玻璃衬底上氮-铟共掺ZnO的制备及表征

以醋酸锌水溶液为前驱体,分别以醋酸铵和硝酸铟为氮(N)源和铟(In)源,采用超声喷雾热分解方法在普通玻璃衬底上沉积了氮-铟(N-In)共掺杂ZnO薄膜.并采用X射线衍射,场发射扫描电镜、霍尔效应、透射光谱等分析方法,研究了N,In共掺杂和沉积温度对ZnO薄膜的晶体结构、成分及含量、形貌、电学性能、光学性能的影响.结果表明:通过氮-铟共掺杂,ZnO基薄膜具有良好的的电学性能,但是均为n型导电,与相关文献中的结果完全相反.     

超声电化学沉积ZnO薄膜及其机理研究

采用超声电化学沉积生长了c轴取向的ZnO薄膜,并与常规电化学沉积生长的ZnO薄膜进行了比较.采用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计研究了样品的晶体结构、表面形貌以及光学性能.结果表明,常规电化学沉积生长的ZnO薄膜为纳米柱状结构,随着沉积电压的增加,c轴取向率呈极值变化,热退火可提高这种薄膜的透射率.超声电化学沉积生长的ZnO薄膜,在1.5V低沉积电压下仍为柱状结构,但比未加超声电化学法沉积的样品具有更好的c轴取向,沉积电压增加到2.0V时样品则变为麦粒状结构,热退火后其透射率几乎不变.     

超声喷雾热分解法制备p型ZnO多晶薄膜及其光致发光性能研究

采用超声喷雾热分解法,室温下在玻璃衬底上沉积了N-Al共掺杂的P型ZnO薄膜.采用XRD和SEM测试手段对薄膜进行了晶体结构和表面形貌的表征,结果表明所制备的薄膜为六角纤锌矿结构的ZnO薄膜,表面均匀,结构致密,具有强烈的呈c轴垂直于衬底的(002)择优取向.对薄膜进行了电学测试和光致发光性能测试,并对薄膜的光致发光性能进行了研究.     

衬底离子束表面氮化对ZnO薄膜性质的影响

采用射频磁控溅射法在抛光硅片上沉积了一系列ZnO薄膜样品.通过对薄膜样品X射线衍射谱的分析、原子力显微图的观察、吸收光谱和荧光光谱的研究,发现Si衬底的离子束表面氮化对ZnO薄膜的晶体结构、表面形貌和光学性质有重要影响.在衬底温度为200℃、高纯氩氧比例为3:1、压强为1.5Pa的条件下,在经离子束表面氮化预处理的Si衬底上溅射沉积的ZnO薄膜,经450℃真空退火,成为高(0002)晶面取向的ZnO薄膜,并具有良好的光学性质.     

透明致密ZnO薄膜的恒电流沉积及生长过程研究

采用阴极恒电流沉积方法, 以Zn(NO ₃)₂水溶液为电沉积液, 在经电化学预处理后的ITO导电玻璃上生长了具有c轴高度择优取向、均匀致密的透明ZnO薄膜. 采用X射线衍射、扫描电镜和光学透过谱等技术, 对不同沉积时间条件下薄膜的结晶特性、表面和断面结构、光学性质等进行了研究. 结果表明, 沉积时间对ZnO薄膜质量影响明显: 在薄膜生长后期(120min), ZnO薄膜的结晶性和表面平整度明显降低, 晶粒尺寸增大, 可见光透过率下降, 表明高质量ZnO薄膜的电化学沉积有一最佳生长时间; 此外, 薄膜厚度随时间呈线性变化, 表明可通过生长时间实现对ZnO薄膜厚度的精确控制.     

薄膜厚度对Au/ZnO/n+-Si薄膜压敏电阻器阈值电压的影响

本文采用直流磁控溅射法和多次沉积与掩膜技术,在n+Si(100)衬底上制备了一系列厚度不同的ZnO薄膜,表面镀Au的探针与ZnO/n+-Si构成了一系列ZnO层厚不同的Au/ZnO/n+-Si薄膜压敏电阻器.利用X射线衍射确定沉积的ZnO薄膜为高度c轴(0002)取向的晶体薄膜,利用紫外-可见透射光谱对沉积的ZnO薄膜...     

