Organic vapor sensors based on SAW resonator and organic films

The majority of investigations of SAW devices used as chemical sensors are based on delay line oscillators. However, SAW resonator oscillator offers some advantages over the SAW delay line oscillator for its higher stability. In the incipient stage of fabricating gas sensors based upon SAW resonator, taking detection of organic vapor as an example, the analysis method that combines the SAW theory with organic film technology has been adopted to give an intensive insight into the responses of two-port SAW resonator coated with LB-film and cast-film after exposure to organic vapors.     

Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300 degrees C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphirebased SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.     

Chemical sensors based on nano-polymer films

A procedure is described for formation of a nano-structured organic-organic interface with increased conductivity at the interface of two polymer films. It is established that conductivity is determined by the type and degree of external action. It is shown that on the basis of this interface it is possible to create chemical sensors, and in fact sensors for the relative humidity of air, ethanol vapor pressure, and pH readings. Translated from Izmeritel’naya Tekhnika, No. 4, pp. 62–64, April, 2009.     

Sezawa mode SAW pressure sensors based on ZnO/Si structure

Surface acoustic wave (SAW) devices have been shown to be suitable for many sensor applications. One of these applications is pressure sensor. In this study we investigate the performance of SAW pressure sensors formed with ZnO/Si(001) structure. The pressure sensitivities of Rayleigh mode as well as the Sezawa mode are studied as a function of normalized thickness (kh = 2pihZnO/lambda). The experimental results show an opposite strain effect in the ZnO layer and Si substrate. A theoretical approach based on the perturbation method has been developed for the evaluation of pressure sensitivity in the Sezawa mode. Experimental and theoretical results obtained for the ZnO/Si SAW sensor prepared with kh = 1.18 are in good agreement. For kh < or = 1.2, the ZnO contribution to the sensor sensitivity can be neglected in the Sezawa mode in which ZnO acts mainly as an electromechanical conversion layer.     

A switched-capacitor interface for capacitive sensors based onrelaxation oscillators

A switched-capacitor (SC) interface for capacitive sensors based on a modified Martin's relaxation oscillator is proposed. The output signal is the duty-cycle of a pulse-width modulated square-wave voltage or a binary-coded digital signal which is directly related to the capacitance ratio of an unknown capacitance and reference capacitance. The circuit can be implemented in a monolithic IC form using CMOS technology. It requires a relatively small device count integrable onto a small chip area and its suited particularly for the on-chip interface circuitry for microprocessors     

An interrogation unit for passive wireless SAW sensors based on fourier transform

The application of surface acoustic wave (SAW) resonators as sensor elements for different physical parameters such as temperature, pressure, and force has been well-known for several years. The energy storage in the SAW and the direct conversion from physical parameter to a parameter of the wave, such as frequency or phase, enables the construction of a passive sensor that can be interrogated wireless. This paper presents a temperature-measurement system based on passive wireless SAW sensors. The principle of SAW sensors and SAW sensor interrogation is discussed briefly. A new measurement device developed for analyzing the sensor signals is introduced. Compared to former interrogation units that detect resonance frequency of the SAW resonator by comparing amplitudes of sensor response signals related to different stimulating frequencies, the new equipment is able to measure the resonance frequency directly by calculating a Fourier transformation of the resonator response signal. Measurement results of an experimental setup and field tests are presented and discussed.     

Analysis of viscosity sensitivity for liquid property detection applications based on SAW sensors

