Mechanical and thermal properties of silicon carbide ceramics with yttria–scandia–magnesia

Two different SiC ceramics with a new additive composition (1.87 wt% Y₂O₃–Sc₂O₃–MgO) were developed as matrix materials for fully ceramic microencapsulated fuels. The mechanical and thermal properties of the newly developed SiC ceramics with the new additive system were investigated. Powder mixtures prepared from the additives were sintered at 1850 °C under an applied pressure of 30 MPa for 2 h in an argon or nitrogen atmosphere. We observed that both samples could be sintered to ≥99.9% of the theoretical density. The SiC ceramic sintered in argon exhibited higher toughness and thermal conductivity and lower flexural strength than the sample sintered in nitrogen. The flexural strength, fracture toughness, Vickers hardness, and thermal conductivity values of the SiC ceramics sintered in nitrogen were 1077 ± 46 MPa, 4.3 ± 0.3 MPa·m^1/2, 25.4 ± 1.2 GPa, and 99 Wm⁻¹ K⁻¹ at room temperature, respectively.     

Thermal and electrical properties of additive-free rapidly hot-pressed SiC ceramics

The thermal and electrical properties of newly developed additive free SiC ceramics processed at a temperature as low as 1850 °C (RHP0) and SiC ceramics with 0.79 vol.% Y₂O₃-Sc₂O₃ additives (RHP79) were investigated and compared with those of the chemically vapor-deposited SiC (CVD-SiC) reference material. The additive free RHP0 showed a very high thermal conductivity, as high as 164 Wm⁻¹ K⁻¹, and a low electrical resistivity of 1.2 × 10⁻¹ Ω cm at room temperature (RT), which are the highest thermal conductivity and the lowest electrical resistivity yet seen in sintered SiC ceramics processed at ≤1900 °C. The thermal conductivity and electrical resistivity values of RHP79 were 117 Wm⁻¹ K⁻¹ and 9.5 × 10⁻² Ω cm, respectively. The thermal and electrical conductivities of CVD-SiC parallel to the direction of growth were ∼324 Wm⁻¹ K⁻¹ and ∼5 × 10⁻⁴Ω⁻¹ cm⁻¹ at RT, respectively.     

Pressureless sintered silicon carbide matrix with a new quaternary additive for fully ceramic microencapsulated fuels

This study suggests a new additive composition based on AlN–Y₂O₃–Sc₂O₃–MgO to achieve successful densification of SiC without applied pressure at a temperature as low as 1850 °C. The typical sintered density, flexural strength, fracture toughness, and hardness of the SiC ceramics sintered at 1850 °C without applied pressure were determined as 98.3%, 510 MPa, 6.9 MPa·m^1/2, and 24.7 GPa, respectively.Fully ceramic microencapsulated (FCM) fuels containing 37 vol% tristructural isotropic (TRISO) particles could be successfully sintered at 1850 °C using the above matrix without applied pressure. The residual porosity of the SiC matrix in the FCM fuels was only 1.6%. TRISO particles were not damaged during processing, which included cold isostatic pressing under 204 MPa and sintering at 1850 °C for 2 h in an argon atmosphere. The thermal conductivity of the pressureless sintered FCM pellet with 37 vol% TRISO particles was 44.4 Wm^?1 K^?1 at room temperature.     

High-strength AlN ceramics by low-temperature sintering with CaZrO3–Y2O3 co-additives

Aluminum nitride (AlN) ceramics with the concurrent addition of CaZrO₃ and Y₂O₃ were sintered at 1450-1700 °C. The degree of densification, microstructure, flexural strength, and thermal conductivity of the resulting ceramics were evaluated with respect to their composition and sintering temperature. Specimens prepared using both additives could be sintered to almost full density at relatively low temperature (3 h at 1550 °C under nitrogen at ambient pressure); grain growth was suppressed by grain-boundary pinning, and high flexural strength over 630 MPa could be obtained. With two-step sintering process, the morphology of second phase was changed from interconnected structure to isolated structure; this two-step process limited grain growth and increased thermal conductivity. The highest thermal conductivity (156 Wm⁻¹ K⁻¹) was achieved by two-step sintering, and the ceramic showed moderate flexural strength (560 MPa).     

