光伏型硅X射线探测器

介绍了垂直多结器件的结构,给出了热迁移制结的工艺条件和结果,特别介绍了处理器件电极引线的隔离线方法,解决了经过热迁移掺杂后光刻电极套不准的难题,以及把所有p型区域连接起来的问题,达到了敏感区金属零遮挡的目的.同时分析了工艺条件对器件性能的影响.通过对敏感区和无效区的计算和对比,对器件的几个电流参数进行了详细的计算;对两种靶材的标识谱在器件内产生的光电子的收集效率做了计算,对器件的光谱响应度也作了计算和分析;同时对器件窗口材料的选择进行了详细讨论;最后叙述对器件进行的实验验证,通过对金属模板上模拟缺陷的测量,证明器件有足够的灵敏度和分辨率.     

考虑电极反射与吸收条件下4H-SiC金属-半导体-金属紫外光探测器响应度对器件结构依赖性的二维数值计算

本文使用数值计算方法建立了4H-SiC金属-半导体-金属紫外光探测器的二维模型。通过求解泊松方程,电流连续方程以及电流密度方程计算了该探测器依赖于器件结构的响应度。计算结果与实验数据符合较好,验证了模型的正确性。考虑到金属电极对紫外光的反射和吸收,详细研究了各种器件参数对响应度的影响并分析了其工作机理。结果表明响应度与电极高度成反比并随电极间距和宽度的增加而增加。紫外可见比大于1000。通过优化探测器结构,电极高度为50 nm电极宽度和间距为3 μm 和9 μm的探测器在10V偏压下具有最高响应度 180.056 mA/W,同时该探测器的峰值量子效率和最大紫外可见比分别为77.93%和1875。     

集成式垂直多结太阳电池的设计与实现

利用高速热迁移掺杂工艺制成垂直多结 PN结阵列 ,同时扩散短路区在阵列的一端连接所有的 P区 ,形成一个单元电池 ,对大片不分割单元电池 ,只加宽金属线条将相邻单元电池的正负极短路形成欧姆接触 ,这样的单元电池的连接就是集成电池。这样的器件有两个光照面 ,电极对光的遮蔽面积非常小。     

HgCdTe环孔p-n结光伏探测器暗电流机制

P-n结I-V特性是红外光伏探测器的一个重要指标,它直接决定了探测器的动态电阻和热噪声,决定了探测器的性能.实验主要对离子刻蚀环孔P-n结HgCdTe长波光伏探测器进行变温,I-V特性测试分析.通过对测试实验数据拟合,从理论上计算了探测器在不同温度及不同偏压下的暗电流,得到一些相关的材料和器件性能参数.希望利用分析计算结果了解工艺中存在的问题,对改进工艺及提高器件性能提供理论依据.     

无平面结敏感区及其栅控光探测器

研制了在平面结内无敏感区的光探测器,测量结果表明其光电流是显著的。在这种器件的基础上,研制了受栅极控制的无平面结敏感区光探测器,实验测量说明这种器件的光电流输出不仅依赖于受光信号,还受到栅极电压信号的控制。这种输出信号受到光与电信号双重控制的特性,扩大了光探测器件的应用领域。     

非制冷铁电混合式红外焦平面探测器

介绍了国内非制冷铁电混合式红外焦平面探测器的最新研究进展,给出器件所采用的铁电材料的基本物理和电学特性参数、器件的热隔离技术和相应参数、读出电路的基本结构和性能,详细讨论了影响性能的关键参数和工艺,最后对试验结果进行了分析.     

AlGaN器件欧姆接触的研究进展

作为制备光电子器件例如紫外光子探测器、异质结场效应晶体管(HFET)、高电子迁移率晶体管(HEMT)异质结场效应管等的一种宽禁带半导体材料, III V 族氮化物AlGaN器件近年来颇受关注.AlGaN与金属之间的低阻欧姆接触的实现问题阻碍了AlGaN(基)器件的发展.通过对相关文献的归纳分析,介绍了近年来AlGaN器件在欧姆接触形成、金属化方案、合金化工艺及表面处理等方面的研究进展.     

