Structural and dielectric properties of Bi2Zn2/3Nb4/3O7 thin films prepared by pulsed laser deposition at low temperature for embedded capacitor applications

Bi₂Zn_2/3Nb_4/3O₇ thin films were deposited on Pt/TiO₂/SiO₂/Si(1 0 0) substrates at a room temperature under the oxygen pressure of 1-10 Pa by pulsed laser deposition. Bi₂Zn_2/3Nb_4/3O₇ thin films were then post-annealed below 200 °C in a rapid thermal process furnace in air for 20 min. The dielectric and leakage current properties of Bi₂Zn_2/3Nb_4/3O₇ thin films are strongly influenced by the oxygen pressure during deposition and the post-annealing temperature. Bi₂Zn_2/3Nb_4/3O₇ thin films deposited under 1 Pa oxygen pressure and then post-annealed at a temperature of 150 °C show uniform surface morphologies. Dielectric constant and loss tangent are 57 and 0.005 at 10 kHz, respectively. The high resolution TEM image and the electron diffraction pattern show that nano crystallites exist in the amorphous thin film, which may be the origin of high dielectric constant in the Bi₂Zn_2/3Nb_4/3O₇ thin films deposited at low temperatures. Moreover, Bi₂Zn_2/3Nb_4/3O₇ thin film exhibits the excellent leakage current characteristics with a high breakdown strength and the leakage current density is approximately 1 × 10⁻⁷ A/cm² at an applied bias field of 300 kV/cm. Bi₂Zn_2/3Nb_4/3O₇ thin films are potential materials for embedded capacitor applications.     

Thermal conductivity of titanium dioxide films grown by metal-organic chemical vapor deposition

We studied the effect of the microstructures on the thermal conductivity of the titanium dioxide (TiO₂) films. TiO₂ films were grown by MOCVD, their morphologies were observed using a scanning electron microscope (SEM). The chemical composition was determined through Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA) measurements. The thermal conductivity of the in-plane direction was measured using an alternating current calorimetric method (laser-heating Angstrom method) in the temperature range of 300 to 470 K. The authors fabricated a TiO₂ film with extremely low thermal conductivity (~ 0.5 Wm^− 1 K^− 1), in which a feather-like texture is regularly arranged in the direction perpendicular to the heat flow. The origins of the extremely low thermal conductivity were studied from a microstructural viewpoint.     

Characterization of sol-gel synthesised lead-free (1 − x)Na0.5Bi0.5TiO3-xBaTiO3-based ceramics

The crystal structure, microstructure, dielectric and ferroelectric properties of (1 − x)Na_0.5Bi_0.5TiO₃-xBaTiO₃ ceramics with x = 0, 0.03, 0.05, 0.07 and 0.1 are investigated. A structural variation according to the system composition was investigated by X-ray diffraction (XRD) analyses. The results revealed that the synthesis temperature for pure perovskite phase powder prepared by the present sol-gel process is much lower (800 °C), and a rhombohedral-tetragonal morphotropic phase boundary (MPB) is found for x = 0.07 composition which showing the highest remanent polarization value and the smallest coercive field. The optimum dielectric and piezoelectric properties were found with the 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃ composition. The piezoelectric constant d₃₃ is 120 pC/N and good polarization behaviour was observed with remanent polarization (P_r) of 12.18 pC/cm², coercive field (E_c) of 2.11 kV/mm, and enhanced dielectric properties ?_r > 1500 at room temperature. The 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃-based ceramic is a promising lead-free piezoelectric candidate for applications in different devices.     

Structural and mechanical properties of nanostructured TiO2 thin films deposited by RF sputtering

This study mainly aims to evaluate the effects of substrate temperatures on the mechanical properties of TiO₂ thin films deposited on glass substrates by radio-frequency (RF) magnetron sputtering. All titania films possess anatase structure having a nodular morphology. AES results reveal that Si and Na ions from glass diffuse into TiO₂ films at higher substrate temperatures. Micro-scratch and wear tests were conducted to evaluate their mechanical and tribological properties. The adhesion critical loads of TiO₂ films deposited at room temperature, 200 and 300 °C are found to be 1.51, 1.54 and 1.08 N, respectively. Scratch hardness also increases from 11.5 to 13.6 GPa with increasing temperature. The wear track width decreases with substrate temperature indicating an improved wear resistance at higher temperatures.     

Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

Magnesium stannide (Mg₂Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 × 10⁻³ W K⁻² m⁻¹ for stoichiometric Mg₂Sn thin films doped with ∼1 at.% Ag.     

Low temperature growth of nanocrystalline TiO2 films with Ar/O2 low-field helicon plasma

TiO₂ thin films were deposited on silicon wafer substrates by low-field (1 < B < 5 mT) helicon plasma assisted reactive sputtering in a mixture of pure argon and oxygen. The influence of the positive ion density on the substrate and the post-annealing treatment on the films density, refractive index, chemical composition and crystalline structure was analysed by reflectometry, Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD). Amorphous TiO₂ was obtained for ion density on the substrate below 7 × 10¹⁶ m^− 3. Increasing the ion density over 7 × 10¹⁶ m^− 3 led to the formation of nanocrystalline (~ 15 nm) rutile phase TiO₂. The post-annealing treatment of the films in air at 300 °C induced the complete crystallisation of the amorphous films to nanocrystals of anatase (~ 40 nm) while the rutile films shows no significant change meaning that they were already fully crystallised by the plasma process. All these results show an efficient process by low-field helicon plasma sputtering process to fabricate stoichiometric TiO₂ thin films with amorphous or nanocrystalline rutile structure directly from low temperature plasma processing conditions and nanocrystalline anatase structure with a moderate annealing treatment.     

Dielectric properties of low-temperature sintered Ba0.6Sr0.4TiO3 thick films prepared by reactive sintering method

Screen printed Ba_0.6Sr_0.4TiO₃ (BST6/4) thick films were fabricated by reactive sintering at a low temperature below 900 °C. The dielectric properties in radio frequency range were measured on samples of sandwich structure MIM capacitors by impedance analyzer, while that in microwave frequency range were measured on samples of thick films without top and bottom electrodes by split-post dielectric resonator method. The thick films exhibited a low permittivity, while at the same time, maintained a high tunability. The permittivity and dielectric loss at 1 MHz were 228.8 and 0.007, respectively. The corresponding values measured at 9.9 GHz were 82.24 and 0.109, respectively. The tunability was as high as 72.4% (150 kV/cm, 10 kHz). This method provides a simple and effective route to obtain thick films with great potential in applications in Low Temperature Co-fired Ceramic (LTCC) and microwave tunable devices.     

Preparation of large scale photocatalytic TiO2 films by the sol-gel process

Nanocrystalline titanium dioxide films were formed on frosted and clear borosilicate glass with a large surface area (12 × 22 cm) using doctor blade and spray coating techniques. The films were subjected to a high temperature treatment at 550 °C. X-ray diffraction (XRD) analysis indicated that the TiO₂ films contain only the anatase phase. Optical microscopy was used to determine the morphology changes after the deposition of each layer. Scanning electron microscopy (SEM) was used to study the films surface morphology. The large scale TiO₂ films produced showed a high photocatalytic activity which was evaluated by the degradation of methyl orange (MO) in aqueous solution (10 mg L^− 1) under illumination of a UV light source with an overall irradiance of 0.9 mW cm^− 2. UV-visible spectrophotometry was used to monitor the degradation of MO through the decrease of the main absorbance peak at 464 nm. The results demonstrated that a complete decomposition of MO could be achieved after 2 h of UV irradiation.     

