一种基于 ６５ ｎｍ ＣＭＯＳ 工艺的 ７７ ＧＨｚ 宽带功率放大器

本文采用65 nm CMOS工艺设计了一款基于四路功率合成的77 GHz （E波段）功率放大器。采用电容中和技术抵消密勒电容的负面效应;利用功率合成技术解决MOS管低击穿电压引起的低输出电压摆幅的问题,将多路输出功率高效合成以实现高功率输出。采用共轭匹配和多频点叠加的带宽拓展技术,有效实现电路阻抗匹配和带宽拓展。后仿真结果表明,在79 GHz处,该功率放大器的最大增益为20.5 dB,-3dB带宽为64～86 GHz,输出功率1dB压缩点为12.7 dBm,饱和输出功率16.6 dBm,峰值功率附加效率为16.5%。该功率放大器版图面积为0.29 mm2;在1.2 V供电电压下,功耗为211 mW。     

一种功率增益可控的全集成CMOS功率放大器

设计了一种单片全集成、输出功率增益可变的CMOS功率放大器电路。功率放大器电路输出级通过电容分压实现阻抗匹配,输出功率增益通过三位数字控制位实现七级增益控制。该功率放大器基于SMIC 0.18μm CMOS工艺设计。测试结果表明,当功率放大器工作在2.4GHz时,功率增益可以从2.5dB变化到16dB。当增益为16dB时,功率叠加效率约为15%,输出1dB功率为8dBm。整个功率放大器芯片尺寸为1.2mm×1.2mm。     

L波段高功率高效率功率放大器芯片设计

基于InGaP/GaAs HBT工艺,设计实现了一款L波段高功率高效率功率放大器芯片。该功率放大器利用预匹配电容与基极稳流电阻对功率放大器的基本功率单元进行设计,并对晶体管功率合成器电路进行了改进。仿真结果表明,在工作频段1 650 MHz处,小信号增益达到43.5 dB,输入输出回波小于-13 dB,饱和输出功率大于36 dBm,饱和功率附加效率大于53.8%,芯片面积仅为0.9 mm×0.7 mm。采用此改进设计后,该款芯片在较小面积内实现了较高的功率放大器效率指标。     

C波段高效率小型化GaN 150W功率放大器载片设计

介绍了一种C波段高效率GaN功率放大器的设计流程。该功率放大器为满足小型化尺寸要求,采用高介电常数的钛酸锆陶瓷实现功分器匹配电路,通过无源集总元件(integrated passive device,IPD)技术,创新性地将栅极匹配电容和二次谐波匹配网络集成在同一芯片尺寸内,采用Lange电桥合成构成平衡结构的小型化功率放大器载片。整个功率放大器在15.0 mm×9.2 mm×2.0 mm的载体内实现。测试结果显示,在工作电压36 V、输入功率40 dBm、脉宽1 ms、占空比30%条件下,4.4 GHz~5.0 GHz频带内饱和输出功率在145~166 W,功率增益在10~10.6 dB,功率附加效率大于56%,最高功率附加效率达到59.3%。     

一种65 nm CMOS 60 GHz高增益功率放大器

设计了一种基于65 nm CMOS工艺的60 GHz功率放大器。采用共源共栅结构与电容中和共源级结构相结合的方式来提高功率放大器的增益,并采用两路差分结构来提高输出功率。采用片上变压器作为输入/输出匹配及级间匹配,以减小芯片的面积,从而降低成本。采用Cadence、ADS和Momentum等软件进行联合仿真。后仿真结果表明,在工作频段为60 GHz时,最大小信号增益为26 dB,最大功率附加效率为18.6%,饱和输出功率为15.2 dBm。该功率放大器具有高增益、高效率、低成本等优点。     

基于40 nm CMOS工艺的高效率功率放大器设计

针对硅基毫米波功率放大器存在的饱和输出功率较低、增益不足和效率不高的问题,基于TSMC 40nm CMOS工艺,设计了一款工作在28GHz的高效率和高增益连续F类功率放大器。提出的功率放大器由驱动级和功率级组成。针对功率级设计了一款基于变压器的谐波控制网络来实现功率合成和谐波控制,有效地提高了功率放大器的饱和输出功率和功率附加效率。采用PMOS管电容抵消功率级的栅源电容,进一步提高线性度和增益。电路后仿真结果表明,设计的功率放大器在饱和输出功率为20.5dBm处的峰值功率附加效率54%,1dB压缩点为19dBm,功率增益为27dB,在24GHz~32GHz频率处的功率附加效率大于40%。     

