Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot

Hydrogenic acceptor binding energy as a function of dot radius in a GaMnAs/Ga_0.6Al_0.4As quantum dot is calculated including the exchange interaction of Mn alloy content with an itinerant carrier.Calculations are performed by varying its dot radius,for various Mn alloy contents in GaMnAs quantum dot within a single band effective mass approximation using variational method.The spin polaronic energy of the acceptor impurity for different Mn²⁺ is evaluated for different dot radii using a mean field theory in the presence of magnetic field strength.The magnetization is computed in the influence of magnetic field and the Mn ions.The effective g-factor of the valence band electron with the inclusion of effects of Mn ion impurities is found in the influence of the magnetic field.The exchange coupling constant is calculated for various magnetic field strengths.The results show that the p-d exchange interaction in the GaMnAs/Ga_0.6Al_0.4As quantum dot has a strong dependence on spatial confinement,effect of magnetic field strength and the Mn alloy content.Our results are in good agreement with the other investigators.     

Effect of a magnetic field on the energy levels of donor impurities in the ZnO parabolic quantum well

Energy levels of a donor impurity in the ZnO parabolic quantum well under the magnetic field are investigated using the variational method.The binding energy of the ground state,the energies of 2p±state and 1 s→2p±transition energies of a hydrogenic donor in the ZnO parabolic quantum well are numerically calculated as a function of the strength of magnetic field for different parabolic potential fields.The results show that the external magnetic field has an obvious influence on the binding energies and the 1 s→2p±transition energies of a hydrogenic donor.The Is to 2p±transition energy increases linearly with the strength of magnetic field,but the Is to 2p_ transition energy decreases when the strength of magnetic field increases for the small field strength. Compared to the GaAs parabolic well,the donors are more tightly bound to the ZnO parabolic well and the influence of external magnetic field on the binding energy of a donor is much stronger in the ZnO parabolic well.     

Electron Raman scattering in a HgS/CdS spherical quantum dot quantum well

Electron Raman scattering （ERS） is investigated in a spherical HgS/CdS quantum dot quantum well （QDQW）. The differential cross section （DCS） is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. The selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems.     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

Effects of hydrostatic pressure and external electric field on the impurity binding energy in strained GaN/AlxGa1?xN spherical quantum dots

The binding energy and Stark effect energy shifts of a shallow donor impurity state in a strained GaN/AlxGa1-xN spherical finite-potential quantum dot (QD) are calculated using a variational method based on the effective mass approximation. The binding energy is computed as a function of dot size and hydrostatic pressure. The numerical results show that the binding energy of the impurity state increases, attains a maximum value, and then decreases as the QD radius increases for any electric field. Moreover, the binding energy increases with the pressure for any size of dot. The Stark shift of the impurity energy for large dot size is much larger than that for the small dot size, and it is enhanced by the increase of electric field. We compare the binding energy of impurity state with and without strain effects, and the results show that the strain effects enhance the impurity binding energy considerably, especially for the small QD size. We also take the dielectric mismatch into account in our work.     

ON ENERGY CONSERVATION IN RADIATION PROCESS OF ELECTRON BEAM WITHIN A WAVEGUIDE SYSTEM

The formula for the electromagnetic field induced by electron beam in a waveguide witharbitrary cross-section has been derived by using the operator theory of electromagnetic field.In this formulathe normalized eigen function in ordinary dyadic Green's function is replaced by the field induced by unitpower flow.By this formula,the relationship of energy conservation in the radiation process can be proyedeasily and it can be used in the interaction theory for different microwave electron tubes.     

Optical Gain of V-groove Zn1-xCdxSe/ZnSe Quantum Wires

The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn1-xCdxSe/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn1-xCdxSe wire region increases the energy separation between the uppermost subbands. The optical gain with xy-polarized light is enhanced, while optical gain with z-polarized light is strongly decreased. The xy-polarized optical gain spectrum has a peak at around 2.541 Ev, with the transparency carrier density of 0.75×1018　cm-3. The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.     

Optical Gain of V—groove Zn1—xCdxSe／ZnSe Quantum Wires

The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.     

方形半导体量子线中光吸收的横向斯塔克效应

The ground and few excited states of the electrons confined in a square GaAs quantum wire(QW) subjected to an external transverse electric field are investigated using the finite difference method within the effective-mass approximation. When the transverse electric field is applied along a side of the square quantum wire, the calculation of the eigenstates of the quantum wire has an exactly solvable problem whose solutions involve the linear combinations of two independent Airy functions. Compared with the exact analytical results using Airy functions, the results obtained by the use of the finite difference method in terms of the eigenstates of the particle in the QW are in excellent agreement. Subsequently, it is considered that the eigenstates of the particle depend on the orientations of the electric field with respect to the center axis of the QW. It is interesting that the peak value of the energy is found for the field directed along the diagonal in the QW, which can lead to a large energy shift. Meanwhile, dependence of the optical absorption phenomenon in the square QW on the optical field and applied electric field is investigated. It is shown that the optical absorption spectrum depends highly upon the polarization of the optical field and the applied electric field intensities and orientations.     

First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO

正The electronic structure and optical properties of pure,C-doped,C-F codoped and C-F-Be clusterdoped ZnO with a wurtzite structure were calculated by using the density functional theory with the plane-wave ultrasoft pseudopotentials method.The results indicate that p-type ZnO can be obtained by C incorporation,and the energy level of C_O above the valence band maximum is 0.36 eV.The ionization energy of the complex Zn_(16)O_(14)CF and Zn_(15)BeO_(14)CF can be reduced to 0.23 and 0.21 eV,individually.These results suggest that the defect complex of Zn_(15)BeO_(14)CF is a better candidate for p-type ZnO.To make the optical properties clear,we investigated the imaginary part of the complex dielectric function of undoped and C-F-Be doped ZnO.We found that there is strong absorption in the energy region lower than 2.7 eV for the C-F-Be doped system compared to pure ZnO.     

