PECVD SiN及其在GaAs MESFET中的应用——第1部分:PECVD SiN的制备及其组分和键结构

叙述了PECVD SiN的制备、性能及其在GaAs场效应器件中的应用。第一部分叙述PECVD SiN的一般概念、设备及淀积条件,阐明其键结构以及它们与工艺条件的关系。第二部分叙述PECVD SiN性能及其与工艺条件的关系,着重叙述在GaAs器件中的应用和对器件性能的影响。     

化合物半导体器件与电路的研究进展

介绍了GaAs,InP和GaN等几种重要化合物半导体电子器件的特点、应用和发展前景。回顾了GaAs,InP和GaN材料的材料特性及其器件发展历程与现状。分别讨论了GaAs基HEMT由PHEMT渐变为MHEMT结构和性能的变化,GaAs基HBT在不同电路应用中器件的特性,InP基HEMT与HBT的器件结构及工作特性,GaN基HEMT与HBT的器件特性参数。总体而言,化合物半导体器件与电路在高功率和高频电子器件方面发展较快,GaAs,InP和GaN材料所制得的各种器件电路工作在不同的频率波段,其在相关领域发展潜力巨大。     

158MHz GaAs声表面波固定延迟线的研制

报道了GaAs声表面波(SAW)固定延迟线的设计方法和SAW器件金属剥离制造新工艺.研制出GaAs SAW延迟线,典型参数为：中心频率158MHz,插入损耗低于55dB,延迟时间1.5μs.     

GaAs与Si超高速数字集成电路的性能比较

本文介绍了GaAs与Si超高速数字集成电路(数字VHSIC)目前的进展情况。从材料特性、器件结构及高速集成电路的应用等方面对GaAs与Si数字VHSIC的性能进行了初步比较。探讨了GaAs与Si数字VHSIC的发展潜力及存在的主要问题。     

CMOS工艺射频功率放大器的实现与验证

射频功率放大器是无线设备的关键器件,GaAs工艺被广泛使用在射频功放的设计制造上。而CMOS工艺在生产成熟度和成本上有很大优势,主要关注用CMOS工艺来做射频功放的问题,介绍世界上第一颗量产的CMOS功放及其所使用的特殊技术。利用一款成熟的手机产品,替换这颗功放及外围器件,最后与原产品进行对比测试。     

减少GaAs发光二极管键合陷坑的方法

砷化镓(GaAs)发光二极管LED芯片既可作为发光器件,也可作为光电显示器件,并以其低能耗高亮度的优势被广泛应用,然而由于GaAs材料在机械性能上的不足,使其很容易在组装过程中产生键合陷坑,并对大批量生产造成影响。文章通过对比分析GaAs与Si的机械特性以及GaAs发光二极管的键合特殊性,较为系统地阐述了GaAs发光二极管产生键合陷坑的原因,并针对超声能量、键合压力、载片台温度等键合参数对GaAs发光二极管产生键合陷坑的影响,进行了充分的单项试验,根据试验结果制定了减少GaA s发光二极管键合陷坑的键合方法,极大提高了GaAs发光二极管的键合可靠性。     

GaAs pHEMT与Si CMOS异质集成的研究

基于圆片级外延层转移技术,将完成GaAs pHEMT有源器件加工的外延层从原有衬底上完整地剥离下来并转移到完成工艺加工的Si CMOS圆片上,基于开发的异类器件互联以及异类器件单片集成电路设计等一系列关键技术,进行了GaAs pHEMT与Si CMOS异质集成单片电路的工艺加工。研制的GaAs pHEMT与Si CMOS异质集成单片数字控制开关电路与传统的GaAs pHEMT单片电路相比,芯片面积减小15%。     

重庆光电技术研究所新产品介绍

一、GF9410U 型 GaAs 发光二极管1.器件结构及简要工作原理该 GaAs 发光二极管是在 n 型 GaAs 衬底上,通过液相外延技术形成一层 n 型 GaAs 和一层型 GaAs 同质 In 结,再用树脂封装而成。在正向偏咒下,注入到确源区的电子和空穴复合     

