研磨压力对固结聚集体磨料垫自修正影响

固结磨料研磨过程中磨料的微破碎是实现固结磨料垫自修正特性的主要途径,研磨压力是影响磨粒微破碎的关键参数。选用单晶金刚石和聚集体金刚石作为磨粒制备固结磨料垫,在15 kPa压力下以石英玻璃为加工对象进行研磨实验,比较两者的材料去除率及加工稳定性;制备了4种陶瓷结合剂含量的聚集体金刚石,并制备成固结聚集体金刚石磨料垫,探索了不同压力下的固结聚集体金刚石磨料垫的自修正性能;分析了研磨后的工件表面粗糙度和表面微观形貌。结果表明:采用固结聚集体金刚石磨料垫,研磨后工件表面粗糙度低,去除效率稳定;在15~21 kPa的压力下,结合剂含量次高的聚集体金刚石研磨效率高,材料去除率达到8.94~12.43μm/min,加工性能较稳定,研磨后的工件表面粗糙度R a在60 nm左右;在3.5~7 kPa压力下,结合剂含量次低的聚集体金刚石研磨性能较稳定,材料去除率在2.67~3.12μm/min,研磨后的表面粗糙度R a在40 nm左右。高结合剂含量的聚集体金刚石磨粒更适合高研磨压力条件,而低结合剂的聚集体金刚石磨粒更适合于低研磨压力。     

固结磨料研磨垫孔隙结构对其加工性能的影响

为了解决铜在研磨过程中铜屑黏附减小了容屑空间,易导致研磨垫钝化问题,本文尝试在亲水性固结磨料研磨垫（FAP）内部添加硫酸镁晶体,利用硫酸镁晶体遇水溶解的特性,在研磨垫表面制造不同特征的孔隙。实验在FAP中添加粒径为8目、170目、500目的硫酸镁晶体制造了3种不同孔隙分布的研磨垫,研究了不同加工参数下FAP研磨铜片时的材料去除速率、摩擦系数、表面形貌及磨屑特征。结果表明,仅含170目硫酸镁的FAP与含8目和500目硫酸镁、质量分数分别为5%和10%的FAP在研磨过程中出现了不同程度的钝化,而FAP表现出良好的自修整性能,研磨过程摩擦系数较大且保持平稳;在研磨液流量为60 ml/min时,其材料去除速率为4.46 μm/min,表面粗糙度R_a为159 nm。     

固结磨料研磨K9玻璃表面粗糙度模型

表面粗糙度模型是研磨过程设计和工艺参数选择的重要依据,K9玻璃是应用最广泛的光学材料之一。建立研磨K9玻璃表面粗糙度模型有利于提高加工效率、节约生产成本。简化固结磨料研磨过程,基于研磨垫表面微结构,计算研磨过程中参与研磨的有效磨粒数和单颗磨粒切入工件深度,利用研磨过程中受力平衡,建立固结磨料研磨K9玻璃表面粗糙度模型。采用不同磨粒粒径和不同磨料浓度的固结磨料研磨垫以及不同压力研磨K9玻璃验证表面粗糙度模型。结果表明：固结磨料研磨K9玻璃的表面粗糙度与磨粒粒径、研磨压力1/3次方成正比,与研磨垫浓度2/9次方成反比。表面粗糙度理论值与试验值随研磨压力、磨粒粒径和研磨垫浓度的变化趋势吻合。利用该模型能够成功预测固结磨料研磨K9玻璃表面粗糙度,指导研磨过程设计及加工过程中研磨垫和工艺参数的选择,可靠性高。     

