Structural,thermal, dielectric and ferroelectric properties of K0.5Bi0.5TiO3 ceramics

Dense K_0.5Bi_0.5TiO₃ (KBT) lead-free ceramics were prepared by conventional solid reaction route. Their temperature behavior (up to 600 °C) was investigated by X-ray diffraction, DSC, dielectric spectroscopy and electric field-polarization technique. The first temperature dependent Raman scattering studies were also performed. X-ray and Raman scattering results show that samples exhibit a single perovskite structure with cubic symmetry at temperatures higher than approximately 400 °C and with coexistence of the cubic and tetragonal phases below this temperature. Two structural phase transitions between tetragonal phases in temperature range 200–225 °C and between tetragonal and cubic ones near 400 °C are observed. The content of the tetragonal phase increases with decreasing temperature and at room temperature it reaches more than 70%. Temperature- dependent P-E loops and pyroelectric data revealed a polar behavior in KBT up to about 400 °C, which means that the intermediate phase (～270–380 °C) is rather ferroelectric than antiferroelectric.     

Influence of secondary phases on ferroelectric properties of Bi0.5Na0.5TiO3 ceramics

The effects of secondary phases on ferroelectric properties of Bi_0.5Na_0.5TiO₃ (BNT) have been studied. Ceramic powders were prepared by solid state reaction employing different sintering temperatures and characterized by X-ray diffraction (XRD), Scanning Electron Microscopy and impedance spectroscopy. The perovskite structure was detected by XRD; together with small peaks corresponding to a secondary phase assigned to the Na₂Ti₆O₁₃-based phase in calcined powders. In addition, morphology and the content of the secondary phase were modified by the sintering temperatures, affecting the ferroelectric properties, and ac and dc conductivities. We believe that our results can benefit not only the understanding of BNT ceramics, but also expand the range of applications.     

Pyroelectric,ferroelectric, piezoelectric and dielectric properties of Na0.5Bi0.5TiO3 ceramic prepared by sol-gel method

Sodium bismuth titanate (BNT) nanopowder of molar composition 50/50 (Na_0.5Bi_0.5TiO₃) was prepared by a sol-gel processing method. The structure and microstructure of the precursor gel as well as the ferroelectric, pyroelectric, dielectric and piezoelectric properties of the BNT were studied. BNT crystallized in the rhombohedra perovskites structure Na_0.5Bi_0.5TiO₃ was obtained from the precursor gel by heating at 700 °C for 2 h in air. The BNT ceramic at 1100 °C sintering temperature present high crystallinity, good dielectric properties at 1 kHz (ε′=885, tan δ=0.03, T_c=370 °C), piezoelectric properties (k₃₃=0.39, c₃₃=105 GPa, e₃₃=12.6 C/m², d₃₃=120 pC/N), high remnant polarization (P_r=47 μC/cm²) and pyroelectric coefficient ($p$=707 μC/m² K) and low coercive field (E_c=55 kV/cm). Hence, the BNT prepared by sol-gel method could be used for silicon based memory device application where a low synthesis temperature is a key requirement.     

Tuning the electrocaloric effect in 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 ceramics by relaxor phase blending

