共查询到19条相似文献,搜索用时 78 毫秒
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Ti(C,N)薄膜的复合硬度与本征硬度的研究 总被引:3,自引:0,他引:3
本文对不同性质的膜-基体系通过确定C的具体取值对Joensson-Hogmark模型予以修正,研究了等离子体增强化学气相沉积Ti(C,N)薄膜的硬度及其随成分组织的变化,Ti(c,N)薄膜具有较小的晶粒尺寸和较高的残余压应力,其硬度远高于一般的整体材料,在确定的工艺条件下,其值主要取决于膜的含碳量,大体成线性增加关系。 相似文献
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对几种薄膜硬度测试方法的评定 总被引:8,自引:0,他引:8
用传统的显微硬度计直接测量薄膜硬度难以避免基体的影响且小载荷压入时产生的较小的压痕不易被准确测量。纳米压入仪是一种可以精确控制及测量压入深度的高精度仪器。这种通过测压入深度测硬度值的技术可以减少基体硬度对薄膜测量硬度的影响同时产生的误差较直接测压痕对角线的误差小。但是,纳米压入仪对试样表面光洁度要求高,仪器价格昂贵。这些都限制其在实际工业中的应用。较好的一种硬度测试方法是通过传统显微硬度计在不同的大载荷下测得膜基复合硬度,同时建立适当的模型计算出薄膜的本征硬度值。此方法可能更适合于常规应用。 相似文献
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几种薄膜涂层硬度测试方法的比较 总被引:1,自引:1,他引:0
对薄膜涂层而言,硬度是定量分析其质量的基本指标.硬度的测试方法很多,所用测试方法不同,导致测试结果迥异.系统介绍了表面薄膜涂层硬度的几种测试方法,并对各方法的特点和适用范围进行了对比和评定.经对比可知:测试涂层的本征硬度,采用精确绘Meyer图,由公式法求得涂层本征硬度是最便捷、最准确、最科学的方法之一. 相似文献
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本文讨论了用常规维氏硬度计测量离子镀所得薄膜硬度时所产生的问题,不同载荷下硬度值的变化,以及应如何准确地测量薄膜的硬度,并分析了测量结果。 相似文献
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Ti-Si-N纳米复合薄膜的结构与性能 总被引:1,自引:0,他引:1
用工业型脉冲直流等离子体增强化学气相沉积技术,在高速钢(W18Cr4V)表面沉积了Ti-Si-N复合薄膜,研究了Ti-Si-N复合薄膜的微观组织和力学性能.结果显示,薄膜相结构为纳米晶TiN和纳米晶或非晶TiSi2以及非晶相Si3N4;在Si含量为5.0 at%~28.0 at%范围内,薄膜的晶粒尺寸逐渐变大;Ti-Si-N薄膜的显微硬度相对于TiN有明显增加,最高硬度可达40 GPa;高温退火后,Ti-Si-N纳米复合薄膜的显微硬度与晶粒尺寸在800℃高温下仍然保持稳定. 相似文献
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通过Ni、W、P和CeO2、SiO2纳米颗粒的脉冲共沉积,在碳钢基体表面制备出了Ni-W-P-CeO2-SiO2纳米复合薄膜材料,研究了电解液中硫酸镍和柠檬酸浓度对纳米复合薄膜化学组成、沉积速率、显微硬度和微观组织的影响.结果表明:当硫酸镍和柠檬酸浓度分别控制在70 g/L,和120 g/L,时,纳米复合薄膜材料沉积速率(25.32 ìm/h)和显微硬度(6140 MPa)最高.增加硫酸镍浓度,纳米复合薄膜材料晶粒得到细化,但基质金属晶粒轮廓模糊,纳米颗粒在基质金属中分布不均匀.在适宜的柠檬酸浓度(120 g/L)下,纳米复合薄膜材料表面平整光滑、结构致密、晶粒细小,基质金属晶粒轮廓清晰,呈规则圆球型,CeO2纳米颗粒在基质金属中镶嵌均匀,但Si02纳米颗粒沉积量较少且分布不均匀. 相似文献
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采用离子束溅射与磁过滤阴极弧共沉积技术在单晶硅片(400)表面制备Si含量(摩尔分数)为3.2%~15.5%范围内的TiSiN薄膜。采用X射线光电子能谱(XPS)、电子散射谱(EDS)、X射线衍射仪(XRD)研究TiSiN薄膜的显微结构和力学性能。结果表明:低Si含量的薄膜以面心立方晶型的Ti(Si)N固溶体形式存在,择优晶面为(200)面;当Si含量饱和后,出现Ti(Si)N和Si3N4非晶相,形成Ti(Si)N/Si3N4纳米复合结构。薄膜硬度范围在22~26GPa,采用Si3N4小球为对偶时薄膜的摩擦因数均维持在0.13~0.17之间。Si含量为10.9%时,硬度达最大值,结合较低的粗糙度,使其摩擦因数和磨损率达到最低值。 相似文献
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研究了射频等离了体辅助化学气相沉积(PCVD)技术获得的Ti-B-N薄膜的组织结构和力学性能。结果发现,B元素的加入使薄膜中出现TiN纳米晶和BN非晶(nc-TiN/a-BN)的复合结构,其硬度显著高于TiN薄膜,最高可达40GPa。用球盘式摩擦磨损实验考察了薄膜的磨损特性。结果表明:与TiN薄膜相比,Ti-B-N薄膜抗磨损性能有显著提高,磨损机制与TiN薄膜不同,摩擦系数较TiN稍高。 相似文献
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The present communication proposes a new model for the computation of the composite hardness of coated systems as a function of the relative indentation depth, the hardness of both coating and substrate and two material constants that characterize the performance of the film during the indentation test. The model is developed from several important considerations which can be summarized as follows: (1) The substrate starts to contribute to the composite hardness at penetration depths of the order of 0.07–0.2 times the coating thickness, as suggested in the literature. (2) Above such a boundary the