垂直腔半导体光放大器双稳及逻辑特性的理论研究

基于垂直腔半导体光放大器(VCSOA)双稳模型,从数值上分析了VCSOA的双稳条件、双稳控制以及双稳环简并下的AND逻辑实现.结果表明,在阈值附近(大于阈值的93%)和初始相位失谐量为负的情况下,输出光功率出现双稳态.偏置电流为阈值的98%时,输入光功率在5.5μW和2.2μW处发生上下跳变的结果与实验报道结果吻合得较好.同时,从理论上给出了偏置电流、相位失谐量、线宽展宽因子、顶端面反射率等控制参数对VCSOA开关功率、跳变点、双稳环宽和环宽简并以及对比度的影响规律.     

垂直腔半导体光放大器双稳及逻辑特性的理论研究

基于垂直腔半导体光放大器（VCSOA）双稳模型，从数值上分析了VCSOA的双稳条件、双稳控制以及双稳环简并下的AND逻辑实现．结果表明，在阈值附近（大于阈值的93%）和初始相位失谐量为负的情况下，输出光功率出现双稳态．偏置电流为阈值的98%时，输入光功率在5.5μW和2.2μW处发生上下跳变的结果与实验报道结果吻合得较好．同时，从理论上给出了偏置电流、相位失谐量、线宽展宽因子、顶端面反射率等控制参数对VCSOA开关功率、跳变点、双稳环宽和环宽简并以及对比度的影响规律．     

H表达的ECLD双稳环环宽的研究

采用H参量简化模型研究光栅调谐外腔半导体激光器的双稳特性,导出以H参量表达的双稳环环宽解析式,给出了其适用范围,得到剩余反射率减小时导致双稳环消失的临界值,然后数值模拟了光栅反射率、谱线展宽因子、H参量、剩余反射率对载流子密度与频率关系曲线的影响,从中发现了剩余反射率增大时也存在双稳环环宽为零的情况,数值计算了剩余反射率极限值,并指出了环宽极大值的位置。     

ECLD激光器三种模型的双稳特性比较

为了研究频率偏离增益峰值时光栅外腔半导体激光器的双稳特性,对比了以前研究双稳态的原简化模型和近期建立的H参量简化模型、H参量模型所得的双稳环环宽及其存在的条件;采用数值计算和模拟的方法,讨论了三种模型在不同剩余反射率下的双稳环环宽与频率的关系,将H参量简化模型、H参量模型在相同模式中环宽随剩余反射率的变化曲线进行了比较.结果表明,三种模型在增益峰值处的双稳特性相同,第一种模型只能反映增益峰值处的双稳特性,后两种模型能够展示调谐范围内的双稳特性,但在增益峰值两侧新的两种模型的双稳特性有很大的差异,所以在研究ECLD的双稳特性时考虑双稳环随H参量的变化而倾斜十分必要.     

垂直腔半导体光放大器调谐输出特性分析

为了分析垂直腔半导体光放大器的调谐输出特性,考虑到有源腔有效折射率和载流子浓度之间的关系,并结合载流子速率方程,采用建立腔内平均光子数与输入信号光功率之间的关系的研究方法,对垂直腔半导体光放大器的调谐输出特性进行了理论分析和数值仿真.结果表明,在一定的输入光功率和波长条件下,可以观察到双稳现象;双稳环的宽度随着输入光功...     

垂直腔半导体光放大器频率响应特性研究

从速率方程出发,利用小信号分析方法对垂直腔半导体光放大器(VCSOA)的频率响应特性进行了研究.在考虑了量子阱材料中的增益和载流子浓度之间的对数关系后,得到了VCSOA的峰值响应频率以及3 dB频率响应带宽的解析表达式.结果表明,VCSOA的频率响应特性受抽运光强度、输入光功率以及自发辐射因子的影响.     

基于H参量模型的外腔激光器双稳特性分析

采用H参量模型,导出了外腔激光器(ECLD)调谐范围内双稳环的环宽解析式以及决定双稳环存在条件的倾斜因子表达式;数值模拟了剩余反射率对倾斜因子的影响,并比较了引入倾斜因子前后的环宽.结果表明,在调谐范围内偏离增益峰值的频率处不仅存在双稳环,而且环宽极大值可达以往计算结果的2倍,环宽极大值位于两种环宽相等的频率处;同时发现环宽极大值随剩余反射率减小向低频移动,频率大于增益峰值时双稳环因倾斜因子的影响可能提前消失.     

垂直腔半导体光放大器动态增益特性研究

从速率方程和多层介质膜理论出发,构建了垂直腔半导体光放大器(VCSOA)的动态传输矩阵模型.利用该模型研究了器件在脉冲工作时的动态增益特性.数值结果表明,VCSOA的动态增益特性受抽运光强度、输入脉冲宽度以及分布布拉格反射镜周期数等工作参数的影响.     