三乙醇胺浓度对固结磨料研磨垫自锐性能的影响

采用不同浓度的三乙醇胺研磨液研磨石英晶体,基于研磨垫磨损率和工件与研磨垫的磨损比,分析了三乙醇胺浓度对石英晶体的去除率及其去除稳定性、研磨垫磨损率、磨损比、研磨摩擦系数、声发射信号和研磨后表面质量的影响。结果表明:随着三乙醇胺浓度的增加,工件与研磨垫磨损比先增大后减小,石英晶体的材料去除率和去除稳定性也对应地先增大后减小,摩擦系数先减小后增大,声发射信号先增加后减小,研磨后工件表面质量先变好后变差。当三乙醇胺浓度为5%时,石英晶体的材料去除率最大,去除率随时间变化最稳定,研磨垫使用寿命最长,表面质量最好。结果表明:研磨液中添加适量的三乙醇胺,会稳定石英晶体加工过程,延长研磨垫使用寿命,提高工件表面质量,降低生产成本。     

固结磨料研磨的材料去除率建模及仿真研究

通过对固结磨料研磨过程作适当简化和假设,在磨粒尺度下,依据磨粒的受力平衡条件,建立工件的材料去除率模型,并用MATLAB软件进行数值模拟,分析影响固结磨料研磨材料去除率的因素,得出结论:固结磨料研磨的材料去除率分别与磨料粒度、研磨外加载荷的二分之三次方及工件与研磨盘的相对速度呈正比,与磨料的体积分数成反比,因此可以通过增加磨料粒度、外加载荷和研磨盘的转速来提高材料去除率。     

不同粒径金刚石固结磨料抛光硫化锌晶体研究

磨粒粒径是影响抛光最重要的参数之一,是决定加工效率和工件表面质量的关键要素。采用1~3μm、2~4μm、3~5μm 3种粒径的金刚石固结磨料抛光垫加工硫化锌晶体,分析磨粒粒径对工件表面质量和材料去除率的影响。实验结果表明,磨粒粒径对硫化锌晶体的固结磨料抛光影响显著,随着磨粒粒径的增大,固结磨料抛光硫化锌晶体的材料去除率增大,而表面质量变差。2~4μm金刚石固结磨料抛光垫加工硫化锌晶体可同时获得高材料去除率和优表面质量,材料去除率达到100 nm/min,表面粗糙度为4.37 nm。     

抛光介质对固结磨料化学机械抛光水晶的影响

在固结磨料化学机械抛光中,工件表面与抛光介质易发生水解反应,产生软化层,而软化层厚度直接影响材料去除速率及表面质量.本文采用显微硬度计测量了不同介质条件下水晶表面的变质层厚度,并基于CP-4研磨抛光平台研究了不同抛光介质及温度对材料去除速率的影响,进而在线测量了抛光过程中声发射信号及抛光垫与工件之间摩擦系数的变化.结果表明:六偏磷酸钠的加入可促进水晶玻璃表层网络结构断裂,软化表层,软化层厚度随着浸泡时间、温度升高而增加,进而提高了水晶玻璃的去除率;而且随着温度升高,水解作用更加明显.实验显示,声发射信号及摩擦系数实时测量对抛光工艺参数的优化具有指导意义.     

游离磨料和固结磨料研磨后亚表面裂纹层深度研究

不同研磨方式加工K9玻璃产生不同的亚表面裂纹层深度,亚表面裂纹层深度的测量对确定材料下一步的加工去除量和提高加工效率具有重要意义。利用磁流变抛光斑点法测量游离磨料和固结磨料两种方式研磨后的亚表面裂纹层深度,每种研磨方式选用粒径分别为W40和W14的两种磨料。结果表明:磨粒粒径为W40和W14的游离磨料研磨后K9玻璃的亚表面裂纹层深度分别为20.1μm和3.646μm,而对应固结磨料研磨后的深度分别为3.37μm和0.837μm。固结磨料研磨在加工过程中能有效减小K9玻璃的亚表面裂纹层深度,提高加工效率和工件表面质量,改善器件的性能。     

