Y^3＋掺杂TiO2复合粒子的光催化活性研究

以钛酸丁酯和氧化钇为原料,采用溶胶－凝胶法研究了Ｙ＾３＋掺杂对ＴｉＯ２光催化活性的影响,通过红外光谱（ＩＲ）分析了ＴｉＯ２复合粒子的结构,结果表明：Ｙ＾３＋掺杂能够显著提高ＴｉＯ２粒子的光催化活性,当掺杂比为１００∶１．５（Ｙ＾３＋外加１．５％）时光催化活性最高,分析了Ｙ＾３＋掺杂ＴｉＯ２粒子光催化活性提高的原因。     

ZnO基陶瓷的导电性能研究

以ＺｎＯ为基添加ＭｇＯ和Ａｌ２Ｏ３制得了ＺｎＯ陶瓷。研究了掺杂含量，烧结温度和降温特性等因素对ＺｎＯ基陶瓷的导电性能影响。研究表明，Ａｌ２Ｏ３含量和烧结温度对ＺｎＯ基陶瓷的电阻率具有较大的影响，ＭｇＯ含量和降温速率对电阻温度系数影响尤为明显。     

籽晶法制备低电压压敏电阻器

对ＺｎＯ－Ｂｉ２Ｏ３－Ｓｂ２Ｏ３和ＺｎＯ－Ｂｉ２Ｏ３－ＴｉＯ２系分别进行了掺杂籽晶的试验研究,研究了籽晶加入对两系统各性能的影响规律,制备了性能优良、压敏电压低（１０Ｖ／ｍｍ）的压敏陶瓷。     

镍内电极多层陶瓷电容器介质材料的研究

通过（ＢａＯ＋ＣａＯ）／（ＴｉＯ２＋ＺｒＯ２）略大于１的Ｂａ－ＴｉＯ３系材料进行受主离子Ｃａ＾２＋、Ｍｇ＾２＋、Ｆｅ＾３＋、Ｍｎ＾２＋和Ｚｎ＾２＋掺杂试验,使瓷料在还原性气氛中与镍电极共烧,获得介电常数为１５０００、绝缘电阻率达到１０＾１２Ω．ｃｍ的抗还原陶瓷。     

Sol-Gel法制备ZnO压敏陶瓷及其电性

采用溶胶－凝胶（ｓｏｌ－ｇｅｌ）工艺制备ＺｎＯ电压敏陶瓷粉体．探讨其制备的最佳工艺条件：以 Ｚｎ（ＮＯ_３）_２与 ＮａＯＨ为反应前驱物制取胶体, Ｚｎ^２＋浓度控制在 ０．５ｍｏｌ·Ｌ^－１以上, ｐＨ值７．５左右,预烧温度３００℃,陶瓷烧结温度１２００℃;制得的压敏电阻的非线性系数α＝２８;研究了稀土Ｌａ_２Ｏ_３掺杂对该陶瓷电性的影响：低浓度掺杂时,可提高压敏电压,高浓度掺杂时;不呈现压敏特性;对粉体进行了Ｘ射线衍射和透射电镜分析,预烧后得到五元掺杂的ＺｎＯ粉体粒形呈球状,属六方晶系,粒径分布窄,约为４０～８０ｎｍ．     

Y_2O_3-SnO_2常温气敏薄膜的Sol-Gel制备及性能研究

以无机盐ＳｎＣｌ２·２Ｈ２Ｏ,Ｙ（ＮＯ３）３·６Ｈ２Ｏ为原料,无水乙醇为溶剂,采用溶胶－凝胶工艺制备了Ｙ２Ｏ３掺杂的ＳｎＯ２薄膜．采用差热－失重分析研究了Ｙ２Ｏ３掺杂的ＳｎＯ２干凝胶粉末的热分解、晶化过程．研究了Ｙ２Ｏ３－ＳｎＯ２薄膜的电学和气敏性能．从实验中得到了Ｙ２Ｏ３掺杂份量对ＳｎＯ２薄膜电学及气敏性能的影响．实验表明Ｙ２Ｏ３掺杂的ＳｎＯ２薄膜在常温下对ＮＯｘ具有较好的灵敏度和选择性,并具有较好的响应恢复性能;在常温下对Ｈ２Ｓ气体也具有一定的灵敏度．     

Yb_2O_3的掺杂方式对Ba(Ti_(1-y)Zr_y)O_3陶瓷介电性能的影响

在Ｂａ（Ｔｉ１－ｙＺｒｙ）Ｏ３中,Ｙｂ２Ｏ３的不同掺杂方式引起了材料性能的显著变化．采用 Ｂａ（Ｔｉ１－ｙＺｒｙ）Ｏ３合成后Ｙｂ２Ｏ３的适量掺杂,陶瓷介温峰明显地移动,介电常数大幅度提高, 获得了室温介电常数＞２５０００,１２５０℃左右烧成,符合Ｙ５Ｖ标准的高介材料．合成后掺杂的 Ｙｂ２Ｏ３,使材料介电常数提高,可能与施主掺杂引入的局域化电子有关．合成前掺杂Ｙｂ２Ｏ３ 的样品,介电常数较低,移峰效率偏小,可能是Ｙｂ的Ｔｉ位受主取代使施主引入的局域化电子 得到补偿的结果．     

