Effect of CdSe nanoparticles incorporation on the performance of P3OT organic photovoltaic cells

Photoluminescence and photovoltaic properties of P3OT:%CdSe nanocomposite films are investigated as a function of the mass concentration (wt%) of the CdSe nanoparticles (NPs) incorporated in the films. The incorporation of CdSe NPs produces a quenching of the photoluminescence and improves the performance of the nanocomposite solar cells. These effects are explained in terms of exciton dissociation and charge separation occurring at P3OT/CdSe interfaces within the Förster formalism, involving non-radiative energy transfer from the donor (P3OT) to the acceptor (CdSe NPs). An exciton quenching rate constant of 1.4×10⁻¹⁰ cm³ s⁻¹ is determined using the Stern–Volmer equation. In addition, scanning electron microscopy (SEM) images reveal that surface morphology is changed by CdSe NPs incorporation, in agreement with FTIR spectra. The current density–voltage (J–V) characteristics of ITO/P3OT:%CdSe/Al photovoltaic cells performed for different CdSe concentrations are also reported and indicate a significant improvement of the photovoltaic parameters cells, particularly, the conversion efficiency becomes 20 times greater than that of the cell based on pure polymer.     

Optoelectronic characteristics of MEH-PPV polymer LEDs with thin,doped composition-graded a-SiC:H carrier injection layers

The optoelectronic characteristics of poly(2-methoxy-5-(2′ethyl-hexoxy)-1,4-phenylene-vinylene) (MEH-PPV) polymer LEDs (PLEDs) have been improved by employing thin doped composition-graded (CG) hydrogenated amorphous silicon–carbide (a-SiC:H) films as carrier injection layers and O₂-plasma treatment on indium–tin-oxide (ITO) transparent electrode, as compared with previously reported ones having doped constant-optical-gap a-SiC:H carrier injection layers. For PLEDs with an n-type a-SiC:H electron injection layer (EIL) only, the electroluminescence (EL) threshold voltage and brightness were improved from 7.3 V, 3162 cd/m² to 6.3 V, 5829 cd/m² (at a current density J = 0.6 A/cm²), respectively, by using the CG technique. The enhancement of EL performance of the CG technique was due to the increased electron injection efficiency resulting from a smoother barrier and reduced recombination of charge carriers at the EIL and MEH-PPV interface. Also, surface modification of the ITO transparent electrode by O₂-plasma treatment was used to further improve the EL threshold voltage and brightness of this PLED to 5.1 V, 6250 cd/m² (at J = 0.6 A/cm²). Furthermore, by employing the CG n[p]-a-SiC:H film as EIL [hole injection layer (HIL)] and O₂-plasma treatment on the ITO electrode, the brightness of PLEDs could be enhanced to 9350 cd/m² (at a J = 0.3 A/cm²), as compared with the 6450 cd/m² obtained from a previously reported PLED with a constant-optical-gap n-a-SiCGe:H EIL and p-a-Si:H HIL.     

High efficiency and non-color-changing orange organic light emitting diodes with red and green emitting layers

We report a high performance orange organic light-emitting diode (OLED) where red and green phosphorescent dyes are doped in an exciplex forming co-host as separate red and green emitting layers (EMLs). The OLED shows a maximum external quantum efficiency (EQE) of 22.8%, a low roll-off of efficiency with an EQE of 19.6% at 10,000 cd/m², and good orange color with a CIE coordinate of (0.442, 0.529) and no color change from 1000 to 10,000 cd/m². The exciplex forming co-host system distributes the recombination zone all over the EMLs and reduces the triplet exciton quenching processes.     

Long lived photoexcitation dynamics in π-conjugated polymer and fullerene blended films

We used continuous wave photoinduced absorption (PIA) spectroscopy to investigate long lived polarons in blend of [6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM) and regio-regular poly (3-hexylthiophene) (RR-P3HT), and in blend of PCBM and 2-methoxy-5-(2-ethylhexyloxy) poly(para-phenylenevinylene) (MEH-PPV). In millisecond time regime, delocalized polarons (DP) and localized polarons (LP) in RR-P3HT/PCBM as well as polarons in MEH-PPV/PCBM all exhibit dispersive bimolecular recombination process which was limited by the trap states, with the average lifetimes of those polarons inverse proportional to the square root of pump intensity (I). The recombination in RR-P3HT/PCBM was weak temperature dependence with small thermal activation energy, Δ for DPs and LPs of 25 meV and 13 meV, respectively; in contrast, Δ for polarons in amorphous MEH-PPV/PCBM was ～160 meV. Furthermore, we proved that the values of Δ for both of LP and DP increase, as well as the relatively intensity ratio of DP and LP decreases, in an intentionally degraded RR-P3HT/PCBM film. Overall, it is demonstrated that steady state photomodulation technique with thermal-activated-recombination analysis can be applied to evaluate polymer (dis)order in bulk heterojunction films.     

Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer

We report fabrication and electrical characterization of GaAs based metal-interfacial layer-semiconductor (MIS) device with poly[2-methoxy-5-(2^/-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV), as an interfacial layer. MEH-PPV raises the barrier height in Al/MEH-PPV/p-GaAs MIS device as high as to 0.87 eV. A Capacitance-Voltage (C–V) characteristic exhibits a low hysteresis voltage with an interface states density of 1.69×10¹¹ cm⁻² eV⁻¹. Moreover, a high transition frequency (f_c) of about 50 kHz was observed in the accumulation mode. The photovoltaic response of Al/MEH-PPV/p-GaAs device was measured under the air masses (AM) 1.0 and 1.5. The open circuit voltage (V_OC), short circuit current (I_SC), fill factor and the efficiency of the Al/MEH-PPV/p-GaAs device were found to be 1.10 V, 0.52 mA, 0.65, and 5.92%, respectively, under AM 1.0 condition.     

High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices

We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 × 10^?1 cm²/V s in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248% at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m² was improved by 22% and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications.     

Highly efficient blue and all-phosphorescent white polymer light-emitting devices based on polyfluorene host

We report efficient blue electrophosphorescent polymer light emitting devices with polyfluorene (PFO) as the host and iridium bis[2-(4,6-difluorophenyl)-pyridinato-N,C²] picolinate (FIrpic) as the dopant. Despite the low-lying triplet energy level of the polyfluorene polymer host, phosphorescent quenching can be suppressed by using poly(N-vinylcarbazole) (PVK) as anode buffer layer, resulting in a high luminous efficiency of 26.4 cd A^?1, which is one of the best results in the literature based on conjugated polymer reported to date. The reduced phosphorescent quenching is found to be associated with the exciton formation and charge carrier recombination within the PVK layer and the PVK/PFO interface due to the accumulation of holes. As compared with the devices based on non-conjugated host polymer PVK, the devices based on PFO showed a lower turn-on voltage (3.6 V vs. 4.4 V) and higher power efficiency (17 lm W^?1 vs. 8.3 lm W^?1) due to the higher mobility of PFO. When doubly doped with a newly synthesized yellow-emitting metallophosphor, white polymer light-emitting devices with superior device performance (a peak device efficiency of 40.9 cd A^?1, a CIE coordinates of (0.32, 0.48), and a power efficiency of 31.4 lm W^?1) was achieved. These findings can broaden our selection in polymer hosts for highly efficient phosphorescent blue emitting devices and can find potential applications in full color displays and solid-state lighting applications in the future.     

Alcohol-soluble polyfluorenes containing dibenzothiophene-S,S-dioxide segments for cathode interfacial layer in PLEDs and PSCs

A series of alcohol-soluble amino-functionalized polyfluorene derivatives (PF-N-S, PF-N-SC8 and PF-N-SOC8) comprising various ratios of dibenzothiophene-S,S-dioxide segments (S/SC8/SOC8) in the main chains, respectively, were synthesized and utilized as cathode interfacial layer (CIL) in polymer light-emitting diodes (PLEDs) and polymer solar cells (PSCs) with high-work-function Al (or Au) electrode. The polymers possess LUMO/HOMO levels at −2.78 to −3.53 eV/−5.69 to −6.32 eV. Multilayer PLEDs and PSCs with device configurations of ITO/PEDOT:PSS (40 nm)/P-PPV or PFO-DBT35:PCBM = 1:2 (80 nm)/CIL (3–15 nm)/Al (or Au) (100 nm) were fabricated. The PF-N-S-10/Al (or Au) cathode PLEDs displayed maximum luminous efficiency of 24.4 cd A⁻¹ (or 11.9 cd A⁻¹), significantly higher than bare Al (or Au) cathode device, exceeding well-known Ba/Al and poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN)/Al (or PFN/Au) cathode devices. The enhanced open-circuit voltages (V_ocs), electron reflux and reduced work functions clarify that the electron injection barrier from the Al (or Au) electrode can be lowered by inserting the polymers as CIL. The resulted PSCs also show device performances exceeding Al and PFN/Al cathode devices. The results indicate that PF-N-S, PF-N-SC8 and PF-N-SOC8 are excellent CIL materials for PLEDs and PSCs with high-work-function Al or Au electrode.     

Cathodoluminescence investigations of vertically stacked,sub-μm arrays of sidewall quantum wires on patterned GaAs (311)A substrates

Vertically stacked arrays of GaAs/(AlGa)As sidewall quantum wires (Qwires) were successfully fabricated on GaAs (311)A substrates patterned with 0.5 μm-pitch gratings. The Qwires exhibit a lateral confinement potential as large as 210 meV and high luminescence efficiency up to 300 K. The distinct carrier transfer and loss mechanisms are studied by temperature dependent, spectrally and spatially resolved cathodoluminescence. Despite the almost perfect carrier capture in the Qwires, non-radiative recombination within the connecting quantum well (Qwell) regions usually cannot be neglected even at low temperatures. For temperatures approaching 300 K, reemission of carriers out of the Qwell into the vertical (AlGa)As barriers contributes increasingly to the reduction of the carrier transfer and luminescence efficiency of the Qwires without notable repopulation of the connecting Qwells.     

