BN及Ag对FePt薄膜结构和磁性的影响

采用磁控溅射在玻璃基片上制备了BN/FePt/Ag薄膜,并在550℃真空退火30 min.用振动样品磁强计和X射线衍射仪研究了薄膜的磁特性和微观结构.结果表明:BN的厚度影响了BN/FePt/Ag薄膜的有序度和矫顽力,而且BN的添加有效地抑制了FePt粒子的长大,较薄的BN更有利于FePt由FCC向FCT相转变.此外,Ag的位置对提高[BN/FePt]s/Ag薄膜的垂直取向有一定的影响,总厚度为3.75 nm的Ag掺杂在BN与FePt之间要比在顶层更利于FePt垂直取向.     

Tb/FeCo多层膜的垂直交换偏置效应

采用磁控溅射方法,制备结构为Glass/Cu(60 nm)/[Tb(tTb=1.5,3.0 nm)/FeCo(1.5 nm)]5/Ta(10 nm)的两种不同Tb子层厚度的多层膜。采用X射线衍射分析仪、原子力和磁力显微镜、振动样品磁强计对样品的晶体结构、磁畴结构和室温磁性质进行表征,研究该多层膜系统的垂直磁各向异性和垂直交换偏置效应。X射线衍射分析表明,多层膜中Tb/FeCo界面主要呈非晶或纳米晶态。磁力显微镜结果显示,制备态薄膜均呈现迷宫状条纹磁畴结构。室温磁性测量表明,薄膜的易磁化方向都垂直膜面,垂直矫顽力分别为122和351 kA/m。在由这两种多层膜组合而成的Glass/Cu(60 nm)/[Tb(1.5 nm)/FeCo(1.5 nm)]2/[Tb(3.0 nm)/FeCo(1.5 nm)]5/Ta(10 nm)软磁/硬磁型多层膜中发现交换偏置场为20 kA/m的垂直交换偏置效应,这一效应的发现对Tb/FeCo多层膜在现代超快磁存储器中的应用具有重要意义。     

结构调制高硬度TiCu/TiN-Cu纳米多层复合膜制备及其机械性能

为改善TiN硬质薄膜的硬度和耐摩擦磨损性能,采用多弧离子镀技术,在硬质合金基底上制备了单层TiN-Cu薄膜和调制周期Λ=5.9～62.1 nm的5组TiCu/TiN-Cu纳米多层复合膜。使用扫描电子显微镜(SEM)、X射线能谱仪(EDS)、X射线衍射仪(XRD)、纳米压痕仪、划痕仪和摩擦磨损试验机等测试仪器,表征了薄膜的微观结构及机械性能,并研究了调制周期对纳米多层复合膜结构及机械性能的影响。实验结果表明:与单层TiN-Cu薄膜相比,TiCu/TiN-Cu纳米多层复合膜有效地抑制了晶粒生长,而且分层明显,薄膜均匀致密,薄膜中TiN晶粒以面心立方结构沿(111)方向生长。随着调制周期的减小,薄膜的结晶性有所下降,薄膜的硬度呈现先增大后减小的趋势。在调制周期为13.7 nm时,薄膜综合性能达到最佳,薄膜的硬度达到了42.6 GPa,H~3/E~2值也达到了0.689,摩擦系数为0.17,附着力为49.2 N,接近53.1 N的最高值,表明薄膜具有理想的硬度和耐摩擦磨损能力。在使用多弧离子镀工艺制备TiCu/TiN-Cu纳米多层复合多层膜的过程中,通过调整调制周期,有效地改善了膜层的机械性能,拓展了膜层的应用范围。     

脉冲激光沉积制备TiN/AlN多层薄膜的研究

采用脉冲激光沉积(PLA)法,在单晶Si试样表面沉积制备了一系列TiN/AlN硬质多层膜,并采用基于免疫算法的免疫径向基函数(IRBF)神经网络对AlN厚度建立预测模型,设计出具有可控调制周期和调制比的TiN/AlN多层膜。X射线衍射(XRD)结果表明,小调制层周期下,过高或过低的工艺条件下薄膜通常为非晶态,适当的工艺条件下TiN、AlN形成具有强烈织构的超晶格柱状晶多层膜;与此相应,纳米多层膜产生了硬度和弹性模量异常增高;随着调制比增加,使纳米多层膜形成非晶AlN层和纳米晶TiN层的多层结构,多层膜的硬度和弹性模量逐渐下降。XPS结果表明,薄膜界面由Ti+4、Ti+3离子组成,N的负二价、三价亚谱结构预示着非当量TiN、AlN的形成。AFM研究显示,薄膜的调制周期均在10~200 nm范围内,且薄膜表面较均匀;当多层薄膜调制周期在50 nm以下时,薄膜的纳米硬度值明显高于TiN和AlN的混合硬度值,达30 Gpa。     

CoPt合金纳米有序阵列的制备及磁学特性

采用电化学沉积法,在氧化铝模板中制备了φ50 nm的CoPt合金纳米线的高度有序阵列.纳米线结构和磁学特性分别用透射电子显微镜、扫描电子显微镜、X射线衍射仪和振动样品磁力计测试.结果表明,CoPt合金纳米线以fcc结构存在.当外加磁场与纳米线线轴平行时,测得的矫顽力为192 Ka/m,剩磁比为0.75;当外加磁场与纳米线线轴垂直时,所测得的矫顽力仅为48 Ka/m,剩磁比为0.25.表明纳米线阵列具有明显的各向异性,纳米线的易轴方向为其线轴方向.     

