TE013 Mode High Temperature Superconductor Millimeter Resonator

This paper describes a TE₀₁₃ mode dielectric resonator at 36.098 GHz. The dielectric resonator was formed by sandwiching a cylindrical piece of polished dielectric (sapphire) rod between two GdBa₂Cu₃O_7–x (GBCO) High Temperature Superconductor (HTS) thin films. The resonator was tested as a two-port device at a temperature of 77 K. A 62700 unload quality factor Q ₀ was obtained. The surface resistance (Rs) of the HTS film had been determined as 9.4 m at 77 K and 36 GHz.     

TE013 Mode High Temperature Superconductor Millimeter Resonator

This paper describes a TE₀₁₃ mode dielectric resonator at 36.098 GHz. The dielectric resonator was formed by sandwiching a cylindrical piece of polished dielectric (sapphire) rod between two GdBa₂Cu₃O_7?x (GBCO) High Temperature Superconductor (HTS) thin films. The resonator was tested as a two-port device at a temperature of 77 K. A 62700 unload quality factor Q ₀ was obtained. The surface resistance (Rs) of the HTS film had been determined as 9.4 mΩ at 77 K and 36 GHz.     

Power handling capabilities of superconducting YBCO thin films: Thermally induced nonlinearity effects

We have measured the microwave power dependence of the surface impedance Z_s of YBa₂Cu₃O_x thin films up to very high microwave power levels. Films with different crystal qualities, including one with a bicrystal Josephson junction, were investigated. The experiments included both frequency-domain and pulsed time-domain measurements using a 14 GHz TE₀₁₁ dielectric cavity. Our results demonstrate that the dissipation of heat, generated by rf currents in the superconducting film, contributes to the observed nonlinearities in the surface resistance. The relative extent of this contribution is determined primarily by the film quality. A simple Fabry-Perot resonator model, combined with a cavity heat transfer model, was used to analyze the effects of such nonlinearities on the electromagnetic response of the dielectric cavity to a pulsed input signal.     

Microwave surface resistance of epitaxial YBa2Cu3O7 thin films at 18.7 GHz measured by a dielectric resonator technique

We used a dielectric resonator technique for highly sensitive measurements of the temperature dependence of the microwave surface resistanceR _s of 1×1 cm² superconducting films at 18.7 GHz. It consists of a sapphire disc positioned on the film under investigation within a copper cavity which is acting as a radiation shield. In the TE₀₁ oscillation mode the highly reproducible quality factor of about 10⁵ results in a sensitivity of ±50 forR _s measurements. The temperature dependence ofR _s can be measured up to values as high as 1 . We have investigated several YBa₂Cu₃O₇ thin films prepared by high oxygen pressure d.c. sputtering on LaAlO₃ and NdGaO₃. Our best films exhibit a pronounced nonlinear behavior of the d.c. resistivity(T) with(300K)/(100K) values of about 3.7. Those films show, besides the initial fall-off just belowT _c , a further strong decrease ofR _s at low temperatures. This was observed both at 18.7 GHz and 87 GHz, as measured by a conventional cavity end plate replacement technique. ForTT_c/2 these films exhibit an exp (–T _c/T) dependence ofR _s with-values around 0.4. These observations may be explained by a superconducting energy gap with 2/kT _c0.8 for charge carriers localized in the CuO chains for YBa₂Cu₃O₇.     

Structure and microwave dielectric properties of Bi1.5Zn1.0Nb1.5O7 thin films deposited on alumina substrates by pulsed laser deposition

Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films were deposited on polycrystalline alumina substrates by pulsed laser deposition at different substrate temperatures. The phase structure and surface morphology were characterized using X-ray diffractometer (XRD) and atomic force microscopy. Microwave dielectric properties were performed using split-post dielectric resonator method at spot frequencies of 10, 15 and 19 GHz, respectively. The XRD results indicate that the as-deposited Bi_1.5Zn_1.0Nb_1.5O₇ thin films deposited at 650 °C are amorphous in nature. The dielectric permittivity and loss tangent of the amorphous BZN thin films are 75.5 and 0.013 at 10 GHz, respectively. As the measure frequency increased to 19 GHz, the dielectric permittivity slightly decreases and loss tangent slightly increases. BZN thin films were crystallized after the post-annealing by a rapid thermal annealing in air for 30 min. The crystallized BZN thin films exhibit the excellent dielectric properties and frequency responses. The dielectric permittivity and loss tangent of the crystallized BZN thin films are 154 and 0.038 at 10 GHz, respectively.     

