Formation of Silicon Carbide from Rice Hulls

Abstract

SiC whiskers and particles have been produced from rice hulls. The process involves three major steps: coking in free air, reaction at high temperature in a reducing atmosphere of hydrogen gas, and separation of formed SiC from excess carbon by wet methods. The processing steps are reviewed and the chemistry of the process is discussed. The produced SiC was added to a molten Zn–5%Al alloy to check its potency as a reinforcing material. © 1998 Published on behalf of Canadian Institute of Mining and Metallurgy by Elsevier Science Ltd. All rights reserved.

Resume

Des barbes et des particules de SiC ont été produites à partir d'enveloppes de riz. Le processus implique trois é tapes majeures: cokefaction a l'air libre, réaction à haute température dans une atmosph è re reductrice de gaz hydrogene et separation du SiC forme de l'exces de carbone par des methodès humldes. On revoie les etapes de traitement et on discute de la chimie du processus. On a ajoute le SiC ainsi produit à un alliage fondu de Zn–5%Al afin de verifier son potentiel comme matériau de reforcement. © 1998 Published on behalf of Canadian Institute of Mining and Metallurgy by Elsevier ScienceLtd. All nghts reserved.     

高碳铬钼钢贝氏体碳化物形貌及其形成机理

 取9Cr2Mo钢和GCr15钢,奥氏体化后进行中温等温转变,采用金相显微镜和QUANTA-400扫描电子显微镜研究贝氏体碳化物的形貌及其形成机理。结果表明,9Cr2Mo钢和GCr15钢的上贝氏体组织呈羽毛状,上贝氏体碳化物呈长短不一的薄片状或短棒状,分布在铁素体亚片条或亚单元之间,其排列与贝氏体铁素体片条轴向大体上平行分布;下贝氏体组织呈竹叶状或针状,下贝氏体碳化物呈细片状或纤维状等形状,分布在铁素体片中间,大多数与片条的主轴方向交角排列,但角度不等。钢中贝氏体碳化物在γ/α相界面上形核,向奥氏体中和铁素体亚单元间长大,是碳原子沿着相界面扩散的过程。     

Carbide Formation and Dissolution in Biomedical Co-Cr-Mo Alloys with Different Carbon Contents during Solution Treatment

The microstructures of as-cast and heat-treated biomedical Co-Cr-Mo (ASTM F75) alloys with four different carbon contents were investigated. The as-cast alloys were solution treated at 1473 to 1548 K for 0 to 43.2 ks. The precipitates in the matrix were electrolytically extracted from the as-cast and heat-treated alloys. An M₂₃C₆ type carbide and an intermetallic σ phase (Co(Cr,Mo)) were detected as precipitates in the as-cast Co-28Cr-6Mo-0.12C alloy; an M₂₃C₆ type carbide, a σ phase, an η phase (M₆C-M₁₂C type carbide), and a π phase (M₂T₃X type carbide with a β-manganese structure) were detected in the as-cast Co-28Cr-6Mo-0.15C alloy; and an M₂₃C₆ type carbide and an η phase were detected in the as-cast Co-28Cr-6Mo-0.25C and Co-28Cr-6Mo-0.35C alloys. After solution treatment, complete precipitate dissolution occurred in all four alloys. Under incomplete precipitate dissolution conditions, the phase and shape of precipitates depended on the heat-treatment conditions and the carbon content in the alloys. The π phase was detected in the alloys with carbon contents of 0.15, 0.25, and 0.35 mass pct after heat treatment at high temperature such as 1548 K for a short holding time of less than 1.8 ks. The presence of the π phase in the Co-Cr-Mo alloys has been revealed in this study for the first time.     

