An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition

In this work, the controlled fabrication of highly ordered ZnO nanowire (NW) arrays on silicon substrates is reported. Si NWs fabricated by a combination of phase shift lithography and etching are used as a template and are subsequently substituted by ZnO NWs with a dry-etching technique and atomic layer deposition. This fabrication technique allows the vertical ZnO NWs to be fabricated on 4 in Si wafers. Room temperature photoluminescence and micro-photoluminescence are used to observe the optical properties of the atomic layer deposition (ALD) based ZnO NWs. The sharp UV luminescence observed from the ALD ZnO NWs is unexpected for the polycrystalline nanostructure. Surprisingly, the defect related luminescence is much decreased compared to an ALD ZnO film deposited at the same time ona plane substrate. Electrical characterization was carried out by using nanomanipulators. With the p-type Si substrate and the n-type ZnO NWs the nanodevices represent p–n NW diodes.The nanowire diodes show a very high breakthrough potential which implies that the ALD ZnO NWs can be used for future electronic applications.     

Fabry–Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

Semiconductor nanowires (NWs) are attracting increasing interest as nanobuilding blocks for optoelectronics and photonics. A novel material system that is highly suitable for these applications are GaNP NWs. In this article, we show that individual GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates can act as Fabry‐Perot (FP) microcavities. This conclusion is based on results of microphotoluminescence (μ‐PL) measurements performed on individual NWs, which reveal periodic undulations of the PL intensity that follow an expected pattern of FP cavity modes. The cavity is concluded to be formed along the NW axis with the end facets acting as reflecting mirrors. The formation of the FP modes is shown to be facilitated by an increasing index contrast with the surrounding media. Spectral dependence of the group refractive index is also determined for the studied NWs. The observation of the FP microcavity modes in the GaP/GaNP core/shell NWs can be considered as a first step toward achieving lasing in this quasidirect bandgap semiconductor in the NW geometry.     

Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires

The light emission was investigated in light-emitting diodes (LEDs) constructed with n-ZnO and p-Si nanowires (NWs). ZnO NWs were synthesized by thermal chemical vapor deposition and Si NWs were formed by crystallographic wet etching of a Si wafer. The LEDs were fabricated using the NWs via dielectrophoresis (DEP) and direct transfer methods. The DEP method enabled to align the ZnO NW at the position that led to p-n heterojunction diodes by crossing with the transferred Si NW. The I-V curve of the p-n heterojunction diode showed the well-defined current-rectifying characteristic, with a turn-on voltage of 3 V. The electroluminescence spectrum in the dark showed the strong emission at approximately 385 nm and the broad emission centered at approximately 510 nm, at a forward bias of 30 V. Under the illumination of 325-nm-wavelength light, the luminescence intensity at 385 nm was dramatically enhanced, compared to that in the dark, probably due to the electric-field-induced enhancement of luminescence.     

Upconversion luminescence properties of YF3:Yb3+, Er3+ nanoclusters

The synthesis, characterization, and spectroscopy of upconverting Yb3+/Er3+ codoped YF3 rod-like nanoclusters are presented. The YF3 nanoclusters were synthesized by a simple hydrothermal method. The clusters structure was characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Under 978 nm laser excitation, stronger blue (4F(5/2) --> 4I(15/2) and 2p(3/2) --> 4I(11/2)) and green (4S(3/2), 2H(11/2) --> 4I(15/2)) upconversion luminescence were observed at 978 nm. The measured intensity of upconversion luminescence was different when pump power changed, which shows that the blue and green upconversion luminescence come from three-photon and two-photon energy transfer processes, respectively.     

Quantum confinement and electroluminescence in ultrathin silicon nanowires fabricated by a maskless etching technique

We present a novel approach for the direct synthesis of ultrathin Si nanowires (NWs) exhibiting room temperature light emission. The synthesis is based on a wet etching process assisted by a metal thin film. The thickness-dependent morphology of the metal layer produces uncovered nanometer-size regions which act as precursor sites for NW formation. The process is cheap, fast, maskless and compatible with Si technology. Very dense arrays of long (several micrometers) and small (diameter of 5-9?nm) NWs have been synthesized. An efficient room temperature luminescence, visible with the naked eye, is observed when NWs are optically excited, exhibiting a blue-shift with decreasing NW size in agreement with quantum confinement effects. A prototype device based on Si NWs has been fabricated showing a strong and stable electroluminescence at low voltages. The relevance and the perspectives of the reported results are discussed, opening the route toward novel applications of Si NWs.     