Accurate Measurements of Surface Resistance of HTS Films Using a Novel Transmission Mode Q-Factor Technique

Microwave characterization of HTS films, using typically a sapphire dielectric resonator can only be as accurate as the Q₀-factor and f_res measurements. A novel Transmission Mode Q-Factor (TMQF) technique has been used for accurate measurements of surface resistance of YBa₂Cu₃O₇ films, with errors lower than 1%. The method allows for accurate determination of Q_L, ₁, and ₂ based on novel equations and a multi-frequency circle-fitting technique applied to S₂₁, S₁₁, and S₂₂ measured around the resonance. Parasitic effects introduced by real measurement systems, namely, noise, crosstalk, coupling loss, coupling reactance, and electrical delay due to uncalibrated transmission lines are compensated for in the new method. Range of unloaded Q₀-factors that can be measured with the TMQF technique is assessed to be from 100 to 10 million at the GHz range of frequencies.     

Power-Dependent Impedance of High Temperature Superconductor Thin Films: Relation to Harmonic Generation

We present measurements of the power-dependent microwave surface impedance of YBa₂Cu₃O_7– thin films, performed using patterned coplanar waveguide (CPW) resonators at 5.87 GHz and 76 K. We compare these resonator measurements with third-harmonic generation measurements performed on CPW transmission lines of the same geometry patterned onto the same thin-film sample at the same frequency and temperature. We find that the power-dependent surface reactance X_s(P_rf) is directly related to the magnitude of the generated third-harmonic signal, indicating a common origin for both of these manifestations of nonlinearity in high temperature superconductor (HTS) devices. These results are consistent with the nonlinear response generated by a current-dependent penetration depth (J), which provides a material limitation on the linearity that can be achieved in any practical HTS microwave device.     

Thin Film Tl-Based HTS Microwave Devices

Linear microstrip resonators suffer from high peak current density inside the resonators which limit the power handling characteristics. To realise higher power filters for cellular applications it is possible to use two dimensional microstrip resonators (such as disks) to equalise the internal current distribution. We have designed and tested such microstrip resonators, fabricated from TBCCO 2212 thin films deposited by RF sputtering onto 10×10mm and 20×20mm LaAlO₃, substrates. The R_s of such films has been measured at 24 GHz using a sapphire dielectric resonator and shown to be less than 500 scaled to 10 GHz and at 80K. Q values of 3-12 GHz disk resonators have demonstrated considerable improvements when compared to both linear HTS microstrip resonators and comparable copper disk resonators. Additionally, the power handling of such resonators has been shown to be superior to that of conventional linear resonators fabricated from similar material.     

Surface resistance of large-area Tl2Ba2CaCu2O8 thin films at microwave and millimeter wave frequencies measured by three noncavity techniques

The surface resistanceR _s of Tl₂Ba₂CaCu₂O₈ films fabricated on LaAlO₃ wafers up to 3 inches (7.6 cm) in diameter through a post-deposition anneal process was measured over the frequency range 5.55–94.1 GHz by the following techniques: 5.55 and 27.5 GHz high-temperature superconductor (HTS)-sapphire resonators, 10 GHz parallel plate resonator, and 94.1 GHz scanning confocal resonator.R _s was found to exhibit a quadratic dependence on frequencyf at 77 K:R _s f ^2.0±0.1. The highest-quality films yieldR _s =145±15 at 10 GHz and 77 K. Scanning confocal resonator mapping ofR _s across a 2-inch (5.1 cm) diameter wafer yielded a base value forR _s of 16±1 m at 77 K and 94.1 GHz (equivalent to 180±10 at 10 GHz) and good uniformity inR _s across the wafer. HTS-sapphire resonator measurements ofR _s for fifteen 1.2 cm square parts cut from a 3-inch diameter wafer yieldedR _s values scaled to 10 GHz of 196±10 at 80 K. Similar values were measured for Tl₂Ba₂CaCu₂O₈ films prepared on both sides of a 2-inch diameter wafer.Rs values at 10 GHz and 80 K of 147–214 were maintained over the course of 40 independent and successive deposition runs and corresponding anneals under nominally identical film fabrication conditions. Surface resistance at 5.55 GHz remained below 80 for maximum rf magnetic fields up to 85 Oe at 4.2 K and 7 Oe at 80 K, respectively. Results are compared with predictions of the two-fluid model. The relative advantages and disadvantages of the different techniques for measuring surface resistance are discussed.     

