Growth of Single-Crystal and Polycrystalline Thin Films of MgAl2O4 and MgFe2O4

Single-crystal and polycrystalline films of Mg-Al₂O₄ and MgFe₂O₄ were formed by two methods on cleavage surfaces of MgO single crystals. In one procedure, aluminum was deposited on MgO by vacuum evaporation. Subsequent heating in air at about 510°C formed a polycrystalline γ-Al₂O₈ film. Above 540°C, the γ-Al₂O, and MgO reacted to form a single-crystal MgAl₂O₄ film with {001} MgAl₂O₄‖{001} MgO. Above 590°C, an additional layer of MgAl₂O₄, which is polycrystalline, formed between the γ-Al₂O₃ and the single-crystal spinel. Polycrystalline Mg-Al₂O₄ formed only when diffusion of Mg²⁺ ions proceeded into the polycrystalline γ-Al₂O₃ region. Corresponding results were obtained for Mg-Fe₂O₄. MgAl₂O₄ films were also formed on cleaved MgO single-crystal substrates by direct evaporation, using an Al₂O₃ crucible as a source. Very slow deposition rates were used with source temperatures of ∼1350°C and substrate temperatures of ∼800°C. Departures from single-crystal character in the films may arise through temperature gradients in the substrate.     

Quaternary System Al2O3–CaO–MgO–SiO2: II Study of the Crystallization Volume of MgAl2O4

Solid-state compatibility and melting relations of MgAl₂O₄ in the quaternary system Al₂O₃–CaO–MgO–SiO₂ were studied by firing and quenching selected samples located in the 65 wt% MgAl₂O₄, plane followed by microstructural and energy dispersive X-ray analysis. A projection of the liquidus surface of the primary crystallization volume of MgAl₂O₄ was constructed from CaO, SiO₂ and exceeding Al₂O₃, not involved in stoichiometric MgAl₂O₄ formation; those three amounts were recalculated to 100 wt%. The temperature and character of six invariant points, where four solids co-exist with a liquid phase, were defined. One maximum point was localized and the positions of the isotherms were tentatively established. The effect of CaO, SiO₂, and Al₂O₃ impurities on the high temperature behavior of spinel materials was also discussed.     

Lowering Crystallization Temperatures by Seeding in Structurally Diphasic Al2O3-MgO Xerogels

Thermal reactions in 93% Al₂O₃-7% MgO and 95.8% Al₂O₃-4.2% MgO gels seeded with α-Al₂O₃, MgAl₂O₄, α-Fe₂O₃, and SiO₂, sols were investigated by differential thermal analysis to determine the extent of nucleation catalysis of solid-state reactions. Seeding with α-Al₂O₃ lowered the α-Al₂O₃ crystallization temperature in these xerogels by 100° to 150°C. Spinel seeds have much less effect on the γ-α transition, and α-Fe₂O₃ and SiO₂ seeds do not affect it significantly. Isostructural seeding of gels may therefore permit lower ceramic processing temperatures.     

Oxidation Protection of MgO–C Refractories by Means of Al8B4C7

The effect of Al₈B₄C₇ used as an antioxidant in MgO–C refractories and the behavior of Al₈B₄C₇ in CO gas were investigated in the present study. Al₈B₄C₇ was found to react with CO gas, to form Al₂O₃( s ), B₂O₃( l ), and C( s ), at temperatures >1100°C. The Al₂O₃ reacts with MgO to form MgAl₂O₄ near the surface of the material. At the same time, B₂O₃( l ) evaporates and reacts with MgO, to form a liquid phase, at >1333°C, the eutectic point between 3MgO·B₂O₃ and MgO. The coexistence of the liquid and MgAl₂O₄ makes the protective layer more dense, thus inhibiting oxidation of the refractory. At >1333°C, the process apparently is controlled by oxygen diffusion, whereas it is controlled by chemical reaction when the temperature is <1333°C.     