电沉积-热解法制备Cr2O3薄膜及其抗高温氧化性能

Cr2O3薄膜具有保护性,采用电沉积-热解法制备还未见报道.采用电沉积-热解法在304不锈钢表面制备Cr2O3薄膜,并将其于900℃高温氧化100 h,研究了电沉积溶液[Cr(NO3)3酒精]浓度、沉积电压对Cr2O3薄膜抗高温氧化性能的影响,分析高温氧化样的组织结构.结果表明:电沉积-热解法制备的Cr2O3薄膜显著提高了304不锈钢的抗高温氧化性能;沉积电压为25 V,电沉积溶液浓度为0.10 mol/L条件下制备的Cr2O3薄膜抗高温氧化性能最佳.     

脉冲激光沉积ZnO薄膜的结构和光学特性研究

采用脉冲激光，在Si（001）衬底上生长ZnO薄膜，利用X射线衍射（XRD），原子力显微镜（AFM）和光致发光光谱（PL）等测试手段研究了不同衬底温度所生长的ZnO薄膜结构特征和光学性能。研究表明：衬底温度影响ZnO薄膜结构和光学性能。在500℃～600℃沉积范围内随着温度升高，ZnO薄膜结构和光学性能提高。     

基底温度对磁控溅射制备ZnO薄膜性能的影响

利用射频磁控溅射,在Si基底上制备了ZnO薄膜.采用电子薄膜应力分布测试仪、X射线衍射和傅立叶变换红外光谱仪等检测手段研究了基底温度对其应力、微结构及光学性能的影响.ZnO薄膜在(002)晶面具有良好的c轴取向.在基底温度为200～300 ℃范围内,ZnO薄膜具有良好的结晶性能和较均匀的应力分布.红外光谱在430cm-1附近出现了Zn-O键的振动吸收峰.     

电化学沉积法制备纳米多孔ZnO/曙红复合薄膜

以Zn(NO3)2和曙红的混合溶液为沉积液,采用阴极电化学沉积法在ITO导电玻璃上制备了纳米多孔ZnO/曙红复合膜.考察了电化学预处理过程和曙红浓度对薄膜晶体结构、微观形貌和光学性能的影响.结果表明,引入短时间的电化学预处理过程能提高复合薄膜中ZnO的结晶质量,并诱导ZnO沿c轴定向生长.随着电沉积液中染料浓度的增大,所得薄膜的结晶质量下降,薄膜由六角晶颗粒逐渐向纳米多孔结构转变.当沉积液中曙红浓度为50μmol/L 时所得复合薄膜具有最大膜厚,装载的曙红量最高.以该复合膜为光阳极制作了太阳能电池原型器件,其开路电压为0.49V,短路电流为0.67mA/cm2,总光电转换效率为0.105%.     

ZnO nanoparticles induced effects on nanomechanical behavior and cell viability of chitosan films

The aim of this paper is to develop novel chitosan–zinc oxide nanocomposite films for biomedical applications. The films were fabricated with 1, 5, 10 and 15% w/w of zinc oxide (ZnO) nanoparticles (NPs) incorporated with chitosan (CS) using a simple method. The prepared nanocomposite films were characterized using atomic force microscopy, Raman and X-ray diffraction studies. In addition, nano and micro mechanical properties were measured. It was found that the microhardness, nanohardness and its corresponding elastic modulus increased with the increase of ZnO NP percentage in the CS films. However, the ductility of films decreased as the percentage of ZnO NPs increased. Cell attachment and cytotoxicity of the prepared films at days two and five were evaluated in vitro using osteoblasts (OBs). It was observed that OB viability decreased in films with higher than 5% ZnO NPs. This result suggests that although ZnO NPs can improve the mechanical properties of pure CS films, only a low percentage of ZnO NPs can be applied for biomedical and bioengineering applications because of the cytotoxicity effects of these particles.     

Synthesis of nano-dimensional ZnO and Ga doped ZnO thin films by vapor phase transport and study as transparent conducting oxide

We report synthesis of polycrystalline ZnO and Ga doped ZnO (ZnO:Ga) thin films (approximately 80 nm) on Si and quartz substrates in a non-vacuum muffle furnace, a simple and cost-effective route, without any catalyst/reactive carrier gases, at relatively low processing temperature of 550 degrees C. The crystalline phases of the films are identified by grazing angle X-ray diffraction (GAXRD). The growth of ZnO films is examined with scanning electron microscope (SEM) as a function of deposition time. An optical transmission of approximately 90% is observed for pure ZnO film having a resistivity of approximately 2.1 Omega-cm as measured by van der Pauw technique. Doping with Ga results in single phase ZnO:Ga films, retaining an optical transmission of about 80% and three orders of magnitude decrease in resistivity as compared to pure ZnO film.     