An investigation of viscosity sensitivity for liquid property detection applications based on the ZnO/SiO₂/Si layered structure Love mode surface acoustic wave (SAW) sensors is presented. One of our interests in this paper is to optimize the SAW viscosity sensor under the condition of temperature stability by considering the relations among electromechanical coupling coefficient, viscosity sensitivity and temperature coefficient of delay (TCD). Some important results have been obtained by solving the system of coupled electromechanical field equations and Navier–Stokes equation. It is found that the electromechanical coupling coefficient and viscosity sensitivity can be further improved by adjusting the thickness of SiO₂ thin film and a zero TCD device also can be obtained by introducing a SiO₂ thin film with proper thickness. We try to obtain a device which possesses the viscosity sensitivity as high as possible and has zero TCD. Another interest of this paper is to improve the traditional viscosity sensitivity expression by considering the coupling effect between the liquid viscosity and density. It is shown that the coupling effect cannot be neglected from the numerical results. This modification could make the obtained viscosity more accurate. This analysis is meaningful for the manufactures and applications of the ZnO/SiO₂/Si structure Love wave sensor for liquid property detection.     

The detection properties of ammonia SAW gas sensors based on L-glutamic acid hydrochloride

This study has investigated an improved surface acoustic wave (SAW) ammonia gas sensor based on L-glutamic acid hydrochloride. It presents an excellent reversibility, sensitivity, and repeatability to ammonia. The frequency shift versus ammonia concentration above 40 degrees C was a monotonic function, and the limit of detection of the sensor at 50 degrees C was 80 ppb.     

Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices

We present a study of the effect of particle bombardment on the preferred orientation and the residual stress of polycrystalline aluminum nitride (AlN) thin films for surface acoustic wave (SAW) applications. Films were deposited on silicon (100) substrates by radio frequency (RF) sputtering of an aluminum target in an argon and nitrogen gas mixture. The main deposition parameters were changed as follows: the total pressure from 4 mTorr to 11 mTorr, the N2 content in the gas mixture from 20% to 80%, and the substrate self-bias voltage from -10 V to -30 V. If a sufficiently high negative substrate self-bias voltage is induced, (00.2)-oriented films are obtained over the full ranges of pressure and N2 content. Such films have values of residual stress ranging from -3 GPa to +1 GPa, depending on the deposition conditions. Our results suggest that the energy of the Ar ions colliding with the substrate controls the preferred orientation of the films, whereas the directionality of the ions (for the same energy) is the main factor determining the residual stress. To demonstrate the suitability of our material for the intended application, SAW filters with good electroacoustic response have been fabricated using AlN thin films with optimized (00.2) orientation and controlled residual stress.     

Evaluation on mass sensitivity of SAW sensors for different piezoelectric materials using finite-element analysis

The mass sensitivity of the piezoelectric surface acoustic wave (SAW) sensors is an important factor in the selection of the best gravimetric sensors for different applications. To determine this value without facing the practical problems and the long theoretical calculation time, we have shown that the mass sensitivity of SAW sensors can be calculated by a simple three-dimensional (3-D) finite-element analysis (FEA) using a commercial finite-element platform. The FEA data are used to calculate the wave propagation speed, surface particle displacements, and wave energy distribution on different cuts of various piezoelectric materials. The results are used to provide a simple method for evaluation of their mass sensitivities. Meanwhile, to calculate more accurate results from FEA data, surface and bulk wave reflection problems are considered in the analyses. In this research, different cuts of lithium niobate, quartz, lithium tantalate, and langasite piezoelectric materials are applied to investigate their acoustic wave properties. Our analyses results for these materials have a good agreement with other researchers' results. Also, the mass sensitivity value for the novel cut of langasite was calculated through these analyses. It was found that its mass sensitivity is higher than that of the conventional Rayleigh mode quartz sensor.     

Micromachined piezoelectric force sensors based on PZT thin films

A micromachined lead zirconate titanate (PZT) force sensor for scanning force microscope (SFM) is conceptualized by its piezoelectricity. The fabrication procedure is interpreted, and mechanical characteristics of the micromachined PZT force sensors with various lengths are studied in this paper. A compact SFM is constructed by using the piezoelectric PZT sensor. A very clear image is taken by this SFM. The current study of the micromachined PZT force sensor can be considered as a breakthrough of design of SFM as well as a good example of integrated piezoelectric microdevices     