无线通信的RF器件及MMIC

近年来以手机为主的移动通信终端的日益普及,大大地推动了其关键器件GaAsMMIC和RF器件及模块的研发和规模生产的进程,给GaAs市场提供了巨大的市场机遇,使GaAs技术向低成本大批量民用领域实现了成功突破。 GaAs MMIC是移动通信终端高频段实现小型、高     

半绝缘非掺GaAs材料制备的MESFETs背栅效应

设计了一套适用于二种工艺(离子注入隔离工艺和半绝缘衬底自隔离工艺)的背栅效应测试版图,用选择离子注入形成有源层和欧姆接触区,在非掺杂的半绝缘GaAs衬底上制备GaAs MESFETs器件。研究了这二种不同工艺制备的MESFETs器件的背栅效应以及不同距离背栅电极的背栅效应大小。结果表明,采用离子注入隔离工艺制备的MESFETs器件的背栅效应要比采用半绝缘衬底自隔离工艺制备MESFETs器件的背栅效应小,背栅效应的大小与距离近似成反比,采用隔离注入的背栅阈值电压随距离变化的趋势比采用衬底自隔离的更大。     

GaAsMMIC放大器单元微波参量特性研究

采用微波参量分析方法能有效地分析高速ＧａＡｓＩＣ在微波域内的频响特性。文中根据电路和工艺技术,给出了已报导的一种ＧａＡｓ放大器单元电路的一组特定参数,并进行了微波参量特性研究。     

Gate-width dependence of GaAs FET transient response

An analysis of the transient response of the GaAs FET by means of a distributed model is presented. Using a numerical-technique based on the direct evaluation of the Bromwich integral for inverse-Laplace transform, the propagation delay and rise time of devices with different gate widths are obtained. Results indicate that propagation effect is significant when the gate width exceeds 150 µm for a typical MESFET. The presented method can serve as the basis of time-domain device parameter optimization in CAD routines.     

GaAs MESFET大信号模型参数的计算机提取

利用GaAs MESFET的小信号S参数及瞬态I—V特性的测量数据,建立了GaAsMESFET的大信号分析模型,编制计算机程序,进行了参数拟合并比较了GaAs MESFET两种非线性模型的适用范围,使用分步优化的方法拟合GaAs MESFET小信号S参数,获取了大信号模型中的线性参数,非线性参数值利用最小二乘法及直接优化法相结合的算法提取。为非线性电路、功率放大器、混频器、振荡器提取了准确的设计参数。     

Stepping toward standard methods of small-signal parameterextraction for HBTs

An improved HBT small-signal parameter extraction procedure is presented in which all the equivalent circuit elements are extracted analytically without reference to numerical optimization. Approximations required for simplified formulae used in the extraction routine are revised, and it is shown that the present method has a wide range of applicability, which makes it appropriate for GaAs and InP-based single and double HBTs. Additionally, a new method is developed to extract the total delay time of HBTs at low frequencies, without the need to measure h₂₁ at very high frequencies and/or extrapolate it with -20 dB/dec roll-off. The existing methods of finding the forward transit time are also modified to improve the accuracy of this parameter and its components. The present technique of parameter extraction and delay time analysis is applied to an InGaP/GaAs DHBT and it is shown that: (1) variations of all the extracted parameters are physically justifiable; (2) the agreement between the measured and simulated S- and Z-parameters in the entire range of frequency is excellent; and (3) an optimization step following the analytical extraction procedure is not necessary. Therefore, we believe that the present technique can be used as a standard extraction routine applicable to various types of HBTs     

Optimal design of electronic system utilizing an integrated multidisciplinary process

An investigation is conducted to develop an integrated model for electronic equipment design and to propose a solution method for the generated multi-attribute optimization problem. An integrated system model that incorporates all domain specific knowledge is developed that can track dependencies among the domains under study here. The overall multidisciplinary optimization problem as defined by the objective function, constraint set and design variables are formulated, and nonlinear solution methods are employed. To present the optimal solution for the electronic equipment design, the influence of several design-related functions on the objective function is examined. Additionally, the influence of weighting functions on the value of each individual function is determined. Finally, a multiattribute analysis is performed and the influence of each domain on the overall system is studied. First order and detailed optimization analysis are conducted to understand the sensitivity of each engineering field on the overall design. It is evident that not all the engineering fields are equally important in the design optimization. An amplifier, located on a shelf in a frame, used in the industry was utilized for a case study.     

