掺铒光纤放大器泵浦源用980nm量子阱激光器

我们利用分子束外延（ＭＢＥ）方法研制出了高质量的ＩｎＧａＡｓ／ＧａＡｓ／ＡＩＧａＡｓ应变量子阱激光器外延材料，其最低的阈值电流密度可达到１４０Ａ／ｃｍ２，激发波长在９８０ｕｒｎ左右．通过脊型波导结构的制备，获得了高性能的适合于掺铒光纤放大器用的９８０ｕｒｎ量子阱激光器泵浦源，其典型的阈值电流和外微分量子效率分别为１５ｍＡ和０．８ｍＷ／ｍＡ，基横模的输出功率大于８０ｍＷ，器件在５０℃，８０ｍｗ的恒功率老化实验表明，器件具有较好的可靠性．通过与掺铒光纤的耦合，其组合件出纤功率可达６０ｍＷ以上．     

大功率GaInP/AlGaInP半导体激光器

制备了大功率实折射率GaInP/AlGaInP压应变分别限制量子阱激光器.所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到.制备的激光器具有双沟脊波导结构,条宽和腔长分别为3和900μm,前后端面分别蒸镀5%的增透膜和95%的高反膜.分析了室温连续激射时激光器的光电输出性能.阈值电流的典型值为32mA,光学灾变阈值为88mW,功率为80mW时的工作电流为110mA,斜率效率为1W/A,串联电阻为3Ω.基横模光输出功率可达60mW,60mW时的平行结和垂直结的远场发散角分别为10°和32°,激射波长为658.4nm.器件的内损耗为4.1cm-1,内量子效率达80%,透明电流密度为648A/cm2.     

大功率GaInP/AlGaInP半导体激光器

制备了大功率实折射率GaInP/AlGaInP压应变分别限制量子阱激光器.所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到.制备的激光器具有双沟脊波导结构,条宽和腔长分别为3和900μm,前后端面分别蒸镀5%的增透膜和95%的高反膜.分析了室温连续激射时激光器的光电输出性能.阈值电流的典型值为32mA,光学灾变阈值为88mW,功率为80mW时的工作电流为110mA,斜率效率为1W/A,串联电阻为3Ω.基横模光输出功率可达60mW,60mW时的平行结和垂直结的远场发散角分别为10°和32°,激射波长为658.4nm.器件的内损耗为4.1cm-1,内量子效率达80%,透明电流密度为648A/cm2.     

InGaAs/GaAs/AlGaAs应变量子阱激光器

优化设计了既能实现较小垂直方向远场发散角,又能降低腔面光功率密度的ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变层量子阱激光器,并计算了该结构激光器实现基横模工作的脊形波导结构参数。利用分子束外延生长了ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变量子阱激光器材料并研制出基横模输出功率大于１４０ｍＷ,激射波长为９８０ｎｍ的脊形波导应变量子阱激光器,其微分量子效率为０．８Ｗ／Ａ,垂直和平行结平面方向远场发散角分别为２８°和６．８°     

1.3kW拉曼光纤激光器

<正>近年来,高功率光纤激光器发展迅速。1μm波段对应的掺镱光纤激光器,近衍射极限输出功率可达20kW,多横模输出功率可达100kW。此外,2μm波段的掺铥光纤激光器和1.5μm波段的掺铒光纤激光器输出功率分别达到了1kW和0.3kW量级。尽管如此,这些光纤激光器的输出波长,因稀土离子能级跃迁的限制,仅能覆盖有限的光谱范围。基于光纤中受激拉曼散射效应的拉曼光纤激光器是拓展光纤激光器波长范围的有效手段,目前报导的最高功率为数百瓦量级。     

半导体激光器、集成光学激光器

0103628高占空比、高功率线阵二极管激光器封装技术[刊]/唐淳//强激光与粒子束.—2000,12(5).—544～546(L) 0103629915-980nm 应变量子阱激光器新进展[刊]/徐遵图//功能材料与器件学报.—2000,6(3).—293～296(K)报道了915～980nm 半导体激光器的最新进展,宽条激光器输出功率为0.2～2.0W,最大输出功率大于5W;基横模脊形波导半导体激光器输出功率达400mW,水平和垂直方向远场发射角分别为7°和23°,组合件输出功率大于150mW。     

一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器

本文描述一种由MOCVD生长的GaAs/GaAlAs 分别限制单量子阱片子制作的锁相列阵大功率激光器.由十个单横模器件耦合而成的列阵器件,其阈值电流为67mA,线性输出功率大于500mW,微分量子效率达60％.列阵器件由强耦合区和弱耦合区构成,考察了强耦合区的几何结构对耦合模即输出远场分布的影响.     

