利用同质缓冲层溅射生长c轴择优取向氮化铝薄膜

采用射频反应磁控溅射技术，利用低温低功率下生长的氮化铝（AlN）作为缓冲层，在铟锡复合氧化物（ITO）玻璃衬底上制备出具有良好c轴择优取向的多晶AlN薄膜.采用X射线衍射仪（XRD）、原子力显微镜（AFM）和场发射扫描电子显微镜（FESEM）研究了缓冲层对薄膜结晶特性和表面形貌的影响.结果表明，该缓冲层在提高AlN薄膜结晶质量的同时，薄膜的表面粗糙度由19.1 nm减小到2.5 nm，使薄膜表面更为平滑、致密.剖面扫描电子显微镜（SEM）照片显示AlN晶粒呈高度一致的柱状生长体制.通过分析样品的透射光谱，计算得到AlN薄膜的折射率和消光系数分别为2.018 7和0.007 7.     

Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

GaN based III-nitrides are one of the most promising wide band gap semiconductors for the fabrication of optoelectronic devices emitting in the green-ultra-violet range and high-temperature, high-speed electronic devices, because these compounds have wide and direct energy band-gap[1]. Although a lattice-matched substrate is difficult to obtain, -Al2O3 has been successfully used as the substrate to grow GaN film by metalorganic chemical vapor deposition (MOCVD). GaN grown on sapphire cont…     

碳化硅晶体的可见近红外透射光谱分析

利用紫外可见分光光度计和红外光谱测量系统,在室温下分别测量了本征和掺氮6H-SiC单晶的可见和近红外透射光谱.由光谱分析可知,6H-SiC单晶在可见及近红外区是透明的,而掺氮导致SiC单晶在可见和近红外区都有吸收,掺杂还使得带隙变窄.利用透射光谱,得到6H-SiC单晶在可见和近红外区的色散关系曲线和色散方程.此外,对掺...     

Structural and optical characteristics of Al_xGa_(1-x)N/AlN superlattice

AlN/Al0.3Ga0.7N superlattices were grown on (0001) sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The superlattice period varies from 6 to 30. The layer thickness of different period stack was designed. GaN or AlGaN template was employed for growing AlN/AlGaN superlattices. Reflectivity, SEM, AFM and XRD data of the AlxGa1-xN/AlN superlattices are presented. It is found that the templates used have an intensive impact on surface roughness and interfacial properties of following AlN/AlGaN superlattices. The result of atomic force microscopy indicates that AlN/AlGaN superlattices grown on GaN template exhibit quasi-two-dimensional growth mode. The resulting superlattice has a smooth surface morphology and distinct interface. No crack is observed in the area of a 2-inch wafer.     

AlN粉末在氮氧混合气氛下抗水解性能的研究

研究了在高氮/低氧混合气氛下热处理(500~700℃)对AlN(氮化铝)粉体表面特性及粉体抗水解性能的影响.实验结果表明:在高氮/低氧混合气氛保护下的AlN粉末表面覆盖了氧化铝薄膜层结构,有效地抑制了AlN与水的反应,阻碍了水分子向AlN粉末表面侵蚀的作用,提高了AlN粉末在潮湿环境中的抗水化能力,且热处理后粉末在水溶液中高剪切应力球磨过程中具有非常好的稳定性.     

正交实验法优化六方氮化硼薄膜的制备工艺

采用射频磁控溅射法,在Si(100)衬底上制备了适用于声表面波(SAW)器件的氮化硼(BN)薄膜。通过正交实验法,以薄膜中六方相的纯度和取向为指标,优化了磁控溅射方法制备六方BN(h-BN)薄膜的工艺条件。利用傅里叶变换红外光(FTIR)谱和X射线衍射(XRD)谱对薄膜进行了表征,实验结果表明,溅射功率为300W、无衬底负偏压、温度为400℃和N2∶Ar=7∶8vol.%时可以制备出高纯度且高c-轴择优取向的h-BN。     

SAPMAC法生长大尺寸蓝宝石单晶工艺研究

采用冷心放肩微量提拉法(SAPMAC法)在真空条件下,选择<101-0>方向的籽晶成功生长了尺寸为220×200 mm的大尺寸蓝宝石晶体,生长时结晶区温度梯度为0.5~1.0℃/mm,生长速度为0.1~2 mm/h.对生成晶体的透射率进行了检测,测试结果表明在2 500~4 000 cm-1范围内,1mm厚度蓝宝石晶片的透过率达85%以上.     