Synthesis of ZnO nanowires by the hydrothermal method,using sol–gel prepared ZnO seed films

Zinc oxide (ZnO) nanowires with various morphologies are synthesized by the hydrothermal method on silicon substrates coated with ZnO thin films. The ZnO films are used as the seed layer and are prepared using the sol–gel technique. Experimental results demonstrate that the synthesis of ZnO nanowires is dependent on the crystalline properties of the ZnO seed-layer films. Sol concentration is the controlled parameter for the preparation of ZnO seed-layer films in this study. The ZnO films are found to have the hexagonal wurtzite structure with highly preferred growth along the c-axis at suitable sol concentrations. The vertically aligned ZnO nanowire arrays on the substrates are believed to be the result of the epitaxial growth of the ZnO seed layer. Scanning electron microscopy shows that nanowires with uniform distribution in length, diameter, and density are obtained. X-ray diffraction patterns clearly reveal that the ZnO nanowires are primarily grown along the c-axis direction. Transmission electron microscopy and selected-area electron diffraction measurements show that the nanowires have good crystalline properties. The well-aligned and high surface areas of the ZnO nanowires make them a potential candidate for applications in solar cells, field emission devices, and ultra-sensitive gas sensors.     

连续离子层吸附与反应法(SILAR)生长ZnO多晶薄膜的研究

采用连续离子层吸附与反应法(SILAR),以锌氨络离子([Zn(NH₃)₄]²⁺)为前驱体溶液,在玻璃衬底上沉积了ZnO薄膜,以XRD和SEM等手段分析了薄膜的晶体结构和表面、断面形貌,考察了空气气氛下的退火过程对ZnO薄膜晶体结构与微观形貌的影响,并初步探讨了以SILAR方法沉积ZnO薄膜的机理.结果表明,经200次SILAR沉积循环,所得ZnO薄膜为红锌矿结构的多晶薄膜,沿<002>方向择优生长;薄膜表面致密、光滑均匀,厚度约800nm.退火处理使ZnO薄膜氧缺位减少,晶粒沿c轴取向增强;随退火温度升高,锌间隙原子增加;500℃退火时,ZnO薄膜发生再结晶.减小前驱体溶液的[NH₃·H₂O]/[Zn²⁺]比率可提高ZnO薄膜生长速率.     

Electrodeposition of template free hierarchical ZnO nanorod arrays via a chloride medium

We have successfully grown template and buffer free ZnO nanorod films via chloride medium by controlling bath temperature in a simple and cost effective electrochemical deposition method. Thin films of ZnO nano-rods were obtained by applying a potential of ?0.75 V by employing Ag/AgCl reference electrode for 4 h of deposition time. The CV measurements were carried out to determine potential required to deposit ZnO nanorod films whereas chronoamperometry studies were carried out to investigate current and time required to deposit ZnO nanorod films. The formation of ZnO nanorod has been confirmed by scanning electron microscopy (SEM) and Raman spectroscopy. Low angle XRD analysis confirms that ZnO nanorod films have preferred orientation along (101) direction with hexagonal wurtzite crystal structure. The SEM micrographs show nice surface morphology with uniform, dense and highly crystalline hexagonal ZnO nanorods formation. Bath temperature has a little influence on the orientation of nanorods but has a great impact on their aspect ratio. Increase in bath temperature show improvement in crystallinity, increase in diameter and uniform distribution of nanorods. Compositional analysis shows that the amount of oxygen is ~49.35 % and that of Zn is ~50.65 %. The optical band gap values were found to be 3.19 and 3.26 eV for ZnO nanorods prepared at bath temperature 70 and 80 °C respectively. These results indicate that by controlling the bath temperature band gap of ZnO nanorods can be tailored. The obtained results suggest that it is possible to synthesize ZnO nanorod films by a simple, cost effective electrodeposition process which can be useful for opto-electronic devices fabrication.     