固结磨料研磨蓝宝石单晶过程中研磨液的作用

开展了固结磨料研磨单晶蓝宝石面板的实验研究,探索了不同研磨液对材料去除速率和工件表面质量的影响。分析了研磨液对蓝宝石表面的化学作用,探索了固结磨料研磨蓝宝石晶体的材料去除机理。实验显示:使用W14镀镍金刚石固结磨料研磨蓝宝石单晶,研磨液仅为去离子水时,材料去除率(MRR)为149.8nm/min、表面粗糙度(Ra)为76.2nm;而研磨液中加入2%的乙二醇后,相应的MRR为224.1nm/min,Ra为50.7nm。用光电子能谱仪(XPS)分析了工件表面,结果表明含有乙二醇的研磨液能够增加蓝宝石工件表面的活性。得到的结果显示:在溶液中加入乙二醇有利于表面软化层的生成并增加蓝宝石表面的活性,说明研磨液对蓝宝石单晶研磨效率的提升和表面质量的改善具有促进作用。     

抛物面研磨的材料去除率及表面粗糙度研究

固着磨料抛物面研磨是一种新型的抛物面加工方法,文中从单个磨粒的角度出发,讨论了研磨工艺参数对材料去除率和表面粗糙度的影响,建立了理论预测模型,然后利用计算机辅助软件对不同硬度工件材料的材料去除率和表面粗糙度进行了数值模拟仿真,最后用实验验证了模型的正确性,并得出结论:理论预测模型仅能预测材料去除率和表面粗糙度的变化趋势,并不能代替实验得出具体的实验数值,即固着磨料抛物面研磨的材料去除率与主轴转速、研磨压力的5/4次方成正比,与磨粒浓度的1/4次方成反比;表面粗糙度随磨粒尺寸和研磨压力的增加而增加,随磨粒浓度的增加而减小。     

A review on the progress towards improvement in surface integrity of Inconel 718 under high pressure and flood cooling conditions

Self-conditioning performance of polishing pad is an important characteristic to influence processing efficiency and service life in chemical mechanical polishing (CMP). The slurry can react with the pad surface, which affects its self-conditioning performance in fixed abrasive polishing process. Wear ratio of wafer material removal rate (MRR) and pad wear rate is introduced to evaluate self-conditioning performance of fixed abrasive pad (FAP). To clear the effect of chemical additive on FAP self-conditioning, wear ratio, FAP surface topography, friction coefficient, and acoustic emission signal of polishing process were investigated in fixed abrasive polishing of quartz glass with ferric nitrate, ethylenediamine (EDA), and triethanolamine (TEA) slurry, respectively. Results indicate that TEA slurry can provide excellent self-conditioning of FAP in fixed abrasive polishing of quartz glass. MRR and wear ratio maintain high levels during the whole polishing process. Friction coefficient and acoustic emission signal are more stable than that of the other two chemical additives. An appropriate amount of TEA, which is beneficial to enhance MRR and extends service life of FAP, is added in the polishing slurry to improve FAP self-conditioning in fixed abrasive polishing process.     

An analytical model of the material removal rate between elastic and elastic-plastic deformation for a polishing process

This paper develops an analytical model for the material removal rate during specimen polishing. The model is based on the micro-contact elastic mechanics, micro-contact elastic-plastic mechanics and abrasive wear theory. The micro-contact elastic mechanics between the pad-specimen surfaces used the Greenwood and Williamson elastic model. The micro-contact elastic-plastic mechanics between specimen and particle, as well as the micro-contact elastic mechanics between particle and pad, are also analyzed. The cross-sectional area of the worn groove in the specimen is considered as trapezoidal area. A close-form solution of material removal rate from the specimen surface is the function of average diameter of slurry particles, pressure, the specimen/pad sliding velocity, Equivalent Young’s modulus, RMS roughness of the pad, and volume concentration of the slurry particle.     

