电荷耦合器件信号电荷转移的数值模拟

建立了线阵埋沟CCD的器件物理模型和数值模拟方法;运用半导体器件模拟软件MEDICI,数值模拟了CCD信号电荷在三相时序脉冲驱动下动态转移过程;模拟计算了CCD电荷转移效率随信号电荷包大小的变化以及暗电子数随埋沟掺杂浓度大小的变化情况。数值模拟结果与理论分析、实验测试结果吻合较好。     

Simulation for signal charge transfer of charge coupled devices

Physical device models and numerical processing methods are presented to simulate a linear buried channel charge coupled devices (CCDs). The dynamic transfer process of CCD is carried out by a three-phase clock pulse driver. By using the semiconductor device simulation software MEDICI, dynamic transfer pictures of signal charges cells, electron concentration and electrostatic potential are presented. The key parameters of CCD such as charge transfer efficiency (CTE) and dark electrons are numerically simulated. The simulation results agree with the theoretic and experimental results.     

A 9-b charge-to-digital converter for integrated image sensors

Charge-to-digital conversion offers advantages over conventional charge readout techniques because it performs digitization directly in the charge domain. The approach consolidates hardware, reduces power and weight, and eliminates many sources of noise and nonlinearity. This paper introduces an architecture for a charge-to-digital converter (CDC) that is tailored toward a charge-coupled device (CCD) implementation. New methods of generating charge, sensing charge, and comparing charge packets are described that improve conversion accuracy. Factors limiting device performance are discussed. Measured results are presented for two prototype CDCs. The first, using buried channel CCDs, is optimized for resolution. It achieves 56 dB spurious free dynamic range (SFDR) at a 2 MHz sampling rate and operates from 5 V. The second, using surface channel CCDs, is optimized for power and speed. It achieves 49 dB SFDR at a 15 MHz sampling rate and consumes 13 mW power at its maximum sampling rate of 22 MHz     

Ultrafast shallow-buried-channel CCD's with built-in drift fields

The delay lines are operated with 5-V two-phase clocks, and a potential gradient is permanently built into the storage gates by a step implant in order to improve the charge transfer efficiency (CTE) at high clocking rates. The charge coupled devices (CCDs) with built-in drift fields were tested up to the 325-MHz limit of the existing clock drivers with no degradation in the CTE(>0.99996), while the equivalent CCDs with uniformly doped storage wells degrade rapidly above 240 MHz. These results are consistent with two-dimensional computer simulations     

埋沟CCD器件电荷处理容量的二维数值模拟

借助于二维器件模拟软件PISCES-IIB,通过在某相CCD电极下的耗尽区注入数量可控的电子电荷,对埋沟CCD器件电荷容量进行了定量分析。采用此方法对一种沟道宽度为7μm的CCD信道电荷容量进行了瞬态模拟,对不同结深、不同沟道掺杂浓度对CCD电荷容量的影响进行了讨论。得到了此结构工艺参数的初步优化结果,即CCD沟道表面掺杂浓度为结深为1 μm时,埋沟CCD的电荷容量可达文章提出的方法适用于其他CCD单元结构电荷容量的模拟。     

电荷耦合器件辐射效应理论分析与模拟试验方法研究

分析了CCD电离效应和位移损伤机理,建立了一种国产埋沟CCD器件物理模型,实现了CCD信号电荷动态转移过程的数值模拟,计算了1MeV、14MeV中子引起的CCD电荷转移效率的变化规律.建立了线阵CCD辐照效应离线测量系统,实现了CCD辐射敏感参数测试.利用Co-60γ源和反应堆脉冲中子,开展了商用器件总剂量和中子位移损伤效应模拟试验,在不同辐照条件下,给出了暗电流信号、饱和电压信号、电荷转移效率以及像元不均匀性的变化情况.     

Development and Testing of a 2-D Transfer CCD

This paper describes the development, operation, and characterization of charge-coupled devices (CCDs) that feature an electrode structure that allows the transfer of charge both horizontally and vertically through the image area. Such devices have been termed two-dimensional (2-D) transfer CCDs (2DT CCDs), as opposed to the conventional devices, which might be called one-dimensional transfer CCDs, but in other respects are the same as conventional CCD devices. Batches of two different 2DT CCD test devices, featuring different electrode structures but with identical clocking operation in each case, were produced and tested. The methodology of 2-D charge transfer in each of the device types is described, followed by a presentation of test results from the new CCDs. The ability of both 2DT CCD transfer electrode schemes to successfully transfer charge in both horizontal and vertical directions in the image section of the devices has been proven, opening up potential new applications for 2DT CCD use     

Dynamic range improvement by narrow-channel effect suppression andsmear reduction technologies in small pixel IT-CCD image sensors