一种基于0.13 μm SiGe工艺的77 GHz功率放大器

提出了一种采用0.13 μm SiGe工艺制作的77 GHz功率放大器。该放大器采用两路合成结构提高输出功率,采用两级差分放大结构提高增益。功率级选择Cascode结构,提升功率级输出阻抗,便于匹配。驱动级选择共射极加中和电容的结构,便于提升增益。在输入端,通过两路耦合线巴伦结构进行功率分配,得到两对差分信号,经过两路放大之后再通过两路耦合线巴伦结构进行功率合成,最后输出信号,级间匹配采用变压器匹配。该功率放大器采用ADS软件仿真。结果表明,在77 GHz的工作频点处,小信号增益为19.6 dB,峰值功率附加效率为11%,饱和输出功率为18.5 dBm。     

基于Doherty技术的高效率小型化LTE线性功放设计

设计了一款基于2.4mm栅宽的GaN HEMT工艺的对称型长期演进(LTE)线性Doherty功率放大器。通过使用陶瓷片Lange定向耦合器作为功率分配器并使用陶瓷片电容和微带作为匹配网络代替传统的PCB微带匹配网络,减小了电路面积。阐述了Doherty放大电路的基本原理,制作了电路实物并进行测试。在3.4~3.6GHz频段范围内,该功率放大器的饱和功率45.2dBm,饱和效率60.0%,回退8dB时效率为52.1%,线性增益为16.8dB;输入80MHz带宽LTE信号,在回退8dB时经过数字预失真(DPD)算法优化后邻信道功率比(ACPR)为-38.3dBc;功率放大器匹配部分尺寸为9mm×4mm。     

2～6GHz单片宽带功率放大器

南京电子器件研究所应用0.5μm的GaAs离子注入工艺,研制开发了2～6GHz的宽带单片功率放大器,其中的大电容采用高介电常数的电介质制造。放大器的主要性能如下:　　　工作频率/GHz　　　　2～6.7　　　电压驻波比　　　　1.7增益/dB17±1功率附加效率/%24输出功率/dB31芯片面积/mm×mm2.2×22～6GHz单片宽带功率放大器     

基于中和电容的60 GHz CMOS功率放大器设计

功率放大器（Power Amplifier, PA）是射频前端重要的模块,本文基于SMIC 55 nm RF CMOS 工艺,设计了一款60 GHz 两级差分功率放大器。针对毫米波频段下,硅基CMOS晶体管栅漏电容（Cgd）严重影响放大器的增益和稳定性的问题,采用交叉耦合电容中和技术抵消Cgd影响。通过优化级间匹配网络和有源器件参数,提高了功率放大器的输出功率,增益和效率。后仿结果显示,在1.2V的供电电压下,工作在60 GHz的功率放大器饱和输出功率为11.3 dBm,功率增益为16.2 dB,功率附加效率为17.0%,功耗为62 mW。芯片面积380×570 um2 。     

Visible blind p-π-n-n ultraviolet photodetectors based on 4H-SiC homoepilayers

p⁺-π-n⁻-n⁺ ultraviolet photodetectors based on 4H-SiC homoepilayers have been presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetectors was 300×300 μm². The dark and illuminated I-V characteristics had been measured at reverse biases form 0 to 20 V at room temperature, and the illuminated current was at least two orders of magnitude than that of dark current below 13 V bias. The peak value zones of the photoresponse were located at 280-310 nm at different reverse biases, and the peak value located at 300 nm was 100 times greater than the cut-off response value in 380 nm at a bias of 10 V, which showed the device had good visible blind performance. A small red-shift about 5 nm on the peak responsivity occurred when reverse bias increased from 5 to 15 V.     

A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium

In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric layer under the channel region, this device can avoid some weaknesses of UTB SOI devices caused by the thin silicon film and the underlying buried oxide, such as mobility degradation, film thickness fluctuation and self-heating effect. Based on self-aligned hydrogen and helium co-implantation technology, the new device can be fabricated by a process compatible with the standard CMOS process. The SDOV MOSFETs with 50 nm gate length are experimentally demonstrated for verification.     

Ce3+对掺Er3+碲铌锌钠玻璃光谱性质的影响

用高温熔融法制备了摩尔组分百分比为75TeO₂- 10Nb₂O₅-10ZnO-5Na₂O-0.5Er₂O₃-xCe₂O₃(x=0.00、0.25、 0.50、0.75、1.00)的碲酸盐玻璃样品。测量了玻璃样品的吸收光谱、上转换 光谱、拉曼光谱和 荧光光谱。结合Judd-Ofelt(J-O)理论计算了玻璃样品的强度参数Ω_t(t=2、4、6)、自发辐射跃迁几率A、荧光分支比β和辐射寿命 τrad,并用McCumber理论计算得到了Er³⁺的受激发射截面。比 较了玻璃样品中Er³⁺的放大器带宽 品质因子(σpeak_e×FWHM)和增 益品质因子(σpeak_e×τm),分 析了Er³⁺/Ce³⁺间能量转移(ET)机 理以及Ce³⁺对上转换发光的抑制作用。研究表明,适量Ce³⁺的引入对于掺Er ³⁺碲铌锌钠玻璃的光谱特性有一定的提高作用。     