采用光纤滤波器的高波长稳定性掺铒光纤光源

研究了双程后向结构掺铒光纤光源的平均波长对泵浦功率的赖性。实验结果表明,通过采用掺铒光纤滤波器以及选择合适的泵浦功率,平均波长随泵浦功率的变化能够降低到-9 ppm/mW。在-40~+60℃ 温度范围内,光纤光源的平均波长不稳定性小于33 ppm(峰峰值)。采用5 m 长的掺铒光纤、泵浦功率55mW 与泵浦波长974.2nm 时,光纤光源输出光波的谱宽达到17nm,功率达5.83mW。     

基于受激布里渊散射的可调谐多波长激光器

可调谐多波长布里渊掺铒光纤激光器将光纤中的SBS非线性放大同掺铒光纤的线性放大相结合得到室温稳定的多波长输出,具有波长间隔一致、线宽窄、功率谱相对平坦等优点。设计了一种基于光纤布拉格(FBG)反射的线性可调谐多波长布里渊掺铒光纤激光器。该线性腔激光器的一端利用光纤布拉格光栅作为反射镜,有效抑制了腔内自激模的影响,增加激光器输出波长数。布里渊泵浦信号进入布里渊增益介质之前经过掺铒光纤放大器的两次放大,降低了布里渊增益的阈值。该多波长激光器实现了1 530～1 560 nm之间30 nm可调谐范围的输出。在布里渊泵浦信号功率2 mW,980 nm泵源抽运功率60 mW情况下,1 540～1 554 nm范围内,获得了波长间隔0.088 nm的16个波长的输出。     

离子束刻蚀法制备大功率高效率650nm AlGaInP可见光激光器

用纯Ar离子束刻蚀方法制备出大功率高效率650nm实折射率AlGaInP压应变量子阱激光器.对偏角衬底,干法刻蚀可得到湿法腐蚀不能得到的高垂直度和对称台面.制备的激光器条宽腔长分别为4μm和600μm,前后端面镀膜条件为10%/90%.室温下阈值电流的典型值为46mA,输出功率为40mW时仍可保持基横模.10mW,40mW时的斜率效率分别为1.4W/A和1.1W/A.     

量子阱无序的窗口结构InGaAs/GaAs/AlGaAs量子阱激光器

对ＳｉＯ２薄膜在快速热退火条件下引起的空位诱导ＩｎＧａＡｓ／ＧａＡｓ应变量子阱无序和ＳｒＦ２薄膜抑制其量子阱无序的方法进行了实验研究。并将这两种技术的结合（称为选择区域量子阱无序技术）应用于脊形波导ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变量子阱激光器，研制出具有无吸收镜面的窗口结构脊形波导量子阱激光器。该结构３μｍ条宽激光器的最大输出功率为３４０ｍＷ，和没有窗口的同样结构的量子阱激光器相比，最大输出功率提高了３６％。在１００ｍＷ输出功率下，发射光谱中心波长为９７８ｎｍ，光谱半宽为１．２ｎｍ。平行和垂直方向远场发散角分别为７．２°和３０°     

Strained InGaAs quantum well lasers with small-divergence anglesfor high-power pump modules

Epitaxial structures were designed for high-power strained InGaAs/AlGaAs quantum well lasers with low vertical-divergence emitting angles. The vertical divergence angles achieved were down to ~20°. High power output 1.02 μm pump modules with well-designed strained quantum well lasers have been developed for a 1.3 μm band Pr⁺ -doped fibre amplifier. A maximum optical fibre output of 157 mW was obtained     

High power and low optical feedback noise AlGaAs single quantum well lasers

GaAs-AlGaAs single quantum well self-aligned lasers have been developed for optical disc recording. The lasers emitting at 834 nm have realised low optical feedback noise as well as high output power. The lasers have shown less than -130 dB/Hz relative intensity noise at 3 mW, and stable 50 mW operation (over 500 hours at 50 degrees C ambient).<>     

