Heterogeneous graphene nanostructures: ZnO nanostructures grown on large-area graphene layers

In this work, the synthesis and characterization of three-dimensional hetergeneous graphene nanostructures (HGN) comprising continuous large-area graphene layers and ZnO nanostructures, fabricated via chemical vapor deposition, are reported. Characterization of large-area HGN demonstrates that it consists of 1-5 layers of graphene, and exhibits high optical transmittance and enhanced electrical conductivity. Electron microscopy investigation of the three-dimensional heterostructures shows that the morphology of ZnO nanostructures is highly dependent on the growth temperature. It is observed that ordered crystalline ZnO nanostructures are preferably grown along the <0001> direction. Ultraviolet spectroscopy and photoluminescence spectroscopy indicates that the CVD-grown HGN layers has excellent optical properties. A combination of electrical and optical properties of graphene and ZnO building blocks in ZnO-based HGN provides unique characteristics for opportunities in future optoelectronic devices.     

Hydrothermally grown ZnO nanostructures on few-layer graphene sheets

This study describes the hydrothermal growth of ZnO nanostructures on few-layer graphene sheets and their optical and structural properties. The ZnO nanostructures were grown on graphene sheets of a few layers thick (few-layer graphene) without a seed layer. By changing the hydrothermal growth parameters, including temperature, reagent concentration and pH value of the solution, we readily controlled the dimensions, density and morphology of the ZnO nanostructures. More importantly, single-crystalline ZnO nanostructures grew directly on graphene, as determined by transmission electron microscopy. In addition, from the photoluminescence and cathodoluminescence spectra, strong near-band-edge emission was observed without any deep-level emission, indicating that the ZnO nanostructures grown on few-layer graphene were of high optical quality.     

Edge effect on resistance scaling rules in graphene nanostructures

We report an experimental investigation of the edge effect on the room-temperature transport in graphene nanoribbon and graphene sheet (both single-layer and bilayer). By measuring the resistance scaling behaviors at both low- and high-carrier densities, we show that the transport of single-layer nanoribbons lies in a strong localization regime, which can be attributed to an edge effect. We find that this edge effect can be weakened by enlarging the width, decreasing the carrier densities, or adding an extra layer. From graphene nanoribbon to graphene sheet, the data show a dimensional crossover of the transport regimes possibly due to the drastic change of the edge effect.     

Atomic-scale electron-beam sculpting of near-defect-free graphene nanostructures

In order to harvest the many promising properties of graphene in (electronic) applications, a technique is required to cut, shape, or sculpt the material on the nanoscale without inducing damage to its atomic structure, as this drastically influences the electronic properties of the nanostructure. Here, we reveal a temperature-dependent self-repair mechanism that allows near-damage-free atomic-scale sculpting of graphene using a focused electron beam. We demonstrate that by sculpting at temperatures above 600 °C, an intrinsic self-repair mechanism keeps the graphene in a single-crystalline state during cutting, even though the electron beam induces considerable damage. Self-repair is mediated by mobile carbon ad-atoms that constantly repair the defects caused by the electron beam. Our technique allows reproducible fabrication and simultaneous imaging of single-crystalline free-standing nanoribbons, nanotubes, nanopores, and single carbon chains.     

Emerging transparent electrodes based on thin films of carbon nanotubes, graphene, and metallic nanostructures

Transparent electrodes are a necessary component in many modern devices such as touch screens, LCDs, OLEDs, and solar cells, all of which are growing in demand. Traditionally, this role has been well served by doped metal oxides, the most common of which is indium tin oxide, or ITO. Recently, advances in nano-materials research have opened the door for other transparent conductive materials, each with unique properties. These include CNTs, graphene, metal nanowires, and printable metal grids. This review will explore the materials properties of transparent conductors, covering traditional metal oxides and conductive polymers initially, but with a focus on current developments in nano-material coatings. Electronic, optical, and mechanical properties of each material will be discussed, as well as suitability for various applications.     

Hyperfine interactions in graphene and related carbon nanostructures

Hyperfine interactions, magnetic interactions between the spins of electrons and nuclei, in graphene and related carbon nanostructures are studied. By using a combination of accurate first principles calculations on graphene fragments and statistical analysis, I show that both isotropic and dipolar hyperfine interactions in sp2 carbon nanostructures can be accurately described in terms of the local electron spin distribution and atomic structure. A complete set of parameters describing the hyperfine interactions of 13C and other nuclear spins at substitution impurities and edge terminations is determined. These results permit the design of graphene-based nanostructures allowing for longer electron spin coherence times which are required by spintronics and quantum information processing applications. Practical recipes for minimizing hyperfine interactions in carbon nanostructures are given.     

Supercapacitors based on electrochemically deposited polypyrrole nanobricks

Simple and inexpensive electrodeposition method for the synthesis of polypyrrole (PPy) nanobricks has been reported. These PPy nanobricks are characterized with X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Polypyrrole nanobricks exhibit amorphous nature as confirmed from XRD study. Based on SEM and TEM analysis, the formation of the spherical bunches of PPy nanobricks with average size of about 20–30 nm are inferred. The electrochemical performance of PPy electrode was evaluated by cyclic voltammetry (CV) and galvanostatic charge–discharge techniques. A high specific capacitance of 476 F·g^?1 was obtained within the potential range of ? 0.4 to 0.6 V in 0.5 M H₂SO₄ solution. Moreover, PPy electrode exhibited high discharge/charge efficiency of 89%.     