Effects of SiC whisker addition on mechanical,thermal, and permeability properties of porous silica-bonded SiC ceramics

The effects of SiC whisker addition into nano-SiC powder-carbon black template mixture on flexural strength, thermal conductivity, and specific flow rate of porous silica-bonded SiC ceramics were investigated. The flexural strength of 1200°C-sintered porous silica-bonded SiC ceramics increased from 9.5 MPa to 12.8 MPa with the addition of 33 wt% SiC whisker because the SiC whiskers acted as a reinforcement in porous silica-bonded SiC ceramics. The thermal conductivity of 1200°C-sintered porous silica-bonded SiC ceramics monotonically increased from 0.360 Wm^–1K^–1 to 1.415 Wm^–1K^–1 as the SiC whisker content increased from 0 to 100 wt% because of the easy heat conduction path provided by SiC whiskers with a high aspect ratio. The specific flow rate of 1200°C-sintered porous SiC ceramics increased by two orders of magnitude as the SiC whisker content increased from 0 to 100 wt%. These results were primarily attributed to an increase in pore size from 125 nm to 565 nm and secondarily an increase in porosity from 49.9% to 63.6%. In summary, the addition of 33 wt% SiC whisker increased the flexural strength, thermal conductivity, and specific flow rate of porous silica-bonded SiC ceramics by 35%, 133%, and 266%, respectively.     

Electrically conductive SiC ceramics processed by pressureless sintering

Polycrystalline SiC ceramics with 10 vol% Y₂O₃-AlN additives were sintered without any applied pressure at temperatures of 1900-2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 10¹ to 1.9 × 10⁻² Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain-growth-induced N-doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω⁻¹·cm⁻¹ at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid-phase sintered SiC ceramics.     

Joining of silicon carbide ceramics using a silicon carbide tape

This paper reports the joining of liquid-phase sintered SiC ceramics using a thin SiC tape with the same composition as base SiC material. The base SiC ceramics were fabricated by hot pressing of submicron SiC powders with 4 wt% Al₂O₃–Y₂O₃–MgO additives. The base SiC ceramics were joined by hot-pressing at 1800-1900°C under a pressure of 10 or 20 MPa in an argon atmosphere. The effects of sintering temperature and pressure were examined carefully in terms of microstructure and strength of the joined samples. The flexural strength of the SiC ceramic which was joined at 1850°C under 20 MPa, was 343 ± 53 MPa, higher than the SiC material (289 ± 53 MPa). The joined SiC ceramics showed no residual stress built up near the joining layer, which was evidenced by indentation cracks with almost the same lengths in four directions.     

Mechanical and Thermal Properties of Pressureless Sintered Silicon Carbide Ceramics with Alumina–Yttria–Calcia

The effect of sintering temperature on the mechanical and thermal properties of SiC ceramics sintered with Al₂O₃–Y₂O₃–CaO without applied pressure was investigated. SiC ceramics containing A₂O₃–Y₂O₃–CaO as sintering additives can be sintered to >97% theoretical density at temperatures between 1750°C and 1900°C without applied pressure. A toughened microstructure, consisting of relatively large elongated grains and relatively small equiaxed grains, has been obtained when sintered at temperatures as low as 1800°C for 2 h in an argon atmosphere without applied pressure. The achievement of toughened microstructures under such mild conditions is the result of the additive composition. The thermal conductivity of the SiC ceramics increased with increasing sintering temperature because of the decrease in the lattice oxygen content of the SiC grains. Typical sintered density, flexural strength, fracture toughness, hardness, and thermal conductivity of the 1850°C‐sintered SiC, which consisted of 62.2% 4H, 35.7% 6H, and 2.1% 3C, were 99.0%, 628 MPa, 5.3 MPa·m^1/2, 29.1 GPa, and 80 W·(m·K)^?1, respectively.     

Influence of sintering atmosphere and BN additives on microstructure and properties of porous SiC ceramics

The effects of the boron nitride (BN) content on the electrical, thermal, and mechanical properties of porous SiC ceramics were investigated in N₂ and Ar atmospheres. The electrical resistivity was predominantly controlled by the sintering atmosphere and secondarily by the BN concentration, whereas the thermal conductivity and flexural strength were more susceptible to changes in the porosity and necking area between the SiC grains. The electrical resistivities of argon-sintered porous SiC ceramics (6.3 × 10⁵ – 1.6 × 10⁶ Ω·cm) were seven orders of magnitude higher than those of nitrogen-sintered porous SiC ceramics (1.5 × 10⁻¹ – 6.0 × 10⁻¹ Ω·cm). The thermal conductivity and flexural strength of the argon-sintered porous SiC ceramics increased from 8.4–11.6 W·m⁻¹ K⁻¹ and from 9.3–28.2 MPa, respectively, with an increase in the BN content from 0 to 1.5 vol%, which was attributed to the increase in necking area and the decrease in porosity.     

