串联电容式RF MEMS开关设计与制造研究

介绍了一种串联电容式RF MEMS开关的设计与制造。所设计的串联电容式RF MEMS开关利用薄膜淀积中产生的内应力使MEMS桥膜向上发生翘曲,从而提高所设计的开关的隔离度,克服了串联电容式RF MEMS开关通常只有在1GHz以下才能获得较高隔离度的缺点。其工艺与并联电容式RF MEMS开关完全相同,解决了并联电容式RF MEMS开关不能应用于低频段(<10GHz)的问题。其插入损耗为-0.88dB@3GHz,在6GHz以上,插入损耗为-0.5dB;隔离度为-33.5dB@900MHz、-24dB@3GH和-20dB@5GHz,适合于3~5GHz频段的应用。     

RF-MEMS Capacitive Switches Fabricated Using Printed Circuit Processing Techniques

This paper presents radio frequency microelectromechanical systems (RF-MEMS) capacitive switches fabricated using printed circuit processing techniques. The key feature of this approach is the use of most commonly used flexible circuit film, Kapton E polyimide film, as the movable switch membrane. The physical dimensions of these switches are in the mesoscale range. For example, electrode area of a typical capacitive shunt switch on coplanar waveguide (CPW) is 2 mmtimes1 mm, respectively. A CPW shunt switch with insertion loss <0.4 dB and isolation >10 dB in the frequency range of 8 to 30 GHz is reported. K-band, Ku-band, and X-band high-isolation CPW shunt switches designed by inductive compensation of the switch down-position capacitance are also presented. Inductance compensation has been implemented by introducing inductive step-in-width junctions in the MEMS switch electrode. The K-band switch provides a maximum isolation value of 54 dB at 18 GHz. For the K-band switch, the insertion loss is less than 0.3-0.4 dB in the frequency range of 1-30 GHz and the isolation values are better than 20 dB in the frequency range of 12 to 30 GHz. The Ku-band switch provides a maximum isolation of 46 dB at 16.5 GHz. For the Ku-band switch, the insertion loss is less than 0.4-0.45 dB in the frequency range of 1-30 GHz and the isolation is greater than 20 dB in the frequency range of 12 to 22 GHz. The X-band switch provides a maximum isolation value of 32 dB at 10.6 GHz. The insertion loss is less than 0.25-0.3 dB in the frequency range of 1-18 GHz and the isolation is better than 20 dB in the frequency range of 8.5 to 13.5 GHz for the X-band switch. The measured typical pull-down voltage is in the range of 100-120 for this type of switches. These switches are uniquely suitable for monolithic integration with printed circuits and antennas on organic laminate substrates     

Design and simulation of a thermally actuated MEMS switch for microwave circuits

The design, modeling, and optimization of a novel, thermally actuated CMOS‐MEMS switch are presented in this article. This series capacitive MEMS switch solves the substrate loss and down‐state capacitance degradation problems commonly plaguing MEMS switches. The switch uses finger structure for capacitive coupling. The vertical bending characteristic of bimorph cantilever beams under different temperatures is utilized to turn the switch on and off. A set of electrical, mechanical, and thermal models is established, and cross‐domain electro‐thermo‐mechanical simulations are performed to optimize the design parameters of the switch. The fabrication of the switch is completely CMOS‐process compatible. The design is fabricated using the AMI 0.6 μm CMOS process and a maskless reactive‐ion etching process. The measured results show the insertion loss and isolation are 1.67 and 33 dB, respectively, at 5.4 GHz, and 0.36 and 23 dB at 10 GHz. The actuation voltage is 25 V and the power consumption is 480 mW. This switch has a vast number of applications in the RF/microwave field, such as configurable voltage control oscillators, filters, and configurable matching networks. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009.     

