共查询到20条相似文献,搜索用时 62 毫秒
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从热疲劳故障的角度论述了倒装芯片底部填充的必要性,介绍了倒装芯片底部填充的参数控制。通过正确的底部填充,可提高倒装芯片组装的成品率和可靠性。 相似文献
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PericlesA.Kondos PeterBorgesen 《中国电子商情》2004,(5):22-26
贴片前涂敷非流动型底部填充剂,既消除了免清洗焊剂残留物所带来的可靠性问题,又减少甚至根除了密封剂的固化时间,提高了生产效率。当然,为实现其优质工艺,必须对底充胶涂敷、贴片以及组件再流焊等因素予以认真考虑。 相似文献
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《现代表面贴装资讯》2004,(2):69-71
20世纪90年代以来,移动电话、个人数字助手(PDA)、数码相机等消费类电子产品的体积越来越小,工作速度越来越快,智能化程度越来越高。这些日新月异的变化为电子封装与组装技术带来了许多挑战和机遇。材料、设备性能与工艺控制能力的改进使越来越多的EMS公司可以跳过标准的表面安装技术(SMT)直接进入先进的组装技术领域,包括倒装芯片 相似文献
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<正> 1 引言 20世纪90年代以来,移动电话、个人数字助手(PDA)、数码相机等消费类电子产品的体积越来越小,工作速度越来越快,智能化程度越来越高。这些日新月异的变化为电子封装与组装技术带来了许多挑战和机遇。材料、设备性能与工艺控制能力的改进使越来越多的EMS公司可以跳过标准的表面安装技术(SMT)直接进入先进的组装技术领域,包 相似文献
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板上芯片技术(Chip-on-Board简称COB),也称之为芯片直接贴装技术(Direct Chip Attach简称DCA),是采用粘接剂或自动带焊、丝焊、倒装焊等方法,将裸露的集成电路芯片直接贴装在电路板上的一项技术。倒装芯片是COB中的一种(其余二种为引线键合和载带自动键合),它将芯片有源区面 相似文献
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上官东恺 《现代表面贴装资讯》2008,(1):38-40
倒装芯片装配是能否实现产品微型化能力的关键。我们以前己经针对一些倒装芯片的互连形式开展了研究工作,包括:各向异性的导电簿膜或者焊膏,以及金-金热声波键合。目的主要是瞄准间距为0.200和0.250mm的倒装芯片的焊接装配工作。对于倒装芯片来说有二种施加焊剂的方法:焊剂沉浸方式和对基板进行焊剂喷射的方式。我们对传统的SMT贴装设备(可以满足倒装芯片装配的价格提升的高档货)所具有的贴装准确性展开了研究,并且对所获得的结果进行讨论。 相似文献
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对于倒装芯片在很多文献中都有报道,这种技术自1960年代末IBM公司将其应用到陶瓷印制板上以来,其被快速地应用于各个不同的领域,而且大有继续向前发展的趋势。究竟是什么原因使其在市场上占有强大的优势呢?由于倒装芯片具有诸多的优点,特别是成本低。 相似文献
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当前,倒装芯片封装技术已经成为相关领域的主流方法,但由于芯片、基板、焊球、下填料等材料具有差异化的热膨胀系数,导致封装过程中极易引入热应力,不利于保持芯片的性能及其可靠性。采用有效方法能够对倒装封装过程中所产生的应力进行检测,对于完善封装参数,提高产品可靠性,具有重要的现实意义。 相似文献
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Packaging of 90-nm Cu/Low-K chips presents a serious challenge, which requires an advanced ceramic flip chip solution. Finer
Cu interconnects are expected to interact differently with the current underfill-to-die passivation stack-up structures used
for Al or previous Cu technology nodes especially in system level applications. Furthermore, the more porous and brittle-proned
advanced Low-K (K<3) dielectrics present additional process incompatibility problems such as stress-induced crackings and
delaminations. These reliability issues in various stress-relieving passivation structures and materials (i.e., Benzocyclobutene
(BCB) and single versus double SiOxNy passivations) have not been extensively studied. This study analyzes the effect of the
eight metal layer 90-nm Cu/Low-K flip chip devices through designed experiments using two relatively different underfill materials,
standard terminal pad and novel passivation structures, and JEDEC Level-3 reliability stressings: temperature cycling (TC),
highly accelerated stress testing (HAST), and high-temperature storage (HTS). Black Diamond Low-K and HiCTE ceramic substrates
are employed for the large package form factor. The active Si uses eutectic stencil-pasted SnPb bump and BGA balls with Ti/Ni-V/Al-Cu
reflectory thin film-deposited under bump metallurgy (UBM). It is found that the double passivation pad structures are less
susceptible to reliability damage for various types of underfills, although a single passivation with BCB coating combined
with an optimal underfill can also yield a similar favorable result. The metallurgical effect of delamination cracking, HiCTE
flip chip and stress-relieving passivation structures, and the underfill interface failure mode mechanism are examined by
functional testing, chemical deprocessings, scanning acoustic microscope (SAM), and scanning electron microscope (SEM)/energy-dispersive
x-ray (EDX). The presented results are significant for the development of flip chip packaging technologies for future advanced
Cu/Low-K generations. 相似文献
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We have studied two kinds of solder reactions between eutectic SnPb and Cu. The first is wetting reaction above the melting
point of the solder, and the second is solid state aging below the melting point of the solder. In wetting reaction, the intermetallic
compound (IMC) formation has a scallop-type morphology. There are channels between the scallops. In solid state aging, the
IMC formation has a layer-type morphology. There are no channels but grain boundaries between the IMC grains. Why scallops
are stable in wetting reactions has been an unanswered question of fundamental interest. We have confirmed that the scallop-type
morphology is stable in wetting reaction by re-wetting the layer-type IMC by molten eutectic SnPb solder. In less than 1 min,
a layer-type Cu6Sn5 is transformed back to scallops by the molten solder at 200 C. In analyzing these reactions, we conclude that the scallop-type
morphology is thermodynamically stable in wetting reaction, but the layer-type morphology is thermodynamically stable in solid
state aging, due to minimization of interfacial and grain boundary energies. 相似文献
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利用氧化铟易于溶于酸性溶液的性质,提出了在倒装焊接之前使用酸性溶液对铟柱进行酸洗.在未进行酸洗和进行酸洗的条件下,对比了样品在焊接之后的拉力以及在经过热循环后的盲元率,结果显示酸洗能够降低表面氧化层的影响,有效地改善倒装焊接的质量. 相似文献
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采用球栅阵列芯片尺寸封装技术和倒装芯片(Flip Chip,FC)技术构建了半桥集成电力电子模块(Integrated Power Electronics Module,IPEM),半桥FC-IPEM实现三维封装结构。采用阻抗测量法提取模块寄生电感和寄生电容,建立模块的寄生参数模型,对模块进行电气性能测试。结果表明:半桥FC-IPEM构成的同步整流Buck变换器输出滤波电感中的电流波动幅度小于0.6A。 相似文献
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