压力下应变闪锌矿(111)取向GaN/AlGaN异质结中界面极化子的温度效应

The properties of interface polarons in a strained （111）-oriented zinc-blende GaN/AlxGa1-xN heterojunction at finite temperature under hydrostatic pressure are investigated by adopting a modified LLP variational method and a simplified coherent potential approximation. Considering the effect of hydrostatic pressure on the bulk longitudinal optical phonon mode, two branches interface-optical phonon modes and strain, respectively, we calculated the polaronic self-trapping energy and effective mass as functions of temperature, pressure and areal electron density. The numerical result shows that both of them near linearly increase with pressure but the self-trapping energies are nonlinear monotone increasing with increasing of the areal electron density. They are near constants below a range of temperature whereas decrease dramatically with increasing temperature beyond the range. The contributions from the bulk longitudinal optical phonon mode and one branch of interface optical phonon mode with higher frequency are important whereas the contribution from another branch of interface optical phonon mode with lower frequency is extremely small so that it can be neglected in the further discussion.     

Research on transmission spectra of one-dimensional magneto-photonic crystals

A magneto-photonic crystal （MPC） is defined as a periodic light-guided structure involving magnetic materials or a photo- nic crystal with some magnetic-material defects. The transfer matrices of guided optical waves （GOWs） propagating re- spectively in magneto-optical and non-magnetic dielectric layers are deduced according to the coupled-mode theory. The transmission spectra of GOWs in one-dimensional magneto-photonic crystals （1 D-MPC） are investigated by the transfer matrix method. It is shown that the two sharp peaks in the 1D-MPC＇s transmission spectra can be used for high-resolution magnetic field sensing; and a comb filter with six channels can be achieved by optimizing the 1D-MPC structure and controlling the external magnetic field.     

Properties of a polaron in a quantum dot:a squeezed-state variational approach

The ground-state energy and the average number of virtual phonons around the electron in a parabolic quantum dot for the entire range of the electron-phonon coupling constant are obtained using the single-mode squeezed-state variational approach.The variational approach we applied is based on two successive canonical transformations and using a displaced-oscillator type unitary transformation to deal with the bilinear terms which are usually neglected.In order to study the relationship between the ground-state energy and the average number of virtual phonons around the electron of a polaron in a parabolic quantum dot with the electron-LO-phonon coupling constant and the confinement length,numerical calculations are carried out in the electron-LO-phonon strong-and weak-coupling regions.     

Magnetopolaron effects on the optical absorptions in a parabolic quantum dot

We investigate the influence of magnetic field on the linear and nonlinear optical absorptions in a parabolic quantum dot (QD) through electron-LO-phonon interaction by using the Lee-Low-Pines-Huybrecht variational calculation for all coupling strengths. We apply our calculations to GaAs which is a good candidate in Ⅲ-V group semiconductors. We find that all the absorption spectra are strongly affected by the electron-LO-phonon interaction, the applied magnetic field, and the Coulomb binding potential. Furthermore, due to the Zeeman splitting, the response of all the absorption values in transition (+1→0) and (-1→0) closely depends on the magnetic field increasing.     

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.     

Dielectric confinement on exciton binding energy and nonlinear optical properties in a strained Zn1-xinMgx（in）Se/Zn1-x（out）Mgx（out）Se quantum well

正The band offsets for a Zn_(1-Xin)Mg_(Xin)Se/Zn_(1-Xout)Mg_(1-Xout)Se quantum well heterostructure are determined using the model solid theory.The heavy hole exciton binding energies are investigated with various Mg alloy contents.The effect of mismatch between the dielectric constants between the well and the barrier is taken into account.The dependence of the excitonic transition energies on the geometrical confinement and the Mg alloy is discussed.Non-linear optical properties are determined using the compact density matrix approach.The linear,third order non-linear optical absorption coefficient values and the refractive index changes of the exciton are calculated for different concentrations of magnesium.The results show that the occurred blue shifts of the resonant peak due to the Mg incorporation give the information about the variation of two energy levels in the quantum well width.     

First principles calculation of the electronic-optical properties of Cu2MgSn(SxSe1-x)4

Based on the density functional theory with hybrid functional approach,we calculated the structural,electronic,and the optical properties of Cu2MgSn(S1-xSex)4(CMTSSe),an potential photovoltaic material for thin film solar cells.The calculation reveals a phase transition from kesterite to stannite structure when Zn atoms are substituted by Mg atoms.In particular,the S-to-Se ratio can determine the energy splitting between the electronic states at the top of the valence band.The band gaps of CMTSSe can be tuned in the ranges of 1.01-1.58 eV.Calculated optical properties and tunable band gaps make them beneficial for achieving band-gap-graded solar cells.     

台阶量子阱的结构和电场对Rashba自旋分裂的影响

Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference.The dependence of the spin splitting on the electric field and the well structure,which is controlled by the well width and the step width,is investigated in detail.Without an external electric field,the spin splitting is induced by an interface related Rashba term due to the built-in structure inversion asymmetry.Applying the external electric field to the step QW,the Rashba effect can be enhanced or weakened,depending on the well structure as well as the direction and the magnitude of the electric field.The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field,and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.     

The calculation of band gap energy in zinc oxide films

We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor; the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques. The thin films were deposited at different substrate temperatures ranging between 200 and 500 ℃. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures in a cost-effective way. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96-0.99999, indicating high quality representation of data based on Equation (2), so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.