Preparation of NiAl2O4/SiO2 and Co2+-Doped NiAl2O4/SiO2 Nanocomposites by the Sol–Gel Route

NiAl₂O₄/SiO₂ and Co²⁺-doped NiAl₂O₄/SiO₂ nanocomposite materials of compositions 5% NiO – 6% Al₂O₃– 89% SiO₂ and 0.2% CoO – 4.8% NiO – 6% Al₂O₃– 89% SiO₂, respectively, were prepared by a sol–gel process. NiAl₂O₄ and cobalt-doped NiAl₂O₄ nanocrystals were grown in a SiO₂ amorphous matrix at around 1073 K by heating the dried gels from 333 to 1173 K at the rate of 1 K/min. The formations of NiAl₂O₄ and cobalt-doped NiAl₂O₄ nanocrystals in SiO₂ amorphous matrix were confirmed through X-ray powder diffraction, Fourier transform infrared spectroscopy, differential scanning calorimeter, transmission electron microscopy (TEM), and optical absorption spectroscopy techniques. The TEM images revealed the uniform distribution of NiAl₂O₄ and cobalt-doped NiAl₂O₄ nanocrystals in the amorphous SiO₂ matrix and the size was found to be ∼5–8 nm.     

Crystallization of MgO-CaO-SiO2-P2O5 Glass

The crystallization behavior of a glass with a composition of 40 wt% 3CaO · P₂O₅−60 wt% CaO · MgO · 2SiO₂ was investigated. The primary crystalline phase was apatite with a dendritic form and ellipsoidal shape. β-(3CaO · P₂O₅) and CaO · MgO · 2SiO₂ were crystallized as samples heated to 990°C, and a three-layer structure was obtained. The development and morphology of this construction were explained by both the surface crystallization of the apatite and CaO · MgO · 2SiO₂ and the bulk crystallization of apatite and the CaO · MgO · 2SiO₂-β-(3CaO · P₂O₅) composite.     

Electrochemical Determination of the Gibbs Energy of Formation of MgAl2O4

The standard Gibbs energy of formation of the spinel MgAl₂O₄ from component oxides, MgO and α-Al₂O₃, has been determined in the temperature range 900 to 1250 K using a solid-state cell incorporating single-crystal CaF₂ as the solid electrolyte. The cell can be represented as—Pt,O₂,MgO+MgF₂|CaF₂|MgF₂+MgAl₂O₄+α-Al₂O₃,O₂,Pt—The standard Gibbs energy of formation from binary oxides, computed from the reversible emf, can be represented by the expression—capdelta G °_f,ox=−23600 − 5.91 T (±150) J/mol—The 'second-law' enthalpy of formation of MgAl₂O₄ obtained in this study is in good agreement with high-temperature solution calorimetric studies reported in the literature.     

Microstructure and Electrical Properties of MgAl2O4 Thin Films for Humidity Sensing

Active elements for humidity sensors based upon MgAl₂O₄ thin films or sintered pellets were investigated. Thin films were deposited on Si/SiO₂ substrates by radiofrequency (rf) sputtering. Sintered MgAl₂O₄ pellets were prepared by traditional ceramic processing. Scanning electron microscopy (SEM) analysis showed that the thin films were rather dense and homogeneous, made up of clustered particles of about 20–30 nm, while the pellets showed a wide pore-size distribution. X-ray photoelectron spectroscopy (XPS) demonstrated that the thin films have a stoichiometry close to that of MgAl₂O₄. Sintered MgAl₂O₄ is crystalline, while it is disordered in thin-film form. The presence of two different components of the Al 2 p peaks was correlated with the structural difference between pellets and thin films. The relationship between good film–substrate adhesive properties and the chemical composition at the interface was studied. The electrical properties of the sensing elements were studied at 40°C in environments at different relative humidity (RH) values between 2% and 95%, using ac impedance spectroscopy. MgAl₂O₄ thin films showed interesting characteristics in terms of their use in humidity-measurement devices. Resistance versus RH sensitivity values showed variations as high as 4 orders of magnitude in the RH range tested for thin films, and 5 orders of magnitude for pellets. The differences in the electrical behavior of MgAl₂O₄ pellets and thin films were correlated with their different microstructures.     