电化学沉积并氧化法制备CoFe2O4纳米线阵列

用阳极氧化铝(AAO)模板,通过电化学沉积并氧化制备得到纳米线阵列.X射线衍射(XRD)结果显示纳米线由立方尖晶石CoFe2O4相构成,且无明显的择优取向.从透射电子显微镜(TEM)照片可看出,(AAO)模板内刚刚沉积的CoFe2纳米线结构疏松,而通过在空气气氛下的热处理,疏松的CoFe2纳米线转化为致密的CoFe2O4纳米线.当扩孔时间为40 min时,纳米线阵列的矫顽力最大,为1.9 kOe(外磁场平行于纳米线).进一步增加扩孔时间,矫顽力将下降.当外场垂直纳米线时,矫顽力随着扩孔时间的增加而单调减少.外场平行纳米线时,退磁曲线的方形度随着扩孔时间的增加而单调地从0.48减少到0.42;而外场平行纳米线时,方形度却从0.48增加到0.52.     

CrAlN/VN多层膜调制周期对膜层性能的影响

针对磁控溅射制备CrAlN和VN的单层膜以及不同调制周期的CrAlN/VN纳米结构多层膜,采用X射线衍射仪、能谱仪、激光扫描共聚焦显微镜,维氏硬度计和纳米压痕仪对膜层性能进行表征。实验结果表明:CrAlN、VN以及CrAlN/VN多层膜均为面心立方结构,多层膜中VN层沿着CrAlN层共格生长。CrAlN/VN多层膜的硬度依赖于调制周期,在调制周期为10nm时,硬度达到最大值。多层膜的H~3/E~(*2)和韧性在调制周期较小时,更容易受到膜层中子层性能的影响。     

调制周期对Ti-TiN多层薄膜光学和电学性能的影响研究

采用反应直流磁控溅射法,在Si(111)基底上制备一系列不同结构的Ti/TiN多层薄膜.研究了溅射沉积过程中调制结构对周期薄膜光电性能的影响.研究结果表明:电阻率随着周期层数的增大而减小;周期层数增加时薄膜近红外反射率增大;当调制周期为25 nm时,薄膜方块电阻最小,同时薄膜红外反射率最大;修正了红外反射率RIR近似计算公式的系数.     

脉冲激光沉积TiN/AlN多层膜的微结构与力学性能

采用脉冲激光沉积(LPA)法,在单晶Si表面制备了调制周期为50nm的不同调制比的TiN/AlN多层膜,并研究了调制比对多层膜微结构和力学性能的影响。扫描电镜(SEM)和原子力显微镜(AFM)显示,薄膜的调制比在1～4之间。并且小调制比下薄膜表面的岛密度小,岛面积过大,分布不均匀,相邻岛之间的起伏较大。X射线衍射(XRD)结果表明,小调制比下,AlN相为明显的(002)择优取向,TiN相主要以(200)、(220)形式存在;调制比增大后,AlN相的择优取向减弱,同时伴随着薄膜晶粒的细化及硬度增强,这一研究结果说明,调制比对多层膜的性质有一定的影响,大调制比会导致Al元素在界面处聚集,并与TiN进行合金化后的形成TiAlN结构,进而对薄膜的硬度产生影响。     

含三联吡啶类配合物的结构及抑菌实验研究

介绍了4种新的金属有机配合物,即[ZnL1(cis-2-Butenedioicacid)₂ ]_n (配合物1)、[Zn₂(L₁)₂ (pnitrobenzoicacid) ₂ ]_n (配合物2)、[MnL₁(p-nitrobenzoicacid)2 ]_n (配合物3)、[Mn₂(L₁)₂(p-nitrobenzoicacid) ₂Cl₂]_n (配合物4)。利用三角形刚性配体(L1=4-溴-2,2'∶6',2″-三联吡啶)中氮供给体与半刚性配体(顺丁烯二酸、对硝基苯甲酸)中氧供给体进行合成。X-单晶衍射测试结果表明,配合物1是一维链状结构,配合物2-4均为0维结构。对配合物进行了红外光谱(FT-IR)和热重分析(TGA),结果表明,该系列的配合物具有良好的热稳定性,同时对这些晶体进行了抑菌实验研究。     

