超声喷雾热解法制备ZnO薄膜及性能研究

以醋酸锌水溶液为前驱体溶液,使用自制的超声喷雾热解系统在玻璃基板上制备得到了ZnO薄膜.经X射线衍射(XRD),扫描电镜(SEM)分析得到ZnO薄膜的晶体结构和微观形貌.测试结果表明,ZnO薄膜为六角纤锌矿结构,在450～500℃下制备的薄膜显示出良好的结晶性能,并且沿(002)晶面择优取向生长,薄膜具有优良的均匀性和致密性.同时,制备得到的薄膜在可见光区也表现出80%以上的高透过率.     

多孔纳米氧化锌的模板法优化制备与电致发光特性

采用溶胶-凝胶法在中性条件下合成了孔径大小不同的介孔ZnO前驱体. 通过热氧化法, 在空气中煅烧前驱体制备了ZnO纳米晶颗粒. 讨论了反应条件对发光强度的影响, 并确定了最佳反应条件. 电致发光测试结果表明, 前驱体制备过程中, 表面活性剂的处理不会使发光特征峰发生移动; 相同测试条件下, 由介孔结构前驱体煅烧而成的ZnO样品其电致发光强度明显增强, 十八胺、F-127处理过的样品发光强度分别是普通样品的3.7倍和5.6倍. 发光强度的显著增强可能是由颗粒内介孔结构引起.     

采用旋转镀膜技术的溶液沉积法合成的LiMn2O4薄膜形貌与合成条件之间的关系研究

通过旋转镀膜技术的溶液沉积法制备LiMn2O4薄膜,详细讨论了影响LiMn2O4薄膜形貌的各种因素.研究表明前驱体溶液溶剂、溶液浓度、匀胶速度、升温速度以及加热分解温度和时间等对薄膜形貌有重大影响.实验表明LiMn2O4前驱体溶液浓度为0.2mol/L,匀胶速度为3000r/min,匀胶时间为30s,加热分解温度350℃,加热分解时间20min,升温速度为10℃/min为较为理想的一组合成条件.     

连续离子层吸附与反应法(SILAR)生长ZnO多晶薄膜的研究

采用连续离子层吸附与反应法(SILAR),以锌氨络离子([Zn(NH₃)₄]²⁺)为前驱体溶液,在玻璃衬底上沉积了ZnO薄膜,以XRD和SEM等手段分析了薄膜的晶体结构和表面、断面形貌,考察了空气气氛下的退火过程对ZnO薄膜晶体结构与微观形貌的影响,并初步探讨了以SILAR方法沉积ZnO薄膜的机理.结果表明,经200次SILAR沉积循环,所得ZnO薄膜为红锌矿结构的多晶薄膜,沿<002>方向择优生长;薄膜表面致密、光滑均匀,厚度约800nm.退火处理使ZnO薄膜氧缺位减少,晶粒沿c轴取向增强;随退火温度升高,锌间隙原子增加;500℃退火时,ZnO薄膜发生再结晶.减小前驱体溶液的[NH₃·H₂O]/[Zn²⁺]比率可提高ZnO薄膜生长速率.     

室温Zn粉直接制备ZnO纳米颗粒薄膜及其机理研究

首次在室温条件下超声方法直接将金属Zn制备ZnO纳米颗粒薄膜。利用滚压振动磨机械研磨的Zn粉作为原料,采用独特的油相水相混合溶液作为分散液,超声分散打破软团聚使金属Zn纳米颗粒水解得到了分散性较好的纳米粒子,并且可以利用该纳米粒子简单地制备出均匀致密的ZnO纳米粒子薄膜。利用X射线粉末衍射仪(XRD)、透射电子显微镜(TEM)对产物进行了表征。结果表明,采用该方法可制得具有密排六方结构的ZnO纳米颗粒,并且该产物分散较好。原子力显微镜(AFM)、静电力显微镜(EFM)表明利用该纳米粒子制备的薄膜致密均匀,EFM显示纳米粒子表面电学性质有较大差异。探针台I-V测试显示不同原料Zn粉制备出的ZnO纳米颗粒薄膜可以获得不同导通电压从而获得不同的整流效果。该方法在室温条件下由Zn粉制备出ZnO纳米颗粒和薄膜,为制备不同维度ZnO纳米结构提供了新思路,同时也为制备、改善整流器件提供了创新和经济的途径。     

化学浴法Cu2S纳米晶薄膜的制备及其光学特性研究

利用化学浴沉积法,以EDTA为络合剂,CuSO4·5H2O和Na2S2O3为前驱体溶液制备了硫化亚铜纳米薄膜,用FESEM、XRD、光学显微镜研究了前驱体浓度、络合剂的浓度、溶液的pH值、反应温度等因素对硫化亚铜纳米薄膜的表面形貌、晶粒大小与晶体结构的影响.结果表明,在最佳的生长条件下可以制备晶粒匀一、结构致密的硫化亚铜纳米薄膜,紫外可见吸收光谱表明硫化亚铜薄膜具有一定的透光性,并对红外光有很好屏蔽的作用.     