The pseudo-first-order phase transition in 0.94Bi_0.5Na_0.5TiO₃-0.06BaTiO₃ ceramics leads to a sharp increase in temperature change (ΔT) in the vicinity of the ferroelectric-to-relaxor transition temperature T_FR (~100 °C) [Appl. Phys. Lett. 110 (2017) 182904]. In this study, we add the 0.78Bi_0.5Na_0.5TiO₃-0.06BaTiO₃-0.16(Sr_0.7Bi_0.2)TiO₃ relaxor phase to the 0.94Bi_0.5Na_0.5TiO₃-0.06BaTiO₃ ferroelectric matrix to tune its electrocaloric effect. The results show that the addition of the relaxor phase plays a vital role in phase and local-structure evolution. A transition occurs between the ferroelectric and ergodic relaxor phases when the mass fraction of the latter increases to 30% (x = 0.3), as verified by X-ray diffraction analysis, Raman spectroscopy, and polarization-electric field (P-E) hysteresis loops. Furthermore, addition of the relaxor phase reduces the T_FR from 76 °C at x = 0.1–55 °C at x = 0.2; however, this transition disappears at x = 0.3 and 0.4 composite. In-situ piezo-force microscopy (PFM) images illustrate that domains can be written into x = 0.1 and 0.2 ceramics with a valley in the piezoresponse curves. Increasing the temperature agitates the domain arrangement and decreases the contrast for PFM images; this indicates a gradual phase transition in the composite. The temperature corresponding to maximum ΔT exhibits a downward shift (0.58 K at 80 °C for x = 0.1 and 0.5 K at 65 °C for x = 0.2), while the temperature-ΔT curves are flat when x = 0.3 and 0.4. Moreover, the maximum ΔT shows a decrease with an increase in the relaxor phase content; this is believed to be related to a decrease in the latent heat due to a pseudo-first-order to second-order transition. Thus, we suggest that the incorporation of a relaxor phase into ferroelectric matrices is an effective technique to tune their electrocaloric effect and improve the thermal stability of ceramic composites.     

Structure and ferroelectric behaviour of Na0.5Bi0.5TiO3-KNbO3 ceramics

Lead-free piezoelectric ceramics, (1?x)Na_0.5Bi_0.5TiO₃-xKNbO₃ (NBT-xKN), with x?=?0.02–0.08 were fabricated by solid-state reaction and sintering. The crystal structures and dielectric properties were measured for different KN contents. All compositions in the unpoled, as-sintered state were found to be single-phase pseudo-cubic. However, typical ferroelectric behaviour, with well-saturated polarisation-electric field hysteresis loops, was observed for certain compositions at high electric field levels. It is shown using high-energy synchrotron X-ray diffraction that the application of the electric field induced an irreversible structural transformation from the nano-polar pseudo-cubic phase to a ferroelectric rhombohedral phase. The changes in lattice elastic strain and crystallographic texture of a poled NBT-0.02KN specimen as a function of the grain orientation, ψ, conform well to those expected for a conventional rhombohedrally distorted perovskite ferroelectric ceramic. The dielectric permittivity-temperature relationships for all compositions exhibit two transition temperatures and a frequency-dependent behaviour that is typical of a relaxor ferroelectric. The transition temperatures and grain size decrease with the increasing KN content.     

Enhancement of pyroelectric properties of lead-free 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 ceramics by La doping

Lead-free 0.94NBT-0.06BT-xLa ceramics at x = 0.0–1.0 (%) were synthesized by a conventional solid-state route. XRD shows that the compositions are at a morphotropic phase boundary where rhombohedral and tetragonal phases coexist. With increasing La³⁺ content pyroelectric coefficient (p) and figures of merits greatly increase; however, the depolarization temperature (T_d) decreases. p is 7.24 × 10⁻⁴C m⁻² °C⁻¹ at RT at x = 0.5% and 105.4 × 10⁻⁴C.m^−2 °C⁻¹ at T_d at x = 0.2%. F_i and F_v show improvements at RT from 1.12 (x = 0%) to 2.65 (x10 ⁻¹⁰ m v⁻¹) (x = 0.5%) and from 0.021 to 0.048 (m².C⁻¹) respectively. F_i and F_v show a huge increase to 37.6 × 10⁻¹⁰ m v⁻¹ and 0.56 m² C⁻¹ respectively at T_d at x = 0.2%. F_C shows values of 2.10, 2.89, and 2.98 (x10⁻⁹C cm⁻² °C⁻¹) at RT at 33, 100 and 1000 (Hz) respectively. Giant pyroelectric properties make NBT-0.06BT-xLa at x = 0.2% and 0.5% promising materials for many pyroelectric applications.     