碳/碳复合材料的渗硅抗氧化复盖层

在碳/碳复合材料上渗硅可得到碳化硅复盖层。对不同渗硅温度和时间下得到的碳化硅层进行破坏性试验。实验指出,有碳化硅复盖层保护下的碳/碳复合材料,其抗氧化性能提高约2个数量级。     

碳热还原/氮化合成氮化硅工艺中碳化硅生成的分析

碳热还原/氮化合成氮化硅在Si O2∶C=1∶4.5(摩尔比)、1 425~1 475℃、氮气中添加10 vol%氢气气氛、气体流量1 L/min条件下进行。生成物各相通过XRD定性分析。实验结果及热力学分析表明二氧化硅-碳-氮气反应体系中,氮化硅和碳化硅在常用温度区间内的生成趋势差别小;碳化硅成核在较高温度趋势较强,但在整个温度区间与氮化硅成核趋势均较强且差别细微;氮化硅晶体生长反应为控制步骤。在碳热还原/氮化工艺中控制Si3N4和Si C生成的边界温度并不明显,碳化硅的生成不可避免。     

Silicon Carbide Formed in Mixtures of Silicon with Carbon in Various Structural Modifications Under Shock Compression

Powder Metallurgy and Metal Ceramics - The interaction of silicon with carbon in various structural modifications under shock compression in cylindrical recovery fixtures was studied. X-ray...     

Secondary Silicon Carbide Formed in the Interaction of Nanosized Silicon Carbide with Iron Oxide

The characteristics of superfine powder composites formed in the interaction of nanosized silicon carbide with iron oxide in vacuum and argon at 1200 and 1400°C, respectively, are analyzed. Silicon carbide (β-SiC), iron silicide and carbide, silicon oxide, and silicon oxynitride are main components of the powder composites. The lattice parameter of SiC in the powder composites synthesized in the SiC–Fe2O3 system is determined. In the interaction in the SiC–Fe2O3 powder mixture in vacuum, secondary SiC is synthesized with a lattice parameter that corresponds to the standard parameter for cubic β-SiC. The interaction in an argon atmosphere is accompanied by the synthesis of secondary SiC with a decreased lattice parameter. The minimum lattice parameter (0.4336 nm) is 0.6% smaller than the standard parameter for cubic β-SiC. The morphology of the powder composite synthesized in the SiC–Fe2O3 system is studied. The average particle size of the powder composite decreases with increasing weight content of secondary SiC.     

含金属硅的碳砖材料固定碳含量的分析

采用不同方法测定了微孔碳砖、半石墨碳砖等碳素材料中的固定碳含量，结合对砖结构的分析，认为现有的分析标准与方法难以准确测定加有金属硅粉或碳化硅粉碳砖中的固定碳含量，因此在验收类似产品时，作为产品技术指标考核的固定碳含量难以准确测定。     

碳、硅铁及碳化硅对白钨矿还原动力学的影响

在实验室用15 kW碳管炉进行碳粉、硅铁粉(75％Si)、碳化硅粉对白钨矿粉(67．25％WO3)还原动力学影响的研究。结果表明,碳还原白钨矿的反应级数为二级,反应表观活化能为234．6 kJ／mol;碳在较低温度下,反应性能差,当温度达到1 400℃时,反应剧烈;随温度升高,硅铁的还原性能比较平稳,反应产生SiO₂,使渣量增加;碳化硅高温反应性能好(≥1 400℃);碳和硅铁适合较低合金化率(3％W),碳化硅适宜用于较高的合金化率(≥5％W)。     

Structurization of Reaction-Sintered Silicon Carbide Modified by Chromium Carbide

Powder Metallurgy and Metal Ceramics - The structurization and phase composition of reaction-sintered silicon carbide (RSSC) modified by chromium carbide are examined. When hexagonal silicon...     