RF MEMS悬臂梁开关的设计与仿真

利用有限元软件HFSS和ANSYS系统研究了串联MEMS开关的微波性能和力学性能与其结构参数之间的关系,并在此基础上优化出悬臂梁开关的几何结构参数,设计了RF MEMS开关,实验表明：在外施电压为10V左右时,悬臂梁的挠度可达3μm左右,5GHz时,回波损耗小于0．2dB,隔离度大于35dB。     

Design of novel compact anti-stiction and low insertion loss RF MEMS switch

A novel torsional RF MEMS capacitive switch design on silicon substrate is presented. The optimized switch topology such as reduction in up-state capacitance results in insertion loss better than ?0.1 dB till 20 GHz. Off to on state capacitance ratio is also improved by 18 fold and isolation is better than ?43 dB at 9.5 GHz. The achieved on state return loss is ?38 dB as compared to ?21 dB at 9.5 GHz. An optimized reduction in contact area and use of floating metal layer increases the switching speed from 56 to 46 μsec. It also increases the switch reliability by alleviating the stiction.     

A novel DMTL capacitive switch with electrostatic actuation MAM capacitors

A novel DMTL capacitive switch with electrostatic actuation metal–air–metal (MAM) capacitors is presented. The top board of MAM capacitors will be pulled down together with the switch bridge. It has higher isolation in down-state than DMTL capacitive switch and has lower insert loss and higher self-actuation RF power comparing with MEMS shunt capacitive switch. Two of the novel DMTL capacitive switches are designed for high isolation and high self-actuation RF power, respectively. The calculated result shows that both of the two novel switches have lower insert loss than the MEMS shunt capacitive switch. The self-actuation RF power of them are 4 and 2.4 times that of MEMS shunt capacitive switch, respectively, at the cost of ?6.23 and ?3.54?dB reduction in isolation (30?GHz).     

Broadband radio frequency MEMS series contact switch with low insertion loss

A new radio frequency (RF) micro-electro-mechanical-system (MEMS) single cantilever series contact switch is designed as a low-insertion-loss and low-power electronic component that is intended to provide integrated control of the opening and closing signals of other MEMS devices operating over a wide frequency range (DC–60 GHz). The MEMS switching element consists of an A-type top electrode that is fixed onto coplanar waveguide lines through anchor points to reduce the insertion loss in the on-state of the device. The air gap between the top electrode and the actuation electrode of the designed MEMS switch is optimized to improve the isolation characteristics of the switch. In addition, the switching voltage required is approximately 24 V. The simulation results presented here show that the insertion loss of the switch in the on-state is less than 0.71 dB, while the minimum isolation is 20.69 dB in the off-state at 60 GHz. The proposed RF MEMS switch will be useful for communication devices and test instruments used in broadband applications.

     

A 60‐GHz single‐pole‐single‐throw switch in 65‐nm bulk CMOS

A single‐pole‐single‐throw (SPST) switch in a π‐network topology is designed in a 1.2‐V 65‐nm bulk CMOS RF process for millimeter‐wave applications in the 60‐GHz band from 57 to 66 GHz. The SPST switch with an active chip area of only 96 μm × 140 μm achieves the measured 11‐dB return loss, 1.6‐dB insertion loss, and 27.9‐dB isolation at 60 GHz. The SPST switch also shows the simulated power‐handling capability of 11.4 dBm and switching speed of 1 ns at 60 GHz. These results clearly demonstrate that the SPST switch in CMOS rivals the performance of SPST switches in GaAs and therefore has potential to be used in highly‐integrated 60‐GHz CMOS radios. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

A lateral RF MEMS capacitive switch utilizing parylene as dielectric

A novel lateral RF MEMS capacitive switch was reported in this paper. This switch employed parylene as the dielectric material, taking advantages of its low temperature deposition and conformal coating. The low resistivity single crystalline silicon served as the material of the mechanical structures. The switch was fabricated by bulk micromachining processes with only two lithographic masks and a shadow mask. The dynamical response, parylene insulation performance, and RF performances of the fabricated switch were characterized, respectively. The switching time from the open state to the close state was 105 μs at a loaded voltage of 78 V, while 15.6 μs from the close state to the open state. The isolation was better than 15 dB from 20 to 40 GHz, and the maximal isolation was 23.5 dB at 25 GHz; while the insertion loss was below 1.4 dB at 25 GHz, when bonding wires connected the ground lines. These results verify that the parylene is a good candidate material to act as sidewall dielectric to realize the lateral capacitive switch.     

