通信LSI/VLSI工艺

本文介绍通信LSI/VLSI电路制作技术中目前比较通用的工艺。总的来说,通信电路工艺是以前LSI/VLSI22艺的继续和发展。文中论述的重点是那些和过去LSI/VLSI工艺不同的方面,而这些方面主要体现在模拟电路的制作工艺上。     

光学触摸技术综述

光学触摸技术最初是1970年代引入的,最新的突破带来了该技术的复苏。研发者已经能够解决成本、亮环境光下的显示性能,以及组成要素等问题,这里只提及其中的一小部分。本文详细介绍了这些问题是如何解决的;该技术的前景,包括深入了解一下光学触摸系统的几个崭新的发展。     

Origin and control of material defects in silicon VLSI technologies: An overview

Very-large-scale integrated circuits impose stringent demands on the quality of silicon wafers required for their fabrication. This paper is an overview of the interrelationships among silicon characteristics, processing, circuit performance, and crystal growth. The relationship between circuit performance and defects in the substrate is described, particularly the effects resulting form the transition from LSI to VLSI. The defect-generation process is then discussed in terms of as-grown silicon characteristics and crystal-growth conditions that control them. The interdependence of material parameters, internal gettering procedures used to reduce the effect of defects on device performance, and resistance to the warpage of silicon wafers is reviewed, with special emphasis on the current and future requirements of bipolar, MOS, and CCD processes.     

Investigating Reliability Attributes of Silicon Photovoltaic Cells: An Overview

Reliability attributes are being developed on a wide variety of advanced single-crystal silicon solar cells. Two separate investigations: cell-contact integrity (metal-to-silicon adherence), and cracked cells identified with fracture-strength-reducing flaws are discussed. In the cell-contact-integrity investigation, analysis of contact pull-strength data shows that cell types made with different metalization technologies, i.e., vacuum, plated, screen-printed and soldered, have appreciably different reliability attributes. In the second investigation, fracture strength was measured using Czochralskli wafers and cells taken at various stages of processing and differences were noted. Fracture strength, which is believed to be governed by flaws introduced during wafer sawing, was observed to improve (increase) after chemical polishing and other process steps that tend to remove surface and edge flaws.     

媒体描述元数据技术综述

综述了现有的媒体描述元数据技术进行了综述,其中重点详细描述了三种元数据技术:MPEG-7,TV-Anytime,DVBSI,并分别提供了实例化的元数据结构.对现有的元数据技术的性能进行了分析比较.     

风力发电系统及其控制技术综述

主要介绍了国内外风力发电的发展现状,分析了风力发电系统的运行特点与主要控制技术。     

FPGA器件设计技术发展综述

现场可编程门阵列(Field Programmable Gate Array,FPGA)作为一种可编程逻辑器件,在短短二十多年里从电子设计的外围器件逐渐演变为数字系统的核心,在计算机硬件、通信、航空航天和汽车电子等诸多领域有着广泛的应用。伴随着半导体工艺技术的进步,FPGA器件的设计技术取得了飞跃性突破。该文在回顾FPGA发展历史的同时,对目前主流FPGA器件的前沿技术进行总结,并对新一代FPGA的发展前景进行展望。     

VLSI与超纯硅材料

通过VLSI与超纯硅材料关系的论述，阐明了我国VLSI的发展急需解决高质量的超纯硅材料。提高大直径硅片的平整度；氧、碳含量稳定、均匀、可控；提高微区电阻率的均匀性；硅表面洁净、具有密封、屏蔽的防静电包装技术是当今硅材料发展的主攻课题。超纯硅材料的完美结晶特性和超精度加工技术水平取决于基础材料（化学试剂、高纯气体）的高纯度、小颗粒和低杂质含量的控制。     

抓住机遇发展SOI技术

综述了国内外SOI技术的发展状态,探讨了在我国发展SOI技术所面临的问题和解决途径。     

An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies

Low power consumption is a major issue in nowadays electronics systems.This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things(IoT)deployment.Memories are one of the major contributors to power consumption.However,the development of emerging memory technologies paves the way to low-power design,through the partial replacement of the dynamic random access memory(DRAM)with the non-volatile stand-alone memory in servers or with the embedded or distributed emerging non-volatile memory in IoT objects.In the latter case,non-volatile flip-flops(NVFFs)seem a promising candidate to replace the retention latch.Indeed,IoT objects present long sleep time and NVFFs offer to save data in registers with zero power when the application is idle.This paper gives an overview of NVFF architecture flavors for various emerging memory technologies.     