Influence of the stoichiometry,microstructure, and metallization method on the dielectric properties of 0.94 Na0.5Bi0.5TiO3-0.06 BaTiO3

The morphotropic composition of the lead-free solid solution between Na_0.5Bi_0.5TiO₃ and BaTiO₃ (0.94 Na_0.5Bi_0.5TiO₃-0.06 BaTiO₃ or NBT-6BT) is of particular interest for the next generation of high-temperature capacitors but remains plagued by the diversity of dielectric properties reported in the literature. In order to explain the apparent inconsistencies among the reported dielectric properties of NBT-6BT, we examine the influence of stoichiometry, phase separation, and metallization method. We show that the nominal stoichiometry has a crucial effect, since increasing the nominal Na/Bi ratio increases conductivity and dielectric losses (tan δ). It also increases the real part of the permittivity (ε’) and the frequency dispersion of both ε’ and tan δ, thereby altering the shape of the evolution with temperature of the dielectric properties. Moreover it increases the depolarization temperature (T_d) and decreases the temperature of maximum permittivity (T_m). Phase separation also occurs during the synthesis of NBT-6BT as Na evaporation leads to the formation of secondary Ba-containing phases. We report that these phases can have a positive impact on the dielectric properties: a moderate volume fraction (2.5 to 3.0%) and average grain surface (0.9 to 3.0 µm²) of these secondary Ba-containing phases increase the relative permittivity, decrease the dielectric losses, and increase the insulation resistance. We also show that the metallization method impacts the dielectric properties and therefore may contribute to the differences between various reports. The dielectric properties of NBT-6BT samples are measured during successive heating/cooling cycles and reveal that the permittivity value is lower during the first heating when silver paste, even cured, is used. These three components contribute to explaining the diversity of the reported dielectric properties of NBT-6BT.     

Microstructure,ferroelectric and piezoelectric properties of Bi4Ti3O12 platelet incorporated 0.36BiScO3-0.64PbTiO3 thick films for high temperature piezoelectric device applications

Bi₄Ti₃O₁₂ (BiT) platelet incorporated 0.36BiScO₃-0.64PbTiO₃ (BS-PT) thick films were successfully developed for high temperature piezoelectric device applications. Their microstructure and ferroelectric and piezoelectric properties were systematically investigated to demonstrate the effect of the BiT template. It was found that the incorporation of BiT template was not responsible for textured grain growth of the BS-PT thick films; however, it could result in grain growth and densification of the BS-PT thick films by optimizing the sintering temperature and amount of BiT template. In particular, a 4 wt% BiT-incorporated BS-PT thick film sintered at 1000°C exhibited a pure perovskite structure and excellent piezoelectric properties of d₃₃ (440 pC/N) and k_p (53%), despite the presence of micro-pores caused by molten BiT. The BS-PT thick film, exhibiting good ferroelectric characteristics of P_r of 39.4 μC/cm² and E_c of 3.0 kV/mm at 1 kHz, also had an extremely high T_c of approximately 402°C. This implies that the BiT platelet incorporated BS-PT thick film is applicable for high temperature piezoelectric devices.     

0-3 type magnetoelectric 0.94Na0.5Bi0.5TiO3-0.06BaTiO3:CoFe2O4 composite ceramics with a deferred thermal depolarization

Developing Na_0.5Bi_0.5TiO₃-based magnetoelectric (ME) coupling composites with higher depolarization temperature is highly valuable for the environment-friendly smart electronic devices. We have developed a new kind of 0-3 type 0.94Na_0.5Bi_0.5TiO₃-0.06BaTiO₃:xCoFe₂O₄ (NBTBT:xCFO, x = 0, 0.1, 0.2, 0.3) composite ceramics with a deferred depolarization temperature, together with an additional strong ME coupling of 9.2 mV/cm·Oe for the NBTBT:0.2CFO. The basic structure, ferroelectric/ferromagnetic properties, and the depolarization temperature of the NBTBT:xCFO composite ceramics were investigated. It was found that an enhancement of depolarization temperature (>25 °C) was obtained in these 0-3 type composites relative to the pure NBTBT ones (115 °C vs 90 °C). The mechanism of the enhanced depolarization temperature of the composites is discussed. The present results demonstrate that NBTBT:xCFO composites have great potential for ME devices.     