Photogenerated cathodic protection of flower-like, nanostructured, N-doped TiO2 film on stainless steel

Flower-like, nanostructured, N-doped TiO₂ (N-TiO₂) films were fabricated using a low-temperature hydrothermal method. The morphology, crystalline phase, and composition of these flower-like nanostructured films were characterized systematically by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and UV-vis spectroscopy. The photoelectrochemical properties of N-TiO₂ films in 0.5 M NaCl solution were evaluated under illumination and in the dark through electrochemical measurements. Flower-like nanostructured TiO₂ films exhibited a drastically enhanced photocurrent in the UV light region and a notable absorption in the visible light region (600-700 nm). The negative shifts of the electrode potentials of 316L stainless steel coupled with N-doped TiO₂ photoanodes are 470 and 180 mV under UV and visible light irradiation, respectively. The flower-like, nanostructured, N-doped TiO₂ films were able to function effectively as photogenerated cathodic protection for metals under UV and visible light illumination. Such photogenerated cathodic protection could last a period of 5.5 h even in darkness.     

High transmittance and superhydrophilicity of porous TiO2/SiO2 bi-layer films without UV irradiation

In order to obtain the TiO₂ films with high transmittance and superhydrophilicity without UV irradiation, porous TiO₂/SiO₂ bi-layer films were prepared by spin coated SiO₂ sol and TiO₂ sol including polyethylene glycol 2000 (PEG 2000) onto glass and subsequent calcination at 550 °C. Meanwhile, factors that affect the TiO₂/SiO₂ bi-layer films transmittance and superhydrophilicity were investigated in details by observing their surface morphologies and measuring their water contact angles (WCAs), spreading time and transmittances. The results indicated that the as-prepared TiO₂/SiO₂ bi-layer film showed superhydrophilicity without UV irradiation when 0.5 wt.% PEG 2000 was added in TiO₂ sol. At the same time, its maximum transmittance was as high as 92.3%. The spreading time was only about 0.16 s. More importantly, the resultant film had an excellent stability of the superhydrophilic property.     

Perpendicular magnetic anisotropy in 70 nm CoFe2O4 thin films fabricated on SiO2/Si(1 0 0) by the sol-gel method

Cobalt ferrite CoFe₂O₄ films were fabricated on SiO₂/Si(1 0 0) by the sol-gel method. Films crystallized at/above 600 °C are stoichiometric as expected. With increase of the annealing temperature from 600 °C to 750 °C, the columnar grain size of CoFe₂O₄ film increases from 13 nm to 50 nm, resulting in surface roughness increasing from 0.46 nm to 2.55 nm. Magnetic hysteresis loops in both in-plane and out-of-plane directions, at different annealing temperatures, indicate that the films annealed at 750 °C exhibit obvious perpendicular magnetic anisotropy. Simultaneously, with the annealing temperature increasing from 600 °C to 750 °C, the out of plane coercivity increases from 1 kOe to 2.4 kOe and the corresponding saturation magnetization increases from 200 emu/cm³ to 283 emu/cm³. In addition, all crystallized films exhibit cluster-like structured magnetic domains.     

Microstructure characterization and photocatalytic activity of mesoporous TiO2 films with ultrafine anatase nanocrystallites

A series of mesoporous TiO₂ films on borosilicate glass with ultrafine anatase nanocrystallites were successfully synthesized using a non-acidic sol gel preparation route, which involves the use of nonionic surfactant Tween 20 as template through a self assembly pathway. The microstructure of these TiO₂ films was characterized by XRD, SEM, HR-TEM, UV-Vis spectroscopy, and N₂ adsorption-desorption isotherm analysis. Their photocatalytic activities were investigated by using creatinine as a model organic contaminate in water. It was found that all mesoporous TiO₂ films prepared with Tween 20 exhibited a partially ordered mesoporous structure. The photocatalytic activity of the TiO₂ films could be remarkably improved by increasing Tween 20 loading in the sol at the range of 50% (v/v), which yielded large amount of catalyst (anatase) on the glass support and enhanced specific surface area. The optimum Tween 20 loading was 50% (v/v) in the sol, above which good adhesion between TiO₂ films and borosilicate glass could not be maintained. The final TiO₂ film (Tween 20: final sol = 50%,v/v) exhibits high BET surface area (∼ 120 m²/g) and pore volume (0.1554 cm³/g), ultrafine anatase nanocrystallinity (7 nm), uniform and crack free surface morphology, and improved photocatalytic activity.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Gas sensing properties of layer-by-layer self-assembled ultrathin film of polyaniline/titanium dioxide