Hierarchical Metal/Semiconductor Nanostructure for Efficient Water Splitting

A hierarchically patterned metal/semiconductor (gold nanoparticles/ZnO nanowires) nanostructure with maximized photon trapping effects is fabricated via interference lithography (IL) for plasmon enhanced photo‐electrochemical water splitting in the visible region of light. Compared with unpatterned (plain) gold nanoparticles‐coated ZnO NWs (Au NPs/ZnO NWs), the hierarchically patterned Au NPs/ZnO NWs hybrid structures demonstrate higher and wider absorption bands of light leading to increased surface enhanced Raman scattering due to the light trapping effects achieved by the combination of two different nanostructure dimensions; furthermore, pronounced plasmonic enhancement of water splitting is verified in the hierarchically patterned Au NPs/ZnO NWs structures in the visible region. The excellent performance of the hierarchically patterned Au NPs/ZnO NWs indicates that the combination of pre‐determined two different dimensions has great potential for application in solar energy conversion, light emitting diodes, as well as SERS substrates and photoelectrodes for water splitting.     

ZnO nanowire co-growth on SiO2 and C by carbothermal reduction and vapour advection

Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO(2) films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) source-SiO(2) substrate distance. We observe C flakes on the ZnO NWs/SiO(2) substrates which exhibit short NWs that developed on both sides. The SiO(2) and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO(2) were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate.     

Growth and characterization of indium phosphide nanowires on transparent conductive ZnO:Al films

The epitaxial growth of indium phosphide nanowires (InP NWs) on transparent conductive aluminum-doped zinc oxide (ZnO:Al) thin films is proposed and demonstrated. ZnO:Al thin films were prepared on quartz substrates by radio frequency magnetron sputtering, then InP NWs were grown on them by plasma enhanced metal organic chemical vapor deposition with gold catalyst. Microstructure and optical properties of InP nanowires on ZnO:Al thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectric spectroscopy (XPS), photoluminescence and Raman spectroscopy at room temperature. SEM shows that randomly oriented and intersecting InP nanowires were grown to form a network on ZnO:Al thin films. Both wurtzite (WZ) and zincblende (ZB) structures coexist in the random orientation InP NWs on ZnO:Al thin film had been proved by XRD analysis. XPS result indicates Zn diffusion exists in the InP NWs on ZnO:Al. The photoluminescence spectra of InP nanowires with Zn diffusion present an emission at 915 nm. Zn diffusion also bring effect on Raman spectra of InP NWs, leading to more Raman-shift and larger relative intensity ratio of TO/LO.     

Step-shaped bismuth nanowires with metal-semiconductor junction characteristics

Uniform and step-shaped Bi nanowire (NW) arrays have been synthesized by electrochemical deposition inside the uniform and step-shaped nanochannels of an anodic aluminium oxide template. These Bi NWs are highly oriented and single crystalline. The current-voltage characteristics of the parallel uniform Bi nanowires show that the contacts between Bi NWs and gold film do not make significant contributions to the I-V characteristics of the step-shaped Bi NWs. The diameters of the thick segment and the thin segment of the step-shaped Bi NWs are about 70 and 40?nm, respectively. Their current-voltage characteristics show conventional metal-semiconductor junction behaviour. The approach can be exploited to produce one-dimensional metal-semiconductor junctions using step-shaped NWs consisting of other semi-metals without any external doping, which may find various applications in nanotechnology.     

Synthesis of single-crystalline Zn metal nanowires utilizing cold-wall physical vapor deposition

Zinc metal nanowires (NWs) of two different morphologies have been synthesized in a cold-wall physical vapor deposition (CWPVD) chamber at high vacuum conditions and growth temperatures of 150 degrees C. Substrates initially seeded by gold or platinum crystals show NWs of wool-like and/or unidirectional morphologies. Transmission electron microscopy (TEM) studies revealed that the rodlike NWs consist of single-crystalline Zn covered with a thin native oxide. NWs of wool-like morphology are suppressed using platinum as the seed metal. NW growth proceeds via vapor-solid (VS) kinetics without any catalyst particles on the wire tips. The highest observed growth rates exceed the Zn deposition rate by factors up to 860, indicating the dominant role of surface diffusion of Zn adatoms, also along the NWs. The surface diffusion length of Zn adatoms on the NW side facet is determined to be 39 mum. Direct impingement of precursor atoms on the NW tip is not significant for the growth process.     

