Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing

Large stable ferroelectricity in nanoscale undoped zirconia (ZrO₂) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12 μC cm⁻² were obtained in the as-deposited ZrO₂ thin films prepared by remote plasma atomic layer deposition at 300 °C substrate temperature on the Pt electrode. Ferroelectric crystallization of the films was achieved without post-annealing, which is highly beneficial to the application of the films in non-volatile memories and ultralow-power nanoelectronics. The existence of the ferroelectric orthorhombic phase with noncentrosymmetric space group Pbc2₁ in the as-deposited ZrO₂ thin films was confirmed by high-resolution transmission electron microscopy.     

Regulating crystal structure and ferroelectricity in Sr doped HfO2 thin films fabricated by metallo-organic decomposition

HfO₂ based binary ferroelectric oxides are promising candidate for nonvolatile memory devices due to their compatibility with the current Si-based technology. In this work, Sr doped HfO₂ (Sr:HfO₂) ferroelectric thin films with Sr concentration from 0% to 10?mol% were prepared on the platinum electrodes by metallo-organic decomposition (MOD). It was demonstrated that uniform Sr:HfO₂ thin films with extremely low roughness can be achieved and crystallized by MOD under a 700?°C annealing process. A wake-up stage was believed more essential for the ferroelectricity of the MOD derived Sr:HfO₂ thin film, since the remnant polarization of 13.3 µC/cm² and high dielectric constant of 30 were obtained after 10⁵ cycling tests. The transformation from monoclinic phase to cubic phase was observed with increasing the Sr concentration and the thickness of the films. X-ray photoelectron spectroscopy analysis confirmed the bonding type of O-Hf-O and O-Sr-O bonds in the film. The microscopic crystal structure of ferroelectric orthorhombic phase was observed by high resolution transmission electronic microscope. The intrinsic ferroelectricity of Sr:HfO₂ film was demonstrated by the hysteresis polarization-voltage loops and distinct current peaks in the current-voltage curve. Stable domain structure and its switching dynamics were monitored by piezoresponse force microscopy, indicating the native polarization of Sr:HfO₂. This work will provide a controllable routine to fabricate ferroelectric HfO₂ based thin films using MOD method.     

Interface-layer-assisted reliable ferroelectricity in BiFeO3 thin films by chemical solution deposition

BiFeO₃ thin films, specifically those fabricated by chemical solution deposition, suffer from severe leakage that hinder the acquirements of their intrinsic high polarizations and are thus normally not considered for use in practical electronics. The controlled fabrication of thin films with reduced leakage is of vital importance. In the present work, BiFeO₃ films (with thicknesses below ~300 nm), assisted by an interfacial amorphous layer, were fabricated by chemical solution deposition on Pt/Ti/SiO₂/Si substrates. This facile method facilitates the growth of the mentioned amorphous layer, and the ferroelectric properties of the obtained films were greatly enhanced. The conducting mechanisms of both types of thin films were systematically investigated to understand the impact of the designed interface. The results not only advance the potential use of BiFeO₃ thin films in electromechanical devices but also promote chemical solution deposition as a promising methodology for the fabrication of high-quality ferroelectric films with compressed leakage.     

Chemical and interfacial design in the visible-light-absorbing ferroelectric thin films

Ferroelectric thin films with switchable polarization and anomalous photoelectric effects have received extensive attention recently. However, the improvement of photoelectric performance is accompanied by the weakening of ferroelectricity. Here, both chemical and interlayer design are used to regulate the polarization and optical properties of BiFeO₃-based ferroelectric films. We achieved an improvement in both ferroelectricity and bandgap by chemical composition. The remanent polarization has been enhanced to 73.8 μC/cm² from 0.2 μC/cm², ascribed to the structural transition. The band gap of Eu-BiFeO₃ films has been reduced to 2.23 eV from 2.42 eV due to the unique energy level from Eu 4f, indicating the enhanced visible-light-absorbing capability. We have designed a "sandwich" interfacial structure of homogeneous Eu-BiFeO₃ films. A clever combination between optimal ferroelectricity and narrow band gap with near Eu contents of BFO films would generate an interfacial layer with a homogeneous gradient component, which should favor the switching of ferroelectric domains. The results show that the remanent polarization improved by 17 % to 86.2 μC/cm² while the band gap has also improved. Intriguingly, the short-circuit current density (J_sc) and open circuit (V_oc) of the photovoltaic signal of the optimal films are 89.0 nA and 0.412 V, respectively. This provides a simple and intelligent way to design the ferroelectric-photoelectric thin films and lays the foundation for optical information storage devices.     