In含量变化对N-In共掺杂ZnO薄膜的结构和性能的影响

采用超声雾化热解法制备ZnO薄膜，对比分析了不同In含量的N-In共掺杂ZnO薄膜的显微结构，电学和光学性质。实验结果表明在N-In共掺杂条件下In的含量对ZnO薄膜的显微结构及性能有明显的影响。In的掺入使得ZnO中总体缺陷减少，晶粒外形更规则，C轴取向性更好。引入In能使ZnO更容易向P型转变；当前驱体溶液中In的比例〉0．03后，可以显著改善ZnO薄膜的电学性能和光学性能。     

PZT/ZnO薄膜制备及其结构特性研究

利用固相反应制备的ZnO-Li_(2.2%)陶瓷靶和RF射频磁控溅射技术在Si(100)基片上制备了高度c轴择优取向的ZnO薄膜,XRD和电性能分析表明掺杂Li离子改善了ZnO靶材的结构和性能,同时研究了不同RF溅射温度对ZnO薄膜结构与取向的影响;然后采用sol-gel前驱单体薄膜制备方法,以ZnO为过渡层淀积PZT薄膜,探讨高度c轴(002)择优取向ZnO薄膜对PZT薄膜结构与性能的影响,实验发现在PZT/ZnO异质结构中,致密、均匀和高度c轴择优取向的ZnO可作为晶核,促进PZT钙钛矿结构转化、晶粒(110)择优取向生长,相应降低PZT薄膜的退火温度.     

低温水浴法制备不同花状结构ZnO粉体及其发光性能研究

以二水合乙酸锌和尿素为原料,聚乙二醇-2000为改性剂,用氨水调节体系pH,采用水浴法在一定的工艺条件下制备了不同花状结构ZnO粉体。结果表明,添加聚乙二醇-2000时所制得的ZnO粉体呈现花状的结构,ZnO前驱体溶液中不同氨水量使得组成花状结构的ZnO微棒结构从六棱棒状结构向纺锤状结构转变。X射线衍射结果表明不同棒状结构组成的花状ZnO其峰(002)与峰(001)的相对强度比不同。透射电子显微镜表明六棱棒状结构的ZnO粉体呈现单晶结构,而纺锤状结构的ZnO粉体倾向于多晶结构。室温光致发光谱表明不同微棒组成的花状ZnO粉体均在约380nm存在近带边发射峰。     

溶胶-凝胶法制备钇掺杂氧化锆的工艺研究

论述了用溶胶-凝胶法制备钇掺杂的氧化锆前驱体的过程,系统地研究草酸溶液的浓度、pH值、加热温度以及添加方式对溶胶、凝胶的影响,得出制备氧化锆前驱体的最佳工艺条件:当氧氯化锆溶液与草酸溶液的浓度比为1.25～2,草酸溶液pH值为1～2,加热温度为40～80℃,制得的前驱体溶胶、凝胶均匀,透明.正加方式得到的溶胶淡蓝色透明,较反加方式下的溶胶的胶凝时间短.并对最佳工艺条件制备的粉体进行SEM分析,结果表明,很好地合成了钇掺杂的纳米氧化锆粉体.     

Laser patterning of Zn for ZnO nanostructure growth: Comparison between laser induced forward transfer in air and in vacuum

This study reports patterning of surfaces with Zn using the laser induced forward transfer (LIFT) technique and subsequent chemical growth of ZnO thin films. The LIFT process is performed both in vacuum and in air and yields a Zn pattern on the receiving substrate. These Zn patterns were used as precursors to chemically grown ZnO thin films, and the morphology of these films was investigated and compared. Inspection of the films grown from the in-vacuum deposited pattern revealed the aligned growth of ZnO nanorods (NRs), in the regions where the Zn precursor was deposited, while no substantial ZnO growth was observed outside the precursor patterns. The ZnO films grown from the in-air deposited patterns show different growth behaviour; the precursor pattern is not well preserved and the surface morphology reveals flower-type ZnO nanorods. The difference in morphology of the seeding Zn patterns deposited under the two environments (vacuum versus air) directly translates into different morphology ZnO features, chemically grown from these patterns (nanorod versus flower growth).     

Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique

Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 °C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the film grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.     