Tuning gold nanorod-nanoparticle hybrids into plasmonic Fano resonance for dramatically enhanced light emission and transmission

We investigate the optical response of a gold nanorod array coupled with a semicontinuous nanoparticle film. We find that, as the gold nanoparticle film is adjusted to the percolating regime, the nanorod-film hybrids are tuned into plasmonic Fano resonance, characterized by the coherent coupling of discrete plasmonic modes of the nanorod array with the continuum band of the percolating film. Consequently, optical transmission of the percolating film is substantially enhanced. Even more strikingly, electromagnetic fields around the nanorod array become much stronger, as reflected by 2 orders of magnitude enhancement in the avalanche multiphoton luminescence. These findings may prove instrumental in the design of various plasmonic nanodevices.     

Enhanced radiative emission rate and quantum efficiency in coupled silicon nanocrystal-nanostructured gold emitters

We report local-field-enhanced light emission from silicon nanocrystals close to a film of nanoporous gold. We resolve photoluminescence as the gold-Si nanocrystal separation distance is varied between 0 and 20 nm and observe a fourfold luminescence intensity enhancement concomitant with increases in the coupled silicon nanocrystal/nanoporous gold absorbance cross section and radiative decay rate. A detailed analysis of the luminescence data indicated a local-field-enhanced quantum efficiency of 58% for the Si nanocrystals coupled to the nanoporous gold layer.     

Yb3+-Tm3+共掺BiOBr纳米晶的近红外上转换发光特性研究

采用水热法合成了Yb³⁺-Tm³⁺共掺BiOBr纳米晶, 研究了其上转换发光性能。在980 nm光激发下, 样品中Tm³⁺离子实现了³H₄→³H₆、¹G₄→³F₄和¹G₄→³H₆跃迁, 进而发出强烈的近红外光(801 nm)和较弱的红光(655 nm)与蓝光(485 nm)。探讨了样品的上转换发光机理, 上转换发光强度与激发功率的关系表明在980 nm激发下Tm³⁺的蓝光和红光发射为三光子过程, 而近红外发光为双光子过程。随着Yb³⁺浓度增加, 近红外发光显著增强, 近红外光与蓝光(I_{801 nm}/I_{485 nm})的发光强度比高达71.4。研究结果表明, Yb³⁺-Tm³⁺共掺BiOBr纳米晶在生物荧光标记领域具有潜在的应用前景。     

Tailoring the crystal structure of individual silicon nanowires by polarized laser annealing

We study the effect of polarized laser annealing on the crystalline structure of individual crystalline-amorphous core-shell silicon nanowires (NWs) using Raman spectroscopy. The crystalline fraction of the annealed spot increases dramatically from 0 to 0.93 with increasing incident laser power. We observe Raman lineshape narrowing and frequency hardening upon laser annealing due to the growth of the crystalline core, which is confirmed by high resolution transmission electron microscopy (HRTEM). The anti-Stokes:Stokes Raman intensity ratio is used to determine the local heating temperature caused by the intense focused laser, which exhibits a strong polarization dependence in Si NWs. The most efficient annealing occurs when the laser polarization is aligned along the axis of the NWs, which results in an amorphous-crystalline interface less than 0.5 μm in length. This paper demonstrates a new approach to control the crystal structure of NWs on the sub-micron length scale.     

Oxygen Vacancies Dominated NiS2/CoS2 Interface Porous Nanowires for Portable Zn–Air Batteries Driven Water Splitting Devices

The development of highly active and stable oxygen evolution reaction (OER) electrocatalysts is crucial for improving the efficiency of water splitting and metal–air battery devices. Herein, an efficient strategy is demonstrated for making the oxygen vacancies dominated cobalt–nickel sulfide interface porous nanowires (NiS₂/CoS₂–O NWs) for boosting OER catalysis through in situ electrochemical reaction of NiS₂/CoS₂ interface NWs. Because of the abundant oxygen vacancies and interface porous nanowires structure, they can catalyze the OER efficiently with a low overpotential of 235 mV at j = 10 mA cm^?2 and remarkable long‐term stability in 1.0 m KOH. The home‐made rechargeable portable Zn–air batteries by using NiS₂/CoS₂–O NWs as the air–cathode display a very high open‐circuit voltage of 1.49 V, which can maintain for more than 30 h. Most importantly, a highly efficient self‐driven water splitting device is designed with NiS₂/CoS₂–O NWs as both anode and cathode, powered by two‐series‐connected NiS₂/CoS₂–O NWs‐based portable Zn–air batteries. The present work opens a new way for designing oxygen vacancies dominated interface nanowires as highly efficient multifunctional electrocatalysts for electrochemical reactions and renewable energy devices.     

