Preparation of NiAl2O4/SiO2 and Co2+-Doped NiAl2O4/SiO2 Nanocomposites by the Sol–Gel Route

NiAl₂O₄/SiO₂ and Co²⁺-doped NiAl₂O₄/SiO₂ nanocomposite materials of compositions 5% NiO – 6% Al₂O₃– 89% SiO₂ and 0.2% CoO – 4.8% NiO – 6% Al₂O₃– 89% SiO₂, respectively, were prepared by a sol–gel process. NiAl₂O₄ and cobalt-doped NiAl₂O₄ nanocrystals were grown in a SiO₂ amorphous matrix at around 1073 K by heating the dried gels from 333 to 1173 K at the rate of 1 K/min. The formations of NiAl₂O₄ and cobalt-doped NiAl₂O₄ nanocrystals in SiO₂ amorphous matrix were confirmed through X-ray powder diffraction, Fourier transform infrared spectroscopy, differential scanning calorimeter, transmission electron microscopy (TEM), and optical absorption spectroscopy techniques. The TEM images revealed the uniform distribution of NiAl₂O₄ and cobalt-doped NiAl₂O₄ nanocrystals in the amorphous SiO₂ matrix and the size was found to be ∼5–8 nm.     

Reactions of Silicon-Based Ceramics in Mixed Oxidation Chlorination Environments

The reaction of silicon-based ceramics with 2% Cl₂/Ar and 1% Cl₂/1% to 20% O₂/Ar at 950 °C was studied with thermogravimetric analysis and high-pressure mass spectrometry. Pure Si, SiO₂, several types of SiC, and Si₃N₄ were examined. The primary corrosion products were SiCl₄( g ) and SiO₂( s ) with smaller amounts of volatile silicon oxychlorides. The reactions appear to occur by chlorine penetration of the SiO₂ layer, and gas-phase diffusion of the silicon chlorides away from the sample appears to be rate limiting. Pure SiO₂ shows very little reaction with Cl₂. SiC with excess Si is more reactive than the other materials with Cl₂, whereas SiC with excess carbon is more reactive than the other materials with Cl₂/O₂. Si₃N₄ shows very little reaction with Cl₂. These diferences are explained on the basis of thermodynamic and microstructural factors.     

Subsolidus Studies in the System PbO-SiO2

The subsolidus region of the PbO-SiO₂ system was studied by DTA and X-ray diffraction. X-ray diffraction analysis showed the presence of five compounds: 4PbO.SiO₂, 3PbO·SiO₂, 2PbO·SiO₂, 3PbO·2SiO₂, and PbO·SiO₂. The compound 4PbO·SiO₂ has previously been reported to have three polymorphic forms; there are two polymorphs of 2PbO·SiO₂ with the inversion at 460°±15°C. The compounds 3PbO·SiO₂ and 3PbO·2SiO₂ were unstable above 430°±10° and 585°±15°C, respectively; PbO·SiO₂ was unstable below 525°±15°C. DTA patterns were determined for glasses of the composition of each of these compounds.     

Effect of Oxygen Vacancies on the Hot Hardness of Mullite

The structure of mullite, which has a composition ranging from 3Al₂O₃·2SiO₂ to Al₂O₃·2SiO₂, contains ordered oxygen vacancies. Sillimanite, Al₂O₃·SiO₂, has a similar structure but with no vacancies. The indentation hardness of polycrystalline mullite (3Al₂O₃·2SiO₂) was measured from room temperature up to 1400°C and compared with that of single-crystal sillimanite (Al₂O₃·SiO₂) up to 1300°C. It was found that both materials show the same variation in hardness with temperature, suggesting that the structures have a similar resistance to plastic deformation, and therefore that the oxygen vacancies in the mullite structure are not the primary cause of mullite's resistance to high-temperature deformation.     

Paralinear Oxidation of Silicon Nitride in a Water-Vapor/Oxygen Environment

Three Si₃N₄ materials were exposed to dry oxygen flowing at 0.44 cm/s at temperatures between 1200° and 1400°C. Weight change was measured using a continuously recording microbalance. Parabolic kinetics were observed. When the same materials were exposed to a 50% H₂O–50% O₂ gas mixture flowing at 4.4 cm/s, all three types exhibited paralinear kinetics. The material was oxidized by water vapor to form solid SiO₂. The protective SiO₂ was in turn volatilized by water vapor to form primarily gaseous Si(OH)₄. Nonlinear least-squares analysis and a paralinear kinetic model were used to determine parabolic and linear rate constants from the kinetic data. Volatilization of the protective SiO₂ scale could result in accelerated consumption of Si₃N₄. Recession rates under conditions more representative of actual combustors were compared with the furnace data.     