Effects of Sm-substitution on dielectric,ferroelectric, and piezoelectric properties of 0.36(Bi1-xSmx)ScO3-0.64PbTiO3 ceramics

Dielectric, ferroelectric, and piezoelectric properties of 0.36(Bi_1-xSm_x)ScO₃-0.64PbTiO₃ (BSPT-xSm) ceramics were investigated to assess effects of Sm-substitution on 0.36BiScO₃-0.64PbTiO₃ for high temperature piezoelectric device application. Optimal sintering was achieved at 1200°C when the BSPT-xSm ceramics were fully densified and crystallized with a perovskite structure without any secondary phase. The substitution of Bi³⁺ with Sm resulted in degradation of rhombohedral side in BSPT-xSm ceramics having morphotropic phase boundary. In addition, variations of grain size and ferroelectric behavior after Sm-substitution were insignificant. However, dielectric constant (ε^T₃₃/ε₀) was significantly enhanced with an increasing of amount of Sm to 5%. Although a slight decrease of relative density in case of x exceeding 3% led to deterioration of piezoelectric values of d₃₃, k_p, and d₃₃*, the BSPT-3%Sm ceramic exhibited excellent values of d₃₃ of 628 pC/N, k_p of 62.4%, and d₃₃* of 718 pm/V at 4.5 kV/mm, along with a high ferroelectric transition temperature of 421°C. The highly increased diffusion coefficient of 1.909 also implies that the Sm-substitution contributed to relaxor-like ferroelectric behavior of BSPT ceramics.     

(Bi0.5Na0.5)TiO3 ferroelectric ceramics: Achieving high depolarization temperature and improved piezoelectric properties

(Bi_1/2Na_1/2)TiO₃-based materials have received much attention due to large electro-strain and high piezoelectric constant (d₃₃), but the tough issue is that the existence of inherent depolarization temperature (T_d) limits the temperature stability and application temperature range. Previously, reports about the formation of BNT/oxide (i.e., ZnO, Al₂O₃) composites thought that T_d can be deferred to a higher temperature and then thermal depolarization improves. However, the deferred T_d of BNT/oxide composites is limited, accompanied by a low d₃₃. Here, we design the {[Bi_0.5(Na_0.8K_0.2)_0.5]_1-xPb_x}TiO₃ ceramics, leading to a big shift of T_d from 77 ℃ to 390 ℃. Large d₃₃ (140 pC/N) and high T_d (∼263 ℃) can be simultaneously achieved for the sample with Pb=0.05, and T_d could be further deferred higher (390 ℃) for Pb=0.20. The off-centre displacement of Pb induced by Pb-O hybridization in the PbO₁₂ polyhedron and ferroelectric order stabilized by the addition of Pb can provide the driving force to strengthen the ferroelectric order, and then promote the thermal stability.     

Nb-doped BaTiO3-(Bi0.5Na0.5)TiO3 ceramics with core-shell structure for high-temperature dielectric applications

Nb-doped 0.90BaTiO₃-0.10(Bi_0.5Na_0.5)TiO₃ temperature-insensitive ceramics with novel core-shell structure were sintered at low temperature by the conventional solid-state reaction method. The beneficial role of Nb in facilitating the formation of core-shell structure because of chemical inhomogeneity is verified, which is responsible for the weak temperature dependence of dielectric properties. Temperature dependence of permittivity measured at different frequencies shows high frequency dispersion at low temperature, while without relaxor characteristic at high temperature. The Vogel–Fulcher model was adopted to study the relaxor behaviour of Nb-doped 0.90BaTiO₃-0.10(Bi_0.5Na_0.5)TiO₃ ceramics at low temperature. The samples with an addition of 1.5?mol% Nb₂O₅ provide a temperature coefficient of capacitance meeting the requirements of the X9R characteristic, and result exhibits an optimum dielectric behaviour of ε_r ～1900, tanδ ～1.8% at room temperature, making the material a promising candidate for high temperature applications.     