Multi-node CdS hetero-nanowires grown with defect-rich oxygen-doped MoS2 ultrathin nanosheets for efficient visible-light photocatalytic H2 evolution

Developing low-cost and high-efficiency photocatalysts for hydrogen production from solar water splitting is intriguing but challenging.In this study,unique one-dimensional (1D) multi-node MoS2/CdS hetero-nanowires (NWs) for efficient visible-light photocatalytic H2 evolution are synthesized via a facile hydrothermal method.Flower-like sheaths are assembled from numerous defect-rich O-incorporated {0001} MoS2 ultrathin nanosheets (NSs),and {11(2)0}-facet surrounded CdS NW stems are grown preferentially along the c-axis.Interestingly,the defects in the MoS2 NSs provide additional active S atoms on the exposed edge sites,and the incorporation of O reduces the energy barrier for H2 evolution and increases the electric conductivity of the MoS2 NSs.Moreover,the recombination of photoinduced charge carriers is significantly inhibited by the heterojunction formed between the MoS2 NSs and CdS NWs.Therefore,in the absence of noble metals as co-catalysts,the 1D MoS2 NS/CdS NW hybrids exhibit an excellent Ha-generation rate of 10.85 mmol·g-1·h-1 and a quantum yield of 22.0％ at A =475 nm,which is far better than those of Pt/CdS NWs,pure MoS2 NSs,and CdS NWs as well as their physical mixtures.Our results contribute to the rational construction of highly reactive nanostructures for various catalytic applications.     

Direct atomic-scale imaging about the mechanisms of ultralarge bent straining in Si nanowires

To safely and reliably use nanowires (NWs) for exploring new functions for different nanodevices, the mechanical properties and structural evolution of the nanowires under external stress become highly important. Large strain (up to 14%) bending experiments of Si NWs were conducted in a high-resolution transmission electron microscope at atomic resolution. The direct dynamic atomic-scale observations revealed that partial and full dislocation nucleation, motion, escape, and interaction were responsible for absorbing the ultralarge strain of up to 14% in bent Si nanowires. The prevalent full dislocation movement and interactions induced the formation of Lomer lock dislocations in the Si NWs. Finally, in contrast to the unlock process of Lomer dislocations that can happen in metallic materials, we revealed that the continuous straining on the Lomer dislocations induced a crystal-amorphous (c-a) transition in Si NWs. Our results provide direct explanation about the ultralarge straining ability of Si at the nanometer scale.     

Light emission of gold nanoparticles induced by the reaction of bis(2,4,6-trichlorophenyl) oxalate and hydrogen peroxide

Light emission at approximately 415 nm was observed for gold particles with diameters of 2.6-6.0 nm dispersed in a solution containing bis(2,4,6-trichlorophenyl) oxalate and hydrogen peroxide. It was found that the light intensity was independent of the protecting reagents of the gold nanoparticles with similar size, the light intensity with gold nanoparticles of 5.0 and 6.0 nm in diameter was stronger than that with gold nanoparticles of 2.6 and 2.8 nm in diameter, and the light intensity increased linearly with the concentration of the gold nanoparticles using 6.0-nm gold nanoparticles. The gold nanoparticles were identified as emitting species, and the quantum yield was determined to be (2.8 +/- 0.3) x 10(-5) using 6.0-nm gold nanoparticles. The light emission is suggested to involve a sequence of steps: the oxidation reaction of bis(2,4,6-trichlorophenyl) oxalate with hydrogen peroxide yielding an energy-rich intermediate 1,2-dioxetanedione, the energy transfer from this intermediate to gold nanoparticles, and the radiative relaxation of the as-formed exited-state gold nanoparticles. The observed luminescence is expected to find applications in the field of bioanalysis owing to the excellent biocompatibility and relatively high stability of gold nanoparticles.     

Synthesis,Properties,and Biological Application of Perfect Crystal Gold Nanowires:A Review

In the last decade,numerous kinds of nanoscale materials have been created.Their characteristics are critically influenced by their synthetic or fabrication methods.In this review article,we introduce perfect crystal gold nanowires(Au NWs) synthesized by vapor transport method and summarize their material properties and biological applications.Single-crystalline Au NWs having no defects or twins show unique mechanical,electrical,and electrochemical characteristics.Notably,they are exceptionally competent in penetrating cells or tissues with minimum biological damage and in the electrical analysis and manipulation of biological activities in the cells and/or tissues.It is expected that the Au NWs would give us technological breakthrough in diverse applications such as nanoscale functional components as well as new insights in fundamental material science.