Interpretation of the Kaolinite-Mullite Reaction Sequence from Infrared Absorption Spectra

The phases in the kaolinite-mullite reaction sequence were reexamined by ir absorption spectrophotometry. Particular attention was paid to the controversial intermediate Al-containing phases. Amorphous materials were leached from fired kaolinite samples with NaOH to help identify crystalline phases. Metakaolinite partially decomposes, releasing amorphous γ-Al₂O₃ and SiO₂, before the "950°C" exothermic reaction in which metakaolinite is completely decomposed. The resulting spinel-type phase, which is associated with amorphous SiO₂ and some poorly crystalline "primary" mullite, is γ-Al₂0₃ (crystalline) rather than an Al-Si spinel. There is some evidence, however, that a fraction of the γ-Al₂O₃, may be an Al-Si spinel. At ≥1100°C secondary mullite therefore forms primarily from the γ-Al₂O₃/amorphous SiO₂ reaction and the recrystallization of primary mullite, whereas excess amorphous SiO₂ eventually crystallizes as cristobalite.     

Quaternary System Al2O3–CaO–MgO–SiO2: II Study of the Crystallization Volume of MgAl2O4

Solid-state compatibility and melting relations of MgAl₂O₄ in the quaternary system Al₂O₃–CaO–MgO–SiO₂ were studied by firing and quenching selected samples located in the 65 wt% MgAl₂O₄, plane followed by microstructural and energy dispersive X-ray analysis. A projection of the liquidus surface of the primary crystallization volume of MgAl₂O₄ was constructed from CaO, SiO₂ and exceeding Al₂O₃, not involved in stoichiometric MgAl₂O₄ formation; those three amounts were recalculated to 100 wt%. The temperature and character of six invariant points, where four solids co-exist with a liquid phase, were defined. One maximum point was localized and the positions of the isotherms were tentatively established. The effect of CaO, SiO₂, and Al₂O₃ impurities on the high temperature behavior of spinel materials was also discussed.     

Etching of Silicon Carbide Materials at Elevated Temperatures in a Nitrogen-Based Gas

Two sintered SiC-based materials were heat-treated for 150 h at 1300°C in a nitrogen-based gas (1.2% H₂, 0.6% CO) at a total pressure of 130 Pa. Sintered SiC samples were also preoxidized and then exposed to this gas under the same conditions to evaluate the protective nature of an SiO₂ scale. In this atmosphere, SiO gas and cyanogens are predicted to form, rather than SiO₂. Experimental studies confirmed that etching of sintered SiC occurs. Preoxidation does not provide protection from etching, because of the rapid removal of SiO₂ by H₂ as H₂O and SiO.     

Exploiting Covalency to Enhance Metal–Oxide and Oxide–Oxide Adhesion at Heterogeneous Interfaces

We employ first-principles density functional calculations to explore atomic-level interactions and predict the ideal work of adhesion at the SiO₂/nickel and ZrO₂/SiO₂ interfaces. We find that chemical bonding at the interface serves to strengthen significantly interfaces formed with SiO₂, which exhibits significant covalent bonding character, relative to those formed using more ionic oxides, such as Al₂O₃, in place of SiO₂. The improved strength of these interfaces due to local bonding interactions may hold materials design implications for practical applications that require optimal adhesion between metal-ceramic layered structures, including thermal barrier coatings.     

Raman Study of Grain Size Effects in the Melting Behavior of 15Na2CO3-10BaCO3-75SiO2 Batches

By means of Raman spectroscopy the melting behavior of 15Na₂CO₃−10BaCO₃−75SiO₂ batches with different grain sizes of raw materials was investigated both qualitatively and quantitatively. The results show that the reaction rate at low temperatures ( T ≤800° to 900°C) increases when finer grains of all raw materials are used; upon pelletizing the fine batch the reaction rate increases even further. At high temperatures ( T > 900°C) the grain size of SiO₂ is the main determining factor, the melting rate being increased when fine SiO₂ grains are used.     

