关于CSFB过程优化的研究

为了使得终端在LTE接入下能够发起话音等CS业务,接收到话音等CS业务的寻呼,并且能够对终端在LTE接入下正在进行的PS业务进行正确的处理,因此产生了CSFB技术。CSFB技术中,在LTE和2G/3G的双覆盖区域,对话音、LCS和补充业务,LTE/EPC网络能触发终端从LTE接入回退到2G/3G网络接入并进行CS业务。需要注意的是,只有在E-UTRAN与UTRAN/GERAN的重叠区域,并且用户也具有CSFB功能的时候,CSFB技术才能使用。     

基于LTE网络的CSFB语音业务设计与实现

针对LTE建网初期覆盖不足的现状,提出了基于LTE网络的CSFB语音业务方案和实现办法。目前,CSFB回落方案采用3GPP R8重定向回落方案,同时要求终端支持缓读System Information 13系统消息功能以缩短呼叫建立时延、优化方案性能。总体来说,CSFB呼叫建立过程包括三个阶段:UE在LTE网络发起呼叫/被叫接收寻呼、UE在LTE网络指引下回落并搜索合适的W小区接入、UE读取W小区系统广播消息并建立语音通话。在CSFB部署过程中,因参数配置或者设备功能缺陷,将导致CSFB呼叫建立过程出现异常情况。解决了被叫语音用户由4G网络回落到3G网络过程中出现的"被叫关机"问题,对于今后的网络优化具有参考价值。     

TD-LTE网络CSFB方案的优化研究

CSFB方案作为目前中国移动TD-LTE网络主流的语音解决方案,涉及2/3/4G网络多个网元,流程复杂、影响因素众多,本文首先对终端开机驻留、呼叫建立、挂机返回及时延异常等常见问题进行了梳理分析;然后详细阐述了CSFB呼叫时延、被叫成功率两大关键指标的优化措施,对于指导CSFB优化工作开展具有较好的参考价值。     

CSFB无线优化中面临的问题与解决方案

TD-LTE系统是纯IP网络,只提供PS业务,目前TD-LTE系统话音解决方案有单卡双待和话音回落两种,话音回落方案对终端电池的续航能力有较大提升。本文重点介绍了TD-LTE系统话音回落方式、附着流程和主被叫流程,对实际工作中CSFB遇到的典型问题如未开启CSFB功能、回落到2G失败、挂机后不能正常返回4G网络等问题进行细致的信令分析,并给出了优化解决建议。     

CSFB无线优化中面临的问题与解决方案

摘要：TD-LTE系统是纯IP网络,只提供PS业务,目前TD-LTE系统语音解决方案有单卡双待和语音回落两种,语音回落方案对终端电池的续航能力有较大提升。本文中重点介绍TD-LTE系统语音回落方式、附着流程、与主被叫流程,对实际工作中CSFB遇到的典型问题如未开启CSFB功能、回落到2G失败、挂机后不能正常返回4G网络等问题进行细致的信令分析,并给出了优化解决建议。     

浅谈LTE网络中CSFB差小区日常优化

目前CSFB技术成为运营LTE网络中完成4G用户语音业务的主要手段.在日常网络测试、KPI指标处理过程中,会遇到各种CSFB差小区,本文对实际工作中遇到的问题进行分析,梳理思路,最终应用到日常CSFB质差小区处理工作中.     

LTE网络与终端DRX寻呼周期不一致导致CSFB失败分析

随着LTE网络的发展,CSFB作为一种新的语音方案成为4G通信的一个重要组成部分,它基于原有成熟2G和3G网络来满足4G初期对于语音通信的需求。文章结合实际案列来探讨CSFB呼叫失败问题,意在提升客户感知。     

4G网络CSFB业务时延优化提升经验

本文给出了4G网络CSFB语音业务时延的优化策略,并给出了实施脚本,有效解决了CSFB语音跨网络回落时延长、感知差的问题,为运营商语音业务感知优化提供了思路。     

TD-LTE CSFB语音解决方案浅析

LTE(Long Term Evolution)网络现已全面商用,由于LTE网络是完全基于分组域架构的,所以无法提供像2G与3G网络基于电路域的语音通话,如何解决LTE网络语音通话问题成为LTE网络发展中业界关注的一个重点问题。文章主要介绍了LTE网络发展中的CSFB语音解决方案,为运营商采用CSFB技术解决语音通话方案提供一定的参考依据。     

CSFB从信令角度的分析与研究

首先介绍CSFB组网架构及总体流程,然后具体阐述CSFB的业务流程,并对业务执行中出现的问题进行定位分析;通过4G寻呼分析和4G释放分析处理问题;最后介绍CSFB案例及分析,为今后LTE优化提供参考方向.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.