PECVD法低温淀积SiCx薄膜的防水汽扩散性能研究

外界水汽和离子的扩散对集成电路和传感器等器件的性能及使用寿命有很大影响，利用无机钝化材料阻挡水汽和离子的扩散是常用的提高器件寿命和稳定性的方法。本文采用PECVD方法在较低的衬底温度条件下淀积碳化硅薄膜，利用各种方法研究了碳化硅薄膜的防潮性能。实验证明，碳化硅薄膜是一种良好的水汽扩散阻挡材料，其防潮能力达到甚至超过了集成电路生产中常用的氮化硅薄膜。并且，低温碳化硅薄膜具有非常好的化学稳定性和抗刻蚀能力，在各种微加工工艺中有广泛的应用前景。     

PECVD法低温沉积SiGx薄膜的防水汽扩散性能研究

外界水汽和离子的扩散对集成电路和传感器等器件的性能及使用寿命有很大影响，利用无机钝化材料阻挡水汽和离子的扩散是常用的提高器件寿命和稳定性和方法。本文采用ＰＥＣＶＤ方法在较低的衬底温度条件下沉积碳化硅薄膜，利用各种方法研究了碳化硅薄膜的防潮性能。实验证明，碳化硅薄膜是一种良好的水汽扩散阻挡材料，其防潮能力达到甚至超过了集成电路生产中常用的氮化硅薄膜。并且，低温碳化硅薄膜具有非常好的化学稳定性和抗刻蚀     

PECVD法低温淀积SiC_x薄膜的防水汽扩散性能研究

外界水汽和离子的扩散对集成电路和传感器等器件的性能及使用寿命有很大影响 ,利用无机钝化材料阻挡水汽和离子的扩散是常用的提高器件寿命和稳定性的方法。本文采用PECVD方法在较低的衬底温度条件下淀积碳化硅薄膜 ,利用各种方法研究了碳化硅薄膜的防潮性能。实验证明 ,碳化硅薄膜是一种良好的水汽扩散阻挡材料 ,其防潮能力达到甚至超过了集成电路生产中常用的氮化硅薄膜。并且 ,低温碳化硅薄膜具有非常好的化学稳定性和抗刻蚀能力 ,在各种微加工工艺中有广泛的应用前景。     

等离子体增强化学气相低温沉积碳化硅薄膜及其性质研究

用等离子体增强化学气、相沉积（PECVD）方法,以CH4和SiH4为反应气体,在低电极温度（180℃）条件下制备了碳化硅薄膜．实验结果表明,低电极温度条件下沉积参数（反应气体流量比、反应气体压力、射频功率）的变化对薄膜的沉积和性质影响较大．制得的薄膜均匀性良好,其化学组成Si／C在0．72-4．0之间,具有（5-9）×109dyn／cm2的压应力．红外光谱结果证明,随着薄膜化学成分的变化,薄膜的结构也改变。同氮化硅薄膜相比,制得的碳化硅薄膜具有良好的抗溶液腐蚀性．     

蓝宝石衬底异质外延碳化硅薄膜反应机理研究

对宽禁带半导体材料碳化硅薄膜的异质外延工艺和反应机理进行了讨论，针对实验使用常压水平卧式反应室，分析了生长过程中气流流速分布、反应室内温度分布以及反应气体浓度分布，指出“汽相结晶”过程对薄膜生长区Si/C比例有很大影响，从而影响了碳化硅薄膜的生长速率，在SiC薄膜的生长过程中，对Si/C原子比例的控制一直是影响薄膜表面形貌和膜层掺杂浓度的重要因素。这很好地解释了薄膜生长过程中出现的异常现象。     

微波等离子体化学气相沉积法生长非晶碳化硅薄膜

利用SiH4(80%Ar稀释)和CH4作为源气体,通过改变源气体流量比、基片温度、沉积气压等参量,使用微波电子回旋共振化学气相沉积法生长非晶碳化硅薄膜。实验结果表明碳化硅薄膜沉积速率随气体流量比R(CH4/(CH4+SiH4))的增加而减小、随基片温度的升高明显减小、随沉积气压的增加先增大后减小。红外结构表明:在较低流量比R下,薄膜主要由硅团簇和非晶碳化硅两相组成,而当R>0.5时,薄膜的结构主要由非晶碳化硅组成,薄膜中键合的H主要是Si和C的封端原子。同时,沉积温度的升高使碳化硅薄膜中Si-H,C-C和C-H键的含量减少,而薄膜中Si-C含量明显增加且峰位发生了红移。薄膜相结构的转变是薄膜光学带隙变化的原因。     

微波电子回旋共振法沉积的非晶碳化硅薄膜结构和性能研究

非晶碳化硅薄膜的结构可调制性及化学稳定性使它可用作超低k多孔介电薄膜的扩散阻挡层.主要改变了SiH4(80%Ar稀释)和CH4气体流量比R{R=[CH4]/([CH4] [SiH4])},使用微波电子回旋共振化学气相沉积法制备了非化学计量比的非晶碳化硅薄膜(a-Si1-xCx∶H).薄膜沉积过程中放电等离子体的各基团行为由等离子体的发射光谱监测,而薄膜的结构与性能则由傅立叶变换红外光谱、紫外可见光谱等来表征.结果表明,在等离子体发射光谱中H、CH谱线强度随CH4流量的增加而增强,而SiH谱线强度则呈现相反的变化趋势.红外结构表明随着气体流量比R的增加,薄膜由富硅态向富碳态转变,薄膜结构的转变是薄膜光学带隙及其介电常数变化的根本原因.     

