化学溶液法外延组装ZnO分级纳米结构

采用气相法、液相法相结合的方法外延组装了一种形貌新颖的复杂ZnO分级纳米结构--"纳米毛刷".首先用热蒸发的方法制备了宽面为极性面的ZnO纳米带,然后采用化学溶液法,在强碱溶液中在ZnO纳米带的极性面上外延生长Zno纳米棒阵列,实现了ZnO分级纳米结构"由下而上"地外延组装.采用负离子配位多面体生长基元模型讨论了ZnO分级纳米结构的外延组装机理.这种ZnO分级结构的实现,可望作为ZnO纳米器件的原型材料构建新型光电器件.     

GaN纳米棒的制备及机理研究

本文分别用三甲基镓和高纯蓝氨作为Ga源和N源,Ni(NO3)2作为催化剂,在Si(111)衬底上制得针尖状GaN纳米棒.测试结果表明制备的GaN纳米棒是沿<100>方向生长的纯六方相结构.通过对生长过程的分析,我们认为GaN纳米棒的生长过程不仅受到VLS机制的控制,而是多种生长方式共同作用的结果.在反应的初期,GaN纳米棒的生长遵从VLS机制;但是随着GaN纳米棒轴向和径向的生长,GaN纳米结构中纳米棒端部的Ni催化剂纳米球会被"挤"出顶部,在较大的气流流速下被吹落至衬底上,失去催化剂诱导作用的纳米棒随后自行外延生长;而吹落至衬底上的Ni催化剂纳米球成为第二次生长有利的形核位置,且再次生长出粗短的纳米棒.因此不同生长机制得到的GaN纳米棒交织在一起,形成了最终的GaN纳米结构.     

HCVD法生长InN纳米棒的可控制备及表征

实验通过自制的卤化物化学气相沉积(HCVD)装置在Si(111)衬底上实现了InN纳米棒的可控生长。系统研究了InCl_3源区温度、NH_3流量和N_2载气流量对InN纳米棒生长的影响,并利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X射线能谱仪(EDS)对样品结构,形貌和元素组成进行了表征。结果表明,InCl_3源区温度的升高,有利于提高生长区InN纳米棒的形核率和生长速率;NH_3流量大小对InN纳米棒晶体质量有重要影响,适量NH_3流量会满足In源生长需要的Ⅴ/Ⅲ比,改善纳米棒晶体质量,当NH_3流量过大时,In空位缺陷的形成会使晶体质量变差;N_2载气流量大小会影响In源和N源的浓度和偏压,从而能有效调控InN纳米棒直径和生长速率。研究实现了InN纳米棒的可控生长,为开发高性能InN纳米棒器件奠定了基础。     

KNO3熔盐中α-Fe2O3纳米棒的制备研究

采用微乳液技术制备了α-Fe2O3纳米棒前驱物,在KNO3熔盐中焙烧成功合成了α-Fe2O3纳米棒一维纳米材料.用TEM、XRD和XPS对其进行了表征,结果表明α-Fe2O3纳米棒直径约为80nm,尺寸分布比较均匀,长度为1～5μm.简单讨论了影响α-Fe2O3纳米棒在KNO3熔盐中形成的因素和α-Fe2O3纳米棒的形成机理.     

ATO纳米结构及其组成可控生长的碳热还原研究

采用碳热还原ATO纳米颗粒的方法,通过控制系统参数,合成了ATO实心球和空心球,以及新奇的船形和四方框形结构,比较分析了ATO实心球和空心球的形成机理,讨论了新奇的船形和四方框形结构的形成原因;通过调整实验参数和载气组成生长了Sb_2O_3的分级结构、纳米棒、纳米棒阵列、纳米片,探讨了4种Sb_2O_3纳米结构的生长机理,对4种Sb_2O_3纳米结构进行了光致发光研究,探讨了不同纳米结构的发光机理。总之,该研究实现了同一系统多种纳米结构和组成的可控生长。     

磁控溅射与氨化法催化合成GaN纳米棒

使用一种新奇的稀土元素作为GaN纳米棒生长的催化剂,通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜成功合成了大规模的GaN纳米棒.采用扫描电子显微镜,X射线衍射,透射电子显微镜,高分辨透射电子显微镜和傅立叶红外吸收光谱来检测样品的形态,结构和成分.研究结果表明,合成的样品为六方纤锌矿结构的单晶GaN纳米棒.最后讨论了GaN纳米棒的生长机理.     