Molten Salt Synthesis of Magnesium Aluminate (MgAl2O4) Spinel Powder

MgAl₂O₄ (MA) spinel powder was synthesized by heating an equimolar composition of MgO and Al₂O₃ in LiCl, KCl, or NaCl. The synthesis temperature can be decreased from >1300°C (required by the conventional solid–solid reaction process) to ∼1100°C in LiCl, or to ∼1150°C in KCl or NaCl. The molten salt synthesized MA powder was pseudomorphic and retained, to a large extent, the size and morphology of the original Al₂O₃ raw material, indicating that a "template formation mechanism" plays an important role in the synthesis process.     

Diffusion of 51Cr in Surface Layers of Magnesia, Alumina, and Spinel

Diffusion of ⁵¹Cr isotope on MgO (100), Al₂O₃ (0001, and MgAl₂O₄ (111) surfaces was investigated by using the edgesource method. The surface diffusion parameter, αD,δ, where α is the segregation factor, D , the surface diffusion coefficient, and δ the thickness of the high-diffusivity layer, was determined for the temperature region 650° to 1250°C. For calculation of experimental results Whipple's solution was used. Arrhenius plots show a break at ∼1050°C for MgO and at ∼900°C for MgAl₂O₄. Above these temperatures vapor transport seems to be the overriding diffusion mechanism. Below these temperatures ionic transport predominates. Ionic transport is the predominant mechanism for surface diffusion of ⁵¹Cr on Al₂0₃ over the entire investigated temperature region. This can be explained by the weak bond between Cr-vapor species and Al₂0₃ surface. The apparent activation energies for ionic transport of 51Cr are 110 ± 12, 121 ± 12, and 119 ± 12 kJ/mol on MgO, Al₂O₃, and MgAl₂O₄ surfaces, respectively. They include enthalpy of motion and binding enthalpy and are 2.5 to 2.8 times smaller than the activation energies for volume diffusion. Investigations of surfaces by LEED, Auger, and SIMS indicated structural nonperiodicity and surface segregation of impurities.     

The System Si3N4-SiO2-Y2O3

Subsolidus phase relations were established in the system Si₃N₄-SiO₂-Y₂O₃. Four ternary compounds were confirmed, with compositions of Y₄Si₂O₇N₂, Y₂Si₃O₃N₄, YSiO₂N, and Y₁₀(SiO₄)₆N₂. The eutectic in the triangle Si₃N₄-Y₂Si₂O₇-Y₁₀(SiO₄)₆N₂ melts at 1500°C and that in the triangle Si₂N₂O-SiO₂-Y₂Si₂O₇ at 1550°C. The eutectic temperature of the Si₃N₄-Y₂Si₂O₇ join was ∼ 1520°C.     

Formation of Al2O3/Metal Composites by the Directed Oxidation of Molten Aluminum-Magnesium-Silicon Alloys: Part I, Microstructural Development

The growth of α-Al₂O₃/metal composites by the directed oxidation of molten Al-Mg-Si alloys proceeds through four distinct stages. The first stage encompasses the early heating of the alloy ingot, melting, and continued heating to between 1123 and 1173 K. In this latter temperature range, the molten alloy surface rapidly oxidizes to form a MgO-covered MgAl₂O₄ layer. During further heating and initial soak at the composite growth temperature (1373 to 1573 K), the duplex layer slowly thickens (second stage). The start of the third stage, growth initiation, is marked by the spread of a metal-rich zone over the duplex layer; this metal-rich zone is believed to be connected to the molten alloy through microcracks in the thickened MgO/MgAl₂O₄ layer. Small nodules of the oxide/metal composite nucleate from the metal-rich layer. During the final rapid growth stage, the small composite nodules grow and coalesce to form a macroscopically planar growth front, which persists until growth is complete. Throughout the growth process, the external surface of the α-Al₂O₃/metal composite is covered by a thin MgO layer. Immediately under this external layer and separating it from the α-Al₂O₃ is a thin layer of molten metal.     

