Effect of α to β (β') Phase Transition on the Sintering of Silicon Nitride Ceramics

By using α-Si₃N₄ and β-Si₃N₄ starting powders with similar particle size and distribution, the effect of α-β (β') phase transition on densification and microstructure is investigated during the liquid-phase sintering of 82Si₃N₄·9Al₂O₃·9Y₂O₃ (wt%) and 80Si₃N₄·13Al₂O₃·5AIN·5AIN·2Y₂O₃. When α-Si₃N₄ powder is used, the grains become elongated, apparently hindering the densification process. Hence, the phase transition does not enhance the densification.     

Hot-Pressing of Si3N4 with Y2O3 and Li2O as Additives

The rates of densification and phase transformation undergone by α-Si₃N₄ during hot-pressing in the presence of Y₂O₃, Y₂O₃−2SiO₂, and Li₂0−2Si0₂ as additives were studied. Although these systems behave less simply than MgO-doped Si₃N₄, the data can be interpreted during the early stages of hot-pressing as resulting from a solution-diffusion-reprecipitation mechanism, where the diffusion step is rate controlling and where the reprecipitation step invariably results in the formation of the β-Si₃N₄ phase.     

Bimodal Microstructure in Silicon Nitride–Barium Aluminum Silicate Ceramic-Matrix Composites by Pressureless Sintering

A distinct bimodal microstructure has been obtained in a Si₃N₄–BAS (barium aluminum silicate) ceramic-matrix composite by pressureless sintering. It is shown that the addition of coarse β-Si₃N₄ seeds causes abnormal grain growth in this composite, and hence encourages the formation of a bimodal microstructure. This abnormal grain growth is due to the nature of the heterogeneous nucleation mechanism in Si₃N₄α-to-β phase transformation, and is promoted by the transformation. After complete phase transformation, further abnormal grain growth is comparably slow and governed by the Ostwald ripening mechanism. Therefore, a stable bimodal microstructure can be easily achieved by pressureless sintering.     

Sintering Silicon Nitride Ceramics in Air

Silicon nitride (Si₃N₄) ceramics, prepared with Y₂O₃ and Al₂O₃ sintering additives, have been densified in air at temperatures of up to 1750°C using a conventional MoSi₂ element furnace. At the highest sintering temperatures, densities in excess of 98% of theoretical have been achieved for materials prepared with a combined sintering addition of 12 wt% Y₂O₃ and 3 wt% Al₂O₃. Densification is accompanied by a small weight gain (typically <1–2 wt%), because of limited passive oxidation of the sample. Complete α- to β-Si₃N₄ transformation can be achieved at temperatures above 1650°C, although a low volume fraction of Si₂N₂O is also observed to form below 1750°C. Partial crystallization of the residual grain-boundary glassy phase was also apparent, with β-Y₂Si₂O₇ being noted in the majority of samples. The microstructures of the sintered materials exhibited typical β-Si₃N₄ elongated grain morphologies, indicating potential for low-cost processing of in situ toughened Si₃N₄-based ceramics.     

Densification and Microstructural Development of Silicon Nitride–Silica During Hot Isostatic Pressing

The influence of SiO₂ addition on the densification and microstructural development of high-purity Si₃N₄ during hot isostatic pressing (HIP) was studied. During HIP, densification was promoted, but the phase transformation from α -Si₃N₄ to β -Si₃N₄ was impeded by SiO₂. Analysis using a simple model shows that the enhanced densification was mainly due to the viscous flow of SiO₂. The microstructure changed remarkably at between 10 and 20 wt% SiO₂ additions. Analysis of the phase transformation kinetics suggests that the diffusion of Si₃N₄ through SiO₂ glass is the ratecontrolling step for the transformation.     

Pulsed Electric Current Sintering of Silicon Nitride

Pulsed electric current sintering (PECS) has been used to densify α-Si₃N₄ powder doped with oxide additives of Y₂O₃ and Al₂O₃. A full density (>99%) was achieved with virtually no transformation to β-phase, resulting in a microstructure with fine equiaxed grains. With further holding at the sintering temperature, the α-to-β phase transformation took place, concurrent with an exaggerated grain growth of a limited number of elongated β-grains in a fine-grained matrix, leading to a distinct bimodal grain size distribution. The average grain size was found to obey a cubic growth law, indicating that the growth is diffusion-controlled. In contrast, the densification by hot pressing was accompanied by a significant degree of the phase transformation, and the subsequent grain growth gave a broad normal size distribution. The apparent activation energy for the phase transformation was as high as 1000 kJ/mol for PECS, almost twice the value for hot pressing (∼500 kJ/mol), thereby causing the retention of α-phase during the densification by PECS.     

