化学水浴沉积CdS薄膜晶相结构及性质

采用CBD法在醋酸镉溶液体系中制备CdS半导体薄膜,研究了溶液组份的浓度对CdS结晶结构的影响.增加乙酸胺的浓度、提高溶液的pH值有利于生成立方晶CdS,反之则易于生成六方晶CdS.无论立方相还是六方相CdS薄膜,电阻率均在104～105Ω·cm范围,结晶均匀细致.用六方晶为主和立方晶为主的CdS制备的CIGS太阳电池最高效率分别达到12.10%和12.17%.     

化学水浴沉积CdS薄膜晶相结构及性质

采用CBD法在醋酸镉溶液体系中制备CdS半导体薄膜，研究了溶液组份的浓度对CdS结晶结构的影响．增加乙酸胺的浓度、提高溶液的pH值有利于生成立方晶CdS，反之则易于生成六方晶CdS．无论立方相还是六方相CdS薄膜，电阻率均在10~4～10~5Ω·cm范围，结晶均匀细致．用六方晶为主和立方晶为主的CdS制备的CIGS太阳电池最高效率分别达到12.10%和12.17%．     

CdS薄膜的制备及其性能

采用化学池沉积(CBD)法,在三种衬底(玻片、ITO玻片、SnO2玻片)上沉积CdS薄膜,并利用扫描电镜(SEM)、透射光谱、X射线衍射(XRD)和微电流高阻计等方法对沉积膜进行了测试分析,计算出CdS薄膜的能隙宽度和电导激活能,阐述了CBD法中CdS薄膜的生长沉积机制以及不同衬底对沉积效果的影响.结果表明:不同衬底的成膜效果差异较大,其中以SnO2玻片效果最佳.     

CdS薄膜的制备及其性能

采用化学池沉积(CBD)法,在三种衬底(玻片、ITO玻片、SnO2 玻片)上沉积CdS薄膜,并利用扫描电镜(SEM)、透射光谱、X射线衍射(XRD)和微电流高阻计等方法对沉积膜进行了测试分析,计算出CdS薄膜的能隙宽度和电导激活能,阐述了CBD法中CdS薄膜的生长沉积机制以及不同衬底对沉积效果的影响.结果表明:不同衬底的成膜效果差异较大,其中以SnO2 玻片效果最佳     

对低温下制得的CdS薄膜电学性质的研究

采用化学水浴沉积法研究在低温条件下以及硫尿浓度不同的溶液中生长出的硫化镉薄膜的电学性质。采用X-射线衍射(XRD)仪确定退火后的样品是六方相,在(002)、(112)和(004)方向优势生长;使用紫外-可见分光光度计发现各样品的光学性质符合硫化镉作为窗口材料的要求;利用原子力显微镜发现各样品的晶粒形状、均匀性和致密性差异较大;利用化学工作站进行样品的电容-电压测试发现,各样品的掺杂浓度差异很大,其中有的样品掺杂浓度为1.2×1017cm-3,这样的掺杂浓度适合制造光电器件。     

联氨对化学水浴沉积ZnS薄膜的影响

在A(ZnSO4、SC(NH2)2、NH4OH)和含有联氨的B(ZnSO4、SC(NH2)2、NH4OH、(NH2)2)两种水溶液中采用化学水浴法沉积ZnS薄膜,研究了联氨对薄膜沉积过程和薄膜性质的影响.结果表明,加入少量联氨以后,薄膜沉积速度明显增加.两种溶液沉积的ZnS都为立方相结构,且含有联氨的B溶液沉积的ZnS薄膜表面附着颗粒较少.在含有联氨的B溶液中沉积的ZnS薄膜结晶度和短波区的透过率均高于A溶液沉积的ZnS薄膜.将两种溶液沉积的ZnS薄膜作为电池缓冲层制备铜铟镓硒(CIGS)薄膜太阳电池,加入联氨沉积的ZnS制备的CIGS电池转换效率达到7.77%,比不加联氨沉积的ZnS制备的CIGS电池转换效率提高了1.3%.     

CIGS薄膜太阳能电池缓冲层CdS薄膜的制备研究

目前CdS材料的制备方法有很多种,但是最常用的是化学水浴法。本文研究了浓度、反应溶液pH值、温度、沉积时间对CdS缓冲层薄膜的影响,对CIGS薄膜太阳能电池缓冲层CdS薄膜的制备方法进行了论述。     

银掺杂对MoS_2薄膜特性的影响

二硫化钼(MoS2)是一种具有类似石墨烯结构和性能的新型二维层状化合物,近年来因其独特的物理化学特性而成为研究热点。采用化学气相沉积法(CVD),以掺杂银的MoS2饱和溶液为原料,氩气为输运气体,在p-Si衬底上制备MoS2薄膜,并研究了银掺杂对MoS2薄膜的表面形貌、晶体结构、光吸收特性以及电学特性的影响。研究发现,银掺杂并未改变MoS2薄膜的晶体结构,而使MoS2薄膜的结晶度更好;银掺杂的MoS2薄膜反射率降低,光吸收增强,进而可以提高器件的光电转换效率。另外,银掺杂的MoS2薄膜表面更均匀平整,同时具有更良好的电学特性,其电子迁移率高达1.154×104 cm2·V-1·s-1,可用于制造一些晶体管和集成电路等半导体器件。     