用氢化物气相外延(HVPE)法生长的氮化铟薄膜的性质研究

在自制设备上用氢化物气相外延(HVPE)方法在α-Al2O3以及GaN/α-Al2O3衬底上生长了InN薄膜,并对其性质进行了研究.重点研究了生长温度的变化对所获得的InN薄膜的影响,并利用X射线衍射研究了InN薄膜的结构,用扫描电子显微镜研究了其表面性质,用霍尔测量研究了其电学性质.X射线衍射的结果表明,直接在α-Al2O3上生长得到的是InN多晶薄膜;而在GaN/α-Al2O3上得到的InN薄膜都只有(0002)取向,并且没有金属In或是In相关的团簇存在.综合分析可以发现,在650℃时无法得到InN薄膜,而在温度550℃时生长的InN薄膜具有光滑的表面和最好的晶体质量.     

TiO_2纳米棒-ZnO纳米片分级结构的制备及光电性能

采用两步水热法在无种子层的基础上制备了新颖的TiO_2纳米棒-ZnO纳米片分级结构。采用旋涂辅助连续离子反应方法分别在TiO_2纳米棒阵列和TiO_2纳米棒-ZnO纳米片分级结构中沉积窄禁带半导体光敏剂CdS纳米晶,形成CdS/TiO_2纳米棒复合膜和CdS/TiO_2-ZnO分级纳米结构复合膜。利用SEM、TEM、XRD、紫外-可见吸收光谱、瞬态光电流图谱等分析手段对样品的形貌结构以及电极的光吸收和光电性能进行了表征和测试。结果表明,沉积光敏层CdS后,TiO2纳米棒-ZnO纳米片分级纳米结构膜的瞬态光电流明显高于TiO_2纳米棒阵列膜,尤其是在500nm处光电响应出现明显增强;以P3HT为p型聚合物材料组装杂化太阳电池,光伏性能测试结果表明,以P3HT/CdS/TiO_2-ZnO分级结构复合膜制备的杂化太阳电池能量转换效率可达0.65%,与P3HT/CdS/TiO2复合膜制备的杂化太阳电池的能量转换效率相比提高了58%。     

海胆形氧化锌纳米结构的制备与光催化性能

以Zn(AC)2.2H2O为原料,NH3.H2O为络合剂,在NaBH4辅助下140℃水热反应2 h制备出ZnO纳米棒自组装的海胆形结构。采用X射线衍射仪、扫描电镜和透射电镜对产物进行表征。结果表明,海胆形ZnO结构的直径约为3～17μm,它是由直径约为100 nm,长度约为500 nm～3μm范围的ZnO纳米棒自组装而成。提出了ZnO纳米棒自组装海胆形结构的可能生长机理。NaBH4与溶液中的少量H+结合生成H2气泡,ZnO纳米晶吸附在H2的气液界面形成了纳米颗粒自组装的微球,随着反应时间的延长,组装成微球的ZnO纳米颗粒沿[0001]方向取向生长成ZnO纳米棒,最终形成ZnO纳米棒自组装的海胆形颗粒。室温下以海胆形ZnO纳米结构和ZnO纳米棒为光催化剂,以偶氮染料甲基橙作为光催化研究对象,紫外光照70 min,对甲基橙的降解率分别为97%和67%。     

ZnO纳米棒的制备与气敏性能的研究

以Zn(NO3)2·6H2O和NaOH为原料,CTAB为表面活性剂,通过微波辅助液相反应过程在低温下成功地制备了ZnO纳米棒.X射线衍射谱和扫描电镜结果表明,产物是六方纤锌矿结构ZnO纳米棒,长度为5～30μm,直径为0.1～1μm.气敏性能测试表明,所制备的ZnO纳米棒对H2S气体具有较好的选择性,但灵敏度不高.对ZnO纳米棒进行In掺杂后,对H2S气体的灵敏度和选择性大幅提高,在工作温度为332℃时,对体积分数为50X10-5的H2S灵敏度为29.217,说明In掺杂的ZnO纳米棒是有潜力的探测H2S气体的气敏传感器材料.     