MOSFET迁移率增强技术

随着MOSFET特征尺寸的缩小,载流子的迁移率降低已成为器件性能衰退的主要因素之一,迁移率增强技术因此获得了广泛的研究和应用。衬底诱生应力、工艺诱生应力和采用不同的衬底晶向等三类方法都可以显著提高载流子的迁移率。文章综述了常见的几种迁移率增强技术。     

半导体器件模拟技术的研究

主要介绍了半导体器件模拟中常用的HD模型与DD模型和三角网格划分的常用算法。以泊松方程为例，简要说明了如何在三角网络上离散化方程。同时，介绍了几种求解非线形方程组常用的数值方法。     

动态分频器技术

本文介绍了动态分频器的基本原理；详细叙述了动态分频器电路及其主要工艺技术；综述了国外动态分频器的发展动态。     

VLSI成品率预测与仿真

本文建立ＩＣ光刻工艺相关缺陷计算模型和基于Ｍｏｎｔｅ Ｃａｒｌｏ统计成品率计算模型。阐述了集成电路功能优品率仿真系统ＸＤ－ＹＥＳ实现，讨论了应用ＸＤ－ＹＥＳ实现的功能成品率设计，并给出该系统实用性验证。研究分析表明，其结果与实际结果符合很好。     

Irradiation Defects in Silicon Crystal

The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.     

微氮硅单晶中的空洞型原生缺陷

研究了掺氮和不掺氮直拉硅单晶中,空洞型原生缺陷(voids)的分布行为和其退火性质.从两种晶体不同位置取样,观察与大尺寸voids相关的流水花样缺陷(FPD)沿晶体轴向的分布,然后在1050～1250℃下Ar气中退火不同时间.实验结果表明在掺氮直拉硅中与较大尺寸voids相关的FPD缺陷的密度大量减少,其体内这种FPD缺陷的退火行为与不掺氮直拉硅一样,在高温下才能被有效的消除.这表明在直拉硅中掺氮可以抑制大尺寸的voids的产生,而且掺氮硅中voids的内壁也有氧化膜存在.     

微氮硅单晶中的空洞型原生缺陷

研究了掺氮和不掺氮直拉硅单晶中,空洞型原生缺陷(voids)的分布行为和其退火性质.从两种晶体不同位置取样,观察与大尺寸voids相关的流水花样缺陷(FPD)沿晶体轴向的分布,然后在1050～1250℃下Ar气中退火不同时间.实验结果表明在掺氮直拉硅中与较大尺寸voids相关的FPD缺陷的密度大量减少,其体内这种FPD缺陷的退火行为与不掺氮直拉硅一样,在高温下才能被有效的消除.这表明在直拉硅中掺氮可以抑制大尺寸的voids的产生,而且掺氮硅中voids的内壁也有氧化膜存在.     

ATM over ADSL接入网技术研究

详尽阐述了ATMoverADSL接入网的组网方式和网络模块功能,分析了各种不同的协议模型,并得出结论,ATMoverADSI接入网将获得广泛的应用.     

高可靠先进微系统封装技术综述

在人工智能、航空航天、国防武器装备电子系统小型化、模块化、智能化需求驱动下,系统级封装设计及关键工艺技术取得了革命性突破。新型的系统封装方法可把不同功能器件集成在一起,并实现了相互间高速通讯功能。封装工艺与晶圆制造工艺的全面融合,使封装可靠性、封装效率得到极大的提升,封装寄生效应得到有效抑制。文章概述了微系统封装结构及类型,阐述了高可靠晶圆级芯片封装(WLP)、倒装焊封装(BGA)、系统级封装(SIP)、三维叠层封装、TSV通孔结构的实现原理、关键工艺技术及发展趋势。     

快速热退火在Si中引入缺陷的研究(英文)

The deep-level defects are introduced into n-type silicon by rapid thermal annealing (RTA). The kinds of the defects and thier densities vary with rapid annealing temperature. The minority carrier lifetime is reduced rapidly due to these defects. There are two kinds of the defects: one is related to the metal impurity frozen into the crystal lattice defect: which can be removed by subsequent annealing near 650℃, the other is related to the intrinsic defect of the crystal, which remains after subsequent annealing. Our results show that latter is associated with dislocation.