飞秒激光制备CdS薄膜滤波器的研究

采用脉冲飞秒激光沉积方法,在石英衬底上制备了CdS薄膜滤波器.研究显示衬底温度在100～600℃范围内变化对CdS薄膜衬底的结构及光学特性有重要影响,在450℃的衬底温度下所生长的CdS薄膜具有较好的结构质量,该薄膜在500nm附近具有较陡的吸收带边及良好的光学滤波性能.     

飞秒激光制备CdS薄膜滤波器的研究

采用脉冲飞秒激光沉积方法,在石英衬底上制备了CdS薄膜滤波器.研究显示衬底温度在100～600℃范围内变化对CdS薄膜衬底的结构及光学特性有重要影响,在450℃的衬底温度下所生长的CdS薄膜具有较好的结构质量,该薄膜在500nm附近具有较陡的吸收带边及良好的光学滤波性能.     

Effect of concentration of cadmium sulfate solution on structural,optical and electric properties of Cd1-xZnxS thin films

Cd1-xZnxS thin films were deposited by chemical bath deposition(CBD)on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film.The SEM results show that the thin film sur-faces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity.The distribution dia-grams of thin film elements illustrate the film growth rate changes on the trend of the increase,decrease,and increase with the increase of cadmium sulfate concentration.XRD studies exhibit the crystal structure of the film is the hexagonal phase,and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M.Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value Eg can be expressed by the equation Eg(x)=0.59x2+0.69x+2.43.Increasing the zinc content can increase the optical band gap,and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration,however,all of them have good transmittance.At a concen-tration of 0.005 M,the thin film has good absorbance in the 300-800 nm range,80％transmittance,and band gap value of 3.24 eV,which is suitable for use as a buffer layer for solar cells.     

不同方法及衬底类型对CdS多晶薄膜性能的影响

采用化学水浴法和磁控溅射法分别在AZO、FTO、ITO透明导电玻璃衬底上制备了CdS薄膜,利用扫描电镜、XRD以及透射光谱等测试手段,研究了两种制备方法对不同衬底生长CdS薄膜形貌、结构和光学性能的影响.研究结果表明,不同方法制备的CdS薄膜表面形貌均依赖于衬底的类型,水浴法制备的CdS薄膜晶粒度较大,表面相对粗糙.不同方法制备的CdS薄膜均为立方相和六角相的混相结构,溅射法制备的多晶薄膜衍射峰清晰、尖锐,结晶性较好.水浴法制备的CdS薄膜透过率整体低于溅射法,但在短波处优势明显.     

Characterization and antibacterial capabilities of nanocrystalline CdS thin films prepared by chemical bath deposition

Antibacterial capabilities of nanocrystalline cadmium sulfide (CdS) thin films have been developed against Gram-positive and Gram-negative bacteria in dark and sunlight at 60 °C. For this purpose, a strain of Gram-positive Staphylococcus aureus, and two strains of Gram-negative bacteria (Pseudomonas aeruginosa, and Escherichia coli) were used. The nanocrystalline CdS thin films have been prepared using a chemical bath deposition (CBD) method at different thicknesses (50, 80 and 100 nm). The different deposition parameters including the speed of rotation of substrate, temperature of chemical bath, pH of solution and time of the deposition were optimized. The Polyvinylpyrrollidone (PVP) was successfully used as capping agent in order to stop the agglomeration in the CdS thin films. It was found that, CdS thin films have remarkable antibacterial activity in dark and sunlight and it could be applied as antimicrobial agent in medical field. In order to confirm the crystalline structure of CdS thin films, the polycrystalline nature of the deposited CdS thin films with hexagonal structure was obtained. Furthermore, the structural parameters including lattice parameters, cell volume, the space group, average grain size, dislocation density and the strain have been calculated. The topography and surface roughness of the CdS thin films have been studied before and after the bacteriostatic effect using Scanning Electron Microscopy (SEM). Furthermore, the compositions of nanocrystalline CdS thin films have been evaluated using Energy Dispersive X-ray emission (EDX) and a Transmission Electron Microscope (TEM). Based on the optical measurements in the range of 300–2500 nm, the band gap energy of the prepared CdS thin films was found to be 2.4 eV.     