Effects of yttria and magnesia on densification and thermal conductivity of sintered reaction-bonded silicon nitrides

A variety of combinations of Y₂O₃ and MgO were used as additives in preparing Si₃N₄ ceramics by the sintering of reaction-bonded silicon nitride (SRBSN) method. By varying the amount of Y₂O₃ in the range of 0-5 mol% and that of MgO in the range of 0-8 mol%, the effects of Y₂O₃ and MgO additives on nitridation and sintering behaviors as well as thermal conductivity were studied. It was found that appropriate amount and combination of Y₂O₃ and MgO additives were essential for attaining full densification and achieving high thermal conductivity. The sample doped with 2.5 mol% of Y₂O₃ and 5 mol% of MgO attained a thermal conductivity of 128 Wm⁻¹K⁻¹ when sintered at 1900°C for 6 hours, and the sample doped with 2 mol% of Y₂O₃ and 4 mol% of MgO achieved a thermal conductivity of 156 Wm⁻¹K⁻¹ when sintered for 24 hours.     

Pressureless sintering of SiC ceramics with improved specific stiffness

The effects of B₄C content on the specific stiffness and mechanical and thermal properties of pressureless-sintered SiC ceramics were investigated. SiC ceramics containing 2.5 wt% C and 0.7–20 wt% B₄C as sintering aids could be sintered to ≥ 99.4% of the theoretical density at 2150 °C for 1 h in Ar. The specific stiffness of SiC ceramics increased from 136.1 × 10⁶ to 144.4 × 10⁶ m²‧s⁻² when the B₄C content was increased from 0.7 to 20 wt%. The flexural strength and fracture toughness of the SiC ceramics were maximal with the incorporation of 10 wt% B₄C (558 MPa and 3.69 MPa‧m^1/2, respectively), while the thermal conductivity decreased from ∼154 to ∼83 W‧m⁻¹‧K⁻¹ when the B₄C content was increased from 0.7 to 30 wt%. The flexural strength and thermal conductivity of the developed SiC ceramic containing 20 wt% B₄C were ∼346 MPa and ∼105 W‧m⁻¹‧K⁻¹, respectively.     

Microstructure and properties of porous SiC ceramics with AlN–RE2O3 (RE = Sc,Y, Lu) additives

The intrinsic microstructure and crystalline phases of porous SiC ceramics with 5 vol% AlN–RE₂O₃ (RE = Sc, Y, Lu) additives were characterized by high-resolution transmission microscopy with energy-dispersive spectroscopy and X-ray diffraction. The homophase (SiC/SiC) and heterophase (SiC/junction) boundaries were found to be clean; that is, amorphous films were not observed in the specimens. In addition, ScN, YN, and LuN were formed as secondary phases. The flexural strength and thermal conductivity of the ceramics were successfully tuned using different additive compositions. The flexural strength of the ceramics improved by a factor of ~3, from 11.7 MPa for the specimen containing Y₂O₃ to 34.2 MPa for that containing Sc₂O₃, owing to the formation of a wide necking area between SiC grains. For the same reason, the thermal conductivity improved by ~56%, from 9.2 W·m^?1·K^?1 for the specimen containing Lu₂O₃ to 14.4 W·m^?1·K^?1 for that containing Sc₂O₃.     

Process-tolerant pressureless-sintered silicon carbide ceramics with alumina-yttria-calcia-strontia

Process-tolerant SiC ceramics were prepared by pressureless sintering at 1850–1950 °C for 2 h in an argon atmosphere with a new quaternary additive (Al₂O₃-Y₂O₃-CaO-SrO). The SiC ceramics can be sintered to a > 94% theoretical density at 1800–1950 °C by pressureless sintering. Toughened microstructures consisting of relatively large platelet grains and small equiaxed grains were obtained when SiC ceramics were sintered at 1850–1950 °C. The presently fabricated SiC ceramics showed little variability of the microstructure and mechanical properties with sintering within the temperature range of 1850–1950 °C, demonstrating process-tolerant behavior. The thermal conductivity of the SiC ceramics increased with increasing sintering temperature from 1800 °C to 1900 °C due to decreases of the lattice oxygen content of the SiC grains and residual porosity. The flexural strength, fracture toughness, and thermal conductivity of the SiC ceramics sintered at 1850–1950 °C were in the ranges of 444–457 MPa, 4.9–5.0 MPa m^1/2, and 76–82 Wm^?1 K^?1, respectively.     