提高谷类可食性薄膜水汽阻碍性的有效途径

水汽阻隔性是谷类可食性薄膜重要特性之一，它直接影响到被包装食品在保存期内质量的变化。本文仅就提高谷类可食性薄膜水汽阻隔性的有效途径进行了一些研究。     

烹制新概念

在方便食品市场上,杜邦的 MylarOL 聚酯薄膜系列是十分著名的。Mylar 薄膜容易被加工、透明度好、容易印制、强度高而且耐高温。该系列包括涂层薄膜,其阻隔性和封口/剥离性甚佳,同时防水汽能力强,适合做烘烤和微波烘制食品包装的盖。     

PCVD法对碳化硅陶瓷的表面改性研究

利用等离子辉光放电化学气相沉积技术（ＰＣＶＤ），控制甲烷与磋烷质量流量比、硅烷与氨质量流量比，在碳化硅基体表面分别沉积上无定形碳化硅和氨化硅薄膜，研究其膜的组成、沉积工艺、厚度等对碳化硅陶瓷的强度改性影响．在一定的沉积条件下沉积的碳化硅薄膜可以使基体强度提高２０％达到８５０ＭＰａ，沉积氮化硅薄膜使强度提高３０％达到９００ＭＰａ，改性的效果很明显．     

交替频率PECVD方法沉积低应力氮化硅薄膜及其性质研究

用ＰＥＣＶＤ方法制备氮化硅薄膜,研究了射频频率对氮化硅薄膜的沉积和性质的影响。结果表明,在低频下（１００ＫＨｚ）制备的氮化硅薄膜密度较大,具有８ｘ１０９Ｐａ左右的压应力和较小的刻蚀速率;而高频（１３．５６ＭＨｚ）沉积的氮化硅薄膜密度较小,具体约２ｘ１０９Ｐａ的张应力,刻蚀速率较大。红外光谱表明,薄膜性质同薄膜中的氢原子成键情况有关。实验中利用高、低频交替沉积的方法,成功地制备了低应力（１０７Ｐａ）氮化硅薄膜。当加热到５００Ｃ时,应力较大的氮化硅薄膜会发生开裂（张应力）或拱起（压应力）。低应力的氮化硅薄膜能够承受７００Ｃ的温度,温度更高时,薄膜的完整性因氢溢出而破坏。     

Plasmachemische Gasphasenabscheidung – eine Technologie zur Deposition organischer und anorganischer Schichten. Plasma Enhanced Chemical Vapor Deposition – a Thin Film Technique for Organic and Inorganic Layers

Plasma enhanced chemical vapor deposition (PECVD) has a wide range of interest for thin films up to some μm thickness. It has widespread applications for high quality dielectric and semiconducting silicon alloys at deposition temperatures below 450 °C and pressures at 1 mbar on plane substrates and attracts growing attention for the surface modification of polymers. The PECVD takes advantages of the possibility to alter the film properties in a wide range easily, and the coatings can achieve a variety of useful properties unobtainable by other coating techniques. An environmentally friendly plasma chemical reactor etch cleaning of SiO_x, SiN_x and other film materials can be applied by changing the process gas and without breaking the vacuum. PECVD can be used in a fixed substrate and continuous substrate flow mode. An capacitively coupled parallel‐plate electrode assembly using radio‐frequency (RF) excitation of the discharge is most widely used for substrate areas up to a few square meters. Among the capacitively excitation an inductively and electromagnetically excitation at frequencies in the RF and UHF range has also succeeded in achieving a high rate PECVD. Two applications are presented to show the characteristics and the potential of this technique, the PECVD of semiconducting hydrogenated amorphous silicon, intrinsic or doped, with low power densities using monosilane as a source gas for solar cells, thin films transistors and digital image sensors and the plasma polymerisation of organosilicon protection layers employing the HMDSO monomer and high power densities for mirrors and lenses.     

Pulsed-radio frequency plasma enhanced chemical vapour deposition of low temperature silicon nitride for thin film transistors

The growth of low temperature silicon nitride using radio frequency (RF) plasma enhanced chemical vapour deposition (PECVD) is associated with high porosity and surface roughness due to the short surface diffusion length of adsorbed radicals during the deposition. In this work we present pulsed-RF PECVD as a means of achieving a film with smoother surface and reduced density of voids. The growth process and the longer surface diffusion length are discussed as the main reason behind improvement of film density while maintaining the substrate temperatures. The deposited films exhibit improved electrical performance with 72% reduction in breakdown probability compared with conventional continuous-wave RF PECVD films. A low interfacial defect density with a field effect mobility of 1.1 cm²/V.s and subthreshold slope of 0.3 V/dec, was achieved when used as a gate dielectric in thin film transistors.     