Microstructural Development During Gas-Pressure Sintering of α-Silicon Nitride

Gas-pressure sintering of α-Si₃N₄ was carried out at 1850 ° to 2000°C in 980-kPa N₂. The diameters and aspect ratios of hexagonal grains in the sintered materials were measured on polished and etched surfaces. The materials have a bimodal distribution of grain diameters. The average aspect ratio in the materials from α-Si₃N₄ powder was similar to that in the materials from β-Si₃N₄ powder. The aspect ratio of large and elongated grains was larger than that of the average for all grains. The development of elongated grains was related to the formation of large nuclei during the α-to-β phase transformation. The fracture toughness of gaspressure-sintered materials was not related to the α content in the starting powder or the aspect ratio of the grains, but to the diameter of the large grains. Crack bridging was the main toughening mechanism in gas-pressure-sintered Si₃N₄ ceramics.     

Influence of Phase Formation on Dielectric Properties of Si3N4 Ceramics

The influence of phase formation on the dielectric properties of silicon nitride (Si₃N₄) ceramics, which were produced by pressureless sintering with additives in MgO–Al₂O₃–SiO₂ system, was investigated. It seems that the difference in the dielectric properties of Si₃N₄ ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si₃N₄, β-Si₃N₄, and the intermediate product (Si₂N₂O) in the samples. Compared with α-Si₃N₄ and Si₂N₂O, β-Si₃N₄ is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si₃N₄ could be attributed to the ionic relaxation polarization.     

Densification of Si3N4 with LiYO2 Additive

This paper deals with the densification and phase transformation during pressureless sintering of Si₃N₄ with LiYO₂ as the sintering additive. The dilatometric shrinkage data show that the first Li₂O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si₃N₄ to β-Si₃N₄ taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si₃N₄ to β-Si₃N₄ takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li₂O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li₂O−Y₂O₃ system can provide very effective low-temperature sintering additives for silicon nitride.     

Microstructural Observations on Hot-Pressed Si3N4

The development of microstructure in hot-pressed Si_aN₄ was studiehd for a typical Si₃N₄ powder with and without BeSiN₂ as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si₃N₄ conversion and specific surface area showed that BeSiN₂ appears to increase the mobility of the system by enhancing densification, α- to β-Si₃N₄ transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase.     

Solid-Liquid Equilibria in the System Si3N4-AlN-Si02-A12O3

Solid-liquid equilibria at 1750°C and subsolidus phase relations in the system Si₃N₄−AlN-SiO₂−Al₂O₃ were determined for the composition region bounded by the β-Si₃N₄ solid solution line and silica-alumina join X-ray diffraction and optical microscopy were used to determine the phases present in specimens cooled rapidly after equilibration. The extent of a single liquid-phase region and the tie lines for the βsolid solution + liquid field at 1750°C were established from quantitative X-ray diffractometry and lattice parameter measurements of βsolid solutions in equilibrium with liquid. The results were corroborated by optical microscopy and melting behavior observations. A new composition, Si₁₂Al₁₈O₃9N₈, is suggested for the x₁ phase. The lowest melting temperature in the system is ≅ 1480°C and the corresponding composition is 10 eq% Al-90 eq%O.     

The α–β Transformation in Silicon Nitride Single Crystals

Single crystals of α-Si₃N₄ were annealed at 2000°–2150°C. The β phase was detected after annealing at 2150°C only when the crystals were surrounded by MgO·3Al₂O₃ or Y₂O₃ powders. On the other hand, no evidence of the α–β transformation was found when the crystals were annealed without additives. The solution–precipitation mechanism was concluded to be the dominant factor in the α–β transformation of Si₃N₄.     

Dissolution Kinetics of β-Si3N4 in an Mg-Si-O-N Glass

The rate of dissolution of β-Si₃N₄ into an Mg-Si-O-N glass was measured by working with a composition in the ternary system Si₃N₄-SiO₂-MgO such that Si₂N₂O rather than β-Si₃N₄ was the equilibrium phase. Dissolution was driven by the chemical reaction Si₃N₄(c)+SiO₂( l )→Si₂N₂O(c). Analysis of the kinetic data, in view of the morphology of the dissolving phase (Si₃N₄) and the precipitating phase (Si₂N₂O), led to the conclusion that the dissolution rate was controlled by reaction at the crystal/glass interface of the Si₃N₄, crystals. The process appears to have a fairly constant activation energy, equal to 621 ±40 kJ-mol⁻¹, at T=1573 to 1723 K. This large activation energy is believed to reflect the sum of two quantities: the heat of solution of β-Si₃N₄ hi the glass and the activation enthalpy for jumps of the slower-moving species across the crystal/glass interface. The data reported should be useful for interpreting creep and densification experiments with MgO-fluxed Si₃N₄.     

