形貌和表面粗糙度。分析结果表明：磁控溅射制备的铀薄膜为纯金属态,氧含量和其它杂质含量均低于俄歇电子能谱仪的探测下限;溅射沉积的铀镀层与铝镀层之间存在界面作用,两者相互扩散并形成合金相,扩散层厚度约为10nm。铀薄膜厚度可达微米级,表面光洁,均方根（RMS）粗糙度优于15nm。     

直流磁控溅射钛及钛合金薄膜的性能研究

用直流磁控溅射的方法在Si及Mo基片上制取Ti及其Ti合金薄膜。研究了基片温度等镀膜工艺参数对薄膜性能的影响,并用XPS、XRD、SEM分析薄膜的化学组成和结构特征,对薄膜的生长模式进行分析。结果表明,合金的加入降低了晶粒尺寸;升高温度可增大薄膜晶粒尺寸,改善薄膜结合能力;合金膜的成分与靶材基本一致。     

磁控溅射沉积含He纳米晶钛膜制备

采用直流磁控溅射方法，通过分别改变衬底温度及He分压来制备不同氦含量的钛膜。利用PBS、XRD、TEM及AFM分别对钛膜中的He含量、平均晶粒尺寸及膜的表面形貌进行分析。结果表明：在不同温度范围内，温度变化对所制备钛膜中He含量的影响明显不同；He含量与晶粒尺寸直接相关，氦原子进入钛膜后，抑制了晶粒的长大；随着钛膜中He与Ti的原子个数比由1.0%增加到11.9%，TEM测得的平均晶粒尺寸由约35nm减小到约4nm；选择合适的He分压，能够制备出He含量较高的氦钛膜。     

磁控溅射法制备金/钆柱腔工艺研究

采用直流磁控溅射方法制备金/钆(Au/Gd)多层膜,并研究不同制备参数对多层膜结构与性能的影响。溅射压强高于1Pa时,Au膜与Gd膜的沉积速率均随溅射压强的增大而下降;在较低溅射气压下,随着溅射气压的降低,金膜与钆膜的均方根粗糙度有所减小;随着溅射功率的减小,金/钆多层膜的周期性结构变好,界面更为清晰。本工作制备了不同原子比的金/钆膜柱腔,探讨了有关柱腔成型的解决方法。     

合金化对溅射Ti膜材结构和力学性能的影响

研究了直流磁控溅射Ti、TiMo、TiMoY及TiMoYAl薄膜的形貌、结构和力学性能,探讨了合金化对Ti膜的影响。结果表明,合金化使Ti膜由α相结构转变为α+β双相结构,改变了薄膜的择优取向,降低了薄膜表面粗糙度,并改善了薄膜的力学性能。     

Effect of Frequency and Power of Bias Applied to Substrate on Plasma Property of Very-High-Frequency Magnetron Sputtering

The effect of the frequency and power of the bias applied to the substrate on plasma properties in 60 MHz(VHF) magnetron sputtering was investigated.The plasma properties include the ion velocity distribution function(IVDF),electron energy probability function(EEPF),electron density n_e,ion flux Γ_i,and effective electron temperature T_(eff).These parameters were measured by a retarding field energy analyzer and a Langmuir probe in the 60 MHz magnetron sputtering,assisted with 13.56 MHz or 27.12 MHz substrate bias.The 13.56 MHz substrate bias led to broadening and multi-peaks IVDFs,Maxwellian EEPFs,as well as high electron density,ion flux,and low electron temperature.The 27.12 MHz substrate bias led to a further increase of electron density and ion flux,but made the IVDFs narrow.Therefore,the frequency of the substrate bias was a possible way to control the plasma properties in VHF magnetron sputtering.     

