一种基于FPGA的LVDS数据串并转换设计

LVDS传输方式越来越多地应用在高速的信息传输中,而基于FPGA的LVDS数据接收也得到了更广泛的应用。文章介绍了一种基于FPGA的LVDS数据接收的实现方案,对LVDS串行数据进行了串行到并行的转换。通过实际验证,该方法实现了LVDS串行数据的并行处理,保证了转换过程中数据的实时传输。     

自校验技术在LVDs传输中的应用

随着LVDS技术在高速数字系统中的应用,由于布局、布线等原因使LVDS数据和时钟出现错位情况。本文提出了自校验技术在接收AD9252LVDS信号时的应用,可以使接收到的数据实现自动纠错的功能,从而增加了LVDS数据传输的稳定性。此技术通过Veri10gHDL实现,已通过FPGA验证。     

LVDS接口LED显示屏数据处理系统设计

低压差分信号传输(LVDS)技术具有高速、低功耗的特点,已成为宽带高速系统设计的接口标准之一.LVDS技术的应用也为LED显示屏视频接口方案提供了新的选择.LED显示屏可采用LVDS接收器接收来自单板电脑的LVDS视频数据并转换电平.介绍了LVDS接收器SN75LVDS86的结构和原理及与FPGA的连接方式.根据LED显示屏视频显示原理得出对接收到的每点18 bit数据应转换后按颜色、灰度位平面存储于SDRAM中.视频显示是通过FPGA定时从外部SDRAM读取1帧数据再按扫描行、颜色、灰度位平面移位输出到LED显示屏来实现的.作为整个系统核心处理部件的FPGA,采用流水线方式工作实现了LVDS数据接收过程和视频显示过程的并行运行.此外,视频显示过程内部也采用流水线方式工作.分析了该流水线结构相关、数据相关和瓶颈流水段产生原因并给出了可行的解决方案.     

基于FPGA的LVDS高速数据通信卡设计

基于FPGA、PCI9054、SDRAM和DDS设计了用于某遥测信号模拟源的专用板卡。PCI9054实现与上位机的数据交互,FPGA实现PCI本地接口转换、数据接收发送控制及DDS芯片的配置。通过WDM驱动程序设计及MFC交互界面设计,最终实现了10~200 Mbit·s^-1的LVDS数据接收及10~50 Mbit·s^-1任意速率的LVDS数据发送。     

基于LVDS的高速数传方法研究

针对星载数字波束成形(DBF)多波束天线数据传输量大的特点,提出以LVDS技术为载体的高速源同步数传方法。采用数据分块串行低压差分信号(LVDS)发送策略,不仅可达到高速传输的目的,而且可节省硬件I/O资源,降低功耗;同时通过动态相位对齐算法和数据眼图实时监控算法,克服程序处理和外部环境变化对高速LVDS数据接收的影响,可满足航天设计中数据高可靠传输的要求。最后,利用Virtex-4硬件平台,验证该方法可实现360Mbit/s数据传输速率,为星载子系统间数据传输的实现提供了有效的解决方法。     

基于LVDS的高速图像数据存储器的设计与实现

为实现高速图像数据的实时接收存储和有效转发,设计了一种基于Flash的高速大容量固态数据存储器。该存储器以LVDS作为数据传输接口来接收两路高速数字图像数据;用外部FIFO作为图像数据缓存以确保数据接收和存储的并行性;通过FPGA控制整个系统的运行。经实际应用,该系统可成功地完成图像数据的接收、存储和转发功能。     

基于LVDS接口的高速图像数据记录器的设计与实现

为实现高速图像数据的实时接收存储和有效转发,本文设计了一种基于NAND型FLASH的高速大容量固态数据记录器。该记录器以LVDS作为数据传输接口来接收两路独立的高速数字图像数据;用外部FIFO作为图像数据缓存以确保数据接收和存储的并行性;通过FPGA来控制整个系统的运行。经实际应用,该系统可成功的完成图像数据的接收、存储和转发功能。     

基于NiosⅡ的图像数据采集转发系统的设计

为实现高速图像数据的实时接收存储和有效转发,设计了一种基于NiosⅡ嵌入式处理器的图像数据采集转发系统.系统采用模块化设计思想,按功能分为3个模块:数据接收模块负责接收LVDS数据;嵌入式处理器NiosⅡ完成整个系统的数据处理和控制;数据转发模块负责PCM数据转发.经实际应用,该系统可成功地完成图像数据的接收、存储和转发功能.     

一种数字图像接收测试系统的设计与实现

为了实现对某型号图像板的检测,本文提出了一种数字图像接收测试系统的设计方案,并完成系统的软硬件设计。该系统的硬件部分主要是低压差分信号传输(LVDS)接口卡,用来接收图像板的数字图像数据;该测试系统的软件部分以Windows XP为开发平台,采用了分层设计的思想,实现了图像数据的接收和显示功能。实际应用表明,该测试系统操作简单、效率高、测试结果准确,满足了用户需求。     

基于FPGA的高速通信系统研究

介绍了以FPGA为核心基于LVDS接口的高速通信系统。系统通过FPGA将并行输入的信号组成特定的串行帧格式,并用LVDS接口发送。电缆驱动器及接收均衡器芯片用于加强系统远距离数据传送的能力,以保证200m同轴电缆的数据传输。系统使用串行同步方式传输,接收端首先通过时钟恢复芯片从串行数据帧中提取同步时钟,然后接收串行数据帧并恢复原信号。系统灵活性强、稳定性高,单路传输逮度高达120Mb／s。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.