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Vladimir Derenskyi Widianta Gomulya Wytse Talsma Jorge Mario Salazar‐Rios Martin Fritsch Peter Nirmalraj Heike Riel Sybille Allard Ullrich Scherf Maria A. Loi 《Advanced materials (Deerfield Beach, Fla.)》2017,29(23)
In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self‐assembly of semiconducting single walled carbon nanotubes (s‐SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s‐SWNTs from raw mixtures. In this work the authors functionalized the polymer with side chains containing thiols, to obtain chemical self‐assembly of the selected s‐SWNTs on substrates with prepatterned gold electrodes. The authors show that the full side functionalization of the conjugated polymer with thiol groups partially disrupts the s‐SWNTs selection, with the presence of metallic tubes in the dispersion. However, the authors determine that the selectivity can be recovered either by tuning the number of thiol groups in the polymer, or by modulating the polymer/SWNTs proportions. As demonstrated by optical and electrical measurements, the polymer containing 2.5% of thiol groups gives the best s‐SWNT purity. Field‐effect transistors with various channel lengths, using networks of SWNTs and individual tubes, are fabricated by direct chemical self‐assembly of the SWNTs/thiolated‐polyfluorenes on substrates with lithographically defined electrodes. The network devices show superior performance (mobility up to 24 cm2 V?1 s?1), while SWNTs devices based on individual tubes show an unprecedented (100%) yield for working devices. Importantly, the SWNTs assembled by mean of the thiol groups are stably anchored to the substrate and are resistant to external perturbation as sonication in organic solvents. 相似文献
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Carbon Nanotubes: On‐Chip Chemical Self‐Assembly of Semiconducting Single‐Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors (Adv. Mater. 23/2017) 
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下载免费PDF全文 Vladimir Derenskyi Widianta Gomulya Wytse Talsma Jorge Mario Salazar‐Rios Martin Fritsch Peter Nirmalraj Heike Riel Sybille Allard Ullrich Scherf Maria A. Loi 《Advanced materials (Deerfield Beach, Fla.)》2017,29(23)
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Justin Wu Alexander Antaris Ming Gong Hongjie Dai 《Advanced materials (Deerfield Beach, Fla.)》2014,26(35):6151-6156
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Graphene: Layer‐Stacking Growth and Electrical Transport of Hierarchical Graphene Architectures (Adv. Mater. 20/2014) 下载免费PDF全文
下载免费PDF全文 Birong Luo Bingyan Chen Lan Meng Dechao Geng Hongtao Liu Jie Xu Zhiyong Zhang Hantang Zhang Lianmao Peng Lin He Wenping Hu Yunqi Liu Gui Yu 《Advanced materials (Deerfield Beach, Fla.)》2014,26(20):3355-3355
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Lili Zhang Dong‐Ming Sun Peng‐Xiang Hou Chang Liu Tianyuan Liu Jianfeng Wen Nujiang Tang Jian Luan Chao Shi Jin‐Cheng Li Hong‐Tao Cong Hui‐Ming Cheng 《Advanced materials (Deerfield Beach, Fla.)》2017,29(32)
A major obstacle for the use of single‐wall carbon nanotubes (SWCNTs) in electronic devices is their mixture of different types of electrical conductivity that strongly depends on their helical structure. The existence of metal impurities as a residue of a metallic growth catalyst may also lower the performance of SWCNT‐based devices. Here, it is shown that by using silicon oxide (SiOx) nanoparticles as a catalyst, metal‐free semiconducting and metallic SWCNTs can be selectively synthesized by the chemical vapor deposition of ethanol. It is found that control over the nanoparticle size and the content of oxygen in the SiOx catalyst plays a key role in the selective growth of SWCNTs. Furthermore, by using the as‐grown semiconducting and metallic SWCNTs as the channel material and source/drain electrodes, respectively, all‐SWCNT thin‐film transistors are fabricated to demonstrate the remarkable potential of these SWCNTs for electronic devices. 相似文献
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Ksenia S. Makarenko Zhihua Liu Michel P. de Jong Floris A. Zwanenburg Jurriaan Huskens Wilfred G. van der Wiel 《Advanced materials (Deerfield Beach, Fla.)》2017,29(42)
As the downscaling of conventional semiconductor electronics becomes more and more challenging, the interest in alternative material systems and fabrication methods is growing. A novel bottom‐up approach for the fabrication of high‐quality single‐electron transistors (SETs) that can easily be contacted electrically in a controllable manner is developed. This approach employs the self‐assembly of Au nanoparticles forming the SETs, and Au nanorods forming the leads to macroscopic electrodes, thus bridging the gap between the nano‐ and microscale. Low‐temperature electron‐transport measurements reveal exemplary single‐electron tunneling characteristics. SET behavior can be significantly changed, post‐fabrication, using molecular exchange of the tunnel barriers, demonstrating the tunability of the assemblies. These results form a promising proof of principle for the versatility of bottom‐up nanoelectronics, and toward controlled fabrication of nanoelectronic devices. 相似文献
