The Design of Interdigitated Couplers for MIC Applications

A straightforward design procedure for microstripline interdigitated directional couplers is outlined. Based on exact, closed-form equations for coupler analysis, a design chart is developed allowing the geometry of the cross section to be found, starting from a prescribed coupling and given bounds on directivity and VSWR. A further chart yields the length of the coupled section once the center-band frequency has been fixed. In this way, a complete picture of coupler performance is made available to the designer so that the necessary tradeoffs between coupling, directivity, and impedance match can be predicted and understood. The accuracy of the design procedure is also discussed in relation with the most important parasitic affecting coupler behavior, such as launching-discontinuity effects and bonding-wire reactances.     

Ultra-Broad-Band GaAs Monolithic Amplifier

GaAs monolithic IC design and fabrication techniques suitable for baseband pulse amplification have been developed. The developed GaAs monolithic amplifier has a two-stage construction using two source-grounded FET's. To reduce input VSWR without serious noise-figure degradation, an inter-gate-drain negative feedback circuit was adopted. An interstage circuit is a dc-coupled circuit consisting of an appropriate impedance transmission line. Gate voltage for the second-stage FET is self-biased. The amplifier has 13.5-dB gain over the 3-dB bandwidth from below 500 MHz to 2.8 GHz. Less than 6-dB (7-dB) noise figure was obtained from 700 MHz to 2.2 GHz (150 MHz to 3 GHz). Input VSWR is less than 1.5     

Monolithic GaAs interdigitated couplers

This paper described the design, fabrication, and performance of two monolithic GaAs C-band 90° interdigitated couplers with 50- and 25-ω impedances, respectively. A comparison of the performance of these two couplers show that the 25-ω coupler has the advantages of lower loss and higer fabrication yield. the balanced amplifier configuration using 25-ω couplers will require a fewer member of elements in the input-output matching circuit of the FET amplifier. The fewer number of matching elements results in great savings in the GaAs real estate for microwave monolithic integrated circuits (MIMIC's). Both the couplers have been fabricated on a 0.1-mm-thick GaAs SI substrate. The measured results agree quite well with calculated results. The losses of the 50- and 25-ω couplers are 0.5 and 0.3 dB, respectively, over the 4-8-GHz frequency band.     

Monolithic GaAs direct-coupled amplifiers

Monolithic GaAs dc-coupled amplifiers with bandwidths up to 5 GHz are described. The multistage amplifiers include designs having 25-dB gain with 2-GHz bandwidth and 10-dB gain with 5-GHz bandwidth. Analysis of gain, bandwidth, and noise agrees with measurements. Distortion mechanisms are discussed, along with the performance of a low-distortion amplifier.     

GaAs单片集成宽带衰减器

介绍GaAs单片集成衰减器的研究与制作。所研制的衰减器在DC—10GHz的频率范围内，插入损耗小于1．5dB，衰减量大于15dB，驻波小于2．0：1；其中在DC—6GHz的频率范围内，衰减量大于25dB．驻波小于1．5：1，衰减波纹小于0．5dB。     

Monolithic GaAs travelling-wave amplifier

A monolithic GaAs travelling-wave amplifier with distributed input and output lines is described, and its experimental performance in the 0.5?14 GHz range is reported.     

Ku波段GaAs单片接收机

报道了工作频率分别为10.7-11．6GHz和11．7－12．2GHzGaAs单片接收机的研制结果。接收机并包括四种电路，即低噪声效大器、介质稳频振荡器、混频器和中频放大器。电路均采用GaAs全离子注入平面工艺创作，并封装在金属管壳内测试．10．7－11．6GHz接收机的噪声系数达到3．5dB，增益大于35dB；11．7－12.2GHz接收机的噪声系数可达到4dB，增益大于31dB。     

Ka频段GaAs单片平衡混频器

Ｋａ频段ＧａＡｓ单片平衡混频器江关辉，孙柏根，高葆薪，孙迎新，戴沛然（南京电子器件研究所，２１００１６）（清华大学电子工程系，北京，１０００８４）Ｋａ－ＢａｎｄＭｏｎｏｌｉｔｈｉｃＧａＡｓＢａｌａｎｃｅｄＭｉｘｅｒ￥ＪｉａｎｇＧｕａｎｈｕｉ；ＳｕｎＢ...     