PECVD法低温制备二氧化硅薄膜(英文)

针对金属层间介质以及MEMS等对氧化硅薄膜的需求,介绍了采用等离子增强型化学气相沉积(PECVD)技术,以SiH4和N2O为反应气体,低温制备SiO2薄膜的方法.利用椭偏仪和应力测试系统对制得的SiO2薄膜的厚度、折射率、均匀性以及应力等性能指标进行了测试,探讨了射频功率、反应腔室压力、气体流量比等关键工艺参数对SiO2薄膜性能的影响.结果表明:SiO2薄膜的折射率主要由N2O/SiH4的流量比决定,而薄膜均匀性主要受电极间距以及反应腔室压力的影响.通过优化工艺参数,在低温260℃下制备了折射率为1.45～1.52、均匀性为±0.64%、应力在-350～-16MPa可控的SiO2薄膜.采用该方法制备的SiO2薄膜均匀性好、结构致密、沉积速率快、沉积温度低且应力可控,可广泛应用于集成电路以及MEMS器件中.     

Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications

The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness. When the RF power and substrate temperature were 300 watt and 200 degrees C, respectively, optical bandgap and photosensitivity, similar to the intrinsic a-Si:H film, were obtained. The Si-H stretching mode at 2000 cm(-1), which means a good quality of films, was found at all conditions. Although the RF power increased up to 400 watt, average of surface roughness got better, compared to a-Si:H films deposited by the conventional PECVD method. These results show the potential for developing the solar cells using ICP-CVD, which have the relatively less damage of plasma.     

PECVD下基底温度对SiC薄膜形态、成分及生长速度的影响

在单晶Si和多晶Cu基底表面上使用等离子体增强化学气相沉积(PECVD)方法沉积了SiC薄膜. 通过高分辨透射电子显微镜(HRTEM)、X射线光电子能谱仪(XPS)及扫描电子显微镜(SEM)研究基底温度对SiC薄膜成分、结构及生长速度的影响规律。结果表明: 在60~500℃基底温度下制备的SiC薄膜均为非晶态薄膜, 薄膜的生长速度随基底温度的升高而线性降低, 并且在相同沉积条件下, 薄膜在Si基底上的生长速度要高于Cu基底。此外, 薄膜中的硅碳原子比随基底温度的升高而降低, 当基底温度控制在350℃左右时, 可以获得硅碳比为1:1较理想的SiC薄膜。     

High-rate deposition and mechanical properties of SiOx film at low temperature by plasma enhanced chemical vapor deposition with the dual frequencies ultra high frequency and high frequency

A high efficiency, high-rate deposition process was developed for silicon oxide films using plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF) power with high frequency (HF) bias. The effect of the UHF input power with HF bias on the anti-scratch properties of the silicon oxide films was examined. The hybrid plasma process was also examined by advanced plasma source. Dissociation of the octamethylycyclodisiloxane (OMCTS) precursor was controlled by the plasma processing parameters. SiO_x films were deposited on polycarbonate substrates by PECVD using OMCTS and oxygen carrier gas. The rate of SiO_x film deposition increased with increasing input energy. The plasma was analyzed by optical emission spectroscopy. The deposition rate was characterized using an alpha-step. The mechanical properties of the coatings were examined using a nano-indenter and pencil hardness measurements. The chemical properties of the coatings were examined by Fourier transform infrared spectroscopy. The deposition rate of the SiO_x films was controlled by the dissociation of OMCTS using the appropriate intensity of excited neutrals, ionized atoms and input UHF input power with HF bias at room temperature.     

PECVD法制备非晶硅薄膜及光电性能研究

采用等离子体增强化学气相沉积（PECVD）方法在玻璃衬底上制备出非晶硅薄膜,利用正交试验法对射频功率、气体总压、硅烷比例、沉积时间、退火温度、退火时间因素进行了研究,对透过率和电阻率进行了分析,结果表明,采用PECVD法成功制备出非晶硅薄膜。正交实验表的分析得知,气体总压对透过率影响最大;硅烷比例对电阻率影响最大。制备非晶硅薄膜的优化条件为：射频功率30W、气体总压100Pa,硅烷5％、沉积时间5min、退火温度300℃、退火时间45min。非晶硅薄膜的光透过率93．18％,电阻率为13．238kΩ·cm。     

Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition in a CH₄ gas flow rate of 1 sccm, and the influence of the gas flow rates of SiH₄ and H₂ gases on the film structure and properties were investigated. In the case of a H₂ gas flow rate below 100 sccm, the SiC:H films obtained in SiH₄ gas flow rates of 3 and 4 sccm were amorphous. On the other hand, when the H₂ gas flow rate was above 150 sccm, SiH₄ gas flow rates of 4 and 3 sccm resulted in a Si-crystallite-embedded amorphous SiC:H film and a nanocrystalline cubic SiC film, respectively. It was found that gas flow rates were important parameters for controlling film structure.