Sb对过共晶Mg-4.8%Si合金中Mg_2Si初晶变质的影响

利用Mg-20%Sb中间合金对过共晶Mg-4.8%Si合金进行变质处理,考察Sb的含量对Mg2Si初晶变质效果(主要包括形态和尺寸)的影响规律,并讨论其变质机制。结果表明:Sb的加入量是决定其能否有效变质过共晶Mg-4.8%Si合金中Mg2Si初晶的重要因素;在未变质的过共晶Mg-Si合金中,Mg2Si初晶以粗大的树枝晶状为主;当Sb加入量低于0.8%(质量分数)时,Mg2Si初晶形态无明显改善,其平均尺寸略有降低;当Sb加入量达到并超过1.2%后,Sb才能有效变质过共晶Mg-4.8%Si合金中Mg2Si初晶,且Mg2Si初晶呈细小的颗粒状弥散分布,其平均尺寸迅速减小;其变质机制应与残留在熔体中弥散分布的Mg3Sb2粒子作为Mg2Si初晶的形核核心有关。     

Sr对过共晶Mg-Si合金中初生Mg2Si相变质的影响

利Mg-20%Sr间合金对过共Mg-Si合金进行变质处理,对比研究了碱土元素Sr加入量对Mg2Si初晶变质效果(主要包括形态和尺寸)的影响规律,并讨论其变质机制.研究结果表明:碱土元素Sr对过共晶Mg-Si合金中的Mg2Si初晶可有效变质.随着Sr含量的增加,Mg2Si初晶的平均尺寸和尺寸分布范围均逐渐降低,其形态由粗大树枝状晶、细小树枝晶、非规则外形颗粒到规则外形颗粒逐渐过渡.当Sr含量达到2.0%,此Mg2Si初晶主要呈现为规则外形,平均尺寸为50μm左右.其变质机理应主要与碱土元素富集于Mg2Si相生长表面并抑制优先生长晶向的生长有关.     

Sr对Mg-4%Si合金中Mg2Si的变质作用

研究Sr对过共晶Mg-4%Si（质量分数）合金中Mg2Si相的变质作用与机理。Mg-4%Si合金中存在多面体形初生Mg2Si相与汉字状共晶Mg2Si相。添加Al-10%Sr可以明显细化初生Mg2Si相,同时可以将共晶Mg2Si相由汉字状变质为多面体状或者纤维状。对初生Mg2Si相的细化作用主要是由凝固过程中含Sr颗粒的异质形核作用引起的,而对共晶Mg2Si相的变质作用是由在凝固过程中熔体中的Sr原子在Mg2Si晶体生长表面富集,从而改变了其生长优势所致的。     

Effects of ZnS modification on primary Si in hypereutectic Al-Si alloy

A new modifying agent, ZnS, was used as a refiner to modify primary silicon in hypereutectic AlSi alloy. The factors affecting the modification results, including addition level of ZnS and holding time, were investigated. The results showed that the average size of the most effectively modified primary silicon was 28.5 μm when the ZnS mixed powder addition was 0.15 wt.% with a holding time of 10 min. More important, the average size of primary silicon could remain below 40 μm despite the holding time extending to 120 min, which means ZnS is a promising modifying agent of primarySi in industrial applications.     

The role of Mg2Si formation in the hydrogenation of Mg film and Mg nanoblade array on Si substrates

In this paper, both an Mg film and an Mg nanoblade array have been first fabricated directly on Si substrates and hydrogenated under 20 bar hydrogen pressure at temperatures ranging from 200 °C to 350 °C. It is found that Mg₂Si alloy starts to form at T = 200 °C in both the Mg samples, which produces a two-layered structure in the hydrogenated films with the bottom dense layer of Mg₂Si. To prevent Mg alloying with Si, a layer of 200 nm thick Ti film was deposited in between the Mg samples and Si substrates as a diffusion barrier, and their hydrogenation results show that Mg₂Si formation is suppressed greatly and even eliminated in nanoblades, though Mg₂Si hillock defects are observed in the hydrogenated films, which could be formed progressively through the pinholes in the Ti film. To improve the diffusion barrier, a unique structure, consisting of layers of Ti nanorod array and Ti film, has been designed for Mg-based nanostructure deposition. The hydrogen cycling study demonstrates that the structure of 450 nm Ti nanorods on 1 μm Ti film can endure enough number of cycles for the hydrogen storage kinetic and thermodynamic study of film-based Mg nanostructures with/without nanocatalyst, and thus one can gain a fundamental understanding of hydrogen interacting with Mg intrinsic nanostructures and nanocatalysts.     

