面向多功能射频的综合射频前端技术研究

多功能综合射频系统是基于共用的电子平台,将雷达、电子战或通信等多种功能集成日益成为一种发展趋势。作为多功能综合射频系统的关键,综合射频前端的发展受到世界各国的广泛重视。从介绍多功能综合射频系统的发展情况和体系架构出发,结合实际应用和工程实现,分析了综合射频前端的概念和实现,并在此基础上重点探讨了射频孔径综合和射频通道综合这两种方式,阐述了工程可行的设计案例。     

舰载综合射频系统关键技术分析

针对现有海军舰艇存在的天线拥挤、电磁干扰严重和电磁隐身等问题,先进的舰载多功能综合射频系统是未来的发展方向。根据国外舰载综合射频系统的发展状况,分析了综合射频系统的组成及工作原理。舰载综合射频系统的功能利用软件定义,相对于传统的舰载射频系统具有相应的优点。最后,对舰载综合射频系统的关键技术进行了分析。为未来海军发展舰载多功能射频系统的实现提供技术支持。     

基于软件无线电的多功能射频综合一体化设计

在研究国内外雷达、电子战、通信综合一体化技术的基础上,分析了雷达、电子战、通信功能特点及综合一体化带来的优势,提出了基于软件无线电的多功能射频综合一体化设计思路,然后阐述了综合一体化系统架构,给出了雷达、电子战、通信综合一体化方案,最后对综合一体化设计技术、超宽带射频技术、系统软件技术和系统资源管理等关键技术进行了重点讨论,为基于软件无线电的雷达、电子战、通信多功能综合射频系统具体设计提供了借鉴。     

基于MIMO阵列的综合射频系统技术研究

综合射频系统集雷达探测、数据通信和电子干扰等多种功能为一体,显著提升武器平台在复杂战场环境下的生存能力和作战效能,是武器装备的重点发展方向。针对现有综合射频技术难以高效同时实现多功能等不足,提出构建基于多输入多输出(multi-input-multi-output, MIMO)阵列的综合射频系统。研究结果表明,通过充分利用MIMO阵列的空间自由度和波形自由度,基于MIMO阵列的综合射频系统能够同时实现多功能。将系统探测通信性能、反侦察抗干扰能力、兼容性等方面与传统综合射频技术进行对比,表明基于MIMO阵列的综合射频系统具有独特优势。对基于MIMO阵列的综合射频系统关键技术进行了梳理分析和展望。     

多功能综合射频系统的发展与关键技术

基于综合电子系统的演化过程,分析了发展多功能综合射频系统(MFIRFS)的必要性。在分析软件无线电技术的基础上,指出软件无线电技术是实现多功能综合射频系统的有效途径,并给出了多功能综合射频系统的设计框图。最后,讨论了为实现多功能综合射频系统必须首先研究的共用信号、共用孔径以及其它关键技术。     

一种层叠式宽带多功能一体化收发组件设计

随着电子技术的不断发展,现代舰船信息装备对集成雷达、通信、电子战等多种功能的综合射频系统需求越来越高,而收发组件作为综合射频系统的核心部件,其功能和性能直接决定了综合射频系统的作战能力。文章介绍了一种基于射频直采、微波3D异构集成、层叠式垂直互联等技术的超宽带多功能一体化数字收发组件。该组件集成了64个宽带收发通道,并进行数字化处理,具有体积小、重量轻、功能多、功率/动态范围/瞬时带宽参数在线配置等特点,能够同时满足多种功能对收发信道的不同需求。     

多功能射频综合一体化技术的研究

多功能射频综合一体化技术就是利用一个共用的电子信息平台,将雷达、通信及电子战等多种功能集成在一起。在舰载、机载、星载等要求体积、重量、功耗的电子信息设备中,多功能射频综合一体化技术已经成为一种发展趋势,用户越来越迫切希望在一部设备上就能同时实现雷达、通信及电子战等设备的功能,同时完成各种不同的任务。文中对多功能射频综合一体化技术的体系架构进行了分析,重点阐述了该技术在数字式接收机子系统方面的性能和设计,提出了在同一硬件平台上将雷达、通信、电子战等多种功能集成在一起的技术途径。     

相控阵雷达多功能射频与微波设计

随着半导体技术、射频与微波技术、计算机技术的发展及相控阵雷达系统面临复杂的工作电磁环境,相控阵雷达射频与微波设计面临新的机遇与挑战。为了适应相控阵雷达系统多功能、高集成、高性能、低成本的发展需求,结合国外发展现状,从多功能综合射频、异构集成、开放式架构及系统场景仿真等方面对射频与微波设计技术进行叙述。多功能综合射频、开放式架构是相控阵雷达系统的发展趋势,异构集成、系统场景仿真是新的设计手段;利用先进的设计理念与设计手段,缩短相控阵雷达多功能综合射频系统的研制周期,减少系统设计风险,降低系统成本。     

综合射频系统显控的可重构软件架构设计

综合射频系统具备雷达、电子对抗、通信等多种作战能力,其通过前端天线阵面分置、集中数据处理、统一任务调度,统一显示控制,实现作战功能的协同整合,从而提升系统整体作战效能.为此,综合射频系统的显控分系统需要能够进行功能组合,按照当前的作战需求实现功能重构.从综合射频系统显控分系统的使用需求出发,设计了一种支持软件模块进行重构的软件架构,并用Qt实现了此软件架构,然后将其应用到多个工程中.     

面向防空反导一体化的紧耦合舰载综合射频系统技术研究

基于一体化防空反导演化过程，分析当前作战环境对多功能舰载综合射频系统的需求，指出紧耦合综合射频系统较传统电子信息系统的优势，给出紧耦合综合射频系统的概念内涵，重点研究紧耦合综合射频系统关键技术，为相关系统、装备研发提供借鉴和参考。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.