高性能非均匀结构硬质合金的制备及其形成机理研究

硬质合金作为脆性材料存在韧性与硬度的固有矛盾,生产出硬度和韧性匹配良好的硬质合金,提高硬质合金的性能是当前研究热点之一。研究采用超粗、中、纳米3种不同的WC颗粒粉末,通过适当的球磨工艺及烧结工艺,制备出晶粒呈双尺度的非均匀硬质合金。研究了烧结温度对合金性能的影响,合金制备过程的组织形成机理,合金裂纹扩展的特点及断口形貌特征。结果表明:超粗、中、纳米WC颗粒粉末按照一定的质量比例配比,烧结温度为1 450℃时,制备出的非均匀硬质合金细晶粒均匀地分布于粗晶粒周围,其硬度为1 080 HV30,抗弯强度为2 690 MPa,断裂韧性为25.0 MPa·m1/2,制备的硬质合金材料的综合性能达到最优的平衡。     

Vanadium Defects Formation Mechanism in Undoped GaN Grown on Silicon

V defects in GaN layer grown on Si (111) using metalorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometer (EDS). Dislocations are the origination of V defects. Stress field around dislocations induce the concentration of C atoms, furthermore, slow growth rate on those {10-11} planes are suggested as being responsible for the initiation of V defects. The formation mechanism of V defects was discussed.     

Silicon Carbide Formation Enhanced by In-Situ-Formed Silicon Nitride: An Approach to Capture Thermal Energy of CO-Rich Off-Gas Combustion

Metallurgical and Materials Transactions B - Carbothermic smelting of ores to produce metals or alloys in alternating current open/semiclosed and closed submerged arc furnaces, or in closed direct...     

电渣重熔H13钢中一次碳化物形成机制

 H13热作模具钢在电渣重熔过程中会在凝固末端形成粗大的碳化物及氮化物,由于生成温度高,热稳定性好,会保留到最终热处理状态,对钢材的性能产生严重影响。应用偏析模型计算并说明了凝固过程生成粗大的共晶碳化物和氮化物的可能,当固相率达到0.82时由残余液相生成TiN,随着温度进一步下降在接近凝固终点时生成VC0.88,由于碳化物中固溶了其他合金元素,认为生成的VC0.88的活度不为1,试验检测的碳化物合金元素含量与理论假设基本吻合。对粗大的碳氮化物的特点及细化减少碳化物进行简单讨论。     

Production Technology Features for Aluminum Matrix Alloys with a Silicon Carbide Framework

Metallurgist - Currently, good mechanical properties and a high level of thermal stability of aluminum alloy components with a composite matrix attract considerable interest for use in aerospace...     

一种钢结硬质合金的碎裂机理研究

用扫描电镜、X-射线衍射能谱和金相显微镜等分析方法,对以TiC为硬质相的一种钢结硬质合金,在焊接和使用过程中产生裂纹和碎片的机理进行了研究,得出了合金的组织结构为非奥氏体时,是导致碎裂的主要原因。从而为改善合金性能和改进制作工艺与技术提供了理论依据。     

2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation

Under electron beam irradiation, the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed. The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.     

SiC复相陶瓷的强化增韧趋势

SiC陶瓷因其具有优良的性能而广泛应用于军事和民用领域.但陶瓷固有的脆性严重影响了其作为结构材料的应用潜力,因此sic陶瓷的强化增韧成为了近年来研究的热点.综述了siC基复相陶瓷的几种主要强化增韧方式,讨论了其强化增韧机制.采用纳米颗粒、晶须协同强化增韧和特殊技术制备纳米复相陶瓷将是提高SiC基陶瓷性能的有效途径.     

Structural Changes during Milling of Silicon Carbide

The kinetics of milling and structural changes during milling of commercial silicon carbide powder in a ball mill lined with hard alloy are studied. Data are provided for the specific surface, x-ray patterns, and infrared spectra. It is shown that milling kinetics are described best of all by an exponential relationship and that milling of silicon carbide powder is accompanied by changes in polytype composition. The x-ray patterns and infrared spectra obtained make it possible to assume that during milling the 15R polytype content in the powder composition decreases while the content of structures with less layering (the 4H polytype and -SiC) increases; in this case the number of absorption bands in the infrared spectra decreases.     

Self-Propagating High-Temperature Synthesis of Silicon Carbide Nanofibers

Russian Journal of Non-Ferrous Metals - The results of investigations into the organization of the synthesis of silicon carbide fibers in the gas phase using silicon powder, an energy additive of...