Electrostatic layer-by-layer (LbL) self-assembly (SA) was realized with processable polyaniline prepared with polystyrene sulfonic acid as a template (PANI-PSSA) and titanium dioxide sol as the starting materials, resulting in an ultrathin film of PANI-PSSA/TiO₂. The SA process was confirmed by UV–vis spectra and quartz crystal microbalance measurements. The composite ultrathin film was characterized by X-ray photoelectron spectroscopy, X-ray diffraction patterns, field-emission scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. It was revealed that the content of TiO₂ in the composite film was much higher than that of PANI-PSSA, and the doping level of PANI-PSSA was as high as 19.1%. Gas sensors were fabricated by depositing self-assembled ultrathin film of PANI-PSSA/TiO₂ on interdigital gold electrodes, then covering another layer of PANI-PSSA via dip-coating. Electrical response to NH₃ of the sensor was investigated at room temperature. Gas sensitivity of the sensor was found to closely relate to the number of self-assembled bilayers. Under optimal conditions, the sensor displayed high sensitivity (26.5% and 81.2% towards NH₃ of 10 and 100 ppm, respectively), fast response (response time ∼ 1 min; recovery time ∼ 2 min), good reversibility and repeatability.     

Microwave dielectric properties of (1 − x)ZnMoO4-xTiO2 composite ceramics

(1 − x)ZnMoO₄-xTiO₂ (x = 0.0, 0.05, 0.158, 0.25, and 0.35) composite ceramics were synthesized by the conventional solid state reaction process. The sintering behavior, phase composition, chemical compatibility with silver, and microwave dielectric properties were investigated. All the specimens can be well densified below 950 °C. From the X-ray diffraction analysis, it indicates that the triclinic wolframite ZnMoO₄ phase coexists with the tetragonal rutile TiO₂ phase, and it is easy for silver to react with ZnMoO₄ to form Ag₂Zn₂(MoO₄)₃ phase and hard to react with TiO₂. When the volume fraction of TiO₂ (x value) increasing from 0 to 0.35, the microwave dielectric permittivity of the (1 − x)ZnMoO₄-xTiO₂ composite ceramics increases from 8.0 to 25.2, the Q_f value changes in the range of 32,300-43,300 GHz, and the temperature coefficient τ_f value varies from −128.9 to 157.4 ppm/°C. At x = 0.158, the mixture exhibits good microwave dielectric properties with a ?_r = 13.9, a Q_f = 40,400 GHz, and a τ_f = +2.0 ppm/°C.     

CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

CuIn_1−xAl_xS₂ thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu-In-Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS₂ to {a = 5.30 Å, c = 10.36 Å} for CuAlS₂. No unwanted phases such as Cu_2−xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A₁ phonon frequency varied nonlinearly from 294 cm⁻¹ (CuInS₂) to 314 cm⁻¹ (CuAlS₂).     

Sputter deposition and computational study of M-TiO2 (M = Nb, Ta) transparent conducting oxide films

Titanium dioxide (TiO₂) of the anatase phase has recently attracted much attention as a novel transparent conducting oxide (TCO) due to its rich availability, high refractive index with low absorption in the solar spectrum. While it has been found that Nb is a dopant to obtain low resistivity (~ 10^− 4 Ωcm), other metals such as Ta, W etc., are also considered as potential effective dopants. In this paper, we carried out a parallel study on Nb- and Ta-doped TiO₂ anatase films both theoretically by first principles calculation and experimentally by sputtering deposition and optical/electrical characterizations. The Nb-TiO₂ films deposited on glass by co-sputtering at room temperature were amorphous, and the films crystallized into an anatase structure after vacuum-annealing, with the measured resistivity values comparative to the reported. The Ta-TiO₂ films were deposited similarly, and the structure and properties were compared with the Nb-doped ones. Results showed that better performance was found in Nb-TiO₂ films than that in Ta-TiO₂ films. Theoretical calculations indicate that the larger lattice distortion by substitution of Ta for Ti is the dominating factor to suppress crystal growth and weaken the ability of electron mobility.     