Controlled growth of novel doorframe-like ITO nanostructures and their photoluminescence properties

This paper describes a thermal evaporation method that generated large-scale novel doorframe-like ITO nanostructures by regularly switching flow rate of the carried gas. Their morphology and microstructures were determined by scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy and photoluminescence spectroscopy. The as-synthesized doorframe-like nanostructures are single crystal with diameters ranging from hundreds of nm to about 1 μm. The growth direction of the doorframe-like nanostructures are < 100> and < 011> and the growth process follows a self-catalytic vapor-liquid-solid mechanism. The PL spectrum of the doorframe-like nanostructures shows two emission bands around 418 and 505 nm, which is probably resulted from oxygen vacancies, oxygen-indium vacancy pairs and impurity level, respectively.     

Synthesis and photoluminescence properties of aligned Zn2GeO4 coated ZnO nanorods and Ge doped ZnO nanocombs

Aligned Zn₂GeO₄ coated ZnO nanorods and Ge doped ZnO nanocombs were synthesized on a silicon substrate by a simple thermal evaporation method. The structure and morphology of the as-synthesized nanostructure were characterized using scanning electron microscopy and transmission electron microscopy. The growth of aligned Zn₂GeO₄ coated ZnO nanorods and Ge doped ZnO nanocombs follows a vapor-solid (VS) process. Photoluminescence properties were also investigated at room temperature. The photoluminescence spectrum reveals the nanostructures have a sharp ultraviolet luminescence peak centered at 382 nm and a broad green luminescence peak centered at about 494 nm.     

Synthesis of chainlike In2Ge2O7/amorphous GeO2 core/shell nanocables and their luminescence

Novel chainlike In2Ge2O7/amorphous GeO2 core/shell nanocables were successfully synthesized by the simple thermal evaporation method without the presence of catalyst. The growth process of the nanocables is based on vapor-solid (VS) growth mechanism. Its morphology and microstructures were characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence spectroscopy. Studies indicate that typical chainlike nanocables consist of single crystalline In2Ge2O7 nanowires (core) with diameter of about 30 nm and amorphous GeO2 chainlike nanostructures (shell). Four emission peaks, namely 401 nm, 448.5 nm, 466.5 nm, and 491 nm, were observed in the room-temperature photoluminescence measurements.     

Fabrication and growth mechanism of hexagonal zinc oxide nanorods via solution process

This article presents, the fabrication of perfectly hexagonal zinc oxide nanorods performed via solution process using zinc nitrate hexahydrate (Zn(NO₃)₂·6H₂O) and hexamethylenetetramine (HMT) at various concentrations of i.e. 1 × 10⁻³ to 10 × 10⁻² M in 50 mL distilled water and refluxed at 100 °C for 1 h. We used HMT because it acts as a template for the nucleation and growth of zinc oxide nanorods, and it also works as a surfactant for the zinc oxide structures. The X-ray diffraction patterns clearly reveal that the grown product is pure zinc oxide. The diameters and lengths of the synthesized nanorods lie in the range of 200–800 nm and 2–4 μm, respectively as observed from the field emission scanning electron microscopy (FESEM). The morphological observation was also confirmed by the transmission electron microscopy (TEM) and clearly consistent with the FESEM observations. The chemical composition was analyzed by the FTIR spectroscopy, and it shows the ZnO band at 405 cm⁻¹. On the basis of these observations, the growth mechanism of ZnO nanostructures was also proposed.     

Synthesis and optical properties of single-crystalline GaN nanorods

Single-crystalline GaN nanorods were successfully synthesized on Si(1 1 1) substrates through ammoniating Ga₂O₃/Mo films deposited on the Si(1 1 1) substrate by radio frequency magnetron sputtering technique. The as-synthesized nanorods are confirmed as single-crystalline GaN with wurtzite structure by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). Scanning electron microscopy (SEM) displays that the GaN nanorods are straight and smooth with diameters in the range of 100-200 nm and lengths typically up to several micrometers. X-ray photoelectron spectroscopy (XPS) confirms the formation of bonding between Ga and N. The representative photoluminescence spectrum at room temperature exhibits a strong and broad emission band centered at 371.1 nm, attributed to GaN band-edge emission. The growth process of GaN nanorod may be dominated by vapor-solid (VS) mechanism.     