composite hardness depends mainly on the intrinsic hardness of the coating, whereas below it such a hardness is determined essentially by the hardness of the mixture that encompasses the remaining part of the film and the plastically deformed substrate material. (3) The hardness of such a mixture is assumed to be constant, except for the possible indentation size effect that could be displayed by the substrate. (4) The composite hardness is given by a linear law of mixtures in terms of the hardness of the coating and such a mixture, and the volume fraction of both materials under the indenter, at any given depth of the latter. It is shown that the model proposed describes very well the hardness data obtained in different systems including: Ti and TiC formed on a chromium steel of a high carbon content; TiN; TiCN and CrN deposited on M2 steel; and TiN0.55, TiN0.65, TiN0.75, ZrN0.50, ZrN0.60 and ZrN0.70 deposited on 316L stainless steel substrate. The results are also compared with those derived from the models earlier advanced by Jönsson and Hogmark, Burnett and Rickerby, Chicot and Lesage and Tuck et al., without taking into consideration the indentation size effect of the film. It is shown that the modified version of the earlier model put forward by Korsunsky et al., published recently by Tuck et al., constitutes a particular form of the model here proposed. 相似文献
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配制了氨基磺酸镍电镀液,找出了最佳镀液成分和工艺参数。使用扫描电子显微镜、超景深显微镜、库仑测厚仪、XRD衍射仪和显微硬度计对镀层进行了分析。结果表明,镀液组成最佳为氨基磺酸镍360g/L、氯化镍20g/L、硼酸38g/L;镀液温度范围在45~60℃,电流密度为5~18A/dm^3。复合镀镍/碳化硅的最大电流密度为15A/dm^3。电流密度15A/dm^2的镀速为113μm/h,镀层硬度为638HV。 相似文献
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A. Hadipour 《金属精饰学会汇刊》2019,97(1):43-47
Theoretical aspects of the electrodeposition of composite coatings prepared by pulsed currents and also the variation of coatings hardness with the pulse parameters have been presented in this paper. The effect of the grain size, polarisation, pulse-plating parameters and incorporation of ceramic particles on the hardness or flow stress are also reported. The theoretical relationship obtained showed that with increasing polarisation and particle incorporation, the hardness of the coatings was increased. In addition, by decreasing the grain size, frequency and duty cycle the hardness was increased. 相似文献
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Layered LiCoO2 (HT-LiCoO2) films were grown on Pt-metalized silicon (PMS) substrates and polished bulk nickel (PBN) substrates by pulsed laser deposition. The effects of substrate temperature, oxygen pressure, and substrate surface roughness on the microstructure of LiCoO2 films were investigated. It has been found that a higher substrate temperature and a higher oxygen pressure favor the formation of better crystallized and less lithium-deficient HT-LiCoO2 films. The HT-LiCoO2 film deposited on PBN substrates consists of large randomly orientated equiaxial grains, whereas on PMS substrate, it is made up of loosely