Synthesis and Luminescent Properties of Ce^3＋ , Tb^3＋ Co-Doped ZH4B6O13

Green-photoluminescence material Zn4B6O13: Ce^3 , Tb^3 was first synthesized by spread method of high temperature and solid state reaction, which is cubic crystal system with lattice parameters : a0 =0. 7472 nm, V = 0.4172 nm^3, and structural properties are investigated by XRD. The excitation and emission band of Ce^3 ion singledoped in Zn4B6O13 transfer longer spectra 2.38 ～4.94 kk than in other matrices. Emission band of Ce^3 ion better overlaps with the ^7F6→^5G2,^5D1 ,^5H7 absorption band of Tb^3 . It shows that emission of Tb^3 ion is sensitized by Ce^3 . In Zn4B6O13:Ce^3 , Tb^3 , it is due to the energy transfer mechanism, resonance transfer of electric muhipolax interaction of the dipole-dipole between Ce^3 →Ce^3 and Ce^3 →Tb^3 . The color coordinates of ZB4B6O13: x =0.281, y =0.619. The mean diameter of the particles is 0.23μm.     

Influence of Molten Salt on Luminescent Intensity and Particle Size of Y2O3 ：Eu^3＋ Phosphor

The Y-Eu oxalate precursor was prepared with a homogeneous precipitation method. And the additives, Na2CO3, S, NaCl or their combination, were introduced into the precursor to prepare Y2O3 ：Eu^3＋ red phosphors at 1000 1300 ℃ for 2 h. The effect of molten salts on particle size and luminescent intensity was studied. The experimental results showed that the complex molten salt （Na：CO3 ＋ S ＋ NaCl） was conductive to enhance the luminescent intensity of Y2O3 ：Eu^3＋. The emission intensity of the phosphor prepared with these additives at 1300 ℃ was about 45% higher than that of the one prepared without molten salt, and about 11% higher than that of the corresponding commercial phosphor. Meanwhile, the particle size of Y2O3 ：Eu^3＋ phosphor was controlled effectively with the molten salt.     

Sol-Gel Synthesis and Luminescent Characteristic of Doped Eu^3 ＋ Silicate-Silica Phosphor

Silicagelphosphorsdopedrareearthionshave attractedgreatattentionofmanyresearchersdueto theseadvantages,suchashighersamplehomogeneity,purityandstable,efficientandenvironmentallyfriend lyphotoluminescencematrixmaterials,whichisless toxicleadtonetconversione…     

Preparation and Luminescent Properties of GdMgB5O10 Doped with Ce^3＋ or／and Tb^3＋ by sol-Gel Method

Ce^3 or/and Tb^3 doped GdMgB5O10 phosphors were prepared by sol-gel technique. XRD, SEM and PL (photolumineseent) measurements were used to characterize the phosphor powders. The results of XRD reveal that phase pure GdMgB5O10 powders are formed at 800℃ and conform the good quality of the synthesized materials obtained by such a process. The luminescent properties of GdMgB5O10:Ce^3 and/or Tb^3 are presented. Their luminescent mechanism and host-to-activator energy transfer were discussed.     

Synthesis and Luminescent Properties of Novel Red Long-Lasting Phosphor Ca2Zn4Ti15O36：Pr^3＋

A novel red long-lasting phosphor Ca2Zn4Ti15O36:Pr were synthesized by solid state reaction and by sol-gel method. It is a new type of Pr^3 -doped titanate red long lasting phosphor. It is difficult to make pure Ca2Zn4Ti15O36 crystalline by solid state reaction and it must be sintered at 1200℃ for 96 h.The analysis results of thermogravimetric curve and Xray powder diffraction revealed that Ca2Zn4Ti15O36 canbe formed by sintering precursor at 700℃ for 12 h,     

Preparation and Luminescent Properties of BAM Blue Phosphor forPDP and CCFL

The Bax-0.05MgAl10O16 x :Eu0.05^2 (0.88≤ x≤ 1.02) phosphors with different Ba^2 content and the Ba0.85MgAl10O16.94:Eu0.05^2 phosphors with different fluxes (BaF2, MgF2, AlF3, BaCl2, MgCl2, AlCl3, H3BO3)were prepared by high temperature solid-state reaction method and their luminescence characteristics were studied under 254 nm excitation and vacuum ultraviolet (VUV) excitation. With the increase of the Ba^2 content, there is an increase in the emission intensity, and when x = 0.94, it reaches a maximum. Then, as the Ba^2 content increases, the emission intensity slowly falls. The fluorides have better flux-effects than chlorides and H3BO3. The possible mechanism in the process of particle growth was discussed when fluorides were used as fluxes. The effect of the activator concentration on this system was also investigated. The quenching concentration is 0.13 mol in per mole host.     