CMP过程芯片表面氧化膜生成速度影响因素的分析

根据理论和试验分析,将机械化学抛光(CMP)过程分成两个阶段:化学作用主导阶段和机械作用主导阶段,并从机械作用角度导出CMP过程两个阶段芯片表面材料去除率的数学模型,模型全面地考虑了抛光盘特性参数(弹性模量、硬度、表面粗糙度峰的尺寸分布)、CMP工作参数(压力和抛光速度)、抛光液中磨粒的机械作用和氧化剂种类、氧化剂浓度等化学作用的影响。然后根据这两个阶段的平衡点导出定量描述芯片表面氧化膜生成速度的数学模型。详细分析机械作用因素(磨粒的浓度、磨粒的粒度分布特性)、化学作用因素(抛光液中氧化剂种类、浓度)以及磨粒/芯片/抛光盘的材料特性参数对芯片表面氧化膜生成速度的影响规律。该CMP过程芯片表面氧化膜生成速度定量模型的导出,对进一步深入研究CMP材料去除机理和更加准确地控制CMP过程,具有一定的指导作用。     

Effects of particle size, polishing pad and contact pressure in free abrasive polishing

The objective of this research is to better understand the mechanisms of material removal in the free abrasive polishing process. Experiments were carried out to understand the effects of particle size, polishing pad and nominal contact pressure on the wear rate and surface roughness of the polished surface. A theoretical model was developed to predict the relationship between the polishing parameters and the wear rate for the case of hard abrasive particles sandwiched between a soft pad and a workpiece (softer than the abrasive particles). Experimental results and theoretical predictions indicate that the wear rate increases with an increase in particle size, hardness of polishing pad and nominal contact pressure, and with a decrease in elastic modulus of the polishing pad. Surface roughness increases with an increase in particle size and hardness of polishing pad, and nominal contact pressure has little effect on the roughness. A dimensionless parameter, wear index which combines all of the preceding parameters, was introduced to give a semi-quantitative prediction for the wear rate in free abrasive polishing. It is also suggested that when polishing hard material, in order to achieve a high materials removal rate and a smooth surface, it is preferable to use diamond as the polishing particles because of their high deformation resistance.     

纳米聚集氧化硅固定磨料抛光布的抛光特性

针对传统磨料的固定磨料抛光布容易在加工表面产生划伤,以及材料去除效率低等问题,提出了采用微米级球形聚集氧化硅粒子的固定磨料抛光布。将纳米聚集氧化硅粒子添加到抛光布中,用pH为10.5的碱性水溶液替代传统的抛光液,进行了Si基板的的抛光加工试验。与传统采用不规则形状天然氧化硅及球形熔融氧化硅固定磨料抛光布进行了比较,得到了纳米聚集氧化硅的固定磨料抛光布的加工特性,并讨论了它的基本参数对加工特性的影响。实验得到了与现行纳米抛光液(重量百分比为3%,pH=10.5)相同的材料去除率,加工表面粗糙度降低了约30%。与传统不规则形状天然氧化硅磨料抛光布相比,纳米聚集氧化硅抛光布的磨料为球形,弹性系数仅为其1.4%~60%,因此不易划伤抛光表面。与熔融氧化硅抛光布相比,纳米聚集氧化硅抛光布在pH为10.5的碱性水溶液中磨料表面可吸附的[-OH]离子提高了25倍,使得液相化学去除作用增大至去除率的70%以上。另外,随着纳米聚集氧化硅的微米粒径的增大,固定磨料抛光布的纳米级加工表面粗糙度几乎不变,但对前加工面表面粗糙度的去除能力明显增大,表现出微米粒径效应。     