Wetting and interfacial reactions in liquid Au-Ti alloys / ZrO2 system

This study investigates wetting of zirconia by Au-Ti alloys containing 0.6–4 wt% Ti in view of brazing zirconia to titanium with pure gold for biomedical applications. Experiments were carried out using sessile and dispensed drop methods under high vacuum at 1040–1250 °C. Bulk drops and Au-Ti / ZrO₂ interfaces were characterized by SEM and FEG-SEM with EDXS analysis. While Au does not wet zirconia, the contact angle θ being ∼ 120°, the addition of Ti in Au leads to a significant improvement of wetting due to the formation of a wettable oxide layer at Au-Ti / ZrO₂ interface. The nature of this oxide was determined by X-ray diffraction of the reaction layer after the detachment of the droplet from the substrate or after the dissolution of the droplet. The mechanism of formation and growth of the oxide layer and its growth kinetics were determined based on fine analysis of the Au-Ti / oxide layer / ZrO₂ interfacial system.     

Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors

Enhanced ferroelectric properties of nanoscale ZrO₂ thin films by an HfO₂ seed layer are demonstrated in metal-ferroelectric-semiconductor (Si) capacitors and transistors prepared with a low thermal budget of 400 °C. The seeding effect of the HfO₂ layer leads to the enhancement of crystallization into the orthorhombic phase and the increase of remnant polarization of the sub-10 nm ZrO₂/HfO₂ bilayer structure. The ferroelectric field-effect transistor with the ZrO₂/HfO₂ bilayer gate stack reveals a large memory window of ~1.2 V and a steep subthreshold swing below 60 mV/decade. As compared with the Hf_0.5Zr_0.5O₂ thin film, superior ferroelectric properties of the ZrO₂/HfO₂ bilayer structure show great potential for ferroelectric memory devices fabricated on Si substrates.     

High temperature failure modes of In2O3 thin films and improved thermal stability using Al2O3/ZrO2 protective layers

The limiting temperature of an In₂O₃ thin film sensor is much lower than its melting point. Herein, the failure modes of In₂O₃ thin films at high temperatures, including sublimation and changes in composition, have been studied. The edge and surface layer sublimation rates increased dramatically at 1350 °C, indicating that it is the limiting temperature of no-protection In₂O₃ films. In addition, oxygen atoms will escape from In₂O₃ thin films at high temperatures, forming oxygen vacancies. As the main current carrier type in In₂O₃, the increasing number of oxygen vacancies affects the resistance of In₂O₃ thin film sensors. To solve these problems and promote the high temperature performance of In₂O₃ thin films, protection methods based on Al₂O₃ and ZrO₂ layers have been investigated. The ZrO₂ protective layer alleviated the serious considerable sublimation of In₂O₃ thin films at high temperatures, and the Al₂O₃ protective layer was beneficial for reduction the escape of oxygen atoms. Finally, different protection layers were evaluated by in-situ resistivity measurements of In₂O₃ thin films at high temperatures. The resistance of the In₂O₃ thin film resistor with a protective multilayer consisting of Al₂O₃ and ZrO₂ remained stable at 1360 °C, verifying the protection method effectively increased the thermal stability of In₂O₃ thin films.     

