基于SIMULINK的扫描电机控制系统仿真

在建立扫描电机电磁模型的基础上，通过对电机需完成的特定运动功能进行数学分析，应用SIMULINK模块进行扫描电机的控制系统仿真设计，综合设计一套控制系统，以满足扫描电机实现特定运动功能的要求，最后利用试验验证了控制系统仿真的正确性。     

基于多场耦合的电机暂态温度场研究

针对复杂工况下电机不稳定发热引起的温度场暂态计算问题,根据不稳定发热的规律建立电磁场与温度场的二维耦合模型。文中依据小型式异步电机的结构特点,进行电磁场-热场二维模型的结构参数、边界条件参数、材料的电、热物理参数的计算、等效及配置;依据复杂工况下发热变化的规律,进行耦合频率、热源耦合方式的设计及相关参数计算配置,实现不稳定负载下电机的暂态温度场计算并考察电机各部分的实际最高温度分布状况。基于实验平台的方案设计和搭建,进行温升实验。通过对比分析电机暂态温度场的仿真和实验数据,验证了二维模型参数等效的合理性和多场耦合法能够准确地计算复杂工况下电机全暂态温度场。     

铁磁性基体与金属线阵列复合体系的双负材料特性

基于铁磁性基体与金属线阵列复合结构等效电磁参数的长波近似模型,设计了一种应用铁磁性基体的二维双负材料。根据带有介质包裹层的金属线的散射特性,采取多重散射方法计算了铁磁性基体与金属线阵列复合结构的传输谱;还通过全波仿真提取了单元结构的等效电磁参数。这些数值结果与长波近似模型的理论结果取得了很好的一致,确认了该模型的正确性。通过仿真周期复合体系中的电磁场分布,在所设计的双负频带内观察到了反向波现象,进一步验证了所设计的复合体系的双负特性。     

基于解析模型的永磁同步电机优化设计

永磁同步电机的电磁转矩和涡流损耗是两个重要指标,在体积等限制条件下,有效提高电磁转矩并降低转子涡流损耗是电机设计的关键。针对这个问题,文中采用解析法,分别计算电磁转矩和涡流损耗,并采用粒子群优化算法,对电机尺寸参数进行优化设计。解析模型包括电枢反应磁场和空载磁场模型。在计算涡流损耗时考虑涡流反应、永磁体周向分段等,优化算法的目标函数并使用权值将多目标转换成单目标。通过解析解与时步有限元数值解的对比可看出,解析解的误差在2%左右。参数影响分析的响应面显示,在定子绕组节距为25°时,电磁转矩和涡流损耗相关性一致。优化迭代结果显示,优化设计降低了76%的平均涡流损耗、22%的平均电磁转矩和68%的电磁转矩波动。     

直线振动电机非线性电磁特性有限元仿真研究

对动铁式直线振动电机进行研究,采用有限元仿真和实验测试相结合的方法,对直线电机的电磁力-位移特性进行分析研究.实验结果表明仿真的正确性.创新点在于该电机为非线性电磁出力特性,特别适于压缩机等非线性负载应用场合,且无永磁电机失磁弱点.电磁分析为动态电磁力特性研究和结构优化设计提供了基础.     

高温超导发电讥的结构优化

为了降低高温超导发电机气隙磁密的谐波幅值,提高超导电机的稳定性。本文在Ansys基础上通过有限元电磁场计算并结合遗传算法对高温超导发电机屏蔽和励磁绕组的结构参数进行了优化,结果发现气隙磁密各次谐波幅值明显降低,气隙磁密波形得到明显改善。为了验证优化效果,本文利用时步有限元对优化前后电机模型进行空载电动势计算,发现空载谐波电动势幅值明显降低。最后本文分析了优化后励磁绕组磁场强度,进而分析了励磁绕组稳定性。     

自动门用直线感应电机设计与仿真

直线感应电机传动结构在自动门中的应用越来越广泛。本文设计出一种自动门用的直线感应电机,并进行了有限元软件的电磁场仿真和运动仿真,将电磁设计结果与仿真结果进行比较,两者相吻合。从而验证,该直线电机电磁设计具有可行性。     

基于ANSYS的惯性平台电磁场分析

对惯性平台系统中陀螺电机和力矩电机进行了电磁场分析,陀螺电机的磁场强度较小,所以以力矩电机为磁场源进行了平台电磁场分析,分析结果为以后进行平台电磁兼容性设计提供了依据。     

高温超导直线感应电机的设计和电磁分析

本文介绍了高温超导直线感应电机的设计和电磁分析方法。首先,使用遗传算法得到一组优化的电机参数;然后,为了确定电机参数的准确性需要用有限元方法对得到的电机参数建模仿真;垂直穿过高温超导绕组的磁场(垂直磁场)对电机的临界电流影响很大,为了增加电机的临界电流,穿过电机初级超导绕组的垂直磁场应该尽可能地小。最后,要对建立的电机模型进行详细的电磁分析,以保证各项性能指标满足要求。     

新型建模及优化方法在BSRM中的应用

针对电机参数优化设计问题,引入多支持向量机与混沌优化算法,优化设计磁悬浮开关磁阻电机的结构参数。采用有限元仿真建立样本空间,采用多支持向量机构建磁悬浮开关磁阻电机的非参数模型,基于该模型,以满足额定电磁转矩为条件,优化电机参数,优化目标为最大的悬浮力、最小的转矩脉动、最小的绕组间互感,最优的电机结构参数通过混沌优化算法得到。仿真结果表明,BSRM利用多支持向量机所建立的非参数模型高效且准确,采用此优化方法设计的BSRM转矩脉动小、悬浮力大、绕组间互感小。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.