Technologies for narrow-channel effect suppression in photodiodes (PDs) and vertical CCDs (V-CCDs) and for smear reduction in PDs have been developed in order to improve dynamic range in small pixel interline-transfer CCD (IT-CCD) image sensors. The new technologies have been applied to a progressive-scan IT-CCD image sensor with 5 μm square pixels and have (1) increased the charge handling capability of its V-CCDs to 4500 electrons/V; (2) improved its smear value to -95 dB; and (3) increased the saturation charge of its PDs to 2.3×10⁴ electrons     

Simulation and Design of AlGaAs/InGaAs CCDs Based on pHEMT Technology

This paper describes the modeling, design, and fabrication of quarter-micrometer double delta-doped AlGaAs/InGaAs charge-coupled devices (CCDs) whose epitaxial layers and geometry were based around the device structure of commercial pHEMTs. A quasi-2-D physical model has been developed to investigate the properties of this novel 2-D electron gas CCD. This physical model allows the characteristics of the InGaAs transport channel as well as the dc characteristics of the device to be predicted within a reasonable amount of time. This model also shows how "individual" charge packets can be controllably transferred through the device when appropriate clocking voltages are applied to the gates of the CCD. This capacitive gate structure device is then shown to be successfully fabricated using established GaAs heterostructure fabrication techniques to ensure good repeatability. The dc characteristics of the fabricated CCD delay line are included.     

带采样保持功能的CCD驱动脉冲的设计方法

介绍了CCD的内部采样原理和应用EDA技术设计其驱动脉冲电路的原理,阐述了设计方法,同时就几种采样脉冲的产生方法及对输出信号的影响进行了研究,给出了电路仿真波形和CCD的实际输出波形.     

Study of the effect of various parameters on nonlineartransmission-line (NLTL) performance

Nonlinear transmission-line (NLTL) shock-wave generator performance in the presence of frequency-dependent losses is reported. The skin effect is studied using the harmonic-balance technique with the aid of the HP-MDS design database language. Measured results of a 48-section NLTL excited by a 26.6-dBm sinusoidal signal from the literature are compared with simulation with good agreement. Experimental performance of an eight-section GaAs monolithic-microwave integrated circuit NLTL is reported for 26-dBm drive conditions. Schottky diode capacitance-voltage (C-V) characteristics are computed using the Silvaco physical simulator for different doping profiles. Doping profiles are used as a parameter in NLTL design and their effect on NLTL performance is investigated. S-parameter measurements are performed for the GEC Marconi Materials Technology GaAs Schottky diode family from which the C-V characteristics are extracted and used to validate simulation. The problem of variable dynamic range is addressed and variable diode areas are used to enhance matching     

CCD电荷转换因子通用测试方法研究

通过分析电荷耦合器件(CCD)图像传感器光电转换、电荷转移、电荷输出的工作原理,提出了一种通用高效的电荷转换因子(CVF)测试方法。该方法采用在CCD感光区域施加直流偏压,水平区施加连续转移的驱动时序的方式,使CCD光敏区以电荷溢出方式往水平区转移电荷,水平区以固定频率不间断转移输出电荷包,从而让CCD输出强度恒定的响应信号;然后通过复位漏电流与输出信号强度的对应关系计算出CCD器件的CVF值。根据该方法的原理设计了一种适应各种CCD器件的通用测试装置,并对多款CCD进行测试验证。结果表明,该方法有效提高了CCD电荷转换因子的测试效率、测试精度和稳定性。     

On the design of ion implanted buried channel charge coupled devices (BCCDs)

The allowable range for the channel dose of a buried channel CCD is obtained. The maximum charge handling capacity without surface trapping effect is found to depend on the channel dose and the substrate concentration. In the case of two phase buried channel CCDs, the barrier implant dose can be estimated depending on the charge storage capacity desired. The result is applicable to ion implanted shallow junction devices and can be extended to deeper junction epitaxial buried channel devices.     

Computer model and charge transport studies in short gate charge-coupled devices

A computer model has been developed that simulates charge transport of carriers in a surface channel charge-coupled device. This model is based on the charge continuity and current transport equations with a time dependent surface field. The device structure of the model includes a source diffusion an input gate and transfer gate. The present model is the first real simulation of the input scheme of the surface-channel CCDs. The scooping and spilling techniques associated with the charge injection process are simulated by the input diffusion which is included in the model.As an application to a CCD practical problem the present model has been used to study the linearity of the electrical charge injection into surface channel charge-coupled devices. The generated harmonic components of a sinusoidal input are calculated using the transfer characteristics of the input stage obtained from the computer simulation.Using this model the spatial variations of the self-induced fringing field and total currents under the storage and transfer gates were computed. The charge transfer mechanisms for short-gate (L ≤ 8 μm) CCDs was investigated. It was found that for short gates the charge transfer efficiency is governed mainly by the fringing field and self-induced current mechanisms. The results of this study help to clarify the mechanism by which the signal-charge level and gate length affect the charge transfer efficiency.     