VCSOA典型参数特性的电路级分析

从新型垂直腔半导体光放大器 ( VCSOA)典型的对称结构出发 ,以半导体光放大器速率方程为基础 ,利用电路级模拟软件 PSPICE,建立了 VCSOA的等效电路模型 ,进而模拟分析 VCSOA特性 ,得出了减小孔径或增大自发辐射因子都可以降低阈值电流、提高弛豫振荡频率、拓宽调制带宽和改善噪声特性的结果。     

光柵外腔半导体激光器H参量模型的理论研究

为了研究频率偏离增益峰值时光柵外腔半导体激光器(ECLD)的阈值特性,采用数学建模的方法,将载流子密度随频率的变化按LD模式间隔分段平均化、平移及旋转,建立了H参量模型,得到能表达调谐和双稳特性的解析式;通过数值模拟的方法将H参量模型与以往的ECLD模型作了对比.结果表明:H参量模型解决了不能用同一模型讨论ECLD调谐特性和双稳特性的问题,其不仅能研究调谐范围内的双稳环,且能描述更多的调谐和双稳特性及其关系.     

Modeling reflective bistability in vertical-cavity semiconductor optical amplifiers

The characteristics of optical bistability in a vertical-cavity semiconductor optical amplifier (VCSOA) operated in reflection are reported. The dependences of the optical bistability in VCSOAs on the initial phase detuning and on the applied bias current are analyzed. The optical bistability is also studied for different numbers of superimposed periods in the top distributed bragg reflector (DBR) that conform the internal cavity of the device. The appearance of the X-bistable and the clockwise bistable loops is predicted theoretically in a VCSOA operated in reflection for the first time, to the best of our knowledge. Moreover, it is also predicted that the control of the VCSOA's top reflectivity by the addition of new superimposed periods in its top DBR reduces by one order of magnitude the input power needed for the assessment of the X- and the clockwise bistable loop, compared to that required in in-plane semiconductor optical amplifiers. These results, added to the ease of fabricating two-dimensional arrays of this kind of device could be useful for the development of new optical logic or optical signal regeneration devices.     

Bistabilities of Birefringent Vertical-Cavity Semiconductor Optical Amplifiers With Antiresonant Reflecting Optical Waveguide

Bistable characteristics of birefringent antiresonant reflecting-optical-waveguide (ARROW) vertical-cavity semiconductor optical amplifiers (VCSOA) under external optical injection with multi-mode profile and arbitrary polarization orientation are investigated theoretically. It is found that the presence of ARROW can realize stable single-mode bistable switching in VCSOAs. Furthermore, with suitable design of the bias current profile, it can be shown that ARROW VCSOAs with a large core diameter (i.e., ${ge 50}~mu{hbox {m}}$) can sustain stable single-mode bistable switching.      

Optical bistability in a two-section InAs quantum-dot laser

Room temperature,continuous-wave bistable operation is achieved in two-section 1.24μm InAs quantum-dot (QD) lasers with integrated intracavity QD saturable absorbers(SA).It is found that the hysteresis width is narrowed with increasing reverse bias voltage,and broadened with increasing length of saturable absorber.This can be explained by the competition between QD absorption and electroabsorption in the SA section.In addition,a larger hysteresis width is realized than other reports so far,which can be a...     

线性变化电流注入改善分布反馈半导体光放大器的滤波及双稳特性

提出一种基于线性变化电流注入以改善分布反馈半导体光放大器的滤波及双稳特性的实现方案，并借助耦合模方程及载流子速率方程，将该方案与相移、啁啾非均匀分布反馈半导体光放大器的特性作了分析比较。结果表明，该方法既有与相移效应相似的透射谱，又有与啁啾效应相似的频带较宽、双稳环上支较平坦的特点，且有效提高了开关对比度。     

Magnetically programmable bistable laser diode with ferromagneticlayer

A new design of bistable laser diode, which consists of a gain section, absorption section, and nonreciprocal section, is proposed. The nonreciprocal section is made of a semiconductor optical amplifier covered by a ferromagnetic layer. The nonreciprocity of magneto-optical effect significantly modifies a photon density distribution in the laser cavity and enlarges a width of hysteresis loop of bistable laser diode. The bistability can be switched on or off by reversing magnetization of the ferromagnetic layer     

All-Optical Response of Semiconductor Ring Laser to Dual-Optical Injections

The all-optical response of a semiconductor ring laser (SRL) to two optical injections is characterized. Once the lasing direction is locked by one optical injection, the SRL direction of operation can be switched by another optical injection into the counterpropagating direction. The switching process manifests a typical bistable hysteresis loop, with its width and switching thresholds variable by the first injection power. Extremely sharp transition has been measured which confirms the potential of the SRL for all-optical regeneration applications.     

吸收型双稳半导体激光器

对两段式吸收型双稳半导体激光器的速率方程组进行了解析求解,并逐点跟踪定义双稳环的关键点,确立了介质发射截面与双稳环宽度和高度的关系式。     

吸收区偏置对双稳半导体激光器输出特性的影响

文章从两段式吸收型双稳半导体激光器（ＴＡＢＬ）的速率方程组出发，数字模拟了在不同的吸收区偏置下，ＴＡＢＬ的输出功率、输出波长和输出电流环宽度等重要特性的变化，并对获得的结果进行了分析。