A low voltage vertical comb RF MEMS switch

Design and simulations of a novel RF MEMS switch is reported as a solution to many RF wireless applications. A new comb structure for RF MEMS switch is proposed for low voltage and high frequency operations. Isolation degree and actuation voltage, both improved by the new structure. The mechanical and electromagnetic simulation results show better performance for this new switch compared to parallel plate switch. The simulation is done by the intellisuit and HFSS softwares. The Simulation results show that the actuation voltage is decreased by 13% and the linearity of the switch displacement with respect to the actuation voltage is improved by 22% compared to the parallel plate structure. The HFSS simulation results indicate an insertion loss better than 0.33 dB at 50 GHz and isolation greater than 13.4 dB at 50 GHz.     

RF MEMS membrane switches on GaAs substrates for X-band applications

Micromechanical switches have demonstrated great potential at microwave frequencies. For low-loss applications at microwave frequencies, it is important to use high-resistivity substrates. This paper presents the design and fabrication of the shunt-capacitive MEMS switch on GaAs substrates. Analytical mechanical and impedance models of the membrane switch are given, and the results are confirmed by using the ANSYS and HFSS software, respectively. A surface micromachining process, which is compatible with the conventional millimeter-wave integrated circuits (MMICs) fabrication technology, was adopted to fabricate the RF switch on GaAs substrates. Its S-parameter was taken using a HP8510C vector network analyzer and a Cascade Probe station. The measured insertion loss of the switch and its associated transmission line is less than 0.25 dB from 1 to 25.6 GHz, and the isolation may reach -42 dB at its self-resonate frequency of 24.5 GHz. The actuation voltage is about 17 V. The switch has demonstrated lifetimes as long as 5/spl times/10/sup 6/ cycles. The wideband high performance in isolation and insertion loss offers the monolithic integration capability with GaAs MMICs.     

Thin-Film Encapsulated RF MEMS Switches

A wafer-level thin-film encapsulation process has been demonstrated to package radio-frequency (RF) microelectromechanical systems (MEMS) switches in this paper. Individual shunt capacitive switches were packaged in a ~1nL inorganic enclosure with process temperatures not exceeding 300 degC. A shell covering the switch consisted of 10 nm of sputtered alumina and 1.67 mum of sputtered silicon nitride dielectric film. The switch and dielectric shell were simultaneously wet-released through access channels in the shell. Following release, access channels were sealed with 10 nm of sputtered alumina and 2-4 mum of either plasma-enhanced chemical vapor deposited silicon dioxide or silicon nitride. Electromagnetic simulation and RF test results before and after sealing show minimal RF degradation of switch performance. Before sealing, the insertion loss and isolation at 10 GHz averaged 0.12 and 10.7 dB, respectively. After sealing, the same devices had an average insertion loss and isolation of 0.12 and 10.1 dB, respectively. Complete characterization of the package atmosphere was not completed due to challenges in assessing nanoliter-scale volumes     

Redundancy RF MEMS Multiport Switches and Switch Matrices

The objective of this paper is to investigate novel configurations of planar multiport radio-frequency (RF) microelectromechanical systems (MEMS) C-type and R-type switches and redundancy switch matrices for satellite communications. An in-house monolithic fabrication process dedicated to electrostatic multiport RF MEMS switches and switch matrices is developed and fine tuned. The proposed C-type switch is a four-port device with two operational states. This switch exhibits an insertion loss of less than 0.3 dB and isolation of about 25 dB at satellite C-band frequency range. The novel R-type switch is also a four-port device with an additional operational state. The measured results show an insertion loss of better than 0.4 dB and an isolation of better than 25 dB at C-band. This is the first time that an R-type RF MEMS switch is ever reported. Several of these switches are integrated in the form of redundancy switch matrices, and two novel monolithic five to seven redundancy switch matrices are developed, fabricated, and tested. It is shown that the additional operating state of the R-type switch not only decreases the number of elements by 50% but also reduces the size drastically     