TiC／（Al_2O_3／Y－TZP）复相陶瓷的制备与性能

本文采用热压工艺制备ＴｉＣ和Ａｌ_２Ｏ_３共同补强Ｙ－ＴＺＰ基复相陶瓷，研究了复相陶瓷的相组成、力学性能及显微结构．发现复相陶瓷的高温强度得到显著提高，１０００℃时，组成为３０ｖｏｌ％ＴｉＣ－（２５ｖｏｌ％Ａｌ２Ｏ３／１．８Ｙ－ＴＺＰ）复相陶瓷抗弯强度高达６１４ＭＰａ．ＴｉＣ颗粒补强机制在高温下发挥了重要作用．     

BaTiO_3基PTCR陶瓷中B_2O_3蒸汽掺杂的异常行为

钛酸钡基半导化陶瓷中的ＰＴＣＲ效应通常与材料中的施受主掺杂密切相关．在高温下Ｂ２Ｏ３具有较高的蒸汽压,通过Ｂ２Ｏ３蒸汽掺杂的研究表明,含主族元素Ｂ的氧化物蒸汽掺杂,钛酸钡基半导化陶瓷样品的升阻比同样得到了大幅度提高,同时室温电阻率也有所增加．Ｂ２Ｏ３蒸汽掺杂ＢａＴｉＯ３基材料的ＰＴＣＲ效应的提升可能得益于硼填隙和钡缺位相关的复合缺陷在晶界上的形成．     

Sr0.4Pb0.6TiO3基陶瓷晶界组成对热敏特性的影响

采用固相烧结工艺制备出了Ｓｒ_０．４Ｐｂ_０．６ＴｉＯ_３半导体陶瓷元件,其阻温特性具有独特的ＮＴＣＲ和ＰＴＣＲ复合效应,陶瓷室温电阻率及居里点以下的ＮＴＣＲ效应随着烧结温度的升高而提高,适当过量ＰｂＯ则能降低陶瓷室温电阻率及其ＮＴＣＲ效应．利用ＸＲＤ、ＳＥＭ和ＥＤＳ分别对样品的相结构、形貌及成份分布等进行分析,结果显示晶界中的Ｓｒ,Ｔｉ含量相对较高,而Ｐｂ含量相对较低,材料的阻温特性明显受其影响．铅挥发造成的阳离子空位是该类半导体陶瓷在居里点下出现ＮＴＣＲ效应的主要原因之一,同时探讨了Ｙ^３＋离子掺杂（Ｓｒ,Ｐｂ）ＴｉＯ_３陶瓷的半导化机理和热敏特性．     

掺杂对PMS-PZ-PT三元系材料微结构和电性能的影响

探讨了Nb2O5、NiO、Fe2O3掺杂量对三元系PMS—PZ—PT陶瓷的微观结构和电性能的影响。实验结果表明：随着掺杂量的增加，有一个共同的规律：物相组成由四方相向三方相转变；掺杂物在PMS—PZ—PT材料准同型相界区的固溶度比较小；适当的少量掺杂使εr、d33、Kp3等都有所提高，所不同的是，少量硬性掺杂和取代能提高Qm，而软性掺杂材料的Qm值却随着掺杂量的增加一直下降，改性后的组分具有良好的压电性能，能更好的满足超声马达实际使用的要求。     

泡沫碳化硅陶瓷的导电性能

采用高分子热解和反应烧结方法制备出泡沫碳化硅陶瓷，研究了泡沫碳化硅陶瓷的体积分数变化和钛的掺杂对泡沫碳化硅陶瓷骨架导电性能的影响．结果表明：随着泡沫碳化硅陶瓷的体积分数提高，泡沫碳化硅陶瓷的电阻率降低，这是泡沫碳化硅陶瓷筋中部碳化硅的面积增加所引起的；掺杂的钛转变成TiSi2导电相改善了泡沫碳化硅陶瓷的导电性能．TiSi2呈现离散和团聚两种形态分布，以不规则的形状位于碳化硅晶界之间，在碳化硅中作为施主杂质．泡沫碳化硅陶瓷表现出的正或负温度系数取决与掺杂的钛量的多少．     

ZnO-based compound conductive ceramics applied in high-frequency electric field

ZnO-based compound conductive ceramics were successfully prepared from ZnO–ZnAl₂O₄–SiO₂–Y₂O₃–MgO at 1360?°C for 3 h by the conventional ceramics method in air, and the effects of the comprehensive electrical properties with MgO changes were studied in detail. Structural and morphological characteristics of the as-prepared samples were investigated by environment scanning electron microscope (ESEM) and X-ray diffraction respectively. The properties of impedance–frequency and complex impendence reveal that the as-prepared samples could be applied in the high-frequency electric field, and the resistivity of grains and grain-boundaries have no significant difference. The dielectric properties indicate the existence of Maxwell–Wagner interfacial polarization in the matrixes. The resistivity–temperature (R–T) characteristics and the linear current–voltage (I–V) properties indicate that the conduction mechanism of ZnO-based conductive ceramics composition is thermally activated progress, and the grain-boundary effect is negligible respectively.     