Dielectric and ferroelectric properties of Ta-modified Bi3.25La0.75Ti3O12 ceramics

B-site modified Bi_3.25La_0.75Ti_3-xTa_xO₁₂ ceramics were prepared by the conventional solid-state reaction method. The influence of Ta₂O₅ on microstructure and electric properties of the ceramics was investigated. The results demonstrated that Ta⁵⁺ ions were dissolved into the perovskite lattice and homogeneously distributed in the matrix without forming any minority phase. The conduction mechanism and dielectric response behavior were transformed with Ta substation, which is triggered by varied structural distortion characteristics and defect diploes. The Curie temperature decreased gradually with increasing Ta content and a relaxor-like behavior was observed for x = 0.09 sample. The internal bias field is decreased with Ta doping, because the substitution of Ta⁵⁺ at B-site contributes to release the involved oxygen vacancies in defect diploes. Moreover, further increasing Ta content causes a reduction in the oxygen vacancies located at lattice misfits, resulting in a decrease of coercive fields. An improved ferroelectric properties were obtained for x = 0.09 sample with a relatively lower coercive field and a larger spontaneous polarization.     

Polarization behavior of` lead-free 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 thin films with enhanced ferroelectric properties

(Bi_0.5Na_0.5)TiO₃ based ferroelectric lead-free thin films have great potential for modern micro-devices. However, the multicomponent feature and volatile nature of Bi/Na makes the achievement of high quality films challenging. In this work, the morphotropic phase boundary composition, 0.94(Bi_0.5Na_0.5)TiO₃-0.06BaTiO₃ thin films were successfully prepared by CSD method. Dense films with low dielectric loss and low leakage current density were obtained. A well-defined polarization hysteresis loop with a high remnant polarization was observed in the thin films. Moreover, the polarization behavior of the film at original state, under electric field and upon heating was investigated by PFM. A self-polarization and asymmetric domain switching behavior were observed. High temperature induced depolarization and the self-polarization recovered upon cooling. The thin films with good quality show a promising potential for the application in electrical devices, and the in-depth investigation of the polarization behavior improves the understanding of ferroelectric and piezoelectric properties of thin films.     

Effect of Fe substitution on the piezoelectric,dielectric and ferroelectric properties of PNZST ceramics

Fe-doped (Pb_0.99Nb_0.02)[(Zr_0.70Sn_0.30)_0.52Ti_0.48]_0.98O₃ (PNZST) ceramics were prepared via conventional solid state reaction method, and the effect of Fe doping on their structural and electrical properties was investigated in detail. Results showed that Fe³⁺ cations could dissolve into readily the B-sites of perovskite structure for the PNZST ceramics with the less amount of Fe content (≤0.8 wt%), resulting in the full densification after sintered at 1300 °C. Meanwhile, Fe doping caused a structure transform from the tetragonal to the rhombohedral. The better electric properties for PNZST ceramic with 0.6 wt% Fe content were obtained, i.e. piezoelectric constant d₃₃=380 pC/N, electromechanical coupling factor k_p=0.57, mechanical quality factor Q_m=225, dielectric constant ε_r=1190, loss tangent tan δ=0.007 and curie temperature T_c=318 °C.     

Effect of closed pores on dielectric properties of 0.8Na0.5Bi0.5TiO3-0.2K0.5Bi0.5TiO3 porous ceramics

Porous 0.8Na_0.5Bi_0.5TiO₃-0.2K_0.5Bi_0.5TiO₃ ceramics are fabricated via the pore-forming agent method with polymethyl methacrylate (PMMA) and stearic acid (SA) as pore forming agents, and microstructure observations demonstrate that the porosity, pore shape, and pore sizes can be controlled by the synthesis technology. The dielectric properties of porous ceramics are found not only correlated to the pore-matrix composite model, but also have a significant grain-size effect. Based on the Zener Theory, pining forces exerted by pores on the grain boundary are calculated, to explain the shape effect of pores on grain boundary migration. A phase-field simulation is carried out to investigate pore shape effect on the grain size regulation in porous polycrystalline, and simulation results are in good agreements with experiential results as well as theoretical calculations. Thus, a modified equation is proposed to predict the effective permittivity of the porous piezoelectric ceramics by considering effects of porosity, pore shape and grain size.     