Reactive wetting and interfacial characterization of ZrO2 by SnAgCu-Ti alloy

The reactive wetting behavior of zirconia with SnAgCu-x%Ti (SAC-x%Ti, wt%, x?=?1, 4) alloy was investigated via the sessile drop method in isothermal experiments. As temperatures elevated, the final contact angle decreased and the minimum contact angle of 21° and 7° were obtained at 1000?°C for SAC-1%Ti and SAC-4%Ti droplets, respectively. Kinetic calculations indicated that the spreading of SAC-Ti droplets on zirconia was controlled by interfacial reaction and the wetting activation energy was 108.8?kJ/mol. The reaction products distribution and morphology in droplets were influenced vastly by the addition of Ti. Along with the increase of Ti content from 1% to 4%, a great deal of Ti-Sn intermetallic compounds (IMCs) were generated in droplets, thereby the outline of droplets were transformed from hemispherical into similar trapezoidal due to the limited spreading and fluidity of droplets. Owing to the interfacial reaction between active elements Ti and zirconia and the subsequent formation of the Ti-O layer, the wettability of SAC-Ti/zirconia was greatly promoted. According to transmission electron microscopy (TEM) analysis, the thin Ti-O reaction layer consisted of the Ti₂O, Ti₄O₇, Ti₇O₁₃ and TiO₂ phase.     

Spin coating of thin and ultrathin polymer films

The spin coating of thin (> 200 nm thick) and ultrathin (< 200 nm thick) polymer films is examined in several solvents of varying volatility over a broad range of polymer solution concentrations and spin speeds. Experimentally measured film thicknesses are compared with a simple model proposed by Bornside, Macosko, and Scriven, which predicts film thickness based on the initial properties of the polymer solution, solvent, and spin speed. This model is found to predict film thickness values within 10% over the entire range of conditions explored, which gave film thicknesses from 10 nm to 33 μ:m. The model underpredicts film thickness for cases in which a very volatile solvent is used or the initial concentration of polymer is high, while overpredicting film thickness for cases in which a low volatility solvent is used or the initial polymer concentration is very low. These deviations are a consequence of how the model decouples fluid flow and solvent evaporation.     

Microstructural evolution and growth kinetics of interfacial reaction layers in SUS430/Ti3SiC2 diffusion bonded joints using a Ni interlayer

Ti₃SiC₂ ceramic and SUS430 stainless steel (SS) were successfully joined by a solid diffusion bonding technique using Ni interlayers. Diffusion bonding was performed in the temperature range of 850 °C–1100 °C under vacuum. The interfacial reaction phase, morphology evolution, growth kinetics and tensile strength were systematically investigated. In all cases, the inter-diffusion and reaction between Ti₃SiC₂ and SS can be effectively prevented by Ni foil, and the good transition in the joint benefit to the sound joining. The interface in the joints adjacent to SS matrix was composed of γ solid solution and a small amount of σ intermetallic compound. The compounds in the Ni/Ti₃SiC₂ interface was Ni/Ni(Si)/Ni₃₁Si₁₂ + Ni₁₆Ti₆Si₇ + Ti₃SiC₂ + TiC_x/Ti₂Ni + Ti₃SiC₂ + TiC_x/Ti₃SiC₂, which formed by the inter-diffusion and chemical reactions between Si and Ni atoms. The diffusion mechanism and reaction mechanism were interrelated, and decided the width of each reaction zones. Furthermore, the diffusion activation energy was 113 kJ/mol. The tensile strength increases with increasing the bonding temperature. The minimum and maximum strength of 32.3 MPa and 88.8 MPa were obtained from SUS430/Ni/Ti₃SiC₂ joints, which bonding experiments were carried out at 850 °C and 1100 °C, respectively.     

Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

Study of thermal conductivity of glass with ZrO2-based thin films

Extraction-pyrolysis method is used for deposition of thin films of ZrO₂ and ZrMgO₃, ZrNiO₃, ZrBaO₃ onto glass substrates. The effect of thin films on coefficient of thermal conductivity of glass depending on the temperature is studied.     

Influence of molecular rigidity on interfacial ordering in diphenyl-based polysiloxane films

Synchrotron X-ray reflectivity (XRR) shows significant differences between the ordering in thin films of diphenyl-based siloxane oligomers with single versus double backbones of -Si-O- repeating groups. We show that the more restricted conformational arrangement of twofold-skeleton molecules results in a higher degree of molecular ordering indicated by 2-2.5 times higher value of intensity of the corresponding Bragg peak in thin solid films of poly(phenylsilsesquioxane) than in films of poly(diphenylsiloxane), regardless of the solvent used for film casting. In both cases, the ordered molecules are located within 40-50 Å of the substrate surface. The results indicate unambiguously that the chain stiffness of siloxanes governs the degree of ordering in the restricted geometry of the interfacial region.     

Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget

In past few years, there was a great amount of research on ferroelectric Al-doped HfO₂ (HAO) thin films which suffer from the need of high annealing temperatures to achieve significant ferroelectricity. In this work, we realize pronounced remnant polarization 2P_r~29μC/cm² of HAO using rapid electron beam annealing (EBA) with a large area. The simulation of electron beam trajectories reveals that the effect of EBA concentrates on the region ~20 nm below the sample surface, which highly benefits the process integration where a low thermal budget is required. The energy-dispersive X-ray and high-angle annular dark-field analyses reveal the interdiffusion between Al and Hf in the HAO layer treated by EBA. The pronounced ferroelectricity of HAO can be accounted for by the lattice strain, which facilities the formation of the orthorhombic phase, due to the substitution of Al for Hf as supported by the fast Fourier transformation diffraction pattern.     

Ferroelectric properties of pure ZrO2 thin films by chemical solution deposition

Ferroelectricity in pure zirconia (ZrO₂) thin films, manufactured on Si (100) substrates via the chemical solution deposition method using all-inorganic aqueous salt precursor, has been demonstrated for the first time. The influence of thickness on the crystalline structure and ferroelectric properties of the thin films were measured and showed that they were strongly affected by the film thickness. The structural data indicated that as the film thickness increased from 30 nm to 50 nm, the m-phase fraction increased, and a phase transition from orthorhombic to cubic and then tetragonal occurred near the main diffraction peak of 30.7°. The lowest m-phase fraction of 15.4% was obtained in the pure ZrO₂ film with a thickness of 30 nm, and after 10³ field cycling, it exhibited the highest relative permittivity of 39.6 as well as the highest residual polarization of 8.5 μC/cm².     

CO2/CH4 separation using inside coated thin film composite hollow fiber membranes prepared by interfacial polymerization

Carbon dioxide(CO_2) is greenhouse gas which originates primarily as a main combustion product of biogas and landfill gas. To separate this gas, an inside coated thin film composite(TFC) hollow fiber membrane was developed by interfacial polymerization between 1,3–cyclohexanebis–methylamine(CHMA) and trimesoyl chloride(TMC). ATR-FTIR, SEM and AFM were used to characterize the active thin layer formed inside the PSf hollow fiber. The separation behavior of the CHMA-TMC/PSf membrane was scrutinized by studying various effects like feed gas pressure and temperature. Furthermore, the influence of CHMA concentration and TMC concentration on membrane morphology and performance were investigated. As a result, it was found that mutually the CHMA concentration and TMC concentration play key roles in determining membrane morphology and performance. Moreover, the CHMA-TMC/PSf composite membrane showed good CO_2/CH_4 separation performance. For CO_2/CH_4 mixture gas(30/70 by volume) test, the membrane(PD1 prepared by CHMA 1.0% and TMC 0.5%) showed a CO_2 permeance of 25 GPU and the best CO_2/CH_4 selectivity of 28 at stage cut of 0.1. The high CO_2/CH_4 separation performance of CHMA-TMC/PSf thin film composite membrane was mostly accredited to the thin film thickness and the properties of binary amino groups.     

Enhanced ferroelectricity of CaBi2Nb2O9-based high-temperature piezoceramics by pseudo-tetragonal distortion

(LiBi)-doped CaBi₂Nb₂O₉ (CBN) ceramics were synthesized by the conventional solid-state sintering method. The effects of (LiBi) additives on the crystalline structure were explored by Rietveld refinements. The results showed that pseudo-tetragonal distortion was induced by (LiBi) additives when x ≥ 0.35. This structural distortion increased the spontaneous polarization along a-axis and decreased the quits spontaneous polarization along b-axis, which was beneficial to the polarization switching, thus promoting the ferroelectricity and decreasing the coercive field (E_C) of CBN based ceramics. The Ca_0.60(Li_0.5Bi_0.5)_0.40Bi₂Nb₂O₉ (CBNLB-40) ceramics possess the optimum ferroelectric property with 2P_r of 10 μC/cm² and a coercive field (E_C) lower than 100 kV/cm. Moreover, it exhibits a good ferroelectric fatigue-free property within 10⁷ switched cycles. This work may provide a new method to promote the performance of Aurivillius ferroelectric-based non-volatile memory devices.     