超声波对原位Mg2Si/Al复合材料中初生Mg2Si形态的影响

采用光学显微镜和场发射扫描电镜,研究超声波对原位 Mg2Si/Al 复合材料中初生 Mg2Si 形态的影响。研究结果表明：超声波处理使初生Mg2Si的晶粒尺寸从150μm降低到20μm,初生Mg2Si形态发生改变。在二维形貌中,未实施超声波振动处理的初生Mg2Si晶粒生长为含有空腔的粗大颗粒,共晶组织生长于其中,相应的三维形态为含有漏斗状空腔的八面体和十四面体。超声波处理后的初生Mg2Si晶粒变成细小、实心三维形态的颗粒,颗粒棱角已发生钝化效应。     

超声波对原位Mg_2Si／Al复合材料中初生Mg_2Si形态的影晌

采用光学显微镜和场发射扫描电镜,研究超声波对原位Mg2Si／A1复合材料中初生Mg_2Si形态的影响。研究结果表明：超声波处理使初生Mg2Si的晶粒尺寸从150μm降低到20μm,初生Mg_2Si形态发生改变。在二维形貌中,未实施超声波振动处理的初生Mg_2Si晶粒生长为含有空腔的粗大颗粒,共晶组织生长于其中,相应的三维形态为含有漏斗状空腔的八面体和十四面体。超声波处理后的初生Mg_2Si晶粒变成细小、实心三维形态的颗粒,颗粒棱角已发生钝化效应。     

Centrifugal casting processes of manufacturing <Emphasis Type="Italic">in situ</Emphasis> functionally gradient composite materials of Al-19Si-5Mg alloy

Cylindrical components of in situ functionally gradient composite materials of Al-19Si-5Mg alloy were manufactured by centrifugal casting. Microstructure characteristics of the manufactured components were observed and the effects of the used process factors on these characteristics were analyzed. The results of observations shows that, in thickness, the components possess microstructures accumulating lots of Mg₂Si particles and a portion of primary silicon particles in the inner layer, a little Mg₂Si and primary silicon particles in the outer layer, and without any Mg₂Si and primary silicon particle in the middle layer. The results of the analysis indicate that the rotation rate of centrifugal casting, mould temperature, and melt pouring temperature have evidently affected the accumulation of the second phase particles. Also, the higher the centrifugal rotation rate, mould temperature, and melt pouring temperature are, the more evident in the inner layer the degree of accumulation of Mg₂Si and primary silicon particles is.     

熔体温度对Al-18Mg_2Si复合材料组织与性能的影响

研究了熔体温度对原位自生Al-18Mg_2Si(质量分数,%)复合材料组织和力学性能的影响。结果表明:随着熔体温度的提高,Al-18Mg_2Si复合材料中,初生Mg_2Si由粗大的树枝状变成多边形状、块状,有的成为颗粒状。熔体温度为870℃时,初生Mg_2Si最细小,平均晶粒尺寸为12μm(形状因子最大);超过870℃后,晶粒尺寸略有增大(形状因子减小)。随着熔体温度的提高,共晶Mg_2Si由片层状变为颗粒状,而后又变成颗粒状和棒状的混合组织,共晶团尺寸先减小后增大。复合材料的抗拉强度、延伸率、硬度随熔体温度的提高先增大后减小,并在870℃过热时,力学性能达到最佳值。DTA分析表明,随着熔体温度的提高,合金的凝固开始温度先降低后升高,形核过冷度呈先增大后减小的变化趋势。熔体温度达到870℃时,形核过冷度最大,复合材料的硬度最大,耐磨性最好。     

Improvement of the electrochemical hydrogen storage performance of Mg2Ni by the partial replacements of Mg by Al, Ti and Zr

Mg₂Ni, Mg_1.5Al_0.5Ni, Mg_1.5Zr_0.5Ni, Mg_1.5Ti_0.5Ni, Mg_1.5Zr_0.25Al_0.25Ni, Mg_1.5Zr_0.25Ti_0.25Ni and Mg_1.5Ti_0.25Al_0.25Ni alloys were synthesized by mechanical alloying and their electrochemical hydrogen storage characteristics were investigated. X-ray diffraction studies showed that while Al was retarding, Zr and Ti were facilitating the amorphization of Mg₂Ni phase. The initial discharge capacities of Mg_1.5Ti_0.5Ni, Mg_1.5Zr_0.5Ni and Mg_1.5Al_0.5Ni alloys were 414, 322 and 166 mA h g⁻¹, respectively. Although Mg_1.5Al_0.5Ni alloy had very low initial discharge capacity, the capacity retaining rate of this alloy was much better than those of Ti- and Zr-including alloys. The potentiodyanamic polarization experiments in 6 M KOH solution presented that Mg was passive and Ni was immune in the charge/discharge potential range (−1.0 V_Hg/HgO and −0.5 V_Hg/HgO). At the same conditions Ti and Zr had moderate, and Al had extremely higher dissolution rates. The analysis by the electrochemical impedance spectroscopy revealed that the increase in the charge transfer resistance of Mg_1.5Al_0.5Ni alloy was relatively low with the increase in depth of discharge. This observation was attributed to the formation of the porous unstable Mg(OH)₂ layer due to the high rate dissolution of the disseminated Al₂O₃ and thus the exposition of the underlying electro-catalytically active Ni sites. The charge transfer resistance of Mg_1.5Ti_0.5Ni alloy increased sharply with the increase in depth of discharge possibly due to the stabilizing effect of Ti-oxide on Mg(OH)₂. The presence of Ti-oxide, however, was predicted to make Mg(OH)₂ barrier layer more penetrable by hydrogen atoms, since the increased stability of the surface layer the cyclic stability of Mg_1.5Ti_0.5Ni alloy was relatively satisfactory.     