A selective ethanol gas sensor based on spray-derived Ag–ZnO thin films

A simple and cost-effective spray pyrolysis technique was employed to synthesize silver-doped zinc oxide (Ag–ZnO) thin films on the glass substrates from aqueous solutions of zinc acetate and silver nitrate precursors at 450 °C. The effects of Ag doping on structural, morphological, and gas-sensing properties of films were examined. The X-ray diffraction spectra of the Ag–ZnO films showed the polycrystalline nature having hexagonal crystal structure. Scanning electron microscopy (SEM) images of the pure ZnO films revealed the uniform distribution of the spherical grains (~80 nm size). Tiny Ag nanoparticles are clearly visualized in the SEM of Ag–ZnO films. The investigation of the effect of Ag doping on the gas-sensing properties of the Ag–ZnO revealed that the 15 % Ag-doped ZnO sample has the highest gas sensitivity (85 %) and excessive Ag doping in ZnO degraded the gas sensitivity. A possible mechanism of Ag–ZnO-based sensor sensitivity to the target gas is also proposed.     

ZnO薄膜的制备及应用

本文简要介绍了ZnO的晶体结构和其具有的光电性能,然后介绍了薄膜的几种制备方法,并分别阐述了这些方法的优、缺点,以及ZnO薄膜、掺杂ZnO薄膜的应用.     

ZnO纳米棒阵列和薄膜的同步外延生长及其光电化学性能

使用化学气相沉积法在a面蓝宝石衬底上同步外延生长氧化锌(ZnO)竖直纳米棒阵列和薄膜,研究了阵列和薄膜的光电化学性能。结果表明,纳米结构中的竖直单晶纳米棒有六棱柱形和圆柱形,其底部ZnO薄膜使竖直纳米棒互相联通。与ZnO纳米薄膜的比较表明,这种纳米结构具有优异的光电化学性能,其入射光电流效率是ZnO纳米薄膜的2.4倍;光能转化效率是ZnO纳米薄膜的5倍。这种纳米结构优异的光电化学性能,可归因于其高表面积-体积比以及其底部薄膜提供的载流子传输通道。本文分析了这种纳米结构的生长过程,提出了协同生长机理：Au液化吸收气氛中的Zn原子生成合金,合金液滴过饱和后ZnO开始成核,随后在衬底表面生成了ZnO薄膜。同时,还发生了Zn自催化的气-固(VS)生长和Au催化的气-液-固(VLS)生长,分别生成六棱柱纳米棒和圆柱形纳米棒,制备出底部由薄膜连接的竖直纳米棒阵列。     

Realization of nonpolar a-plane ZnO films on r-plane sapphire substrates using a simple single-source chemical vapor deposition

Nonpolar (112?0) ZnO thin films (a-plane ZnO) have been grown on (11?02) sapphire substrates (r-plane sapphire) by a simple atmospheric pressure single-source chemical vapor deposition (SSCVD) approach. The crystallinity, surface morphology and optical property of the films were investigated using high-resolution X-ray diffraction (HRXRD), scanning electron microscope (SEM) and transmission spectrum, respectively. XRD results revealed that the ZnO films were grown on the substrates epitaxially along (112?0) orientation, and the epitaxial relationship between the ZnO films and the substrates was determined to be (112?0)ZnO∥(11?02) Al2O3, and [1?101]ZnO∥[022?1]Al₂O₃. The SEM image exhibited that the a-plane ZnO films showed a high density of well-aligned ZnO sheets with rectangular structure. The transmission spectrum showed that the ZnO films were highly transparent in the visible region.     

Study on the doping effect of Li-doped ZnO film

Zinc oxide (ZnO) is an excellent piezoelectric material with simple composition. ZnO film is applied to the piezoelectric devices because it has high resistivity and highly oriented direction at c-axis. Structural and electrical properties in ZnO films are influenced by deposition conditions. Lithium-doped ZnO (LZO) films were deposited by RF magnetron sputtering method using Li-doped ZnO ceramic target with various ratios (0 to 10 wt.% LiCl dopant). LZO films revealed high resistivity of above 10⁷ Ω cm with smooth surface when they were deposited with 4% LiCl-doped ZnO target under room temperature. However, their c-axis orientation was worse than the c-axis orientation of pure ZnO films. We have also studied on structural, optical and electrical properties of the ZnO films by XRD, AFM, SEM, XPS, and 4-point probe analyses. We concluded that LZO films were deposited with 4 wt.% LiCl-doped ZnO target and were apposite for piezoelectrical application.