Effect of Change in Thickness of Ag Toplayer on the Structure and Magnetic Properties of FePd Films Grown on Glass Substrate

A series of FePd based alloy films were deposited on glass substrates by DC magnetron sputtering. The Ag toplayer effect was studied using FePd(67.5 nm)/Ag(3.875, 7.75, 15.50, 31 and 38.75 nm) films annealed at 600 ℃ for different time in order to find the role of the Ag toplayer in disorder-order of FePd film. The results show that the Ag toplayer can accelerate the phase transition from FCC to FCT in films. The magnetic easy axis of the crystallites in this film is in-plane of substrate. The Ag toplayer can greatly enhance the coercive of FePd films. When the thickness of Ag is equal to 31 nm, the film has a very large in-plane coercivity of 2.8 kOe and a very low out-of-plane coercivity of 1.04 kOe.     

磁控溅射Co1-x-Ptx薄膜晶体的结构与磁性能

通过磁控溅射制备了一系列不同成分的Co-Pt二元合金薄膜,并利用振动样品磁强计（VSM）和X-射线衍射技术（XRD）研究了Pt含量对薄膜磁性能和晶体结构的影响.结果表明：Pt的摩尔分数在0-28.5%范围内,薄膜均为密排六方结构（HCP）;Co-Pt薄膜的晶格常数（c,a）随Pt含量的增加呈线性增大趋势,但其c/a的值却先减小后增大;矫顽力则先增大后减小,在Pt的摩尔分数为20%时达到最大值（156.89 kA/m）;饱和磁化强度随Pt含量的增加而单调减小.     

Structures and properties of [CoPt/Ag]_n multilayer films

In recent years there has been considerable interest in atomically ordered L10-CoPtfilms as potential materials for ultrahigh density magnetic recording (UDMR) media[1].The L10 phase CoPt alloy has high anisotropy constant of 107—108 erg/cm3, which is ofcrucial importance for UDMR media with a small grain size below 10 nm, because highmagnetocrystalline anisotropy is needed to create a barrier to thermally activatedswitching of the magnetization[2, . The as-deposited CoPt film with equi…     

Fe_xPt_(100-x)薄膜的磁性能研究

用直流磁控溅射方法和原位退火工艺在玻璃基片上制备了FexPt100-x纳米膜.研究发现Fe含量对FePt纳米膜的磁特性有很大的影响.矫顽力和△H随Fe含量的增加而增大.当x=48时,矫顽力Hc达到了1040 kA/m,样品出现很好的有序化L10织构;△H取得最大值,颗粒间相互作用最小.FexPt1-x薄膜的矩形比S随着x的增加而增大,x>46时S值接近1,在一定程度上表明了此时读出信号强度较大;开关场分布SFD的变化情况刚好与此相反,Fe48Pt52获得的SFD值近似等于0.8,说明转变位置波动弱,来自转变的信号噪音低.     

Microstructures and magnetic properties of [SiO2/FePt]5/Ag thin films

[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.     

Structure and internal stress of Au films deposited on SiO2／Si（100） andmica by dc sputtering

Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of [111] in the growth direction. However the films grown on mica have mixture crystalline orientations of [111], [200], [220] and [311] in the growth direction and the orientations of [200] and [311] are slightly more than those of [111] and [220]. An internal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the [111]-and [311]-orientation grains are compressive while those in the [200]- and [220]-orientation grains are tensile. Au films grown SiOJSi(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica.     

Preparation and magnetic properties of Co-P thin films

Magnetic Co-P thin films were prepared by electroless deposition. The experiment results show that the film thickness has a significant influence on the coercivity. While the film thickness varied from 300 nm to 5 μm,the coercivity dropped sharply from 45.36 to 22.28 kA/m. As the film thickness increased further,the coercivity varied slowly. When the thickness of the film was 300 nm,the deposited film could realize the coercivity as high as 45.36 kA/m,and the remanent magnetization as high as 800 kA/m .The ...     

Structure and internal stress of Au films deposited on Si02/Si(100) and mica by dc sputtering

Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of [111] in the growth direction. However the films grown on mica have mixture crystalline orientations of [111], [200], [220] and [311] in the growth direction and the orientations of [200]and [311] are slightly more than those of [111] and [2201. An intemal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the [111]- and [311]-orientation grains are compressive while those in the [200]- and [220]-orientation grains are tensile. Au films grown SiO2/Si(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica.     

一种层状铈配位聚合物的合成、结构及光学性质

通过水热合成的方法,采用多官能团配体间苯二甲酸-5-磺酸钠(NaH2L)和Ce(NO3)3·6H2O反应得到层状的配位聚合物[Ce(L)(H2O)4]n(1).采用单晶衍射、元素分析和热重分析测试其分子结构和组成.Ce3+是九配位,呈三帽三角棱柱构型.L3-配体利用羧基和磺酸基桥连中心金属Ce3+,构成了二维层状结构,...