Luminescent Properties of SrGa2S4 :Eu and Its Application in Green-LEDs

Phosphor SrGa2S4Eu2 was synthesized with a high temperature solid state reaction.Its absorption spectrum, photoluminescence spectra, and fluorescence lifetime were studied in details.The excitation spectrum extended from UV to visible light region, and matched the emission of GaN chip.(Sr1-xEux)Ga2S4 emits strong green light and the concentration quenching did not occur; while the thermal quenching was evident.The emission peak shifted to long wavelength with increasing Eu2 concentration because of the changing of the crystal field strength.The lifetime of Eu2 ion was in the order of microsecond, which was reasonable for d→f transition.The electroluminescence spectrum of as-fabricated PC-LED at IF=20 mA was measured and most of the blue light of blue-LED chip at 460 nm was absorbed by the phosphor and simultaneously down-converted into an intensive green light at 540 nm.The color coordinate was (0.32, 0.63).SrGa2S4Eu2 was a promising phosphor for GaN-based green LEDs.     

Electronic structure of the SrAl2O4：Eu^2＋ persistent luminescence material

The electronic structure of the strontium aluminate (SrAl₂O₄:Eu²⁺) materials was studied with a combined experimental and theoretical approach. The UV-VUV synchrotron radiation was applied in the experimental study while the electronic structure of the non-optimized and optimized crystal structure were investigated theoretically by using the density functional theory. The structure of the valence and conduction bands as well as the band gap energy of the material together with the position of the Eu²⁺ 4f^{7 8}S_7/2 ground state were calculated. The calculated band gap energy (6.4 eV) agreed well with the experimental value of 6.6 eV. The valence band consisted mainly of oxygen states whereas the bottom of the conduction band of strontium states. In agreement with the experimental results, the calculated 4f^{7 8}S_7/2 ground state of Eu²⁺ lies in the energy gap of the host. The position of the 4f⁷ ground state depended on the Coulomb repulsion strength. The position of the 4f⁷ ground state with respect to the valence and conduction bands was discussed using theoretical and experimental evidence available.     

Luminescence Properties of Green-Emitting Phosphor （Ba1- x, Srx ） 2 SiO4 ： EU^2＋ for White LEDS

The （Ba1- x, Srx ） 2 SiO4 ： EU^2＋ green-emitting phosphors were synthesized by conventional solid-state reaction in a CO-reductive atmosphere, and their luminescent properties were investigated. The XRD data show that the Ba/Sr ratio not only affects the lattice parameters, but also influences the emission peak. The excitation spectra indicate that this phosphor can be effectively excited by UV light from 370 to 470 nm. The emission band is due to the 4f^65d^1→4f^7 transition of the Eu^2＋ ion. With an increase in x, the emission band shifts to longer wavelength and the reason was discussed. The emission spectra exhibit a satisfactory green performance under different excitation wavelength（380,398,412,420,460 nm）. （Ba1- x, Srx ） 2 SiO4 ： EU^2＋ is a promising phosphor for green white-lighting-emission diode by ultraviolet chip.     

Luminescent properties of amorphous phosphor 1.4YeO3·2.5Al2O3·0.1Tb2O3 prepared by sol-gel method

Amorphous phosphor 1.4YeO3·2.5Al2O3·0.1Tb2O3 （the same composition as Y2.8Tb0.2Al5O12） was prepared via a sol-gel method at relatively low temperature （i.e., below 650℃）, which is much lower than that for the preparation of polycrystalline Y3Al5O12：Tb^3＋ （above 1400℃）. The amorphous phosphor prepared in the optimized conditions showed a bright green-yellowish luminescence, the intensity of which was comparable with that of polycrystalline sample and the emissions of which were assigned to 5D4 → 7Fj transitions of Tb^3＋. Besides the emissions of Tb^3＋, the amorphous samples prepared at temperatures below 500 ℃ presented a weak blue emission band around 420 nm.     

Synchrotron radiation investigations of the Sr2MgSi2OT：Eu^2＋,R^3＋ persistent luminescence materials

The electronic and defect energy level structure of polycrystalline Sr₂MgSi₂O₇:Eu²⁺,R³⁺ persistent luminescence materials were studied with thermoluminescence and different synchrotron radiation spectroscopies (UV-VUV emission and excitation, X-ray absorption near-edge spectroscopy (XANES) and extended X-ray absorption fine structure (EXAFS)). Special attention was paid on the effect of the R³⁺ co-dopants on the persistent luminescence properties of the materials. Theoretical calculations using the density functional theory (DFT) were carried out simultaneously with the experimental work. The experimental band gap energy (E_g) value of ca. 7.1 eV agreed very well with the DFT value of 6.7 eV. The variation of the E_g value was attempted to relate with the trap structure as well as with the different properties of the R³⁺ co-dopants. The trap level energy distribution depended strongly on the R³⁺ co-dopant except for the shallowest trap energy above the room temperature remaining practically the same, however. The different processes in the mechanism of persistent luminescence from Sr₂MgSi₂O₇:Eu²⁺,R³⁺ were assembled and their contributions discussed.     