Effects of substrate parameters on structure and optical properties of ZnO thin films fabricated by pulsed laser deposition

Highly oriented zinc oxide thin films have been grown on quartz, Si (1 1 1) and sapphire substrates by pulsed laser deposition (PLD). The effect of temperature and substrate parameter on structural and optical properties of ZnO thin films has been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), optical transmission spectra and PL spectra. The experimental results show that the best crystalline thin films grown on different substrate with hexagonal wurtzite structure were achieved at growth temperature 400–500 °C. The growth temperature of ZnO thin film deposited on Si (1 1 1) substrate is lower than that of sapphire and quartz. The band gaps are increasing from 3.2 to 3.31 eV for ZnO thin film fabricated on quartz substrate at growth temperature from 100 to 600 °C. The crystalline quality and UV emission of ZnO thin film grown on sapphire substrate are significantly higher than those of other ZnO thin films grown on different substrates.     

Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass

Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth.     

Effect of chelating agents on the preferred orientation of ZnO films by sol-gel process

The effect of chelating agents of ZnO precursor solutions on crystallization behavior was investigated. Two different additives, monoethanolamine (MEA) and diethanolamine (DEA), and crystalline Pt (111)/Si and amorphous SiN _x /Si substrates, were used for this study. ZnO film grown on SiN _x /Si from a DEA-chelated precursor solution shows a poorly oriented microstructure with weak crystallization peaks, while ZnO film grown on Pt(111)/Si shows a c-axis preferred orientation. In the case of ZnO films prepared with a MEA-chelated precursor solution, all films show a strong preferred orientation irrespective of substrate type. This result clearly demonstrates the role of the chelating agent on the crystallographic orientation and crystallization behavior of sol-gel processed ZnO films.     

Effect of substrate on structural and transport properties of sprayed Fe:ZnO polycrystalline thin films

ZnO thin films doped with iron have been grown by spray pyrolysis technique on glass and fused silica substrates in order to study the effect of substrate material on the structural, optical, and electro-magnetotransport properties of grown layers. The polycrystalline Fe:ZnO films have different growth orientation according to the substrate, though both films are highly transparent in the visible region of wavelength. The sample grown on glass substrate has larger magnetoresistance and lower electron mobility than that on fused silica substrate.     

Optical properties of ZnO thin film on γ-LiAlO2 substrate grown by pulsed laser deposition

Optical properties were investigated of ZnO thin films grown on (100) γ-LiAlO₂ (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown on (100) LAO substrate at the substrate temperature of 550 °C. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 nm is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition.     

Effects of buffer layer thickness on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy

ZnO thin films with different buffer layer thicknesses were grown on Si and porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of PS and buffer layer thickness on the structural and optical properties of ZnO thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO buffer layers, the intensity of the (002) diffraction peak for the ZnO thin films and its full width at half maximum (FWHM) decreased with an increase in the thickness of the ZnO buffer layers, indicating an improvement in the crystal quality of the films. On introducing PS as a substrate, the grain sizes of the ZnO thin films became larger and their residual stress could be relaxed compared with the ZnO thin films grown on Si. The intensity ratio of the ultraviolet (UV) to visible emission peak in the PL spectra of the ZnO thin films increased with an increase in buffer layer thickness. Stronger and narrower UV emission peaks were observed for ZnO thin films grown on PS. Their structural and optical properties were enhanced by increasing the buffer layer thickness. In addition, introduction of PS as a substrate enhanced the structural and optical properties of the ZnO thin films and also suppressed Fabry-Perot interference.     

Effects of sapphire substrates surface treatment on epitaxial ZnO thin films grown by MOCVD

The surface treatment effects of sapphire substrate on the quality of epitaxial ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) were studied. The sapphire substrates have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best-quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. Results show that the intensity of (002) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching is strongest. FWHM of (002) diffraction peak is narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.     

衬底温度对PLD方法生长的ZnO薄膜结构和发光特性的影响

在不同的衬底温度下, 通过脉冲激光淀积的方法在Si衬底上生长出c轴高度取向的ZnO薄膜. ZnO薄膜的结构和表面形貌通过X射线衍射和原子力显微镜表征. 同时以He-Cd激光和同步辐射作为激发源来测试样品的发光特性. 实验结果表明, 在衬底温度为500℃时生长的ZnO薄膜具有非常好的晶体质量, 并且表现出很强的紫外发射. 在用同步辐射为激发源的低温(18K)光致发光谱中, 还观察到了一个位于430nm处的紫光发射, 我们认为这个紫光发射与存在于晶粒间界的界面势阱所引起的缺陷态有关, 这个势阱可能起源于Zn填隙(Zn _i)