High output power single longitudinal mode graded index separateconfinement multiple quantum well InGaAs/InP distributed feedback (GRINSCH MQW DFB) lasers

A high continuous-wave (CW) output and high quantum efficiency of 1.5 μm-wavelength InGaAs/InP graded-index separate-confinement multiple-quantum-well DFB lasers were demonstrated. A threshold current of 45 mA with a maximum output power close to 100 mW and a quantum efficiency of 0.33 mW/mA was obtained. Single-frequency light output with power as high as 16 dBm (40 mW) was launched into a single-mode fiber     

Optical Properties of MQW Optical Waveguides in Electroabsorption MQW Modulator

ＯｐｔｉｃａｌＰｒｏｐｅｒｔｉｅｓｏｆＭＱＷＯｐｔｉｃａｌＷａｖｅｇｕｉｄｅｓｉｎＥｌｅｃｔｒｏａｂｓｏｒｐｔｉｏｎＭＱＷＭｏｄｕｌａｔｏｒＹｉＺｈｏｕＹａｎｇＹｕＹｉｘｉｎＣｈｅｎ（ＩｎｓｔｉｔｕｔｅｏｆＯｐｔｉｃｓ＆ＰｈｏｔｏｎｉｃｓＤｅｐａｒ...     

大功率及高转换效率2.1μm GaInSb/AlGaAsSb量子阱激光器

报道了激射波长为2.1 m 的GaInSb/AlGaAsSb双量子阱激光器。通过优化外延结构设计和欧姆接触,无镀膜的宽条激光器达到了9.8%的峰值功率转换效率,这比原来的值提高了1.5倍,室温下得到了615 mW的连续激射功率输出和1.5 W的脉冲激射功率输出。这些激光器的阈值电流密度低至126 A/cm2,斜率效率高达0.3 W/A。通过测试不同腔长的激光器,测得内损耗和内量子效率分别为6 cm-1和75.5%,均比原有器件有很大提升。激光器在连续工作3 000 h后,功率没有明显下降。     

具有线性GRIN结构GaAs/AlGaAs单量子阱激光器

采用ＭＯＣＶＤ 方法成功地研制了具有线性ＧＲＩＮ 结构ＧａＡｓ／ＡｌＧａＡｓ单量子阱激光器。该激光器的峰值波长为８１５～８２５ ｎｍ ,阈值电流为１３０ ｍ Ａ。工作电流在４８０ ｍ Ａ 时,单面连续输出光功率高达２００ ｍ Ｗ,且基本保持在单模工作状态。工作在９７０ ｍ Ａ 时,单面连续输出光功率为０．５ Ｗ。     

Room-temperature CW operation of GaAs-AlGaAs diode lasers on silicon-on-insulator wafers

GaAs-AlGaAs diode lasers have been fabricated on silicon-on-insulator wafers for the first time. Gain-guided graded-index separate-confinement heterostructure single-quantum-well (GRINSCH-SQW) lasers operated CW at room temperature with threshold current as low as 43 mA, differential quantum efficiency as high as 54%, and output power of more than 60 mW/facet. One device operated CW for 75 min at an output power of 1 mW/facet.<>     

High power and high efficiency operation of Al-freeInGaAs/GaInAsP/GaInP GRINSCH SQW lasers (λ≃0.98 μm)

High power and high quantum efficiency Al-free InGaAs/GaInAsP/GaInP GRINSCH SQW lasers emitting at 0.98 μm are reported. A CW output power as high as 580 mW and single lateral mode power up to 280 mW were achieved for the Al-free ridge waveguide lasers at room temperature. The lasers exhibited a high internal quantum efficiency of 99% and low internal waveguide loss of 3.2 cm^-1. A high characteristic temperature of 217 K and low threshold current density of 109 A/cm² were also obtained. The results are the best obtained for Al-free 0.98 μm pumping lasers     

Higher power InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers grown by three step MOVPE

The first demonstration of distributed feedback InGaAs-GaAs buried heterostructure strained quantum well lasers with In/sub 0.49/Ga/sub 0.51/P cladding layers entirely grown by a three step MOVPE process is reported. Uncoated distributed feedback buried heterostructure lasers with a pn InGaP current blocking junction on a p/sup +/-GaAs substrate show a low laser threshold of 3.2 mA and a high output power of 45 mW both measured CW at RT.<>