Influence of dopant content on morphology and optical constants of ZnO: Na films by sol-gel method

Undoped and Na-doped ZnO films were deposited by sol-gel method. The effects of sodium incorporation on structure, surface morphology and optical constants of the films were investigated. X-ray diffraction patterns show the hexagonal wurtzite polycrystalline structure and that the sodium incorporation leads to the change in the structural characteristics of ZnO films. The SEM observations show that the surface morphology of the films is affected by the sodium incorporation. The transmission spectra show that the average transmittance of the films is above 85% in the visible range. The absorption edge initially blue-shifts and then red-shifts with the increase of Na doping content. The optical constants of these films were calculated using transmission spectra. Refractive indices of the films in the visible range decrease at first and then increase with increasing Na doping content.     

锗硅薄膜的光学特性研究

GeSi薄膜的光学特性可以随内部组分的变化而变化,在光电子集成方面优于GaAs、InP等传统的发光材料,已引起了人们的广泛关注.采用等离子体CVD法在玻璃衬底上沉积GeSi薄膜,研究了不同生长条件下的样品的光学特性,从样品的紫外\|可见光反射谱和透射谱计算出光学带隙,发现随着Ge含量的增加,薄膜的光学带隙减小.并且研究了样品的光学带隙与温度的关系,当GeH4流量为4sccm时,薄膜的光学带隙随温度的升高有一个最小值,当GeH4流量为8sccm时,温度升高而薄膜的光学带隙基本不变.     

表面外延生长初期的分形现象及数值模拟

利用“沉积－扩散－凝聚”模型,模拟研究了在分子束外延生长中粒子沉积、表面扩散、粒子凝聚以及成核生长不同过程对生长形貌的影响。结果表明,在表面外延生长初期沉积层现出非常丰富的分形几何特征,通过控制生长参数,可以得到不同微结构的团簇,分析得出最大岛密度与沉积／扩散速率比的标度指数为1／3,此结果与文献中的理论分析结果一致。     

Study on growth and properties of novel γ-LiAlO2 substrate

Transparent γ-LiAlO2 single crystal has been grown by Temperature Gradient technique. The surface of the wafer annealed in O2-atmosphere at 1100℃ for 70 h became opaque and Li-poor phase (LiAl5O8); while, that annealed in Li-rich atmosphere kept transparent and smooth. The full-width at half maximum value dropped to 30 arcsecs when the wafer was annealed in Li-rich atmosphere. That annealed in O2-atmosphere increased to 78 arcsec. Compared with absorption spectra, we can conclude that the 196 nm absorption peak was caused by Li vacancies and the 736 nm peak was caused by O vacancies.     

采用红外差谱技术精确测量光学晶体的吸收系数

采用红外光谱技术中的透射差谱方法,有效扣除了光学晶体表面镀膜以及晶体内光散射的影响,精确测定了晶体在特定波长处的吸收系数,为晶体的光谱表征提供了重要数据。     

GaN中一种新受主的发光性能研究

对两类未故意掺杂GaN样品 ,用He-Cd激光器 32 5nm线激发 ,进行光致发光性能测试 ,发现表面呈浅白色的样品出现一个新的发光峰 ,该峰在 30 0K时位于 3.146eV处 对此类样品进行变激发密度光致发光谱测试 ,发现此峰的峰位不随激发密度的变化而发生移动 ,其发光峰强与激发密度呈超线性关系 据此 ,把这一发光峰归结为导带电子到一种新受主能级的复合 ,并测得此受主离化能为 ( 2 99± 10 )meV     

反钙钛矿晶体Sc3AlN电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理的分子动力学方法,对立方反钙钛矿Sc3AlN的电子结构和光学性质进行了计算．系统分析了Sc3AlN电子结构和成键情况,并利用计算的能带结构和态密度分析了Sc3AlN的介电函数实部和虚部以及由它们派生出来的光学常数,即折射率、反射谱、吸收谱、光电导率和能量损失函数等．计算结果表明Sc3AlN属于导体材料,其价带主要由Al的2s2p,Sc的3d态电子构成,导带主要由Sc的3d态电子构成,静态介电常数ε1（O）=22．1,折射率n（0）=4．7．     

黄粉虫中甲壳素和壳聚糖的提取工艺研究

以微波干燥的黄粉虫为原料, 研究了索氏抽提法提取油脂、碱法脱除蛋白质、酸浸法去除灰分、次氯酸钠脱色和浓碱法脱乙酰基制备甲壳素和壳聚糖的工艺. 系统分析了不同工艺条件对甲壳素的残留蛋白质含量、灰分含量,壳聚糖的脱乙酰度、粘度的影响,得出制备甲壳素和壳聚糖的最佳工艺条件,以期为工业生产提供依据.     