A facile method for fabrication of large area graphene nanostructures

In this study, we introduce a novel method to produce large area interconnected graphene nanostructures. A single layer CVD (Chemical Vapor Deposition) grown graphene was nanostructured by employing dewetted Ni thin film as an etching mask for the underlying graphene. As a result, a network of graphene nanostructures with irregular shapes and widths down to 10 nm is obtained. The FET (field effect transistor) devices fabricated employing the nanostructured graphene as channel material exhibit increased on/off current ratio compared to pristine graphene indicating a slight band gap opening due to the quantum confinement effect in such narrow graphene nanostructures. This technique can be useful for the large scale fabrication of graphene based electronic devices such as FETs and sensors.     

Self-assembly-induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes

We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.     

Nanofabrication of heteromolecular organic nanostructures on epitaxial graphene via room temperature feedback-controlled lithography

Nanoscale control of surface chemistry holds promise for tailoring the electronic, optical, and chemical properties of graphene. Toward this end, the nanofabrication of sub-5-nm heteromolecular organic nanostructures is demonstrated on epitaxial graphene using room temperature ultrahigh vacuum scanning tunneling microscopy. In particular, monolayers of the organic semiconductor 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) are nanopatterned on epitaxial graphene using feedback-controlled lithography (FCL) and then used as chemical resists to template the deposition of N,N'-dioctyl-3,4,9,10-perylene-tetracarboxylic diimide (PTCDI-C8). The generality of this FCL-based nanofabrication procedure suggests its applicability to a wide range of fundamental studies and prototype device fabrication on chemically functionalized graphene.     

Fast photonic switches based on GaAs nanostructures

Fast photonic switches, in which light controls light, can be created based on high-voltage GaAs nanostructures with a thin (nanodimensional) surface dielectric layer. The switches offer a high operation speed that ensures optical data recording and transmission at a rate of 10⁴-10⁵ cps, possess a large modulation amplitude, and can operate at a relatively low optical control signal power (I<1 W/cm²). These devices can be used in systems of optical data processing, optical computation systems, all-optical communication lines with optical addressing of informative signals, etc.     

Infrared photodetectors based on reduced graphene oxide and graphene nanoribbons

The use of reduced graphene oxide (RGO) and graphene nanoribbons (GNRs) as infrared photodetectors is explored, based on recent results dealing with solar cells, light-emitting devices, photodetectors, and ultrafast lasers. IR detection is demonstrated by both RGO and GNRs in terms of the time-resolved photocurrent and photoresponse. The responsivity of the detectors and their functioning are presented.     

Synthesis and electrical properties of graphene–manganese oxide hybrid nanostructures

Journal of Materials Science: Materials in Electronics - In the present contribution, grapheme–manganese oxide hybrid nanostructures (G/MnO2) were synthesized via rapid and facile microwave...     

氧化石墨烯及其与聚合物的复合

石墨烯是单原子厚度的二维碳原子晶体,也是性能优异的新型纳米复合填料.近三年来,石墨烯从概念上的二维材料变成现实材料,在化学和物理学界均引起轰动.通过述评氧化石墨及氧化石墨烯的制备、结构、改性及其与聚合物的复合,展望了石墨烯及其复合材料的研究前景,认为通过机械剥离氧化石墨可规模化制备氧化石墨烯,进一步将其化学改性并制备复合材料已取得较大进展,这一途径被认为足石墨烯规模化应用的战略起点.     

Tunable plasmon-induced transparency based on graphene nanoring coupling with graphene nanostrips

We numerically and theoretically demonstrate a plasmon-induced transparency (PIT) at the mid-infrared region with finite-difference time-domain method. The system consists of an optically bright dipole mode and a dark quadrupole mode, which are supported by the graphene nanoring and graphene nanostrips, respectively. The coupling between the two modes introduces transparency window and large group delays. The pronounced PIT resonance can be easily modified by adjusting the geometric parameters and the Fermi level of graphene nanostructure. Our results suggest that the demonstrated PIT effect may be applicated in the slow-light device, active plasmonic switching, and optical sensing.     

Ultrabroadband photodetection based on graphene ink

We report photodetection in a very large spectral bandwidth, which encompasses ultraviolet, visible and near infrared, using graphene inks or graphene inks functionalized with either gold or silver nanoparticles, or gold nanoparticles further encapsulated with bovine serum albumin deposited on interdigitated electrodes fabricated on a silicon dioxide/silicon substrate. In contrast to gold-functionalized graphene inks, which have responsivities better than 1 mA W(-1) at a 0.1 V bias over the huge bandwidth extending from 215 to 2500 nm, Ag-functionalized inks show at least a four-fold increased responsivity, with a record value of 13.7 mA W(-1) in near infrared.