Phase correction of SAW ILRACs and RACs using Langmuir-Blodgett films

A novel method of adjusting surface-acoustic-wave (SAW) velocity in reflective array pulse compressors (RACs), including in-line devices (ILRACs) and hence correcting fabrication errors, is described. The velocity change is effected by depositing Langmuir-Blodgett films (LBFs) on the surface of the device. An accurate, stepped thickness profile can be created, enabling position-dependent velocity errors to be corrected. Experimental results for the velocity perturbation per LBF layer are first given together with data on temperature, humidity and age dependence. This is followed by the theory required to calculate the necessary thickness profile, including retrofitting to existing devices and allowing for the limitation to positive integer numbers of layers. Finally, experimental results are presented. In one device, simulated compressed pulse sidelobe levels are reduced by 19 dB.     

基于层层自组装纳米碳管薄膜的应变传感器

以层层自组装单壁碳纳米管网状薄膜为敏感材料,在柔性基底上制作了应变传感器,并对薄膜和器件性能进行了测试。测试结果表明:薄膜组装均匀,电导性良好,电阻随组装层数增加呈指数态下降;器件对应变呈现较好的敏感特性、线性响应和可恢复性,灵敏度为4.25;通过添加防护层屏蔽外界湿度及光照影响,传感器稳定性显著提高。该传感器可用于弯曲表面的应力应变检测。     

Recognition of organic solvents molecules by simultaneous detection using SAW oscillator sensors and optical fiber devices coated by Langmuir-Blodgett cadmium arachidate films

Surface acoustic waves (SAW) 433 and 315 MHz, two-port resonator-based oscillators coated with a Langmuir-Blodgett (LB) thin layer of chemosensitive cadmium arachidate (CdA) provide highly sensitive chemical acoustic sensors for detection and monitoring of organic vapors, at room temperature. LB CdA film-coated silica optical fibers (SOF) have been successfully fabricated and studied for organic solvents molecules sensing applications. The sensing performance of both types of acoustic and optical transducers has been compared for detecting six molecular species. Simultaneous measurements of frequency changes (delta f) and optoelectronic signal changes (deltaV) of the LB CdA film assembled onto SAW sensors and SOF devices have been realized for organic vapors recognition purposes. Six molecular species such as ethanol, methanol, isopropanol, ethylacetate, acetone, and toluene have been identified and recognized by a specific index (deltaf/deltaV), which can be considered a characteristic property of the chemosensitive material. The discrimination of the six molecular species examined also has been obtained by chemical patterns using a couple of specific index (deltaf433/deltaV; deltaf315/deltaV) measured by combining SAW 433 or 315 MHz oscillators and SOF sensing devices. Transient responses, calibration curves, intertransducer relationships, and chemical patterns are presented and discussed.     

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.     

Investigations on AlN/sapphire piezoelectric bilayer structure for high-temperature SAW applications

This paper explores the possibility of using AlN/sapphire piezoelectric bilayer structures for high-temperature SAW applications. To determine the temperature stability of AlN, homemade AlN/sapphire samples are annealed in air atmosphere for 2 to 20 h at temperatures from 700 to 1000°C. Ex situ X-ray diffraction measurements reveal that the microstructure of the thin film is not affected by temperatures below 1000°C. Ellipsometry and secondary ion mass spectroscopy investigations attest that AlN/sapphire is reliable up to 700°C. Beyond this temperature, both methods indicate ongoing surface oxidation of AlN. Additionally, Pt/Ta and Al interdigital transducers are patterned on the surface of the AlN film. The resulting SAW devices are characterized up to 500°C and 300°C, respectively, showing reliable frequency response and a large, quasi-constant temperature sensitivity, with a first-order temperature coefficient of frequency around -75 ppm/°C. Between room temperature and 300°C, both electromechanical coupling coefficient K(2) and propagation losses increase, so the evolution of delay lines' insertion losses with temperature strongly depends on the length of the propagation path.     

