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V.M. Dubin R. Akolkar C.C. Cheng R. Chebiam A. Fajardo F. Gstrein 《Electrochimica acta》2007,52(8):2891-2897
Various technical issues related to feature scaling and recent electrochemical technologies advances for on-chip copper interconnects at Intel are reviewed. Effects of additives on electroplating, as well as performance of novel Cu direct plating on ruthenium liner are discussed. An electroless cobalt capping layer of Cu lines, which led to increased electromigration resistance, has been characterized. The potential application of carbon nanotubes as future interconnects materials, their properties and controlled placement by using dielectrophoresis are also reviewed. 相似文献
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J. Barbier J. C. Menezo C. Montassier J. Naja G. Del Angel J. M. Dominguez 《Catalysis Letters》1992,14(1):37-43
Raney copper catalysts were modified by addition of ruthenium by means of an oxido-re-duction reaction between copper surface and ruthenium chloride in aqueous solution. Energy dispersive spectroscopy fitted to a STEM unit allowed to conclude that the active sites for the selective conversion of glucitol into 1,4–3,6-dianhydroglucitol are composed of ruthenium and chlorine located on low coordinated copper atoms. 相似文献
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采用以甲醛为还原剂的化学镀铜液,用硝酸银作活化剂,在碳纤维布表面沉积出连续、均匀、有光泽的化学镀铜层。研究了不同前处理工艺对碳纤维布化学镀铜的影响。采用扫描电子显微镜表征了化学镀铜层的表面形貌,并用数字电压表测试了碳纤维布化学镀铜前后的导电性。 相似文献
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电镀铜技术在电子材料中的应用 总被引:3,自引:0,他引:3
电镀铜层具有良好的导电、导热、延展性等优点,因此,电镀铜技术被广泛应用于电子材料制造领域。本文概括了几种常用电镀铜体系的特点,重点介绍了在电子制造中应用较广的酸性硫酸盐电镀铜镀液的组成和各成分作用。简述了电镀铜在铜箔粗化、印制电路制作、电子封装、超大规模集成电路(ULSI)铜互连领域的应用,并对近年来电子工业中应用的几种先进电镀铜技术,包括脉冲电镀铜技术、水平直接电镀铜技术、超声波电镀铜技术、激光电镀铜技术等进行了评述。 相似文献
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研究了EDTA,NaKC4H4O6以及两者复配后,对Al2O3陶瓷表面化学镀铜沉积速率、微观形貌、表面粗糙度和镀液稳定性的影响。结果表明:EDTA为配位剂时,化学镀铜镀速为3.86μm/h,镀层表面粗糙度为0.39μm,镀层铜微粒形成团聚,均匀性较差;NaKC4H4O6为配位剂时,镀速为4.55μm/h,表面粗糙度为0.46μm,镀层表面有直径达2~5μm的杂质微粒;EDTA和NaKC4H4O6复配使用时,镀速为4.17μm/h,表面粗糙度为0.35μm,铜镀层微观组织致密,铜微粒大小分布均匀,排列紧密,表面平滑、洁净。 相似文献
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采用正交试验方法研究了镀液组成对氮化铝(AIN)陶瓷表面化学镀铜镀速和表面粗糙度的影响.经过直观分析和方差分析,评价了各组分对化学镀影响的显著程度,优化了镀液组成.试验结果表明,CuSO_4·5H_2O和Na_2EDTA对镀速有显著影响;KNaC_4H_4O_6、CuSO_4·5H_2O和Na2EDTA对镀后表面粗糙度有显著影响;AIN陶瓷表面化学镀铜液的最优工艺参数为:CuSO_4·5H_2O 24 g/L,Na_2EDTA 30 g/L,KNaC_4H_4O_6 20 g/L和HCHO 15 mol/L.在最优工艺条件下,镀速为7.350 μm/h,镀后表面粗糙度为1.03 μm,所得镀层表面平整,铜晶粒大小均匀. 相似文献
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S. SUGIHARA A. IWASAWA K. ONOSE A. TANAKA H. ARAI T. SHODAI S. OKADA H. OHTSUKA S. TOBISHIMA J. YAMAKI 《Journal of Applied Electrochemistry》1997,27(9):1111-1117
Plating fog is often observed when metallizing a latent pattern by electroless copper plating. Metallic elements in the nuclei of plating fog particles are analysed using electron probe microanalysis (EPMA). Silver and iron are invariably found in the particles. The iron is driven into the board during the liquid honing process and reduces silver ions in the photosensitive material to silver metal which causes plating fog. Plating fog also arises from reduced copper particles or generated hydrogen gas bubbles when they are trapped on the unpatterned region. Mechanical stirring accompanied by substrate oscillation is an effective method of avoiding plating fog. 相似文献
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The catalytic properties of a series of ruthenium-copper catalysts supported on silica were studied. It was found that while the amount of CO adsorbed at 273 K measured with the pulse-flow method is higher on the catalysts with a small concentration of copper than on the pure ruthenium catalyst, the yield of Ru+ secondary ions on fast atom bombardment of the catalyst surface with argon is suppressed by the addition of copper. The activity for CO disproportionate as well as CO hydrogenation were drastically reduced by the presence of copper. It is estimated that an ensemble of between 4 to 6 adjacent ruthenium atoms is required for CO disproportionation and one of between 9 to 13 adjacent ruthenium atoms is required for CO hydrogenation. Comparisons between the properties of the supported catalysts and those of single-crystal model catalysts were made. 相似文献
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The co-deposition behavior of a trace of copper and zinc as an impurity in cyanide baths for silver plating was studied by means of a radioactive tracer. The authors selected 64CuCN and 65Zn(CN)2 as a labelled compound and added it to the cyanide baths for silver plating.Each amount of copper and zinc co-deposited with silver increased with increasing copper and zinc concentration in silver plating baths and temperature. It was found that the co-deposition of copper and zinc depended on cathode potentials and was not diffusion-determining. The co-deposition of copper abruptly increased in the high current density range. In the potential range Cu co-deposition is observed with Cu reversible potential through limiting current of silver deposition, and evolution of hydrogen. At low current density, Cu and Zn co-deposition are saturated at about 6400 Å thickness of electrodeposited silver and occluded in the electrodeposits is not smooth and coarse structure is observed on it. 相似文献
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Galvanostatic nucleation of copper onto pretreated ruthenium is investigated using experimental methods and numerical simulations in the presence of two different suppressor molecules; polyethylene glycol (PEG) and ethylene glycol-propylene glycol-ethylene glycol block copolymer (EPE). The model parameters have been largely determined from electrochemical characterization. Results suggest that a fast adsorption rate of the suppressor results in higher nucleus densities. Simulation results provide insight why EPE is more effective than PEG at increasing nucleus density. In addition, the simulations are used to predict the impact of pulse plating paramaters, showing that both the properties of the additive and the waveform need to be considered to optimize nucleus density enhancement. 相似文献
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