Enhanced Dielectric Response in Mg-doped CaCu_3Ti_4O_(12) Ceramics

CaCu3Ti4O12 ceramics substituted by Mg for Ca were prepared by the solid state reaction method. The crystal structures, microstructures, and dielectric properties of the Ca1-xMgxCu3Ti4O12 ceramics were investigated. At lower doping concentrations, the substitution of Mg for Ca caused a decreased lattice constant, while at higher doping concentrations, some of the Mg dopants started to replace Ti and resulted in an increased lattice constant, and some could also replace Cu due to the similar ion radius betwe...     

Semiconducting barium titanate ceramics prepared by using yttrium hexaboride as sintering aid

Nb-doped BaTiO₃ semiconducting ceramics have been prepared at 1150 °C by employing YB₆ as the sintering aid. The low-temperature sintered samples exhibit a positive temperature coefficient of resistivity (PTCR) effect. The room-temperature resistivity and the magnitude of PTCR effect depend on the amount of YB₆ added, the Nb₂O₅ content and the sintering conditions. At 1 mol% of YB₆, the sample has a low room-temperature resistivity and a resistivity jump of about 10⁴. Transmission electron microscope studies revealed that the intergranular region between the crystalline BaTiO₃ grains has an amorphous structure. Y, Ba and Ti are present in the intergranular region but no Y is detectable in the crystalline grains. A liquid phase is believed to be present during sintering and it helps to facilitate the densification process and to enhance the PTCR effect.     

掺钇(Ba,Ca)(Ti,Zr)O_3电容器陶瓷抗还原性的研究

对掺钇的(Ba,Ca)(Ti,Zr)O3(BCTZ)电容器陶瓷进行了抗还原性研究,研究了不同摩尔分数的钇的掺杂对BCTZ电容器陶瓷的介电性能、显微结构和密度的影响。结果表明,随着Y2O3掺杂量的增加,BCTZ陶瓷的室温介电常数、介质损耗逐渐减小,居里温度向低温方向移动,同时绝缘电阻率升高,BCTZ陶瓷抗还原性能提高;Y2O3的掺入能够促进BCTZ陶瓷的致密化,并有利于抑制BCTZ陶瓷的晶粒生长。     

复合氧化物掺杂法制备抗还原BCTZ系陶瓷的研究

提出了一种制备抗还原BCTZ系陶瓷材料的新工艺. 采用溶胶-凝胶法在500～800℃下合成复合氧化物掺杂剂, 此掺杂剂与水热法合成的超细(Ba_1-xCa_x)(Ti_1-yZr_y)O₃粉体混合球磨可得抗还原介质瓷料, 该瓷料可在还原性气氛中烧成适用于贱金属电极的, 具有高介电常数和低介质损耗的多层陶瓷电容器陶瓷材料. 本文讨论了复合氧化物掺杂剂的合成温度、陶瓷烧结温度和退火时间等工艺参数对陶瓷介电性能和微结构的影响. 研究表明, 在低温下合成的纳米颗粒的复合氧化物掺杂剂(纳米掺杂剂)很适合超细瓷料的掺杂改性. 在500～800℃内, 复合氧化物掺杂剂的合成温度升高将导致BCTZ系陶瓷的居里点、介质损耗和介电常数最大值的降低.对陶瓷烧结工艺的研究表明, 采用此新工艺可获得符合Y5V标准的BCTZ系抗还原介质陶瓷, 其室温相对介电常数不小于18000, 介质损耗低于0.7%, 绝缘电阻率达到10¹²Ω·cm, 居里点在5～20℃之间可调, 平均晶粒尺寸G_AV小于4μm. 该新工艺可望用于大容量Y5V镍内电极多层陶瓷电容器的生产.     

Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics

The ZnO-based linear resistance ceramics doped with rare-earth oxides (Y₂O₃, La₂O₃) have been prepared by the conventional ceramics method. The effect of the different doping amounts of rare-earth oxides on the microstructure, electrical properties and aging behavior were investigated in detail. The electrical properties analysis shows that the La₂O₃ addition on ZnO-based linear resistance ceramics has more obviously influence than the addition of Y₂O₃. The samples with the La₂O₃ content of 0.25 mol% sintered at 1,320 °C exhibits excellent electrical properties with the resistivity of 253.5 Ω cm and the resistance temperature coefficient of 3.62 × 10^?4/ °C, which are improved by 60 and 90 %, respectively. The nonlinear coefficient of voltage decreases to 1.16, decreases by 4.3 % and the stability of ?1.2 % in the variation rate of the resistivity for aging temperature.     

Nonstoichiometry and the Problem of Increasing the Electrical Resistivity of SrZrO3-Based Refractories

Approaches to raising the electrical resistivity of SrZrO₃-based ceramics by doping are considered, and the principles of choosing dopants are discussed. Mechanisms are proposed which account for the observed increase in resistivity upon doping based on the current views of imperfect crystals.