Parallel-plate resonator of variable spacer thickness for accurate measurements of surface impedance of high-Tc superconductive films

Measurements of microwave surface impedance of high-T _c films at gigahertz frequencies and nitrogen temperature are performed. A simple technique employing a parallel-plate resonator with liquid nitrogen as a dielectric spaces is suggested. The use of a precise mechanical device provides smooth changing of distance between films from 200m down to zero. Coupling to the resonator is accomplished by means of two small antennas-half-wave vibrators for frequency 10 GHz. The method for determining resistivity and magnetic field penetration depth was based on the analysis of spacer thickness dependences of the resonator quality factor and frequency. YBa₂Cu₃O₇ films produced by a laser deposition technique on CaNdAlO₄ substrates withT _c =91 K andj _c =10⁷ A/cm² and on NdGaO₃ substrates withT _c =91 K andj _c =10⁶ A/cm² are examined, and the valuesR _s =0.6 m,=348 nm atf=8.97 GHz andR _s =0.5 m,=250 nm atf=10.12 GHz, respectively, are obtained at 77 K.     

Preparation and characterization of Ce-doped BaTiO3 thin films by r.f. sputtering

Ce-doped BaTiO₃ thin films prepared on silicon-platinium by r.f. sputtering has been investigated. BaTiO₃ doped with 5.5 mol%CeO₂ thin film was deposited at 550°C substrate temperature in an Ar atmosfere. The crystal structure and shape were examined by X-ray diffraction and scanning electron microscopy with EDAX. Analysis by X-ray diffraction patterns show that the crystalline film with a cubic structure of BaTiO₃, was obtained. The surface morphology (roughness, the grain size and the droplet size) of the thin film surface was examined by atomic force microscopy (AFM). The grain size is about 160 nm, the droplet size is about 0.675 m and the roughness is 36.88 nm. EDAX analysis established a composition of the film to be identical with that of the target (BaTiO₃ doped with 5.5 mol%CeO₂). The broad peak in the capacitance versus temperature curve at the Curie point indicate that the r.f. sputtered Ce-doped BaTiO₃ film is ferroelectric. The values of the capacitance of the thin film at 1 KHz were found to be 86 pF and the loss dielectric was tan = 0.0875. The film exibits a dielectric anomaly peak at 23°C showing ferroelectric to paraelectric phase transition.     

High-temperature superconducting dual-mode resonator on (100) MgO substrate

We report, for the first time to our knowledge, a clear resonant peak split in the range of 7.7–9.7 GHz in a perturbed dual-mode disk-type resonator (DMDR) made of YBa₂Cu₃O_7–x (YBCO) superconducting thin film on MgO substrate. Epitaxial YBCO superconducting thin films were grown on (100) MgO substrates by pulsed laser deposition technique. The critical temperature of superconducting thin film on MgO substrate was 85 K. Superconducting dualmode disk resonators were designed by microwave design software, EEsof, and patterned by photolithography and a wet-etch process. The unloaded quality factor (Q_UL) of the superconducting DMDR was found to be 1,312 at 77 K. We believe this type of DMDR can be utilized for dual-mode resonator-based filters for satellite communications.     

Dependence of microwave surface resistance on the structure of laser-deposited YBa2Cu3O7?x thin films

The effect of the structure YBa₂Cu₃O_7-x superconducting thin films on microwave surface resistance was investigated. The electon channeling patterns (ECPs) and X-ray experimental results showed that the microwave surface resistanceR _s is strongly correlated with the perfection of the thin films. The films were deposited on LaAlO₃(100) and YSZ(100) substrates. For thin film withR _s of 280, the crystallinity of the thin film shown byw-scanning and-scanning was excellent and the ECPs were very sharp. For thin film with highR _s of 98 m, only bands from the major zone were visible in the ECPs, which suggested poor crystallinity of the film. From this investigation it was shown that the more perfect the thin films, the lower theR _s.     

Microwave Power Dependence of Surface Resistance of High-Temperature Superconductor YBa2Cu3O y Films by Dielectric Resonator Method

The microwave power dependence of the surface resistance of YBa₂Cu₃O_y films of two different surface morphologies was measured using the dielectric resonator method. The dielectric resonator consisted of a high-quality sapphire rod sandwiched between two superconductor films. Measurements showed that the microwave power dependence of the surface resistance strongly depended on the surface morphology of the YBa₂Cu₃O_y film though the surface resistance of those films at low microwave power was comparable. In conclusion, the surface morphology is one of the reasons of the power dependence which is crucial for high power applications.     