Ku波段GaAs单片功率放大器

基于GaAs PHEMT在微波领域的卓越性能,设计并实现了两款Ku波段GaAs单片功率放大器。简述了GaAs PHEMT器件的工作原理,并抽取了精准的EEHEMT模型,通过独特的设计方法并结合相应的仿真软件设计了两款Ku波段单片功率放大器。经过精准测试,两款电路呈现的性能如下:在13～14GHz频带内,其中第一款电路的饱和输出功率Po>38dBm(脉宽100μs,占空比10%),功率增益GP>20dB,典型功率附加效率PAE>28%;第二款电路的饱和输出功率Po>40dBm(脉宽100μs,占空比10%),功率增益GP>19dB,典型功率附加效率PAE>28%。结果表明,基于PHEMT的GaAs单片功率放大器在Ku波段可以实现优良的性能。     

Ka-Band Monolithic GaAs Balanced Mixers

Monolithic integrated circuits have been developed on semi-insulating GaAs substrates for millimeter-wave balanced mixers. The GaAs chip is used as a suspended stripline in a cross-bar mixer circuit. A double sideband noise figure of 4.5 dB has been achieved with a monolithic GaAs balanced mixer filter chip over a 30- to 32-GHz frequency range. A monolithic GaAs balanced mixer chip has also been optimized and combined with a hybrid MIC IF preamplifier in a planar package with significant improvement in RF bandwidth and reduction in chip size. A double sideband noise figure of less than 6 dB has been achieved over a 31- to 39-GHz frequency range with a GaAs chip size of only 0.5x0.43 in. This includes the contribution of a 1.5-dB noise figure due to if preamplifier (5-500 MHz).     

Monolithic dual-gate GaAs FET amplifier

This paper presents the design, fabrication, and performance of a broad-band monolithic dual-gate GaAs FET amplifier. The amplifier has a gain of 3.5-5 dB over the 4.5- to 8-GHz band.     

C波段GaAs单片有源环行器

Ｃ波段ＧａＡｓ单片有源环行器岑元飞，林金庭，陈克金，樊晓龙（南京电子器件研究所，２１００１６）ＡＣ－ＢａｎｄＧａＡｓＭｏｎｏｌｉｔｈｉｃＡｃｔｉｖｅＣｉｒｃｕｌａｔｏｒ￥ＣｅｎＹｕａｎｆｅｉ；ＬｉｎＪｉｎｔｉｎｇ；ＣｈｅｎＫｅｊｉｎ；ＦａｎＸｉａｏｌ...     

X波段GaAs单片中功率放大器

本文叙述了GaAs单片功率放大器的设计方法,给出了初步的实验结果.采用集总元件、制作在1×1.2mm芯片上的单级放大器,在1dB带宽340(8100～8440)MHz的频率内,最大小信号增益为6.5dB,5.2dB下的输出功率为100mW.     

Design of Interdigitated Capacitors and Their Application to Gallium Arsenide Monolithic Filters

Theoretical expressions for the interelectrode capacitance and conductor losses for an array of microstrip transmission lines are presented. The effect of finite conductor thickness is included in the analysis by introducing equations for the effective width of the transmission lines. Good agreement between theory and experiment is observed up to 18 GHz. Experimental results obtained from a lumped-element GaAs monolithic bandpass filter are in excellent agreement with theory. The filter has 1.5-dB insertion loss at 11.95 GHz and greater than 22-dB loss in the stopband. The filter measures 0.58x 1.3x0.203 mm.     

Monolithic GaAs Lange coupler at X-band

Monolithic 3-dB Lange couplers have been fabricated on semi-insulating GaAs. Loss at the center frequency of 9.5 GHz is 0.7 dB.     

GaAs单片电路封装

简述了微波在封装中的传输特性，以及不同封装型式和材料的ＧａＡｓＭＭＩＣ封装，介绍了多层共烧陶瓷在ＭＭＩＣ封装中的应用。最后，综述了国外ＧａＡｓＭＭＩＣ的最新封装与互连技术。     

12GHz GaAs单片混频器

分析研究了一种新型１２ＧＨｚＧａＡｓＭＥＳＦＥＴ单片混频器，这种混频器采用级联ＦＥＴ作为混频元件。射频（ＲＦ）和本振（ＬＯ）信号分别通过各自的匹配网络进入混频电路，在中频输出端用中频缓冲放大器代替通常的中频匹配电路。电路在厚０．２ｍｍ，面积１．５ｍｍ×１．２ｍｍ的ＧａＡｓ基片上实现。设计的ＭＭＩＣ混频器在本振１１ＧＨｚ，射频１１．７～１２．２ＧＨＺ频率范围内的最大变频增益１．８ｄＢ。这一结果使进一步研究单片微波接收机成为可能。     

无耗GaAs MESFET单片混频器

报道了一种无耗ＧａＡｓＭＥＳＦＥＴ单片混频器的优化设计过程，实验与计算结果吻合较好。射频频率为１１～１１．５ＧＨＺ时，变频损耗小于２．５ｄＢ。     

Monolithic GaAs MESFET power sensor microsystem

The authors present the principle, technology and properties of a novel power sensor microsystem designed for very precise power measurement in a broad frequency range. Bulk micromachining technology on GaAs was implemented to obtain the desired parameters of the sensor     

Ku波段GaAs微波单片集成电路

本文介绍Ku波段GaAs单片集成电路的设计、研制和测量结果。该单片电路的匹配网络采用对FET进行计算机分析和电路模拟相结合的方法进行设计。研制成功了一个两级单片电路,其尺寸为1.9×3.2×0.1mm,在14.5～15.4GHz的频率范围内,输出功率P_0≥100mW,增益G_P≥5dB,带内增益起伏△G_P≤±0.75dB。