Oxygen Grain-Boundary Diffusion in Polycrystalline Mullite Ceramics

Oxygen tracer diffusivities of low- and high-alumina mullite ceramics (72 wt% Al₂O₃, 28 wt% SiO₂ and 78 wt% Al₂O₃, 22 wt% SiO₂, respectively) were determined. Gas/solid exchange experiments were conducted in an atmosphere enriched in the rare stable isotope ¹⁸O, and the resulting ¹⁸O isotope depth distributions were analyzed using SIMS depth profiling. The investigation showed that grain-boundary diffusivities for both mullite ceramics were several orders of magnitude higher than mullite volume diffusivity. Activation enthalpies of oxygen diffusion were 363 ± 25 kJ/mol for the low-alumina and 548 ± 46 kJ/mol for the high-alumina materials. Because the glassy grain-boundary films were not identified, the differences between the low- and high-alumina materials might be explained by different impurity concentrations in the grain boundaries of the two materials.     

Grain Growth Phenomena in the Interface Region of α-Alumina Bilayer Composites

Microstructural development in the interface region of α-Al₂O₃ bilayer composites has been systematically investigated in terms of the sintering additive CaO–SiO₂, residual impurity level in the starting powders (particularly MgO), and sintering conditions. The interfacial microstructure is strongly related to relative CaO–SiO₂ doping levels in the two constituting layers and to residual impurities in the starting powders. The presence of high levels of impurities in the starting powder can substantially modify the features of CaO–SiO₂-Al₂O₃ liquid at the interface region, thereby strongly influencing α-Al₂O₃ grain growth across the interface. Three grain growth modes in the interface region thus have been identified for different combinations of impurity level and CaO–SiO₂ dopant in the α-Al₂O₃ bilayer. This provides an important mechanism for controlling two-dimensional structures in coatings, films, and layered ceramic materials for various engineering applications.     

Phase Diagram of Wollastonite-Zirconia

A reexamination of the system CaO·SiO₂–ZrO₂ has been conducted in order to use this system to obtain ZrO₂-toughened wollastonite materials. The results have shown that CaO·SiO₂–ZrO₂ is a pseudobinary system with an invariant peritectic point at 1467°± 2°C, which is in disagreement with previously reported results.     

Microstructural Characterization of Superplastic SiO2-doped TZP with a Small Amount of Oxide Addition

The microstructures of 5 wt% SiO₂-doped TZP, 5 wt% (SiO₂+ 2 wt% MgO)-doped TZP, and 5 wt% (SiO₂+ 2 wt% Al₂O₃)-doped TZP are characterized by high-resolution electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. An amorphous phase is formed at multiple grain junctions but not along the grain-boundary faces in these three materials. A small addition of MgO and Al₂O₃ into the SiO₂ phase results in a marked reduction in tensile ductility of SiO₂-doped TZP. This reduction seems to correlate with segregation of magnesium or aluminum ions at grain boundaries and a resultant change in the chemical bonding state.     

Grain-Boundary Viscosity of Polycrystalline Silicon Carbides

Internal friction experiments were conducted on three SiC polycrystalline materials with different microstructural characteristics. Characterizations of grain-boundary structures were performed by high-resolution electron microscopy (HREM). Observations revealed a common glass-film structure at grain boundaries of two SiC materials, which contained different amounts of SiO₂ glass. Additional segregation of residual graphite and SiO₂ glass was found at triple pockets, whose size was strongly dependent on the amount of SiO₂ in the material. The grain boundaries of a third material, processed with B and C addition, were typically directly bonded without any residual glass phase. Internal friction data of the three SiC materials were collected up to similar/congruent2200°C. The damping curves as a function of temperature of the SiO₂-bonded materials revealed the presence of a relaxation peak, arising from grain-boundary sliding, superimposed on an exponential-like background. In the directly bonded SiC material, only the exponential background could be detected. The absence of a relaxation peak was related to the glass-free grain-boundary structure of this polycrystal, which inhibited sliding. Frequency-shift analysis of the internal friction peak in the SiO₂-containing materials enabled the determination of the intergranular film viscosity as a function of temperature.     

