球面近场下相控阵天线口径诊断研究

在近场测量系统中,天线口径诊断是其中一项重要功能,它能够帮助天线设计师发现相控阵天线设计或者网络配置问题.平面近场中的口径诊断技术已经广泛地应用在雷达天线测试中,在球面近场测量中同样需要这种算法.本文基于球面坐标系下电磁场模式方法,得到球面近场条件下的口径反演算法.在仿真模型中计算得到了被测天线的口径场分布,计算结果与理论模型结果吻合.对X波段阵列天线进行了实际测试,得到了不同配置下的阵列天线口径反演结果,经过数据比对,证明了本文算法的幅度反演精度优于1 dB.     

口径/谱域积分-表面积分法的研究

 通过分析口径积分、平面波谱理论关于天线近场计算的特点,获得一种混合的天线近场计算方法.结合表面积分技术,提出了口径/谱域积分-表面积分法,用于三维天线-罩系统电性能数值仿真.该方法吸取了口径积分和平面波谱理论的优点,对于天线近场的分析更为精确、实用.以弹载天线罩为仿真实例,结果表明,与口径积分-表面积分法和平面波谱-表面积分法相比,口径/谱域积分-表面积分法的计算结果与实验结果更为吻合,证明了该算法具有更高的精确度.     

平面近场测量的“诊断”技术

对近场测量的“诊断”技术技术进行了理论和实验研究，采用反演技术重构被测天线的口径分布，实现对被测天线的“诊断”，找出阵列天线失效单元的位置。     

平面波谱恢复算法在平面近场测量中的应用

介绍用于天线平面近场测量的一种近远场变换新算法。该法利用被测天线的平面波谱和口径场幅相分布之间的关系,以及天线口面的约束条件,用G-P迭代算法从平面波谱的置信谱域部分恢复出置信谱域外的平面波谱。这种方法减小了较小截断角下有限扫描面对测量精度的影响,并提高了天线近场测量的效率。     

基于口径场变换的相控阵天线加权系数修正方法

提出了一种基于口径场变换的阵列加权补偿技术,该补偿技术利用仿真或测试的方向图数据,反演等效激励数据,迭代逼近理想的激励数据,进一步修正天线阵列的加权系数,从而获得理想的低副瓣方向图性能.以一个16元八木天线相控阵为例,由于采用多种规格的天线单元,单元方向图增益差异较大,影响合成方向图性能,而通过应用该方法修正后,天线性能接近设计值.仿真结果和近场测试结果进一步验证了该方法的准确性.     

平面近场测量中一种口径场重构技术研究

研究了一种用于平面相控阵天线幅相校准和诊断测试的口径场重构技术.该技术基于等效磁流法,引入矩量法建立平面近场数据与阵列天线口径场分布的联系方程,求解此方程获得阵列天线的口径场分布.模拟计算结果与传统的模式展开法对比,证明了等效磁流法的正确性和可行性;接着讨论了平面近场测试中各关键参数对重构结果的影响;最后基于等效磁流法口径场重构技术实现了某有源相控阵天线的测试和校准,证明了该方法的有效性和实用性.     

面向远场计算的波谱射线方法

根据天线远区场对口径波谱的局部依赖特性,引入有效近场的概念,提出一种面向远场计算的波谱射线方法,该法采用波谱射线抽取的方法计算有效近场,通过近场空域积分计算远场,适合于具有雷达罩,透镜等近区散射体的天线远场计算。文中以带罩连续口径及阵列天线的远场方向计算为例,验证了方法的正确性和有效性。     

平面近场反演技术

介绍了一种基于探头补偿的平面近场反演算法,为验证算法的有效性,在暗室对某阵列天线进行了近场反演和远场方向图比对验证。结果表明,该算法反演精度高,可在近场校准完毕后对方向图实现情况进行快速测试验证,提升阵列天线测试效率,有很好的工程实用性。     

随机误差对超低副瓣天线平面近场测量的影响

导出了平面近场测量中近场幅相随机误差所引起的误差谱的解析表达式。利用计算机模拟和统计平均的方法研究了近场幅相随机误差对超低副瓣天线平面近场测量结果的影响 ,并给出不同口径尺寸的超低副瓣天线的平面近场测量 ,为保证- 5 5 d B副瓣± 5 d B的测试精度 ,所能允许的近场幅相随机误差的最大起伏度     

口径面与测量面不平行时的天线近场检测

研究了在被测天线的口径面与平面近场测量面不平行时，将近场测量数据到天线口径面的变换转化成对矩阵方程的求解，采用奇异值分解法，在最小二乘意义下求出天线口径面上的幅相分布，对天线进行诊断和校准，并通过实验验证了该方法的有效性和实用性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.