基于PIN管的大功率射频开关研制

随着通信系统发射功率的增加,以及工作频率的提高,高功率容量,高隔离,低插损,短响应时间的射频开关尤其重要。文章简要介绍了PIN管单刀双掷射频开关的原理,对高功率容量下PIN二极管的应用关键进行了详细分析,设计了一个工作于200MHz～500MHz,差损小于0.7dB,隔离度大于70dB,驻波比小一地1.5,功率容量100W,开关速度小于20μs的一分四射频开关。     

Design and modeling of a continuously variable piezoelectric RF MEMS switch

A structure for a piezoelectrically actuated capacitive RF MEMS switch that is continuously variable between the ON state and the OFF state has been proposed. The device is based on variable capacitance using a cantilever fixed at both ends that is actuated using a lead zirconate titanate thin film. Because the device is contactless, the reliability issues common in contact-type RF MEMS switches can be avoided. A comprehensive mathematical model has been developed in order to study the performance of the device, and allow for design optimization. Electrical measurements on test structures have been compared with the performance predicted by the model, and the results used to design a prototype RF MEMS switch. The model and simulations indicate the proposed switch structure can provide an insertion loss better than 0.7 dB and an isolation of more than 10 dB between 6 and 14 GHz with an actuation voltage of 22.4 V. The state of the device is continuously variable between the ON state and the OFF state, with a tunable range of capacitance of more than 15\(\times \).     

Innovative micromachined microwave switch with very low insertion loss

This work fabricates a novel type of micromachined microwave switch on a semi-insulating GaAs substrate using a microactuator and a coplanar waveguide (CPW) using electrostatic actuation as the switching mechanism. The microactuator uses several continuously-bent cantilevers connected in series. A cantilever with two sections, a straight-beam section and a curved-beam section, forms the basic unit of the microactuator. The straight-beam section is made of an aluminum (Al) layer, 0.5 μm thick. The curved-beam section is made of an Al layer of the same thickness, combined with a 0.1-μm layer of chromium (Cr) film. This section is initially curled due to the different residual stress of Al and Cr. The low temperature (250°C) process ensures that the switch is capable of monolithic integration with microwave and millimeter wave integrated circuits (MMIC). When no dc potential is applied, the actuator is curled far from the signal line of the CPW, and therefore the insertion loss at this `on' state is only 0.2 dB at 10 GHz. Because the metal microactuator is far from the signal line of the CPW at this `on' state, the microwave propagation is hardly disturbed by the microactuator. When an applied electrostatic force pulls the actuator tip down into contact with the signal line of the CPW, it creates a large capacitance between the actuator and the CPW. The isolation at this `off' state is −17 dB at 10 GHz. Maintaining the actuator in the `off' state requires only a very low actuation voltage of 26 V. Once the dc potential is removed, the residual stress of the actuator structure pulls it to the up position. The microactuator moving back and forth between these two switching states, acts like the movement of a frog's tongue. This switch has excellent performance at the wide-band RF frequencies used in transmit/receive modules of wireless communication. This study measured the critical corrupt (activating) voltage and recovery voltage of the microactuator. The 10-ms switching time of this switch is slower than the switching time of solid-state switches.     