强磁场下电磁振荡对Al-Si过共晶合金凝固中初生硅分布和形貌的影响

研究了强磁场与交变电流复合作用产生的振荡对Al-18%Si合金中初生硅分布和形貌的影响规律.结果表明,磁场强度较小时,初生硅发生偏聚现象;随着磁场强度的增大(10 T),初生硅的偏聚现象逐渐减小至消失,并且随着振荡力的增大,初生硅由星瓣状向板条状和近颗粒状转变.同时,分析了初生硅的迁移行为,发现磁场下颗粒迁移的终端速度随颗粒尺寸的减小以及磁场强度的增大而降低.理论分析与实验结果相符.     

合金元素对Mg-Al-Si系镁合金中Mg2Si相形貌影响的研究进展

合金化和微合金化作为变质Mg-A1-Si系镁合金中汉字状Mg2Si相的一种工艺手段,目前已引起国内外的广泛关注和高度重视,并对此开展了大量的研究。本文综述了合金元素变质Mg-Al-Si系耐热镁合金中汉字状Mg2Si相的研究进展,尤其是Al、Si、Sb、Ca、P、RE和Sr等合金元素对汉字状Mg2Si相形貌的影响及其变质机理,指出了目前还存在的问题,并对今后的发展进行了展望。     

脉冲磁场与变质处理对20Mg2Si/Al复合材料中初生Mg2Si相的影响

对比研究了未处理、脉冲磁场处理及脉冲磁场-变质剂复合处理对20Mg2Si/Al复合材料中初生Mg2Si相形貌和分布的影响,同时研究了复合处理条件下,不同磁场电压和频率对初生Mg2Si相的影响。结果表明,磁场处理和复合处理条件下,Mg2Si相尺寸均有所减小;试样从心部到边部,Mg2Si相体积分数逐渐增加,呈梯度分布,但复合处理后,Mg2Si相的梯度分布效果减弱。当磁场电压在0~300V范围内或磁场频率在1~10Hz范围内,随着磁场电压或频率增加,Mg2Si相的尺寸均先增加后减小,转折点分别为200V和5Hz,其梯度分布效果总体上逐渐减弱。试样耐磨性和硬度的变化规律与Mg2Si相的体积分数基本保持一致。     

Thermoelectric properties of Sc- and Y-doped Mg2Si prepared by field-activated and pressure-assisted reactive sintering

Sc- and Y-doped-Mg₂Si samples were reactively sintered by the field-activated and pressure-assisted synthesis (FAPAS) method. The incorporation of these rare-earth elements in this silicide resulted in an n-type semiconductor. The addition of Sc and Y had no discernable effect on the lattice constant of Mg₂Si. The average grain size of the Y-doped Mg₂Si was about 2 μm, which was smaller than that of the sintered pure Mg₂Si. The power factor of samples doped with 2500 ppm Sc was consistently higher than that of pure Mg₂Si in the temperature range of 300-550 K. Similarly, the power factor of 2000 ppm Y doped Mg₂Si samples was higher than that of pure Mg₂Si over the temperature range of 300-675 K; the highest value being about 2.2 × 10⁻³ W m⁻¹ k⁻² at 468 K. This value is about two times that of the undoped Mg₂Si at the same temperature. The thermal conductivity of Mg₂Si doped with 2000 ppm Y was 80% of that of pure Mg₂Si. The highest figure of merit (ZT) for the Y doped (2000 ppm) samples was 0.23 at 600 K which was higher by a factor of 1.6 than the corresponding value of pure Mg₂Si at the same temperature. The results demonstrate the benefits of doping of Mg₂Si with Sc and Y in enhancing its thermoelectric properties.     

SiO2增加铝合金交流A-TIG焊熔深的机理

采用单组元活性剂进行铝合金交流A-TIG(Activating flux TIG)焊时,SiO2增加熔深最明显,对其增加熔深的机理进行了研究.进行正散焦真空电子束焊试验,SiO2对焊缝成形几乎没有影响;进行系列直流正接A-TIG焊试验,研究了活性剂对电弧的影响,发现SiO2使得氧化膜厚度增加,电弧极性区收缩,弧柱区扩展,电弧电压升高;进行氦气保护交流A-TIG焊试验,发现SiO2使活性剂或金属蒸发的区域变窄且蒸发量变小,熔池表面凹陷,并且在焊接过程中SiO2涂层始终存在于熔池表面,只在熔池凹陷中央区域出现很窄的裂缝,蒸气主要集中在电弧中下部.认为电弧极性区收缩和热输入增加是SiO2增加铝合金交流A-TIG焊熔深的主要机理.