砷化镓衬底上螺旋电感的建模和分析

针对砷化镓(GaAs)衬底上螺旋电感提出了一种改进形式的集总参数等效电路模型,该等效电路模型能很好地表征螺旋电感的高频效应.同时,应用电磁场全波分析方法对螺旋电感进行仿真,并分析各参数对电感性能的影响.从得到的散射参数中提取出有效电感、Q值和自谐振频率.基于参数优化方法提取等效电路模型中各元件值,并利用曲线拟合技术给出其相应的闭合表达式.这些表达式可用于射频和微波集成电路的设计,从而提高电路设计的性能和效率.     

Parameter Estimation Using Microprocessors and Adaptive Random Search Optimization

An optimization procedure is presented which can be used for off-line system parameter estimation. The technique utilizes a model reference adaptive control configuration and an adaptive random search to identify the parameter values for an arc voltage control system of an automatic welding process. An 8-bit microprocessor is used to acquire data from the system, and a microprocessor development system performs the optimization routine.     

Surface-Oriented Transferred-Electron Devices

The application of MESFET technology to the manufacturing of surface-oriented transferred-electron devices (TED's) with parmeters close to GaAs MESFET's is discussed. The limitations related to the contact resistance, fringing capacitance, domain formation time, impact ionization, and heat sinking are analyzed for GaAs and InP devices. Our estimates show that the surface-oriented devices can be used as microwave LSA generators at higher frequencies than the conventional LSA diodes. In a domain mode, the surface-oriented TED's can yield low values of the power-delay product comparable to those of GaAs MESFET's at higher speeds. The analysis of impact ionization within a high-field domain leads to a conclusion that even InP logic devices with practical lengths of the active layer can be manufactured with doping densities up to 10/sup 17/cm/sup -3/. The estimate of the temperature rise indicates that a CW operation is possible for practical device parameters. Because the parameters of surface-oriented TED's are similar to those of GaAs MESFET's they may be manufactured using the rapidly developing GaAs integrated-circuit technology and used in combination with GaAs MESFET's.     

Analysis and Optimization of Millimeter-And Submillimeter-Wavelength Mixer Diodes

An analysis of the noise of millimeter- and submillimeter-wavelength mixers with GaAs Schottky diodes is presented. This analysis accounts for the correlation of the downconverted components of the time-varying hot-electron noise in the series resistance, and is thus accurate even for cryogenically cooled mixers operated at submillimeter wavelengths. This paper shows that the terms of the series-resistance noise correlation matrix are functions of the Fourier coefficients of the squared diode current F(I/sup 2/) rather than the square of the Fourier coefficients of the diode current [F(I)]/sup 2/, as has been previously presented in the literature. The analysis is used to evaluate the optimization of cryogenic mixer diodes. It is shown that minimization of the diode's I-V slope parameter V/sub 0/ is more critical than reduction of the parasitic elements for millimeter-wavelength operation, while at frequencies above 600 GHz (Lambda<0.5 mm), the junction capacitance is the most crucial parameter. Experimental results from several research groups working with a variety of mixers are presented to substantiate these results.     

基于两跳载波配对策略的非再生OFDM中继系统性能优化

该文针对非再生中继方式,分析了基于正交频分复用(OFDM)的两跳中继系统的容量,并推广到发送端具有两根天线采用空时块码(STBC)的情形。以最大化端到端的信息速率为优化准则,提出了非再生两跳载波配对定理,并结合注水定理分别在频域、空域,以及空频二维进行了资源联合优化。仿真结果表明,资源联合优化与传统的平均资源分配相比,显著提高系统容量,且STBC-OFDM能获得更高性能增益。通过子载波配对方案能进一步增强系统性能。