Experimental Establishment of the CaAl2O4–MgO and CaAl4O7–MgO Isoplethal Sections within the Al2O3–MgO–CaO Ternary System

The isoplethal sections CaAl₂O₄–MgO and CaAl₄O₇–MgO of the Al₂O₃–MgO–CaO ternary system have been experimentally established at 1 bar total pressure and air of normal humidity. The sections obtained provide new data and information that are in disagreement with thermodynamic evaluations and optimizations of the Al₂O₃–MgO–CaO ternary system published to date. These differences arise mainly from the inclusion, or exclusion, of the binary compound Ca₁₂Al₁₄O₃₃, mayenite, as a stable phase in the reported studies of the system. The presence or absence of this compound within the system has an important impact on the solid state and melting relationships of the whole ternary system. The present study confirms the solid-state compatibility CaAl₂O₄–MgO and CaAl₂O₄–MgO–MgAl₂O₄ up to 1372°± 2°C, the peritectic melting point of the later mentioned subsystem.     

Interdiffusion in the System MgO-MgAl2O4

Interdiffusion coefficients in single-crystal MgO were determined using an MgO-MgAl₂O₄ diffusion couple. For a concentration of 1 mol% Al₂O₃ in MgO, the interdiffusion coefficient can be expressed as D =2.0±0.2 exp (−76,000±3,000/ RT ) for the MgO-MgAl₂O₄ couple. This relation compares well with previous measurements in the MgO-Al₂O₃ system. The interdiffusion coefficients, which increased with the mol fraction of cation vacancies, were in the range of 10⁻⁸ to 10⁻¹⁰ cm²s⁻¹ for the concentrations and temperatures studied. Diffusion was enhanced below 1640°C if powdered MgAl₂O₄ was used. Self-diffusion coefficients for Al³⁺ ions in MgO were calculated; Al³⁺ diffuses faster than Cr³⁺ in MgO.     

Ternary System Al2O3—MgO—CaO: Part II, Phase Relationships in the Subsystem Al2O3—MgAl2O4—CaAl4O7

Solid-state compatibility and melting relationships in the subsystem Al₂O₃—MgAl₂O₄—CaAl₄O₇ were studied by firing and quenching selected samples located in the isopletal section (CaO·MgO)—Al₂O₃. The samples then were examined using X-ray diffractomtery, optical microscopy, and scanning and transmission electron microscopies with wavelength- and energy-dispersive spectroscopies, respectively. The temperature, composition, and character of the ternary invariant points of the subsystem were established. The existence of two new ternary phases (Ca₂Mg₂Al₂₈O₄₆ and CaMg₂Al₁₆O₂₇) was confirmed, and the composition, temperature, and peritectic character of their melting points were determined. The isothermal sections at 1650°, 1750°, and 1840°C of this subsystem were plotted, and the solid-solution ranges of CaAl₄O₇, CaAl₁₂O₁₉, MgAl₂O₄, Ca₂Mg₂Al₂₈O₄₆, and CaMg₂Al₁₆O₂₇ were determined at various temperatures. The experimental data obtained in this investigation, those reported in Part I of this work, and those found in the literature were used to establish the projection of the liquidus surface of the ternary system Al₂O₃—MgO—CaO.     

Calculated Thermodynamic Data and Metastable Immiscibility in the System SiO2-Al2O3

Thermodynamic data on activities, activity coefficients, and free energies of mixing in SiO₂-Al₂O₃ solutions were calculated from the phase diagram. Positive deviations from ideal mixing in the thermodynamic data suggest a tendency for liquid immiscibility in both SiO₂- and Al₂O₃-rich compositions. The calculated data were used to estimate regions of liquid-liquid immiscibility. A calculated metastable liquid miscibility gap with a consolute temperature of ∼1540^°C at a critical composition of ∼36 mol% Al₂O₃ was considered to be thermodynamically most probable; the gap extended from ∼11 to °49 mol% Al₂O₃ at 1100^°C. SiO₂-rich glass compositions showed evidence of glass-in-glass phase separation when examined by direct transmission electron microscopy.     