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Muhammad Khatib Tan‐Phat Huynh Yunfeng Deng Yehu David Horev Walaa Saliba Weiwei Wu Hossam Haick 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(2)
A flexible and stretchable field‐effect transistor (FET) is an essential element in a number of modern electronics. To realize the potential of this device in harsh real‐world conditions and to extend its application spectrum, new functionalities are needed to be introduced into the device. Here, solution‐processable elements based on carbon nanotubes that empower flexible and stretchable FET with high hole‐mobility (µh ≈ 10 cm2 V?1 s?1) and relatively low operating voltages (<8 V) and that retain self‐healing properties of all FET components are reported. The device has repeatable intrinsic and autonomic self‐healing ability, namely without use of any external trigger, enabling the restoration of its electrical and mechanical properties, both after microscale damage or complete cut of the device—for example by a scissor. The device can be repeatedly stretched for >200 cycles of up to 50% strain without a significant loss in its electrical properties. The device is applicable in the form of a ≈3 µm thick freestanding skin tattoo and has multifunctional sensing properties, such as detection of temperature and humidity. With this unprecedented biomimetic transistor, highly sustainable and reliable soft electronic applications can be introduced. 相似文献
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《Advanced Materials Interfaces》2018,5(6)
A synergistic approach to enhance charge‐carrier transport in organic semiconductors along with facile solution processing and high performance is crucial for the advancement of organic electronics. The floating film transfer method (FTM) is used as a facile and cost‐effective method for the fabrication of large‐scale, uniform, highly oriented poly[2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b]thiophene] (pBTTT C‐14) films under ambient conditions. Utilization of such oriented films as the active semiconducting layer in organic field‐effect transistors (OFETs) results in highly anisotropic charge‐carrier transport. Highly oriented, FTM‐processed pBTTT C‐14 thin films are characterized by polarized electronic absorption and Raman spectroscopy, atomic force microscopy, out‐of‐plane X‐ray diffraction, and grazing incident X‐ray diffraction (GIXD) measurements. The GIXD data indicate an edge‐on orientation, which is highly desirable for planar devices such as OFETs. OFETs built using the oriented films show a mobility anisotropy of 10 and the highest mobility is 1.24 cm2 V−1 s−1 along the backbone orientation, which is among the highest value reported for this class of materials using a similar device configuration. 相似文献
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Zhenhua Sun Jinhua Li Chenming Liu Shihe Yang Feng Yan 《Advanced materials (Deerfield Beach, Fla.)》2011,23(32):3648-3652
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Xuexia He Fucai Liu Peng Hu Wei Fu Xingli Wang Qingsheng Zeng Wu Zhao Zheng Liu 《Small (Weinheim an der Bergstrasse, Germany)》2015,11(40):5423-5429
Recently, anisotropic 2D materials, such as black phosphorus and rhenium disulfides (ReS2), have attracted a lot attention because of their unique applications on electronics and optoelectronics. In this work, the direct growth of high‐quality ReS2 atomic layers and nanoribbons has been demonstrated by using chemical vapor deposition (CVD) method. A possible growth mechanism is proposed according to the controlled experiments. The CVD ReS2‐based filed‐effect transistors (FETs) show n‐type semiconducting behavior with a current on/off ratio of ≈106 and a charge carrier mobility of ≈9.3 cm2 Vs−1. These results suggested that the quality of CVD grown ReS2 is comparable to mechanically exfoliated ReS2, which is also further supported by atomic force microscopy imaging, high‐resolution transmission electron microscopy imaging and thickness‐dependent Raman spectra. The study here indicates that CVD grown ReS2 may pave the way for the large‐scale fabrication of ReS2‐based high‐performance optoelectronic devices, such as anisotropic FETs and polarization detection. 相似文献