The SiOG-based single-crystalline silicon (SCS) RF MEMS switch with uniform characteristics

This paper details single-crystalline silicon (SCS) direct contact radio frequency microelectromechanical systems (RF MEMS) switch designed and fabricated using an SiOG (silicon-on-glass) substrate, so as to obtain higher fabrication and performance uniformity compared with a conventional metal switch. The mechanical and electrical performances of the fabricated silicon switch have been tested. In comparison with a conventional metallic MEMS switch, we can obtain higher productivity and uniformity by using SCS, because it has very low stresses and superior thermal characteristics as a structural material of the switch. Also, by using the SiOG substrate instead of an SOI substrate, fabrication cost can be significantly reduced. The proposed switch is fabricated on a coplanar waveguide (CPW) and actuated by electrostatic force. The designed chip size is 1.05 mm/spl times/0.72 mm. Measured pull-in voltage and actuation voltage were 19 V and 26 V, respectively. Eighteen identical switches taken randomly throughout the wafer showed average and standard deviation of the measured pull-in voltage of 19.1 and 1.5 V, respectively. The RF characteristics of the fabricated switch from dc to 30 GHz have been measured. The isolation and insertion loss measured on the four identical samples were -38 to -39 dB and -0.18 to -0.2 dB at 2 GHz, respectively. Forming damping holes on the upper electrode leads to a relatively fast switching speed. Measured ON and OFF time were 25 and 13 /spl mu/s, respectively. In the switch OFF state, self-actuation does not happen up to the input power of 34 dBm. The measured holding power of the fabricated switch was 31 dBm. Stiction problem was not observed after 10/sup 8/ cycles of repeated actuation, but the contact resistance varied about 0.5-1 /spl Omega/ from the initial value.     

A broadband coplanar waveguide to rectangular waveguide power divider using a slot

In this article, a broadband coplanar waveguide (CPW) to rectangular waveguide power divider using the dipole slot is proposed. The power divider consists of an input CPW port and two output rectangular waveguide ports. The CPW to rectangular waveguide power divider using the dipole slot has a return loss larger than 15 dB and an insertion loss equal to 3.08–3.27 dB in the whole X‐band (8.2–12.4 GHz). Furthermore, to broaden the bandwidth, the dipole slot is replaced by the bow‐tie slot. The CPW to rectangular waveguide power divider using the bow‐tie slot yields a return loss larger than 16 dB and an insertion loss equal to 3.05–3.29 dB from 8 to 13 GHz, which exceeds the X‐band. To verify our design, power dividers that use the dipole slot or the bow‐tie slot are fabricated and measured. The measurement results of both power dividers are in good agreement with the simulation results. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.     

Novel Reliable RF Capacitive MEMS Switches With Photodefinable Metal–Oxide Dielectrics

In this paper, the design, fabrication, and measurement of reliable low-cost capacitive radio-frequency microelectromechanical systems switches with a novel fabrication approach using direct photodefinable high-k metal oxides are presented. In this approach, a radiation-sensitive metal-organic precursor is deposited via spin coating and converted to a high-k metal oxide via ultraviolet exposure. Measurements of the bridge-type switches have been done up to 40 GHz. These switches are reliable (> 340 million cycles) and exhibited low insertion loss (about 0.3 dB at 20 GHz) and better isolation (about 24 dB at 20 GHz) at frequencies below the resonant frequency as compared to switches that are fabricated using a simple silicon nitride dielectric.     

Design and modeling of a novel RF MEMS series switch with low actuation voltage

This paper presents the design, analysis, modeling and simulation of a novel RF MEMS series switches with low actuation voltage. A mechanical modeling is presented to describe the behavior of the series switch. The switch is designed with special mechanical structures. The novel mechanical and mathematical modeling of the switch leads to calculation of the accurate actuation voltage. The spring constant has been calculated in relation to the presence of the residual stress in the beam. The calculated spring constant for this beam is used to determine the accurate actuation voltage. The size of the switch is 60 × 110 µm². The designed RF MEMS series switch was simulated using Intellisuite MEMS tool. He calculated actuation voltage is 4.05 V and simulated one is 4.2 V for 0.6 µm beam thickness. The calculated result is also very close with simulated one. The proposed switch compared with other electrostatic switches has low actuation voltage and small size. The RF characteristics were simulated using HFSS software and the switch has good RF performance. The insertion loss of 0.067 dB, return loss of 26 dB and isolation of 16 dB were achieved at 40 GHz.