Quaternary System Al2O3–CaO–MgO–SiO2: I, Study of the Crystallization Volume of Al2O3

Compatibility relations of Al₂O₃ in the quaternary system Al₂O₃–CaO–MgO–SiO₂ were studied by firing and quenching followed by microstructural and energy-dispersive X-ray examination. A projection of the liquidus surface of the primary phase volume of Al₂O₃ was constructed in terms of the CaO, SiO₂, and MgO contents of the mixtures recalculated to 100 wt%. Two invariant points, where four solids coexist with a liquid phase, were defined, and the positions of the isotherms were tentatively established. The effect of SiO₂, MgO, and CaO impurities on Al₂O₃ growth also was studied.     

Mullite Crystallization from SiO2-Al2O3 Melts

SiO₂-Al₂O₃ melts containing 42 and 60 wt% A1₂O₃ were homogenized at 2090°C (∼10°) and crystallized by various heat treatment schedules in sealed molybdenum crucibles. Mullite containing ∼78 wt% A1₂O₃ precipitated from the 60 wt% A1₂O₃ melts at ∼1325°± 20°C, which is the boundary of a previously calculated liquid miscibility gap. When the homogenized melts were heat-treated within this gap, the A1₂O₃ in the mullite decreased with a corresponding increase in the Al₂O₃ content of the glass. A similar decrease of Al₂O₃ in mullite was observed when crystallized melts were reheated at 1725°± 10°C; the lowest A1₂O₃ content (∼73.5 wt%) was in melts that were reheated for 110 h. All melts indicated that the composition of the precipitating mullite was sensitive to the heat treatment of the melts.     

High-Strain-Rate Superplasticity in Y2O3-Stabilized Tetragonal ZrO2 Dispersed with 30 vol% MgAl2O4 Spinel

High-strain-rate superplasticity is attained in a 3-mol%-Y₂O₃-stabilized tetragonal ZrO₂ polycrystal (3Y-TZP) dispersed with 30 vol% MgAl₂O₄ spinel: tensile elongation at 1823 K reached >300% at strain rates of 1.7 × 10⁻²– 3.3 × 10⁻¹ s⁻¹. The flow behavior and the microstructure of this material indicate that the MgAl₂O₄ dispersion should enhance accommodation processes necessary for grain boundary sliding. Such an effect is assumed to arise from an enhancement of the cation diffusion by the dissolution of Al and Mg ions into the ZrO₂ matrix and from stress relaxation due to the dispersed MgAl₂O₄ grains.     

High-Quartz Solid Solution Phases from Thermally Crystallized Glasses of Compositions Li2O2,MgO).Al2O3,nSiO2

Thermally crystallized glasses of compositions (Li₂,O₂, MgO).Al₂O₃.nSiO₂ were studied by X-ray powder diffraction methods. High-quartz solid solution phases developed at relatively low temperatures and, for n 3.5, transformed at higher temperatures to keatite solid solution phases. Associated phases, if present, were Mg spinel and/or cordierite, or a few other trace phases. The a crystallographic axis (a₀) of high-quartz solid solutions decreased with increase of MgO and/or SiO₂. The c crystallographic axis (c₀) decreased with increasing MgO; it also decreased with increasing SiO₂, but only when MgO content was low. X-ray diffraction photographs of single crystals of high-quartz solid solutions of compositions LiaO.Al₂O₃.nSiO₃ demonstrated that the maintenance of a basic high-quartz structure is the basis of the solid solution relation. Three modifications of the high-quartz structure were recognized in the Li₂O-Al₂O₃−SiO₃ system. These modifications were based on the occurrence and positions of superlattice reflections. The high-quartz solid solution from Li₂O Al₂O₃−2SiO₂, showing streaky reflections in its precession photographs, suggested a defective structure. The term "high-quartz solid solution," with or without additional prefixes specifying the compositional series and modification, was considered the preferred nomenclature for these solid solution phases.