Microstructure and Properties of Co2+: ZnAl2O4/SiO2 Nanocomposite Glasses Prepared by Sol–Gel Method

Transparent bulk Co²⁺: ZnAl₂O₄/SiO₂ nanocomposites containing nanocrystalline Co²⁺: ZnAl₂O₄ dispersed in silica glass matrix were obtained by the sol–gel method. The gels of composition 89SiO₂–6Al₂O₃–5ZnO− x CoO ( x =0.2, 0.4, 0.6, 0.8, 1.0) (mol%) were prepared at room temperature by using two different aluminum salts, aluminum nitrate and aluminum alkoxide (aluminum-iso-propoxide, Al(OPrⁱ)₃), as starting materials. The transparent gels were converted to the crystalline phase of gahnite by heating above 900°C. The microstructural evolution of gels was characterized. The effect of Co²⁺ concentration on spectroscopic properties was also discussed. Co²⁺: ZnAl₂O₄ nanocrystals dispersed in the SiO₂-based glass are formed at lower heat-treatment temperature and shorter heating time by using Al(OPrⁱ)₃ as raw material.     

Preparation of TiO2 Nanoparticles on Different SiO2 Supports by the Adsorption Phase Technique

The influence of supports on the preparation of TiO₂ nanoparticles by the adsorption phase technique is studied in detailed. Series temperature experiments of two types of supports (named as SiO₂ A and B) were used. Energy-dispersive analysis by X-ray indicates that the concentration of TiO₂ on both supports decreases with temperature increasing. TiO₂ quantity on SiO₂ A decreases sharply between 40° and 60°C, whereas the temperature range for SiO₂ B is between 30° and 50°C. X-ray diffraction (XRD) shows that grain size of TiO₂ particles on two SiO₂ surfaces is all below 7 nm. It is also shown by XRD that particles on SiO₂ A decrease sharply as in the quantity curve of TiO₂, but particles on SiO₂ B all change gradually and TiO₂ particles on SiO₂ B are more uniform in transmission electron spectroscopy. The similarly of both supports is considered to be the reason for the similar changes in Ti concentration, and the different characteristics of the internal/external surface lead to variant quantity and grain size, as well as characteristics of TiO₂.     

Processing, Mechanical Properties, and Oxidation Behavior of Silicon Oxynitride Ceramics

Silicon oxynitride ceramics were prepared by hot-pressing an equimolar Si₃N₄+ SiO₂ mixture with 3 mol% CeO₂. The Ce₂O₃/SiO₂ ratio of intergranular phase (liquid phase) increased as the formation of Si₂N₂O proceeded. The intergranular liquid remained as a glass on cooling until the Ce₂O₃/SiO₂ ratio exceeded a certain value, at which point the liquid crystallized. There were great differences in thermal and mechanical properties and oxideation behavior between the specimen containing intergranular glassy phase and the one containing intergranular crystalline phase (Ce₅(SiO₄)₃N–Ce_4.67(SiO₄)₃O). The specimen containing the intergranular glassy phase showed excellent hightemperature strength and oxidation resistance.     

Microstructure and Mechanical Properties of alpha-Silicon Carbide Sintered with Yttrium-Aluminum Garnet and Silica

The effect of glassy-phase chemistry, using Y₃Al₅O₁₂ (YAG) and SiO₂ as sintering additives, on the microstructure and mechanical properties of liquid-phase-sintered, and subsequently annealed, α-SiC materials was investigated. The microstructural development of annealed materials was insensitive to changes in glass chemistry. The mechanical properties vs SiO₂/YAG ratio curve had a maximum; i.e., there was a small glass composition range at which optimum mechanical properties were realized. The best results were obtained when the ratio was ∼0.5. The flexural strength and fracture toughness of the material were >450 MPa and >6 MPa·m^1/2, respectively.     

Potassium Vapor Attack in Refractories of the Alumina–Silica System

A graphite chamber was used for the reaction between samples of 45 or 55 wt% alumina and a mixture of metallurgical coke and potassium carbonate. Thermal treatments were conducted at 1000°C. The results suggest that the potassium attack in silica-alumina bricks is controlled by the following reactions: K₂O + SiO₂→ K₂O → SiO₂ in the glassy matrix; 3(K₂O · 2SiO₂) + 3Al₂O₃→ 2SiO₂· 3(K₂O · Al₂O₃· 2SiO₂) + 2SiO₂ for short times; and K₂O → Al₂O₃· 2SiO₂+ 2SiO₂· K₂O · Al₂O₃· 4SiO₂ for long times. In 55 wt% alumina bricks containing corundum and tridymite, potassium also attacks those phases forming a glassy phase. The formation of kaliophilite at the matrix/mullite grain interface causes a volumetric expansion of 55.5%, resulting in cracks in the matrix. Because the kaliophilite phase is not in equilibrion with mullite, the former will react with free silica to form leucite that is more thermodynamically stable.