Thermoluminescence Characteristics of SrB6O10 ： Tb

SrB6010：Tb phosphor was synthesized by high-temperature solid state reaction. The influences of Ce or Li as a co-dopant, Tb concentration and irradiation dose exposure on TL of SrB6010 ： Tb were investigated. Results show that Ce or Li as a co-dopant can not improve the sensitivity of SrB6010：Tb phosphor. TL response depends on Tb concentration and 0.02 is the optimum in the concentration range from 0.01 to 0.10. Using the optimum Tb concentration, we calculated the kinetic parameters of SrB6010：Tb employing the peak shape method, and suggested the phosphor obeying the second order kinetics. TL emission intensity is linearly dependent on the irradiation dose within the dose range of 50 - 200 Gy. The characteristic Tb^3＋ ion emission was observed in TL emission spectrum.     

Luminescent properties of SrSi2N2O2:Ce3+,Tb3+-a potential phosphor for white light emitting diodes

Ce3+ and Tb3+ co-doped SrSi2N2O2 phosphors were prepared by solid-state reaction. The X-ray diffraction pattern exhibited that the phosphor consisted mainly of oxygen-rich SrSi2N2O2. The optical properties of SrSi2N2O2:Ce3+, SrSi2N2O2:Tb3+ and SrSi2N2O2:Ce3+,Tb3+ were studied, respectively. The emission intensity of Tb3+ at 541 nm was remarkably enhanced by Ce3+ in SrSi2N2O2:Ce3+,Tb3+ phosphor, which was attributed to the energy transfer from Ce3+ to Tb3+. The chromaticity coordinates of phosphors were investigated as a function of Tb3+ concentration. When the Ce3+ and Tb3+ concentrations were 0.02 and 0.18 mol per formula unit, respectively, the chromaticity coordinate was (0.257, 0.337) in the CIE 1931 chromaticity diagram. SrSi2N2O2Ce3+,Tb3+ phosphors could be used for white light emitting diodes.     

Luminescent Properties of Green Phosphor Ca8Mg（SiO4 ）4 Cl2：EU^2＋ , DY^3＋ for LED Applications

The new phosphor calcium magnesium chlorosilicate, codoped with Eu^2＋ and Dy^3＋, was synthesized with the help of the high temperature solid state reaction in reducing atmosphere. The excitation and emission spectra were very similar to that of Ca8Mg（SiO4）4Cl2 ：Eu^2＋, and the Dy^3＋ concentration influenced the emission intensity of this phosphor. The intensity of Eu^2＋ and Dy^3＋ codoped CMSC was stronger than that of Eu^2＋ singly doped CMSC. The emission spectrum of the Dy^3＋ ion overlapped the absorption band of the Eu^2＋ ion, indicating that an energy transfer from Dy^3＋ to Eu^2＋ took place in CMSC：Eu^2＋, Dy^3＋ phosphor. The mechanism of the energy transfer from Dy^3＋ tO Eu^2＋, in this phosphor, might be resonant energy transfer.     

Luminescent Properties of BaMgAl10O17： Eu2＋ Phosphors Coated with Y2SiO5

BaMgAl10O17： Eu^2＋ phosphors was prepared by the solid-reaction method. Y2SiO5 was coated uniformly on the surface of phosphor by the surface-coated method, and the luminescent and deterioration properties were discussed. The XRD and SEM results show that Y2SiO5 film is produced on the surface of BAM phosphor. The emission spectrum analysis shows that the peak of the phosphor does not change after coating. The two phosphors were applied to lamps and the deterioration was tested at different ignited time. The keep ratio of luminous flux of the phosphor coated with Y2SiO5 is higher than that of the uncoated phosphor.     

Luminescence Properties of Sm^3＋ doped Bi2ZnB2O7

The phosphors of （Bi1- x Smx ） 2ZnB2O7 （ x = 0. 01, 0. 03, 0. 05, 0. 07, and 0. 09） were synthesized by conventional solid state reaction. The purity of all samples was checked by X-ray powder diffraction （XRD）. XRD analysis shows that all these compounds are of a single phase of Bi2ZnB2O7, indicating that the Bi^3＋ in Bi2ZnB2O7 can be partly replaced by the Sm^3＋ without the change of crystal structure. The excitation and emission spectra at room temperature show the typical 4f-4f transitions of Sm^3＋ . The dominant excitation line is around 404 nm due to ^6H5/2→^4K11/2 and the emission spectrum consists of a series of lines at 563, 599, 646, and 704 nm due to ^4G5/2→^6H5/2, ^6H7/2, ^6H9/2, and ^6H11/2, respectively. The optimal concentration of Sm^3＋ in Bi2ZnB2O7 is about 3mol% （relative to lmol Bi^3＋ ） and the critical distance Rc was calculated as 2.1 nm. The temperature dependence of the emission intensity of Bi1.94Sm0.06ZnB2O7 was examined in the temperature range between 100 and 450 K. The quenching temperature where the intensity has dropped to half of the initial intensity is 280 K. The lifetime for Sm^3＋ in Bi1.94Sm0.06ZnB2O7 is fitted as a value of 0.29 and 1.03 ms.