磁控溅射制备成分渐变Au/Cu复合涂层的研究

在JGP560型高真空多功能磁控溅射设备上,利用直流磁控溅射法,通过控制共溅射时Au靶和Cu靶的功率变化,在平面基片和微球表面制备了一系列成分渐变的Au/Cu涂层,并用扫描电子显微镜和能量色散X射线荧光光谱仪对涂层的微观结构和成分进行了测试分析。分析结果表明：涂层内部的晶粒生长随Au和Cu含量的变化呈现出3个不同的区域;涂层中Au和Cu含量随涂层厚度的增加呈近线性变化的趋势;涂层内部晶粒之间结合紧密;涂层厚度均匀性良好,表面光洁。     

CSNS四极陶瓷真空盒磁控溅射镀TiN膜研究

介绍了中国散裂中子源（CSNS）快循环同步加速器（RCS）中四极陶瓷真空盒内表面镀TiN膜技术与成膜系统装置。采用磁控溅射法,通过在绝缘体长直管道外表面安装金属屏幕罩来提供同轴电场的方法,解决了镀膜均匀性的问题。镀膜样品Ti、N比在0.9~1.1范围内,膜厚为100nm左右,附着力达到要求,总体满足设计指标,完成了CSNS四极陶瓷真空盒样机的镀膜。     

退火对直流磁控溅射铬膜附着性的影响

为了利用铬膜改善锆的抗腐蚀性，研究了退火对Zr-2基体上制备的直流磁控溅射铬膜附着性的影响，使用扫描电镜（SEM）观察了界面形貌及锆，铬的界面的分布，用X－射线衍射仪（XRD）分析了膜层的组成，用划痕法测定了铬膜的附着，结果表明，锆／铬界面结合良好，边界可见；与现有文献比较，获得的铬膜附着性好――均超过20N；溅射后退火使Zr-Cr界面更像扩散界面，但X－射线衍射结果未发现有界面反应产物；退火提高铬膜与Zr-2基体的附着性约50％，扩散际着附着性增加的主要因素。     

Discharge Properties of High-Power Pulsed Unbalanced Magnetron Sputtering

High-power pulsed magnetron sputtering （HPPMS or HiPIMS） is an emerging coating technology that produces very dense plasmas and highly ionized sputtering atoms....     

Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanced Radio Frequency Magnetron Sputtering

CrN films have been synthesized on Si（100） wafer by inductively coupled plasma （ICP）-enhanced radio frequency （RF） magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.     

Effect of N2-Gas Partial Pressure on the Structure and Properties of Copper Nitride Films by DC Reactive Magnetron Sputtering

Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.     

Microstructure,Hardness and Corrosion Resistance of ZrN Films Prepared by Inductively Coupled Plasma Enhanced RF Magnetron Sputtering

ZrN fihns were deposited on Si（111） and M2 steel by inductively coupled plasma （ICP）-enhanced RF magnetron sputtering. The effect of ICP power on the microstructure, mechanical properties and corrosion resistance of ZrN films was investigated. When the ICP power is below 300 W, the ZrN films show a columnar structure. With the increase of ICP power, the texture coefficient （To） of the （111） plane, the nanohardness and elastic modulus of the films increase and reach the maximum at a power of 300 W. As the ICP Power exceeds 300 W, the films exhibit a ZrN and ZrNx mixed crystal structure without columnar grain while the nanohardness and elastic modulus of the films decrease. All the ZrN coated samples show a higher corrosion resistance than that of the bare M2 steel substrate in 3.5% NaCl electrolyte. The nanohardness and elastic modulus mostly depend on the crystalline structure and Tc of ZrN（111）.     

Simulation to Predict Target Erosion of Planar DC Magnetron

Plasma properties in a planar DC magnetron system are simulated by a non-self- consistent particle method in two dimensions. Through tracing the trajectories of the energetic electrons in the specified electric field and the magnetic field, and treating the collision process by Monte Carlo method, the spatial profile of ionization events can be obtained conveniently. Assuming that the ions speed up from the ionization points and bombard the target with the energy at these points, and according to the Yamamura/Tawara method, the target erosion can be predicted. The magnetic field is calculated by the finite element method, and the electric field is estimated according to the self-consistent simulation and measured results. The influence of the time step size on the target erosion profile is analysed first to find a proper step size. Then the influence of electric field estimated on the erosion profile is discussed. The erosion profile may become narrower if the sheath thickness is increased. Finally, considering the dynamic erosion process, the erosion profile may get wider over time for the magnetron with shunt bar.     

离子溅射对氚钛靶寿命的影响

应用TRIM程序模拟了离子在氚钛靶上的溅射产额。结果显示,O+、N+、C+和D+2等在氚钛靶上的溅射是导致氚钛靶寿命下降的重要因素。为了减小离子溅射对氚钛靶寿命的影响,束流入射角应小于45°。