硅基650nm增强型光电探测器

通过在硅PIN结构的基础上进行改进,采用硅P＋PIN结构,研制出650nm增强型光电探测器。详细介绍了器件结构设计和制作工艺。对器件响应度、暗电流和响应速度等参数进行计算与分析。实验结果表明,器件响应度达0.448A/W（λ=650nm）,暗电流达到0.1nA（VR=10V）,上升时间达到3.2ns。     

GaN HEMT器件热特性的电学测试法

基于JEDEC颁布的结到壳热阻瞬态热测试界面法,对测试GaN HEMT器件热特性的电学法进行了研究.通过合理的测试电路设计,有效解决了GaN HEMT器件电学法测试中的栅极保护问题和自激问题,实现了GaN HEMT器件的界面热阻测量.根据测得的热阻-热容结构函数曲线可知,GaN HEMT器件结到壳热阻主要由金锡焊接工艺和管壳热特性决定.结合结构函数分析,对金锡焊接部分热阻和管壳热阻进行排序可剔除有工艺缺陷的器件.与红外热成像法的结温测试结果进行对比分析,证实了电学法测试结果的准确性.     

单型掺杂柱电极的3D硅像素探测器的器件与制造工艺研究

设计了一种新的3D硅像素探测器的器件结构以简化制造工艺.该结构仅包含一种掺杂类型的柱状电极.通过工业级TCAD仿真对这种结构的电学特性进行了深入研究,阐述了它的技术优势及潜在缺陷.同时研究了制造这种3D硅像素探测器的特殊工艺流程和相关关键工艺,并给出了主要工艺结果.     

Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes

A two-dimensional model of a 4H-SiC metal-semiconductor-metal(MSM) ultraviolet photodetector has been established using a self-consistent numerical calculation method.The structure-dependent spectral response of a 4H-SiC MSM detector is calculated by solving Poisson’s equation,the current continuity equation and the current density equation.The calculated results are verified with experimental data.With consideration of the reflection and absorption on the metal contacts,a detailed study involving various electrode heights(H),spacings (S) and widths(W) reveals conclusive results in device design.The mechanisms responsible for variations of responsivity with those parameters are analyzed.The findings show that responsivity is inversely proportional to electrode height and is enhanced with an increase of electrode spacing and width.In addition,the ultraviolet (UV)-to-visible rejection ratio is > 103.By optimizing the device structure at 10 V bias,a responsivity as high as 180.056 mA/W,a comparable quantum efficiency of 77.93%and a maximum UV-to-visible rejection ratio of 1875 are achieved with a detector size of H = 50 nm,S =9μm and W = 3μm.     

Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations

Si-waveguide-integrated lateral Ge p-i-n photodetectors using novel Si/SiGe buffer and two-step Ge-process are demonstrated for the first time. Comparative analysis between lateral Ge p-i-n and vertical p-Si/i-Ge/n-Ge p-i-n is made. Light is evanescently coupled from Si waveguide to the overlaying Ge- detector, achieving high responsivity of 1.16 A/W at 1550 nm with f_{3 dB} bandwidth of 3.4 GHz for lateral Ge p-i-n detector at 5 V reverse bias. In contrast, vertical p-Si/i-Ge/n-Ge p-i-n has lower responsivity of 0.29 A/W but higher bandwidth of 5.5 GHz at -5 V bias. The higher responsivity of lateral p-i-n detectors is attributed to smaller optical mode overlap with highly doped Ge region as in vertical p-i-n configuration.     

Vertical multijunction solar-cell one-dimensional analysis

The vertical multijunction solar cell is a photovoltaic device which may allow conversion efficiencies higher than conventional planar devices. A one-dimensional model of the device is presented here which allows a simple and straightforward analysis of device performance to be conducted. The analysis covers the derivation of device short-circuit current, saturation current, open-circuit voltage, and maximum power as a function of illumination spectra, device geometry, and device material properties.     