大视场空间相机CCD 性能测试及筛选方法

空间相机使用CCD 拼接技术组成长焦平面,可有效地增加空间相机的视场和幅宽。拼接 CCD 之间的性能差异会影响空间相机的成像质量,为了在大视场空间相机研制时挑选高性能且性能一致的CCD,提出了一种大视场空间相机CCD 性能测试与筛选方法。首先,介绍了CCD 的成像电路设计、以及CCD 光谱特性和辐射特性的测试方法。然后,介绍了CCD 的筛选流程,第一步是从各 CCD 裸片的几何特性、信噪比、相对光谱响应、响应非均匀性、非线性、暗电流以及动态范围等角度进行筛选,将不满足指标的CCD 剔除,第二步是依据辐射响应一致性筛选出满足要求的CCD,通过数据分析比较得出饱和辐照度筛选法优于响应度筛选法。最后,采用饱和辐照度筛选法从10 片CCD 中筛选出饱和辐照度一致性最好的4 片CCD,饱和辐照度相对偏差为0.23%,该组CCD 已经被应用于某大视场空间相机的研制,并获得了良好的效果。     

A novel wide dynamic range silicon photodetector and linear imaging array

A silicon photodetector structure utilizing the MOSFET subthreshold effect is discussed. This photodetector, which can be integrated on the same chip with MOSFET circuits or CCDs, provides an analog voltage signal over a wide dynamic range. Photodetector and arrays showed, in the visible spectrum an incoming radiation-detection light-intensity dynamic range of greater than 10/SUP 7/. In addition, the photodetector device was used to realize CCD and self-scanned MOSFET linear arrays. The theory of the new photodetector device and its use in forming linear imaging arrays are discussed. Experimental results are presented.     

高帧频低拖尾帧转移CCD驱动技术

帧转移CCD在先进高光谱遥感技术中具有非常重要的应用价值,而拖尾问题是其在高光谱成像等高帧频应用中存在的最大障碍之一。为了减小拖尾的影响,建立了驱动器、PCB传输线及CCD内部结构一体化的驱动信号传输模型,比传统模型能更准确地预测CCD内部和外部的驱动信号波形;仿真对比了各种典型参数对CCD驱动信号波形的影响,仿真与实测结果具有很好的一致性。根据仿真结果进行了高帧频帧转移CCD驱动电路的优化设计,实现了100 ns的行转移时间,在500 fps的帧频下获得了拖尾系数小于1%的驱动效果,为进一步提高CCD的工作帧频提供了保障。     

Fourier transformation using an electroabsorptive CCD spatial light modulator

The use of a GaAs CCD as a spatial light modulator is described and its application to coherent optical Fourier transformation is analyzed. In this device, the transmission through the two-dimensional buried-channel CCD may be electroabsorption modulated near the GaAs cutoff wavelength since the electric field in each storage well is controlled by the transferred charge. One of the primary advantages of this modulator is the ability to electrically address the device at high speed. Analysis of the two-dimensional modulator with a silicon CCD detector array yields a projected dynamic range approximately equal to the number of modulator array elements. For arrays containing greater than 1000 elements, detector performance and nonuniformities can limit the maximum range to 30-40 dB. The device can also be optically addressed, and in this mode of operation it has a comparable dynamic range to the electrically addressed structure with an optical write energy an order of magnitude lower than liquid crystal or photorefractive light valves. An alternative mode of device operation is a waveguide mode in which the light propagates along an epitaxial layer and is modulated as it passes under a one-dimensional CCD. The detection is done by a second linear CCD. The higher modulation efficiency results in a dynamic range approximately one hundred times the number of elements but is again limited to 30-40 dB because of detector response and nonuniformities.     

CCD图像传感器电极间漏电流自动化测试系统设计

CCD图像传感器电极间漏电流是反映CCD器件可靠性的一个关键参数,在CCD图像传感器的生产过程中,对其电极间漏电流测试是一个重要的检测筛选环节。基于一种漏电流自动化测试方法,设计了一种CCD电极间漏电流自动化测试系统。该系统可根据不同种类CCD器件,自定义被测信号名称、测试通道地址和测试判据,通过计算机软件控制自动循环扫描,自动采集漏电电流数据,形成标准测试报表。该系统具有设置灵活、操作方便、自动化测试等优点,可有效提升CCD生产检查筛选过程中的测试效率和测试设备的通用性。     

Dynamic suppression of interface-state dark current inburied-channel CCDs

It is shown that the time dependence of the carrier generation rate at a depleted surface can be exploited to completely suppress interface-state dark current in buried-channel charge-coupled devices (CCDs). When a surface is switched from an inverted to a depleted state, the generation current recovers with a time constant which is strongly temperature dependent and varies from a few milliseconds at room temperature to nearly 3 h at -80°C. This property can be applied to three- and four-phase CCDs by exchanging charge packets between adjacent phases within a cell at a rate that ensures that each phase remains out of inversion for time that is short in comparison to the recovery time. Measurements of this effect have been made on a CCD imager over the temperature range from -40°C to +22°C, and the results agree well with theory