沉积温度对多元醇法制备硫化镉薄膜的影响

CdS thin films were successfully deposited onto glass substrates for the first time by the polyol method using cadmium acetate, thiourea and diethylene glycol as the raw materials. The effects of the deposition tempera- ture from 120 to 200 ℃ in steps of 20 ℃on the structure, morphology and optical properties of the resultant films were investigated. It was found that the crystallinity was improved and the value of the surface average roughness was decreased with increasing the deposition temperature. The average grain sizes of the CdS thin films were 77.16 and 76.61 nm at 140 and 180 ℃, respectively. All samples showed excellent transmittance and the band gaps were found to reduce from 2.55 to 2.45 eV with the increase of the deposition temperature, which was attributed to the improvement of crystallinity.     

Growth modes of solution-grown CdS thin films

The growth modes of CdS thin films on glass in a chemical bath were analysed using scanning electron microscopy and optical microscopy. The results of these studies show that the film growth occurs by ion-by-ion condensation and by colloidal particles of CdS adhering to the substrate. Both mechanisms are operative from the initial stages of film growth. The predominance of one or other of these two growth modes depends on the abundance of Cd and S ions present in the solution, which is determined by the amount of complexing and sulphurising agents and ammonia used for the controlled release of Cd and S ions into the solution. The growth mode influences the optical properties of the films.     

Growth mechanisms and their effects on the opto-electrical properties of CdS thin films prepared by chemical bath deposition

Chemically deposited CdS exhibits high sensitivity in the opto-electrical performance to the growth mechanisms. Hence it is of a great interest to study the effects of growth mechanisms on the opto-electrical performance in such films. Studies were carried out by the means of spectroscopic ellipsometry, and coupled with structural, optical, and electrical characterization. A range of bath temperatures (55 °C–95  °C) were used as the means to alter the growth mechanisms. Ion-by-ion process dominated deposition at lower bath temperatures throughout the length of the deposition. This mechanism produced films composed of single phase cubic crystals with corresponding opto-electrical properties inherent to such structures. Complex formations at higher bath temperatures supplement the sole ion-by-ion mechanisms with the cluster-by-cluster mechanism. This results in a mixed cubic/hexagonal structure, and deviation from stoichiometry. As a result, carrier concentrations and mobility increased nearly eight and four fold respectively. Resistivity decreased more than four times from 33.2 to 7.5 Ω cm. A noticeable decrease of, ~0.2 was observed in the refractive index and an increase of ~0.07 eV in the band gap is also reported. Nuclear magnetic resonance analysis confirms deviation from stoichiometry in the cluster-by-cluster mechanisms, resulting in interstitially trapped Cd⁺² and S⁻² ions. The trapped ions act as donors in the film enhancing its electrical performance.     

Effect of four different zinc salts and annealing treatment on growth,structural, mechanical and optical properties of nanocrystalline ZnS thin films by chemical bath deposition

ZnS thin films were deposited from four different zinc salts on glass substrates by chemical bath deposition method. Different anions of zinc salts affect the deposition mechanism and growth rate, which influence the properties of the films significantly. The ZnS thin film deposited from ZnSO₄ is smoother, thicker, more homogeneous and compact, nearly stoichiometric, comparing with the films deposited from Zn(CH₃COO)₂ and Zn(NO₃)₂, and ZnCl₂. The scratch test of bonding force between ZnS film and substrate shows that the ZnS film deposited from ZnSO₄ has the most excellent adhesion with the substrate. The presence of SO₄²⁻ promotes heterogeneous ZnS thin film growth via ions by ions deposition, and the films deposited from Zn(CH₃COO)₂ and Zn(NO₃)₂ are formed via clusters by clusters deposition. XRD and HRTEM results show that cubic ZnS films are obtained after single deposition, and the grain size of ZnS thin film deposited from ZnSO₄ for 2.5 h is 10 nm. The average transmission of all films is greater than 85% in the wavelength ranging from 600 to 1100 nm, and the transmission of films deposited from ZnSO₄ or Zn(NO₃)₂ for 1.5, 2 and 2.5 h is greater than 85% in the wavelength varying from 340 to 600 nm, which can enhance the blue response. The band gaps of all ZnS thin films are in the range of 3.88–3.99 eV. After annealing treatment, the mechanical and optical properties of the ZnS thin film deposited from ZnSO₄ are improved significantly.     

CdS/TiO_2纳米棒阵列复合电极制备及性能研究

染料敏化太阳电池以其良好的电池性能、简单的制作工艺、廉价的制作成本等优点越来越受到人们的关注。尝试用水热合成法在透明导电玻璃FTO(SnO2∶F)衬底上一步制备出高度有序的TiO2单晶纳米棒阵列,使用扫描电子显微镜SEM及X射线衍射仪(XRD)等对其进行表征分析。用制备的样品作为光阳极封装电池并对其进行电池性能的测试。用化学浴沉积(CBD)方法对制备的样品进行CdS表面修饰,通过测量其紫外-可见吸收光谱及明暗场的电流-电压特性曲线等考察电池性能随硫化镉修饰次数的变化规律。