基于TDI-CCD的红外焦平面探测技术

TDI-CCD器件是近年来发展起来的一种新型光电传感器,与普通线阵CCD相比具有很高的响应度和更高的灵敏度。基于TDI-CCD构成的红外焦平面探测器件灵敏度高,分辨率高,能在更低照度下工作,具有广阔的应用前景。本文详细介绍了它的工作原理及成像特点,并对器件结构、图像时钟、电荷包转移效率、同步控制等技术问题进行了讨论。     

Matching Condition of Direct THz-Signal Detection from On-Chip Resonating Antennas with CMOS Transistors in Non-resonant Plasma Wave Mode

This paper presents matching condition for detector at THz frequencies, which directly read signals from an integrated antenna. We use direct THz-signal detections with CMOS transistors in non-resonant plasma wave mode, which are embedded in on-chip resonating antennas. The detector detects THz envelope signals directly from the side edges of the on-chip patch antennas. The signal detection mechanism is studied in the view of the impedance conditions of the antenna and the detector. The detectors are implemented with stacked transistors structures to achieve high responsivity. The measured responsivities of the detectors with antenna impedances that were simulated to be 599.7, 912.3, 1565, and 3190.6 Ω agree well with the calculated values. Moreover, the responsivity dependence on the detector impedance is shown with two different input impedances of the detectors. Since CMOS circuit models from foundry are not accurate at frequencies higher than f _t , the matching guideline between the antenna and the detector is very useful in designing high responsivity detectors. This study found that a detector has to have a large input impedance conjugately matched to the antenna’s impedance to have high responsivity.     

探测器中扩散结深对光响应度影响的研究

研究了InGaAs/InP PIN探测器中扩散结深对光响应度的影响,对不同扩散条件下的光电探测器进行了对比实验,测量了不同结深下器件的Ⅰ-Ⅴ特性和光响应度.结果表明:扩散结深对器件的Ⅰ-Ⅴ特性影响不大,而对光响应度影响很大,当结深处在InGaAs吸收层上表面时,光响应度最大值出现在波长1.55um处;而当结深进入衬底InP层后,光响应度最大值则出现在波长1um处.另外,在闭管扩散实验中,严格控制温度和扩散时间是控制结深的关键,研究了不同扩散温度和扩散时间下的结深,为器件的制备提供了参考.     

大面阵碲镉汞长波红外焦平面器件刻蚀工艺非均匀性研究

作为探测器组件的性能指标之一,响应率非均匀性对其实际应用具有重要影响,尤其是在低背景空间应用领域。大面阵探测器芯片的接触孔尺寸不均匀是导致器件响应不均匀的因素之一。对1280×1024大面阵长波红外探测器芯片的接触孔刻蚀工艺进行了研究,并提出了优化改进措施。结果表明,本文方法可提高刻蚀工艺的均匀性,进而降低探测器组件响应率的非均匀性。     

Far-infra-red microbolometers made with tellurium and bismuth

The properties of bismuth and tellurium microbolometers are presented. The Te devices are shown to have responsivities approximately 100 times that of the more conventional Bi microbolometers. The Te device impedance is, however, much larger than Bi microbolometers of comparable size. To the authors' knowledge, the Te device has the highest responsivity yet reported for a microbolometer detector.<>     

Solution‐Processed Flexible Broadband Photodetectors with Solution‐Processed Transparent Polymeric Electrode

Room‐temperature solution‐processed flexible photodetectors with spectral response from 300 to 2600 nm are reported. Solution‐processed polymeric thin film with transparency ranging from 300 to 7000 nm and superior electrical conductivity as the transparent electrode is reported. Solution‐processed flexible broadband photodetectors with a “vertical” device structure incorporating a perovskite/PbSe quantum dot bilayer thin film based on the above solution‐processed transparent polymeric electrode are demonstrated. The utilization of perovskite/PbSe quantum dot bilayer thin film as the photoactive layer extends spectral response to infrared region and boosts photocurrent densities in both visible and infrared regions through the trap‐assisted photomultiplication effect. Operated at room temperature and under an external bias of ‐1 V, the solution‐processed flexible photodetectors exhibit over 230 mA W^‐1 responsivity, over 1011 cm Hz1/2/W photodetectivity from 300 to 2600 nm and ≈70 dB linear dynamic ranges. It is also found that the solution‐processed flexible broadband photodetectors exhibit fast response time and excellent flexibility. All these results demonstrate that this work develop a facile approach to realize room‐temperature operated ultrasensitive solution‐processed flexible broadband photodetectors with “vertical” device structure through solution‐processed transparent polymeric electrode.