Plastic deformation-induced improved mechanical and thermal properties in hot-forged SiC-TiC composite

A novel SiC-20 vol% TiC composite prepared via a two-step sintering technique using 6.5 vol% Y₂O₃-Sc₂O₃-MgO exhibited high deformation (60 %) on hot forging attributed to the high-temperature plasticity of TiC (ductile to brittle transition temperature ～800 °C) and fine-grained microstructure (～276 nm). The newly developed SiC-TiC composite exhibited a ～2-fold increase in nominal strain as compared to that of monolithic SiC. The plastic deformation caused by grain-boundary sliding in monolithic SiC was supplemented by the plastic deformation of TiC in the SiC-TiC composite. The hot-forged composite exhibited anisotropy in its microstructure and mechanical and thermal properties due to the preferred alignment of α-SiC platelets formed in situ. The relative density, flexural strength, fracture toughness, and thermal conductivity of the composite increased from 98.4 %, 608 MPa, 5.1 MPa?m^1/2, and 34.6 Wm^?1 K^?1 in the as-sintered specimen to 99.9 %, 718–777 MPa, 6.9–7.8 MPa?m^1/2, and 54.8–74.7 Wm^?1 K^?1, respectively, on hot forging.     

Process induced alignment of carbon nanotube decreases longitudinal thermal conductivity of Al2O3 based porous composites

Alumina (Al₂O₃) based porous composites, reinforced with zirconia (ZrO₂), 3 and 8 mol% Y₂O₃ stabilized ZrO₂ (YSZ) and 4 wt% carbon nanotube (CNT) are processed via spark plasma sintering. The normalized linear shrinkage during sintering process of Al₂O₃-based composite shows minimum value (19.2–20.4%) for CNT reinforced composites at the temperature between 1650 °C and 575 °C. Further, the combined effect of porosity, phase-content and its crystallite size in sintered Al₂O₃-based porous composite have elicited lowest thermal conductivity of 1.2 Wm⁻¹K⁻¹ (Al₂O₃-8YSZ composite) at 900 °C. Despite high thermal conductivity of CNT (∼3000 Wm⁻¹K⁻¹), only a marginal thermal conductivity increase (∼1.4 times) to 7.3–13.4 Wm⁻¹K⁻¹ was observed for CNT reinforced composite along the longitudinal direction at 25 °C. The conventional models overestimated the thermal conductivity of CNT reinforced composites by up to ∼6.7 times, which include the crystallite size, porosity, and interfacial thermal resistance of Al₂O₃, YSZ and, CNT. But, incorporation of a new process induced CNT-alignment factor, the estimated thermal conductivity (of <6.6 Wm⁻¹K⁻¹) closely matched with the experimental values. Moreover, the high thermal conductivity (<76.1 Wm⁻¹K⁻¹) of the CNT reinforced porous composites along transverse direction confirms the process induced alignment of CNT in the spark plasma sintered composites.     

Processing and properties of silica-bonded porous nano-SiC ceramics with extremely low thermal conductivity

Silica-bonded porous nano-SiC ceramics with extremely low thermal conductivity were prepared by sintering nano-SiC powder-carbon black template compacts at 600–1200 °C for 2 h in air. The microstructure of the silica-bonded porous nano-SiC ceramics consisted of SiC core/silica shell particles, a silica bonding phase, and hierarchical (meso/macro) pores. The porosity and thermal conductivity of the silica-bonded porous nano-SiC ceramics can be controlled in the ranges of 8.5–70.2 % and 0.057–2.575 Wm⁻¹ K⁻¹, respectively, by adjusting both, the sintering temperature and template content. Silica-bonded porous nano-SiC ceramics with extremely low thermal conductivity (0.057 Wm⁻¹ K⁻¹) were developed at a very low processing temperature (600 °C). The typical porosity, average pore size, compressive strength, and specific compressive strength of the porous nano-SiC ceramics were ∼70 %, 50 nm, 2.5 MPa, and 2.7 MPa·cm³/g, respectively. The silica-bonded porous nano-SiC ceramics were thermally stable up to 1000 °C in both air and argon atmospheres.     

Effects of YH2 addition on pressureless sintered AlN ceramics

A new type of non-oxide sintering additive of YH₂ was introduced for the fabrication of AlN ceramics with high thermal conductivity and flexural strength. The effects of YH₂ addition (0–5 wt%) on the phase composition, densification, microstructure, thermal conductivity and flexural strength of pressureless sintered AlN ceramics were investigated and compared with those Y₂O₃-added samples (1–5 wt%). The addition of 1 wt% YH₂ led to an in-situ reduction reaction with oxygen impurities, the formation of Y₂O₃ and finally the formation of yttrium aluminate, which in turn improved densification and microstructure. A high flexural strength (408.69 ± 28.23 MPa) was achieved. The addition of 3 wt% YH₂ increased the average grain size and purified the lattice. All these effects are believed to help achieve a high thermal conductivity of 184.82 ± 1.75 W·m^?1·K^?1. Although the thermal conductivity was close to the value of 3 wt% Y₂O₃-added sample, its strength was much increased to 381.53 ± 43.41 MPa. Meanwhile, it demonstrated a good combination of the thermal conductivity and flexural strength than the values reported in some literature. However, further increasing the YH₂ addition to 5 wt% resulted in a high N/O ratio that inhibited the densification behavior of AlN ceramics. The current study showed that AlN ceramics with excellent thermal and mechanical properties could be obtained by the introduction of a suitable YH₂ additive.     