二步法催化氧化苯甲醛合成苯甲酸工艺研究

采用2步法催化氧化苯甲醛合成苯甲酸,氧化剂为过氧化氢,催化剂为钨酸钠.其中过氧化氢分两次加入,第1次加入总量40%的过氧化氢,第2次加入剩余的过氧化氢.实验结果表明,2步法加入过氧化氢得到的苯甲酸收率为56.22%,明显高于1步法的苯甲酸的收率.对首次加入过氧化氢时的物料比进行了正交试验,最佳合成条件为n(H2O2)/n(Na2WO4.2H2O)n(NaHSO4)n(C6H5CHO)=100 1.2 1 250.同时考察了2步法反应的回流时间对收率的影响,结果表明第1步的反应时间3 h,第2步反应的时间5 h的反应条件最优.     

Study on optical constants inversion and infrared transmission characteristics of aerosol particles

Based on the experimental infrared spectral transmittances,an inverse model has been developed to determine the optical constants of the aerosol particles (SiO2 and Al2O3).Combined with the Mie theory and Kramers-Kronig (K-K) relations,the complex refractive indices of the SiO2 and Al2O3 particles are retrieved.The effects of the measurement errors on the inverse results are also investigated.With the optical constants inversed from the experiment,the discrete ordinate method (DOM) is used to calculate the infrared transmission characteristics of the aerosol particle cloud.Considering the multi-scattering and self-emission of the particles,the equivalent transmittance ratio (ETR) is suggested to evaluate the infrared transmission characteristics of the aerosol particles.Particular attention is given to analyze the effects of the volume fraction and diameters on infrared transmission characteristics.When the volume fraction is larger than 0.001,the particle diameter has little effect on the infrared transmission characteristics.For the uniform monodisperse particles in the detection waveband range of 3-5 μm and 8-12 μm,there exists a critical diameter where the ETR reaches the minimum value.In addition,the ETR of 3-5 μm is smaller than that of 8-12 μm with the same volume fraction and particle diameter.     

Effect of growth parameters on GaN in a vertical MOCVD reactor

A simulation of reactants in the transfer and reaction process during the GaN growth in a vertical MOCVD reactor is presented. The results show that the GaN growth rate and thickness uniformity are all affected by the chamber pressure and the velocity of reactants into the chamber. With the increasing velocity of reactants into the chamber, pre-reaction will be enhanced, GaN growth rate will be increased and thickness uniformity decreased. With the inlet velocity remaining the same and chamber pressure decreasing, the growth rate is improved within a certain scope, but the thickness uniformity may be increased at the same time with the thickness of the central region of the substrate increased.     

自适应弹性环光缓存结构设计及其网络性能分析

最大缓存时间限制、时延粒度限制、光分组长度限制3大限制因素,对传统光缓存器的前馈型和反馈型两种结构进行了分析。分析表明,影响光缓存器性能的3大限制因素在两种结构中的相互制约关系限制了光缓存器性能的进一步提高。在此基础上提出的一种自适应弹性环光缓存器(E-FLOB)结合了两种传统结构的优势,并分离了3大限制因素间的相互制约关系。结构分析显示,E-FLOB在缓存级数为16时可减少反馈型光缓存器噪声积累约3个数量级。网络性能仿真表明,弹性环结构比前馈型结构使用更少的缓存级数,获得比两种传统结构更低的分组丢失率。     

KBr晶体的生长及加工工艺研究

采用电阻加热Czochralski法和一控双变技术,在最佳工艺参数(转速:6 r/min～8 r/min;拉速:1 mm/h～2 mm/h;循环水温度:28℃ ±1℃;降温速率:8℃/h～10℃/h;轴向温度梯度:1℃/mm～2℃/mm)条件下,生长出了Φ96 mm×30 mm的KBr晶体.分析了晶体的潮解机理,采用饱...