Miniaturized implantable pressure and oxygen sensors based on polydimethylsiloxane thin films

We demonstrate the application of polydimethylsiloxane (PDMS) thin films in highly sensitive pressure and oxygen sensors, designed for pressure and oxygen content measurements within the heart and blood vessels. PDMS thin film displacement as a result of pressure changes was transduced by a capacitive detection technique to produce quantitative measurement of absolute pressures. Oxygen measurements were obtained by transducing the current change between a Pt and an Ag/AgCl electrode on a glass substrate, with KCl soaked filter paper as the electrolytic media that is separated from the oxygen carrying fluid by a thin PDMS membrane. The best sensitivity for the pressure sensor was ~ 0.1 nA/KPa, with a noise limited resolution of ~ 0.09 KPa. For the oxygen sensor, the best sensitivity was ~ 2.75 µA for 1% change in oxygen content of the surrounding media, with a noise limited resolution of ~ 6.18 ppm oxygen. These experimental results agree with theoretical modeling predictions, and suggest that the semi-permeable and biocompatible PDMS can be successfully adopted as the contacting membrane in an integrated sensor design to quantify pressure and oxygen content in blood.     

High-strain sensors based on ZnO nanowire/polystyrene hybridized flexible films

A type of strain sensor with high tolerable strain based on a ZnO nanowires/polystyrene nanofibers hybrid structure on a polydimethylsiloxane film is reported. The novel strain sensor can measure and withstand high strain and demonstrates good performance on rapid human-motion measurements. In addition, the device could be driven by solar cells. The results indicate that the device has potential applications as an outdoor sensor system.     

Relative humidity sensors based on an environment-sensitive fluorophore in hydrogel films

A fluorescence-based sensing scheme exploiting an environment-sensitive fluorophore embedded in a hydrogel has been developed for measurement of relative humidity (RH). The fluorophore, dapoxyl sulfonic acid (DSA), is incorporated into two different hydrogel films, agarose and a copolymer of acrylamide and 2-(dimethylamino)ethyl methacrylate (DMAEM) cross-linked with N,N'-methylenebisacrylamide. The swelling and contracting of the hydrogels in response to relative humidity alters the polarity of the environment of DSA, stimulating a shift in the emission wavelength. From 0 to 100% RH, acrylamide-DMAEM sensors exhibited a 40 and 15 nm wavelength shift in still air and flowing gas, respectively. Agarose sensors showed a 40 nm wavelength shift from 0 to 100% RH in still air and a 30 nm shift from 0 to 70% RH in flowing gas. Response times for both sensors were 15 min in still air and less than 5 min in flowing gas. The sensing approach is straightforward and cost-effective, yields sensors with characteristics suitable for commercial measurement of RH (i.e., sensitivity, response times, reproducibility), and allows ease of adaptability to specific RH measurement requirements. The results support the potential extension of the method to a wide variety of analytes in the vapor phase and aqueous solution by incorporation of functionalized "smart" hydrogels.     

Dry etching of AlN films using the plasma generated by fluoride

The plasma produced by the mixture of fluoride and argon (SF₆/Ar) was applied for the dry etching of AlN films. Very high etching rate up to 140 nm/min have been observed. The effects of the bias voltage and the plasma component on the etching results were investigated. It shows that AlN can be effectively etched by the plasma with the moderate SF₆ concentration and the etching rate varies linearly with the bias voltage. The FTIR spectra confirm that AlF₃ is formed due to the chemical reaction of Al and F atoms. The mechanism of AlN etching in F-based plasma is probably a combination between physical sputtering and chemical etching and can be briefly outlined: (i) F⁻ ions reacts with Al atoms to form low volatile product AlF₃ and passivate the surface, and (ii) at the same time the Ar⁺ ions sputter the reaction product from the surface and keep it fluoride free to initiate further reaction. AlF₃ formed on the patterned sidewall play a passivation role during the etching process. The etching process is highly anisotropic with quite smooth surface and vertical sidewalls.