Effects of H2O partial pressure on the crystallinity of ZnO thin film and electrical characteristics of film bulk acoustic wave resonators

We have improved electrical characteristics of a film bulk acoustic wave (BAW) resonator that features the injection of H₂O gas into a process chamber. The preferred crystallinity of piezoelectric ZnO film was obtained by RF sputtering at a high H₂O partial pressure 1.5×10⁻⁴ Pa. The effective electromechanical coupling coefficient () of the BAW resonator remarkably goes up from 1.8% to 4.7% for which the corresponding H₂O partial pressures are 2.7×10⁻⁵ and 1.5×10⁻⁴ Pa. Injection of H₂O during the deposition process contributes to the improvement of crystallinity of ZnO thin film and the electrical characteristics of the BAW resonator.     

A hybrid superconductor/GaAs-MESFET microwave oscillator at 10.6 GHz

A 10.6 GHz hybrid superconducting film/GaAs-MESFET microwave oscillator has been designed, fabricated and characterized on a 10 mm × 15 mm LaAlO₃ substrate. The oscillator was a reflection mode type using a GaAs MESFET (NE72084) as the active device and a superconducting microstrip resonator as the frequency stabilizing element. By improving the unloaded quality factor of the superconducting microstrip resonator and adjusting coupling coefficient between the resonator and the MESFET, the phase noise of the oscillator was decreased. At 77 K, the phase noise of the oscillator at 10 KHz offset from carrier was −87 dBc/Hz.     

Self-healing superhydrophobic polyvinylidene fluoride/Fe<Subscript>3</Subscript>O<Subscript>4</Subscript>@polypyrrole fiber with core–sheath structures for superior microwave absorption

Self-healing superhydrophobic polyvinylidene fluoride/Fe₃O₄@polypyrrole (F-PVDF/Fe₃O₄@PPy _x ) fibers with core–sheath structure were successfully fabricated by electrospinning of a PVDF/Fe₃O₄ mixture and in situ chemical oxidative polymerization of pyrrole, followed by chemical vapor deposition with fluoroalkyl silane. The F-PVDF/Fe₃O₄@PPy_0.075 fiber film produces a superhydrophobic surface with self-healing behavior, which can repetitively and automatically restore superhydrophobicity when the surface is chemically damaged. Moreover, the maximum reflection loss (R _L) of the F-PVDF/Fe₃O₄@PPy_0.075 fiber film reaches ?21.5 dB at 16.8 GHz and the R _L below ?10 dB is in the frequency range of 10.6–16.5 GHz with a thickness of 2.5 mm. The microwave absorption performance is attributed to the synergetic effect between dielectric loss and magnetic loss originating from PPy, PVDF and Fe₃O₄. As a consequence, preparing such F-PVDF/Fe₃O₄@PPy _x fibers in this manner provides a simple and effective route to develop multi-functional microwave absorbing materials for practical applications.

Open image in new window

     

A Superconducting Resonator with a Hafnium Microbridge at Temperatures of 50–350 mK

A high-quality superconducting resonator with a microbridge of hafnium film for use in a circuit for readout a terahertz-band imaging array with frequency division multiplexing is demonstrated experimentally. The variability of the impedance of the bridge at a frequency of 1.5 GHz, which is a key factor in the control of the quality of the resonator, is studied. The bridge, having a thickness of about 50 nm, a critical temperature T_C ≈ 380 mK, and a plan size of 2.5 × 2.5 μm, was connected as a load of a resonator made of niobium film with a thickness of about 100 nm (T_C ~ 9 K). It is shown that the bridge smoothly changes its impedance proportionally to the bias power in the entire temperature range. The effective thermal insulation of the bridge was measured in a dilution cryostat at temperatures of 50–300 mK. Thermal conductivity G of the bridge was calculated and found to be ~4 × 10^–13 W/K, which gives an estimate of the sensitivity of the structure in the bolometric mode NEP ≈ 8 × 10^–19 W/Hz^1/2 at a temperature of 150 mK.     

Observation of X-band SQUID signals in a High-Tc superconducting film device

A microwave superconducting magnetometer is described in which a microstrip resonator is coupled to a two-hole high-T _c thin-film SQUID device. Both the microstrip circuit and the thin-film SQUID were fabricated by photolithography techniques. The YBCO thin film was deposited on single-crystal substrate of yttria-stabilized zirconia [YSZ(100)] by an ion beam sputtering technique producing a superconducting transition measured at a critical temperature ofT _c =92 K to within T 3 K. Non linear oscillatory behavior was observed in the microstrip resonator when inductively coupled to the SQUID. This nonlinear behavior yielded a microwave device in which the reflected microwave power varied with applied DC magnetic flux.