packed highly [001] preferential orientated triangular shaped grains with the average grain size less than 100nm. Electrochemical measurements show that the highly [001] preferentially orientated nanostructured HT-LiCoO2 thin film grown on PMS substrate has good structural stability upon lithium insertion/extraction and can deliver an initial discharge capacity of approximately 45 μA·h·cm-2μm-1 with a cycling efficiency of above 99% at the charge/discharge rate of 0.5C. 相似文献
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ZnSe/SiO2 composite thin films was prepared by sol-gel method. XRD results indicate the phase structure of ZnSe particles embedded in ZnSe/SiO2 composite thin films is sphalerite (cubic ZnS). Spectroscopic ellipsometers were used to investigated the dependences of ellipsometric angle with wavelength of ZnSe/SiO2 composite thin films. The optical constant, thickness, porosity and the concentration of ZnSe of ZnSe/SiO2 thin composite films were fitted according to Maxwell-Garnett effective medium theory. The thickness of ZnSe/SiO2 composite thin thin films was also measured through surface profile. The photoluminescence properties of ZnSe/SiO2 thin composite thin films was investigated through fluorescence spectrometer. The photoluminescence results show that the emission peak at 487 nm (2.5 eV) is excited at 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal(2.58 eV). The strength free exciton emission and other emission peaks correlating to ZnSe lattice defect were also observed. 相似文献
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采用离子束溅射沉积了不同厚度的Co膜和Cu膜,利用四电极法测量了薄膜的电阻率,从而得到了Co膜和Cu膜的电导率随薄膜厚度的变化关系。实验结果表明,Co膜和Cu膜的电学特性都具有明显的尺寸效应。比较了同时考虑表面散射和晶界散射的电导理论得到的电导率公式与实验结果,不同薄膜厚度电导率的理论结果与实验结果符合较好。提出了厚度作为金属薄膜生长从不连续膜进入连续膜的一个特征判据,并利用原子力显微镜(AFM)观测了膜厚在特征厚度附近的Co膜和Cu膜的表面形貌。 相似文献
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TiPdNi thin films were prepared by magnetron sputtering onto unheated glass and silicon substrate.Atomic force microscope,energy-dispersive X-ray microsanalyzer,X-ray diffractometer,differential scanning calorimeter and optican microsope were used to characterize the films.It is found that the surface morphology of the films change during the sputtering process and a shift of about 3%Ti(mole fraction(content from the center to the edge of the substrate occurs.The freestanding as-deposited films undergo crystallization followed by three kinds of cooling conditions.For all these heattreated films,B2→B19→B19‘ two-stage phase transformation takes place.Many Ti2Ni and Ti2Pd type of precipitates are detected in the films.The constraint films on silicon substrate are crystallized at high temperature.After crystallization,the films show a two-way shape memory effect. 相似文献
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采用X射线吸收光谱研究了热丝化学气相沉积(CVD)合成的纳米金刚石薄膜和脉冲激光沉积的纳米SiC薄膜.结果表明:纳米金刚石薄膜的碳K边X射线吸收精细结构光谱显示的激发峰相当于微米金刚石薄膜的蓝移,是量子效应的显著特征,证明制备的是纳米金刚石薄膜,与高分辨透射电镜的结果完全吻合;纳米SiC薄膜的硅K边X射线吸收精细结构光谱和扩展X射线吸收精细结构光谱也显示了纳米薄膜短程有序的结构特征,表明获得的是纳米SiC薄膜. 相似文献