Highly electrically and thermally conductive silicon carbide-graphene composites with yttria and scandia additives

Dense silicon carbide/graphene nanoplatelets (GNPs) and silicon carbide/graphene oxide (GO) composites with 1 vol.% equimolar Y₂O₃–Sc₂O₃ sintering additives were sintered at 2000 °C in nitrogen atmosphere by rapid hot-pressing technique. The sintered composites were further annealed in gas pressure sintering (GPS) furnace at 1800 °C for 6 h in overpressure of nitrogen (3 MPa). The effects of types and amount of graphene, orientation of graphene sheets, as well as the influence of annealing on microstructure and functional properties of prepared composites were investigated. SiC-graphene composite materials exhibit anisotropic electrical as well as thermal conductivity due to the alignment of graphene platelets as a consequence of applied high uniaxial pressure (50 MPa) during sintering. The electrical conductivity of annealed sample with 10 wt.% of GNPs oriented parallel to the measuring direction increased significantly up to 118 S·cm⁻¹. Similarly, the thermal conductivity of composites was very sensitive to the orientation of GNPs. In direction perpendicular to the GNPs the thermal conductivity decreased with increasing amount of graphene from 180 W·m⁻¹ K⁻¹ to 70 W·m⁻¹ K⁻¹, mainly due to the scattering of phonons on the graphene – SiC interface. In parallel direction to GNPs the thermal conductivity varied from 130 W·m⁻¹ K⁻¹ up to 238 W·m⁻¹ K⁻¹ for composites with 1 wt.% of GO and 5 wt.% of GNPs after annealing. In this case both the microstructure and composition of SiC matrix and the good thermal conductivity of GNPs improved the thermal conductivity of composites.     

High interfacial thermal resistance induced low thermal conductivity in porous SiC-SiO2 composites with hierarchical porosity

The incorporation of a thermally insulating secondary phase can significantly increase the interfacial thermal resistance attributed to its low intrinsic thermal conductivity and the creation of multiple phonon scattering interfaces between adjacent SiC particles. The newly developed porous SiC-33 wt% SiO₂ composites with SiO₂ as a thermally insulating secondary phase exhibited a very low thermal conductivity (0.047 Wm⁻¹ K⁻¹, 72.4 % porous), which is an order of magnitude lower than the previously reported lowest thermal conductivity (0.14 Wm⁻¹ K⁻¹, 76.3 % porous) for powder processed porous SiC ceramics and is even lower than the thermal conductivity (0.060 Wm⁻¹ K⁻¹, 87.9% porous) of SiO₂ aerogel. The porous SiC-(16–73 wt%) SiO₂ composites processed from nano β-SiC and a 40 wt% carbon template exhibited a hierarchical (meso-/macro-porous) pore structure that transformed to a trimodal (micro-/meso-/macro-porous) porous structure when polysiloxane was added and sintering was performed at 600–1000 °C in air.     

Effects of Y2O3–RE2O3 (RE = Sm,Gd, Lu) Additives on Electrical and Thermal Properties of Silicon Carbide Ceramics

In this study, we investigated the electrical and thermal properties of SiC ceramics with 2 vol% equimolar Y₂O₃–RE₂O₃ (RE = Sm, Gd, Lu) additives. The three SiC ceramics with 2 vol% equimolar Y₂O₃–RE₂O₃ additives showed electrical conductivities on the order of ~10³ (Ω·m)^?1, which is one order of magnitude higher than that of the SiC ceramics sintered with 2 vol% Y₂O₃ only. The increase in electrical conductivity is attributed to the growth of heavily nitrogen‐doped SiC grains during sintering and the confinement of oxide additives in the junction area. The thermal conductivities of the SiC ceramics were in the 176–198 W·(m·K)^?1 range at room temperature. The new additive systems, equimolar Y₂O₃–RE₂O₃, are beneficial for achieving both high electrical conductivity and high thermal conductivity in SiC ceramics.