Improved ferroelectric,piezoelectric, and dielectric properties in pure KNN translucent ceramics by optimizing the normal sintering method

In this study, it is reported that various properties can be selectively derived in a pure (K_0.5Na_0.5)NbO₃, KNN ceramics through optimizing the sintering temperature by the conventional sintering method. High piezoelectric, ferroelectric, and dielectric properties such as d₃₃ = 127 pC/N, P_r = 31 μC/cm², and ε_r = 767 are obtained at the sintering temperature of 1100 °C. On the contrary, the specimen sintered at 1130 °C does not show high piezoelectric and ferroelectric properties, but it is translucent with a transmittance of 22% and 57% at the wavelength of 800 and 1600 nm respectively and shows a very high dielectric constant ε_r of 881. The origin of the high piezoelectric constant owes to large remanent polarization and dielectric constant, and dense microstructure with uniform distribution of large grains with the conjunction of relatively large crystal anisotropy. On the other hand, dense microstructure with almost no porosity, highly compacted grain boundaries, uniform distribution of grains, and relatively low crystalline anisotropy are responsible for the translucency and large dielectric constant of the ceramic specimens. This study demonstrates that the lead-free KNN ceramic has the potential to show multiple noteworthy properties such as piezoelectric, ferroelectric, dielectric, and transparent properties. This work provides a pure KNN ceramic simultaneously with high piezoelectric and transparent characteristics prepared only by using the conventional sintering method at a moderate sintering temperature for the first time in the literature.     

Enhanced dielectric and piezoelectric properties in Na0.5Bi4.5Ti4O15 ceramics with Pr-doping

The bismuth layer-structured Na_0.5Bi_4.5-xPr_xTi₄O₁₅ (x?=?0, 0.1, 0.2, 0.3, 0.4, and 0.5) (NBT-xPr³⁺) ceramics were fabricated using the traditional solid reaction process. The effect of different Pr³⁺ contents on dielectric, ferroelectric and piezoelectric properties of Na_0.5Bi_4.5Ti₄O₁₅ ceramics were investigated. The grain size of Pr³⁺-doping ceramics was found to be smaller than that of pure one, the maximum dielectric constant and Curie temperature T_c gradually decreased with increasing Pr³⁺ contents, and the dielectric loss decreased at high temperature by Pr³⁺-doping. Moreover, the activation energy (E_a), resistivity (Z’), remanent polarization (2P_r) and piezoelectric constant (d₃₃) increased by Pr³⁺-doping. The NBT-xPr³⁺ ceramics with x?=?0.3 achieved the optimal properties with the maximum dielectric constant of 1109.18, minimum loss of 0.00822 (250?kHz), E_a of 1.122?eV, Z’ of 7.9?kΩ?cm (725 ºC), d₃₃ of 18 pC/N, 2P_r of 12.04 μC/cm². The enhancement was due to the addition of Pr³⁺ which suppressed the decreasing of resistivity at high temperature and made it possible for NBT-xPr³⁺ ceramics to be poled in perpendicular direction, implying that it is a great improvement for Na_0.5Bi_4.5Ti₄O₁₅ ceramics in electrical properties.     

Lead-free BaTiO3-Bi0.5Na0.5TiO3-Na0.73Bi0.09NbO3 relaxor ferroelectric ceramics for high energy storage

A series of (1-x)(0.65BaTiO₃-0.35Bi_0.5Na_0.5TiO₃)-xNa_0.73Bi_0.09NbO₃ ((1-x)BBNT-xNBN) (x = 0–0.14) ceramics were designed and fabricated using the conventional solid-state sintering method. The microstructure, dielectric property, relaxor behavior and energy storage property were systematically investigated. X-ray diffraction results reveal a pure perovskite structure and dielectric measurements exhibit a relaxor behavior for the (1-x)BBNT-xNBN ceramics. The slim polarization electric field (P-E) loops were observed in the samples with x ≥ 0.02 and the addition of Na_0.73Bi_0.09NbO₃ (NBN) could decrease the remnant polarization (P_r) of the (1-x)BBNT-xNBN ceramics obviously. The sample with x = 0.08 exhibits the highest energy storage density of 1.70 J/cm³ and the energy storage efficiency of 82% at 172 kV/cm owing to its submicron grain size and high relative density. These results show that the (1-x)BBNT-xNBN ceramics may be promising lead-free materials for high energy storage density capacitors.