Flame retardant synergy between interfacial and bulk carbonation in glass fiber reinforced polypropylene

Glass fiber reinforced polypropylene (GF-PP) composites have high flammability on account of wick effect which leads to accelerated flow of the polymer melt along the glass fibers (GF) surface to the flame zone. In this study, dipentaerythritol (DPER), a charring agent, was adsorbed on the GF surface through the hydrogen bond between silane coupling agent and DPER. DPER has a synergistic effect with the intumescent flame retardants (IFR) added in the composites, which can induce interfacial carbonization on the surface of GF, thus transforming the intrinsic smooth GF surface into roughness one. In this way, the negative effect of the wick effect in flame retardancy is weakened. Moreover, the char residues remained on the surface of GF can bring an improved adhesion between GF and char residues formed in the resin so that a more stable barrier char layer is formed. The PP composites with 20 wt% modified glass fiber (M-GF) and 30 wt% IFR can achieve the UL-94V-0, and its limiting oxygen index (LOI) value increased from 16.5% to 29.5%. Simultaneously, the heat release rate (HRR), total heat release (THR) and total smoke release (TSR) decreased significantly, and the peak of heat release rate (PHRR) reduced 60.6% compared with GF-PP.     

Asymmetric alumina-based ultrathin composite ceramic membranes with interfacial modification of black talc nanosheets

In this work, ultrathin planar alumina-based ceramic membranes with asymmetric structure and thickness less than 0.85 mm were successfully prepared by one-step molding phase transformation/sintering method using low-cost black talc (BT) nanosheets for the first time. The microstructure, pore structure, mechanical strength and permeability of novel ceramic membranes were systematically investigated with different BT amount and sintering temperatures. The doping of BT nanosheets effectively modulated the interfacial bonding area and strength between the grains, achieving significant increase in flexural strength through the evolution of the dense layer structure. The asymmetric structural features formed by the phase transformation/sintering process in combination with polymer substrate significantly reduced the thickness of effective separation layer, thus weakening the loss of flux caused by the densification of the film layer due to the interfacial modification process. Moreover, the organic carbon layers between BT layers were oxidized during the sintering process, forming fine pores and increasing the porosity, which showed to be unique characteristic different from other clay mineral materials. The prepared composite membrane had the pure water flux up to 16335 L m⁻² h⁻¹/bar at 1350 °C sintering, which achieved stable permeation of ∼5200 L m⁻² h⁻¹/bar and high retention over 90% for O/W emulsions.     

The effects of latex coalescence and interfacial crosslinking on the mechanical properties of latex films

The effects of latex coalescence and interfacial crosslinking on the mechanical properties of latex films were extensively investigated by means of several series of model latexes with varying backbone polymer crosslinking density and interfacial crosslinking functional groups. It was found that the tensile strength of crosslinked model latex films increased with increasing gel content (i.e. crosslinking density) of latex backbone polymers up to about 75% and then decreased with further increase in gel, while their elongation at break steadily decreased with increasing gel content. These findings showed that latex particle coalescence was retarded above a gel content of about 75% so that the limited coalescence of latex particles containing gel contents higher than 75% prevented the tensile strength of crosslinked latex films from increasing by further crosslinking the latex backbone polymers. This was contrary to the theory of rubber elasticity that the tensile strength increases with increasing molecular weight and crosslinking density. This limitation was found to be overcome by the interfacial crosslinking among latex particles during film formation and curing. This paper will discuss the effects of both latex backbone polymer and interfacial crosslinking on latex film properties. It will also discuss the development of self-curable latex blends and structured latexes containing co-reactive groups: oxazoline and carboxylic groups.