Influence of Yttria–Alumina Content on Sintering Behavior and Microstructure of Silicon Nitride Ceramics

The present study investigates the influence of the content of Y₂O₃–Al₂O₃ sintering additive on the sintering behavior and microstructure of Si₃N₄ ceramics. The Y₂O₃:Al₂O₃ ratio was fixed at 5:2, and sintering was conducted at temperatures of 1300°–1900°C. Increased sintering-additive content enhanced densification via particle rearrangement; however, phase transformation and grain growth were unaffected by additive content. After phase transformation was almost complete, a substantial decrease in density was identified, which resulted from the impingement of rodlike β-Si₃N₄ grain growth. Phase transformation and grain growth were concluded to occur through a solution–reprecipitation mechanism that was controlled by the interfacial reaction.     

Hot-Pressing Behavior of Si3N4

The densification behavior of Si₃N₄ containing MgO was studied in detail. It was concluded that MgO forms a liquid phase (most likely a magnesium silicate). This liquid wets and allows atomic transfer of Si₃N₄. Evidence of a second-phase material between the Si₃N₄ grains was obtained through etching studies. Transformation of α- to β-Si₃N₄ during hot-pressing is not necessary for densification.     

Synthesis and Properties of Porous Single-Phase β'-SiAlON Ceramics

Single-phase β'-SiAlON (Si_{6− z} Al _z O _z N_{8− z} , z = 0–4.2) ceramics with porous structure have been prepared by pressureless sintering of powder mixtures of á-Si₃N₄, AlN, and Al₂O₃ of the SiAlON compositions. A solution of AlN and Al₂O₃ into Si₃N₄ resulted in the β'-SiAlON, and full densification was prohibited because no other sintering additives were used. Relative densities ranging from 50%–90% were adjusted with the z -value and sintering temperature. The results of X-ray diffraction, scanning electron microscopy, and transmission electron microscopy analyses indicated that single-phase β'-SiAlON free from a grain boundary glassy phase could be obtained. Both grain and pore sizes increased with increasing z -value. Low z -value resulted in a relatively high flexural strength.     

Ionic Conductivity of the System Si-Al-O-N from 850° to 1400°C

Electrical conductivity was measured from 850° to 1400°C for β-sialon and pure X phase as well as for the sintered system Si₃N₄-Al₂O₃, containing β-sialon, X phase, β-Si₃N₄, and glassy phase. Ionic conductivity was measured at >1000°C. The charge carriers were identified by electrolysis. The results showed that pure β-sialon is ionically conducting because of Si⁴⁺ migration for the temperature range studied. Pure X phase shows ionic conduction by Si⁴⁺ above 1000°; below 1000°C, it shows electronic conduction because of impurities. The conductivity of the sintered system Si₃N₄-Al₂O₃ containing β-sialon, β-Si₃N₄ X phase, and glassy phase changes as the relative quantities of β -sialon and X phase change. The apparent activation energies for the ionic and electronic conductivities are 45 and 20 kcal/mol, respectively.     

Impurity Phases in Hot-Pressed Si3N4

Impurity phases in commercial hot-pressed Si₃N₄ were investigated using transmission electron microscopy. In addition to the dominant, β-Si₃N₄ phase, small amounts of Si₂N₂O, SiC, and WC were found. Significantly, a continuous grain-boundary phase was observed in the ∼ 25 high-angle boundaries examined. This film is ∼ 10 Å thick between, β-Si₃N₄ grains and ∼ 30 Å thick between Si₂N₂O and β-Si₃N₄ grains.     

Highly Texturing β-Sialon Via Strong Magnetic Field Alignment

This paper reports the texturing behavior of β-sialon by strong magnetic field alignment (SMFA) during slip casting, followed by reaction pressureless sintering, using either α or β-Si₃N₄, Al₂O₃, and AlN as the starting materials. It is found that the β-Si₃N₄ crystal exhibits a substantially stronger orientation ability than the α-Si₃N₄ crystal regardless of the Si₃N₄ raw powders in the magnetic field of 12 T. The β-raw powder produces a highly a , b -axis-oriented β-Si₃N₄ green body with a Lotgering orientation factor of up to 0.97. During sintering, the β-raw powder allows the a , b -axis-oriented β-sialon to retain the Lotgering orientation factor similar to and even higher than that of β-Si₃N₄ in the green body. In contrast, the α-raw powder leads to a faster transformation rate of α/β-Si₃N₄ to β-sialon but a substantially lower texture in β-sialon. The results indicate that the use of the β-raw powder is more efficient for producing highly textured β-sialon via SMFA than that of the α-raw powder as well as the prolonged sintering.     

Formation of α-Si3N4 Solid Solutions in the System Si3N4-A1N-Y2O3

The subsolidus phase diagram of the quasiternary system Si₃N₄-AlN-Y₂O₃ was established. In this system α-Si₃N₄ forms a solid solution with 0.1Y₂O₃: 0.9 AIN. The solubility limits are represented by Y_0.33Si_10.5Al_1.5O_0.5N_15.5 and Y_0.67Si₉A1₃ON₁₅. At 1700°C an equilibrium exists between β-Si₃N₄ and this solid solution.