CdS microflowers and interpenetrated nanorods grown on Si substrate: Structural,optical properties and growth mechanism

CdS semiconductor with different morphologies have been achieved by simple thermal evaporation of CdS powder at 1050 °C in a flowing Ar atmosphere. The products were characterized by X-ray diffraction, Scanning electron microscopy, Transmission electron microscopy and Photoluminescence. microflowers and interpenetrative nanorods of CdS were formed on catalyst free Si wafers at a temperature of 700 °C and 600 °C respectively. The flower like structures are composed of many interleaving nanorods which have the uniform diameter of about 700 nm and a well crystalline structure with [0001] as growth direction. The interpenetrative nanorods are found to be bounded with six side facets. X-ray diffraction studies revealed the hexagonal structure in both the products. The formation mechanism of microflowers and interpenetrated nanorods was discussed on the basis of nucleation growth kinetics. Room temperature photoluminescence spectra showed a strong green emission band (at ∼510 nm) from the CdS flower like structures, but on the other hand a red emission shoulder along with strong green emission band was observed for interpenetrative nanorods. These CdS micro/nanostructures with abundant morphologies may find applications in various micro/nanodevices, and the kinetics-driven morphology might be exploited to synthesize similar structures of other functional II–VI semiconductors.     

Synthesis, microstructure and photoluminescence of well-aligned ZnO nanorods on Si substrate

Well-aligned zinc oxide (ZnO) nanorods were densely grown on Si substrate using ZnO thin-film seed layer without any catalysts and/or additives by a simple solid–vapour phase thermal sublimation technique. The growth mechanism can be interpreted as self-catalyst of zinc particles based on vapour–solid (VS) mechanism. High-resolution transmission electron microscopy (HRTEM) image and selected area electron diffraction (SAED) pattern confirmed that the single-crystalline growth of the nanorods were preferentially along c-axis of hexagonal crystal system. High-crystal quality ZnO nanorods with strong near band edge emission centred at 380 nm can be achieved on Si substrate by the introduction of sufficient oxygen during the nanorod growth processing.     

Self-catalytic growth and photoluminescence properties of ZnS nanostructures

Mass production of uniform wurtzite ZnS nanostructures has been achieved by a H₂-assisted thermal evaporation technique. X-ray diffraction (XRD) analyses, scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) observations show that the ZnS nanostructures consist of nanobelts, nanosheets with a hexagonal wurtzite structure. The as-synthesized nanobelts have a length of several tens of micrometers and a width of several hundreds of nanometers. Self-catalytic vapor-liquid-solid (VLS) growth and vapor-solid (VS) growth are proposed for the formation of the ZnS nanostructures because neither a metal catalyst nor a template was introduced in the synthesis process. Room-temperature photoluminescence measurement indicates that the synthesized ZnS nanostructures have a strong emission band at a wavelength of 443 nm, which may be attributed to the presence of various surface states.     

Growth and optical and field emission properties of flower-like ZnO nanostructures with hexagonal crown

Flower-like zinc oxide (ZnO) nanostructures with hexagonal crown were synthesized on a Si substrate by direct thermal evaporation of zinc power at a low temperature of 600 °C and atmospheric pressure. Field emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman spectroscopy and photoluminescence were applied to study the structural characteristics and optical properties of the product. The result indicated that the flower-like product with many slender branches and hexagonal crowns at the ends were single-crystalline wurtzite structures and were preferentially oriented in the <001> direction. The photoluminescence spectrum demonstrated a strong UV emission band at about 386 nm and a green emission band at 516 nm. The field emission of the product showed a turn-on field of 3.0 V/µm at a current density of 0.1 μA/cm², while the emission current density reached about 1 mA/cm² at an applied field of 5.9 V/μm.     

A simple route to the synthesis of single crystalline copper metagermanate nanowires

Single crystalline copper metagermanate (CuGeO₃) nanowires with the diameter of 30–300 nm and length of longer than 100 µm have been prepared by a simple hydrothermal deposition route. X-ray diffraction (XRD), selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and Raman analyses confirm that the nanowires are orthorhombic single crystals with a main growth direction along <101>. Room temperature photoluminescence (PL) measurement shows a strong blue emission peak at 442 nm with a broad emission band. The blue emission may be ascribed to radiative recombination of oxygen vacancies and oxygen–germanium vacancies. The formation process of CuGeO₃ nanowires is also discussed.