Oxidation behaviour of Ti-46.7Al-1.9W-0.5Si in air and Ar-20%O2 between 750 and 950 °C

The oxidation behaviour of an intermetallic alloy, Ti-46.7Al-1.9W-0.5Si, was studied in air and Ar-20%O₂ atmospheres at 750, 850 and 950 °C. Oxidation of the alloy followed a parabolic rate law at low temperature (750 °C) in both environments. The alloy oxidised parabolically in air and at a slower rate in Ar-20%O₂ at 850 °C. Following a parabolic oxidation for a relatively short exposure period (72 h) at 950 °C, the oxidation rate was reduced after prolonged exposure (up to 240 h) in air. The alloy oxidised in a slower manner in the Ar-20%O₂ atmosphere at 950 °C. Higher oxidation rates were observed in air than in Ar-20%O₂ at all three experimental temperatures. Multi-layered scales developed in both environments. The scale formed in air consisted of TiO₂/Al₂O₃/TiO₂/TiN/TiAl₂ layers, ranging from the surface to the substrate—whilst the scale developed in the Ar-20%O₂ atmosphere comprised of the sequence TiO₂/Al₂O₃/TiO₂/Al₂O₃/Ti₃Al/substrate. The two layers of Al₂O₃ in Ar-20%O₂ were more effective in providing protection of the substrate against high temperature corrosion than the single layer of Al₂O₃ formed in air.     

Effect of peak power in reactive high power impulse magnetron sputtering of titanium dioxide

The effect of peak power in a high power impulse magnetron sputtering (HiPIMS) reactive deposition of TiO₂ films has been studied with respect to the deposition rate and coating properties. With increasing peak power not only the ionization of the sputtered material increases but also their energy. In order to correlate the variation in the ion energy distributions with the film properties, the phase composition, density and optical properties of the films grown with different HiPIMS-parameters have been investigated and compared to a film grown using direct current magnetron sputtering (DCMS). All experiments were performed for constant average power and pulse on time (100 W and 35 μs, respectively), different peak powers were achieved by varying the frequency of pulsing. Ion energy distributions for Ti and O and its dependence on the process conditions have been studied. It was found that films with the highest density and highest refractive index were grown under moderate HiPIMS conditions (moderate peak powers) resulting in only a small loss in mass-deposition rate compared to DCMS. It was further found that TiO₂ films with anatase and rutile phases can be grown at room temperature without substrate heating and without post-deposition annealing.     

Effect of Na diffusion from glass substrate on the microstructural and photocatalytic properties of post-annealed TiO2 films synthesised by reactive sputtering

Amorphous columnar TiO₂ films were synthesised by reactive sputtering on cold soda–lime glass substrates (TiO₂/glass films). The films were subsequently heated in order to crystallise the photoactive anatase phase. The surface chemical composition assessment demonstrates the occurrence of metallic Na, the amount of which increases with the annealing temperature. The evolution of the structural, microstructural and photocatalytic properties of the films with the annealing temperature was investigated and compared to that of TiO₂ films deposited in same conditions, but on glass pre-coated with a SiN_x diffusion barrier (TiO₂/SiN_x/glass films). Once crystallised, both series of TiO₂ films exhibit [001] preferential orientation corresponding to the columnar growth. Grain coalescence associated to a modification of the grain shape is only observed in TiO₂/glass films for annealing temperatures higher than 450 °C, whereas neither microstructural nor structural change is observed in TiO₂/SiN_x/glass films. The Na-contaminated TiO₂ films exhibit different photocatalytic behaviour with the annealing temperature compared to the Na-free TiO₂ films. A discussion is finally based on these differences.