单晶硅同质互抛实验研究

以材料的去除率和表面粗糙度为评价指标设计对比实验,验证了硬脆材料互抛抛光的可行性,得到了抛光盘转速对硬脆材料互抛的影响趋势和大小。实验结果表明：当抛光压力为48 265 Pa（7 psi）、抛光盘转速为70 r/min时,自配抛光液互抛的材料去除率为672.1 nm/min,表面粗糙度为4.9 nm,与传统化学机械抛光方式的抛光效果相近,验证了硬脆材料同质互抛方式是完全可行的;互抛抛光液中可不添加磨料,这改进了传统抛光液的成分;采用抛光液互抛时,材料去除率随着抛光盘转速的增大呈现先增大后减小的趋势,硅片的表面粗糙度随着抛光盘转速的增大呈先减小后增大的趋势。     

使用优化的固着磨料磨盘全口径加工碳化硅反射镜

为提高碳化硅非球面反射镜的加工质量,对加工中涉及的固着磨料工艺去除函数进行了研究。在早期的实验中测试了圆形丸片的去除函数,引入填充因子的概念来评价实验所获得的去除函数,定量获得了丸片结构与填充因子之间的关系。为了提高填充因子和磨盘的加工特性,根据圆形丸片的实验结果优化了磨头的结构并基于Matlab软件模拟了新型磨头的去除函数。在全口径范围考察了磨头工作的稳定性,并在相同加工参数条件下完成了固着磨料和散粒磨料的加工实验。为了对理论模拟和实验结果进行比较,引入结构相似度指数的概念来评价全口径反射镜去除量模拟结果与实验结果之间的相似程度。结果显示,实验得到的结构相似度指数达到了0.425 7,证明优化后的固着磨料磨头在大口径碳化硅反射镜加工方面极有应用前景。     

磨粒对ADZ复合陶瓷材料磨损性能的影响

采用块 -块摩擦磨损试验机在不同磨粒的 5 %NaOH泥浆中 ,对氧化铝增强四方氧化锆多晶陶瓷材料 (ADZ)的磨损性能进行了研究。研究结果表明尖锐磨粒对ADZ复合陶瓷材料磨损的影响要比球形磨粒严重的多 ,磨料硬度是影响陶瓷材料磨损率的重要因素 ,磨损率随磨粒硬度的提高而增大。在不同形状的SiO2 磨粒的泥浆中ADZ陶瓷材料的主要磨损机理为塑性变形和微犁削。在高硬度Al2 O3磨料的泥浆中ADZ陶瓷材料磨损表面以断裂机制占主导地位。     

Ti6Al4V的微磨粒磨损研究

研究了医用Ti6Al4V合金在蒸馏水中的微磨粒磨损行为,考察了载荷、滑行距离、料浆浓度和转速对微磨粒磨损规律的影响,并对微磨粒磨损机制进行了讨论。结果表明:随载荷、滑行距离和料浆浓度的增加,Ti6Al4V合金的磨损量增加,磨损机制由三体磨损转变为混合磨损。     

A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads

The study mainly explores the fabrication mechanism for fabricating sapphire wafer substrate, by using chemical mechanical polishing (CMP) method. A slurry containing the abrasive particles of SiO₂ is used to contact with the sapphire substrate polish and to produce chemical reaction for removal of sapphire wafer substrate when CMP method is used. The study observes the changes of the removal amount of sapphire wafer substrate when the pattern-free polishing pad and hole-pattern polishing pad are used under different down forces, polishing velocities, abrasive particle sizes and slurry concentrations. Employing regression analysis theory, the study makes improvement of the equation of material removal rate (MRR) to be the material removal height per 30 minutes (MRRh), and develops a compensation parameter C_rv of the error caused by the volume concentration of slurry. The results of experimental analysis show that under a certain down force, if the polishing velocity is greater, the material removal amount will be greater. Generally speaking, the material removal amount of hole-pattern polishing pad is greater than that of pattern-free polishing pad. As to the relationship between abrasive particle size and slurry concentration, when particle size is smaller, the volume concentration of slurry will be higher, and the number of abrasives for polishing wafer will be greater. As a result, a better material removal depth can be acquired. Through the above analytical results, considerable help is offered to the polishing of sapphire wafer.