P-μc-Si1-xGex ：H thin film by VHF-PECVD

In this paper, a series of boron doped microcrystalline hydrogenated silicon-germanium （p-μc-Si1-xGex：H） was deposited by very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） from SiH4 and GeF4 mixtures. The effect of GeF4 concentration on films＇ composition, structure and electrical properties was studied. The results show that with the increase of GeF4 concentration, the Ge fraction x increases. The dark conductivity and crystalline volume fraction increase first, and then decrease. When the GC is 4%, p-μc-Si1-xGex：H material with high conductivity, low activation energy （σ= 1.68 S/cm, E8=0.047 eV）, high crystalline volume fraction （60%） and with an average transmission coefficient over the long wave region reaching 0.9 at the thickness of 72 nm was achieved. The experimental results were discussed in detail.     

A robust method to measure residual stress in micro-structure

An experimental investigation on the residual stress in porous silicon micro-structure by means of micro-Raman spectros- copy is presented. It is shown by detecting the Raman peak shifts on the surfaces and cross-sections of electrochemical etched porous silicon samples with different porosities that serious residual stresses distribute complicatedly within the whole porous silicon structure. It is proved that micro-Raman spectroscopy is an effective method for residual stress testing on the micro-structures applied in optoelectronics and microelectronics.     

Planar optical waveguides prepared in GIL49 and BK7 glass substrates by K+-Na+ ion exchange with the electric field assistance

This report focuses on research into waveguides prepared by K⁺-Na⁺ ion exchange with the help of an electric field, and the subsequent comparison with waveguides prepared by pure thermal ion exchange. The goals of this work were to determine the characteristics of and to address the technological problems associated with waveguides prepared in two types of highly pure optical glass: special soda-lime silica GIL49 glass produced from pure raw materials and commercially prepared borosilicate BK7 glass. An appropriate chemical mixture, KNO₃:Ca(NO₃)₂ in the molar ratio of 41:59, was used as the source of potassium ions. Experiments were conducted at temperatures between 250 and 410°C, and electric field values between 0 and 150 V/mm. The number of modes, depth, profile, and the change in refractive index (Δn) were measured for samples from each type of glass under various technological conditions. All of these parameters can be controlled accurately and repeatedly by the electric field. These experiments have also shown that a particular advantage of these types of pure glass is the low waveguide optical losses (0.1 to 0.2 dB/cm) attainable.     

OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATOR LAYER FORMED BY O+ AND N+ CO-IMPLANTATION

 The microstructure and optical properties of a buried layer formed by O~+(200 keV,1.8×10~(18)/cm~2)and N~+(180 keV,4×10~(17)/cm~2)co-implantation and annealed at 1200℃ for 2 h have been investigated by Auger electron,IR absorption and reflection spectroscopic measurements.The results show that the buried layer consists of silicon dioxide and SiO_x(x< 2) and the nitrogen segregates to the wings of the buried layer where it forms an oxynitride.By detail theoretical analysis and computer simulation of the IR reflection interference spectrum,the refractive index profiles of the buried layer were obtained.     

中频溅射技术制备镱铒共掺Al2O3光波导

在硅单晶(100)衬底上用热氧化法氧化一层SiO₂做缓冲层,在高纯铝靶上镶嵌金属Yb,Er,然后用中频磁控溅射法制备了镱铒共掺杂氧化铝薄膜。讨论了靶电压及沉积速率随氧流量的变化的磁滞回线效应,分析得出了沉积氧化物薄膜的最佳氧流量。在室温下检测到了薄膜的位于1535nm的很强的光致发光光谱(PL),并在光学掩模下用BCl₃离子束对薄膜样品进行刻蚀,得到条形光波导。     

Er3+、Eu3+双掺杂LaOF荧光粉的光学性能研究及防伪应用

有机发光材料可能对人体或环境造成影响,除此之外还有生产成本高、发光易淬灭、发光强度与颜色不易于控制的缺点,因此探索性能优越的稀土发光材料并寻找其应用价值是具有重要意义的。本文基于水热辅助固相法制备出Er³⁺、Eu³⁺离子共掺杂LaOF荧光粉,通过X射线衍射仪(X-ray diffractometer, XRD)、扫描电镜(scanning electron microscope, SEM)和荧光分析仪对不同Er³⁺掺杂浓度下的LaOF∶Eu³⁺荧光粉体的相组成、粒径尺寸、形貌及荧光光谱进行表征与分析。结果表明：在900℃的温度下煅烧,物相由前驱体LaF₃转变为四方相LaOF,且随着Er³⁺掺杂浓度的升高,在365 nm与393 nm波长激发下均呈现出多色可调谐的发光特性,其中365 nm激发下呈现自橙色光向黄色光的转变,而在393 nm光辐射下则由橙色光向品红色光过渡。将Er³⁺、Eu³⁺共掺杂LaOF荧光粉制成...