基于人类视觉系统的宏块级自适应频率加权算法

为提高视频编码主观质量,满足人类视觉特性,降低编码比特率,提出一种基于人类视觉系统的宏块级自适应频率加权算法。该算法利用人类视觉系统频率敏感性、视频图像内容特征和人眼对不同视频内容敏感度不同特性,定义了三种频率加权策略,并根据相邻宏块划分方式和预测模式为不同宏块选择不同的加权策略,实现了逐宏块更新量化矩阵。实验结果表明,本文算法在不引入更多计算复杂度的同时,较大程度提高了视频主观质量;与无频率加权算法相比,在相同主观质量下,降低约11%的编码比特数。      

H.263活动图像编码器码率控制研究

本文分别在图像层和宏块层进行 Ｈ２６３ 的码率控制。在图像层采用后向自适应控制的方法,通过引入量化步长因子—编码输出比特数映射表,确定每帧图像量化步长因子的基准值。在宏块层采用前向控制的方法,根据视觉掩蔽特性设计模糊分类器,确定人眼对每个宏块的敏感程度和相应的量化步长因子。能在视频输出码率恒定的条件下,保持图像质量的稳定,取得较好的视觉效果。     

基于感知模型的自适应码率控制算法

提出了一种基于人眼视觉系统(HVS)的感知模型,将反映视觉感知系统某部分特征的宏观描述统一到一个整体的数学模型中.特别是将人眼对于运动信息的感知特性与其他感知特性相融合.利用时空掩盖效应计算视频帧的复杂度与宏块的感知度.而自适应码率控制算法将根据帧复杂度分配给帧一个适当的比特数;根据宏块的感知度,将感知度低的区域的比特数转移到感知度高区域.新算法可以用更少的比特数获得更佳的主观视觉质量.     

MPEG-2视频编码流的码率变换技术的研究

比较分析了两种视频编码流的码率变换器结构的性能,提出了一种在图像内按宏块的复杂度分配目标码字,并直接控制交流ＤＣＴ系数编码比特数的码率控制算法。计算机模拟实验结果表明：由于ＭＰＥＧ－２标准中半像素精度运动补偿的非线性,单环结构的信噪比性能比起双环结构低大约０．１ｄＢ;本文提出的码率控制算法优于ＴＭ５的码率控制算法。     

基于基本单元相关性的新型码率控制算法

在帧层和宏块层提出一种改进的码率控制算法.在帧层利用编码比特与目标比特的差值对下一帧目标比特进行调整,在宏块层利用宏块相关性提出了一种新型平均绝对差值(MAD)预测策略--大小三角形法预测宏块MAD.实验结果表明,改进算法不仅码率的控制更加精确.而且图像的视觉质量也得到提高.     

立体视频右视点图像宏块丢失错误隐藏算法

根据宏块的运动特性,提出了一种立体视频右视 点图像宏块丢失的错误隐藏算法。根 据视点内时域相邻帧及 视点间相邻帧的相关性估计丢失宏块的运动静止特性,将丢失宏块分为运动块和静止块。对 于静止块,直接使用时 域帧拷贝的方法恢复;对于运动块,使用外边界匹配准则选择候选块并赋予相应的权重得到 加权候选块,根据最优 候选块和加权候选块的边界匹配值自适应地选择最优块或空域插值方法恢复丢失信息。实验 表明,本文算法提高了 隐藏图像的主客观质量。在不同量化参数(QP)和不同宏块丢包率(PLR) 的情况下,经本文算 法恢复后图像的峰值信噪比(PSNR)与普通JM算法相比,平均提高0. 77～3.22dB。     

MPGE—2视频编码流的码率变换技术的研究

比较了分析两种视频编码流的码率变换器结构的性能,提出了一种在图像内按宏块的复杂度分配目标码字,并直接控制交流ＤＣＴ系统编码比特数的码率控制算法。本文提出的码率控制算法优于ＴＭ５的码率控制算法。     

基于率失真理论的视频编码码率控制

本文以率失真理论为基础，提出了一种新的前向视频编码码率控制策略ＦＲＣ，其核心思想是：宏块目标比特数的预分配除受码率的限制外，更重要的是受到图像的局部空间活动性等因素的控制，从而达到一种最优的比特分配方案。主观测试实验结果表明，这种新的码率控制策略大大地改善了重建图像的质量。     

MPEG—2视频编码算法的几点改进

在ＭＰＥＧ—２ＴＭＳ［１］的基础上，本文提出如下几项改进：１）根据视觉特性，引入亮度掩盖算子修正ＴＭ５的自适应量化级计算方法，节省了码字而不影响主观质量。２）为了均匀分配亮度掩盖节省的码字，以当前Ｐ、Ｂ帧中具有较大均方差值的帧内量化宏块为编码难度的测度在编码过程中自适应地调整预置的帧码字数。这一措施也是处理场景切换的一种可行方式。３）在运动估值中综合考虑ＭＡＤ值和运动矢量编码占用比特，进一步提高编码效率，并使运动矢量场的一致性有所改善。计算机模拟实验结果表明，采用本文方法，平均视频解码信噪比提高了０．３ｄＢ以上。由于在视觉敏感区平均量化级有明显下降，图像的主观质量得到改善。     

基于R—Q、D—Q模型的宏块量化因子选择

实现基于标准视频编码过程的一个关键问题是宏块编码模式选择,而选择宏块编码模式控制参量的关键是确定ＤＣＴ系数的量化因子。本文提出了一种基于宏块分类的最佳量化因子选择方法,着重讨论了二个问题：（１）宏块的Ｒ—Ｑ模型和Ｄ—Ｑ模型;（２）引人适当先验假设条件,根据宏块Ｒ—Ｑ、Ｄ—Ｑ模型,建立有限制条件的最优化表达式,得到最佳的分类宏块量化因子。模拟结果表明：与传统方法相比,基于宏块分类的最佳量化因子选择方法一定程度上能减少所需的编码比特。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.