Dual enhancing properties of LiF with varying positions inside organic light-emitting devices

A multilayer organic light-emitting device (OLED) has been fabricated with a thin (0.3 nm) lithium fluoride (LiF) layer inserted inside an electron transport layer (ETL), aluminum tris(8-hydroxyquinoline) (Alq₃). The LiF electron injection layer (EIL) has not been used at an Al/Alq₃ interface in the device on purpose to observe properties of LiF. The electron injection-limited OLED with the LiF layer inside 50 nm Alq₃ at a one forth, a half or a three forth position assures two different enhancing properties of LiF. When the LiF layer is positioned closer to the Al cathode, the injection-limited OLED shows enhanced injection by Al interdiffusion. The Al interdiffusion at least up to 12.5 nm inside Alq₃ rules out the possible insulating buffer model in a small molecule bottom-emission (BE) OLED with a thin, less than one nanometer, electron injection layer (EIL). If the position is further away from the Al cathode, the Al diffusion reaches the LiF layer no longer and the device shows the electroluminescence (EL) enhancement without an enhanced injection. The suggested mechanism of LiF EL efficiency enhancer is that the thin LiF layer induces carrier trap sites and the trapped charges alters the distribution of the field inside the OLED and, consequently, gives a better recombination of the device. By substituting the Alq₃ ETL region with copper phthalocyanine (CuPc), all of the electron injection from the cathode of Al/CuPc interface, the induced recombination at the Alq₃ emitting layer (EML) by the LiF EL efficiency enhancer, and the operating voltage reduction from high conductive CuPc can be achieved. The enhanced property reaches 100 mA/cm² of current density and 1000 cd/m² of luminance at 5 V with its turn-on slightly larger than 2 V. The enhanced device is as good as our previously reported non-injection limited LiF EIL device [Yeonjin Yi, Seong Jun Kang, Kwanghee Cho, Jong Mo Koo, Kyul Han, Kyongjin Park, Myungkeun Noh, Chung Nam Whang, Kwangho Jeong, Appl. Phys. Lett. 86 (2005) 213502].     

White emission polymer light-emitting devices with efficient electron injection from alcohol/water-soluble polymer/Al bilayer cathode

We demonstrate highly efficient white emission polymer light-emitting diodes (WPLEDs) from multilayer structure formed by solution processed technique, in which alcohol/water-soluble polymer, poly [(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) was incorporated as electron-injection layer and Al as cathode. It was found that the device performance was very sensitive to the solvents from solution of which the PFN electron-injection layer was cast. Devices with electron-injection layer cast from methanol solution show degraded performance while the best device performance was obtained when mixed solvent of water and methanol with ratio of 1:3 was used. We attribute the variation in device performance to washing out the electron transport material in the emissive layer due to rinse effect. As a result of alleviative loss of electron transport material in the emissive layer, the optimized device with a peak luminous efficiency of 18.5 cd A^?1 for forward-viewing was achieved, which is comparable to that of the device with same emissive layer but with low work-function metal Ba cathode (16.6 cd A^?1). White emission color with Commission International de I’Eclairage coordinates of (0.321, 0.345) at current 10 mA cm^?2 was observed.     

Fluorene-based cathode interlayer polymers for high performance solution processed organic optoelectronic devices

A hydrophilic polyfluorene-based conjugated polyelectrolyte (CPE) Poly[9,9-bis(4′-(6″-(diethanolamino)hexyloxy) phenyl)fluorene], PPFN-OH (Scheme 1) has been synthesized and utilized as cathode interlayer for both polymer light emitting diodes (PLEDs) and solar cells (PSCs). For comparison, another CPE namely Poly[9,9-bis(6′-(diethanolamino)hexyl)fluorene] (PFN-OH) has also been investigated. They comprise the same polyfluorene backbone structures with, respectively, diethanolaminohexyl (PFN-OH) and diethanolaminohexoxyphenyl (PPFN-OH) substituents attached to the C9 carbon of the fluorene repeat unit. In comparison to reference devices with more reactive Ca/Al cathodes, utilizing these CPEs as interlayers allowed an Al cathode to be used for blue light emission PLEDs, yielding 51% and 92% enhancement of maximum luminous efficiency (LE) for PFN-OH and PPFN-OH, respectively. The PLEDs with PPFN-OH showed both higher maximum LE and maximum luminance (L) (LE = 2.53 cd/A at 6.2 V, L = 9917 cd/m² at 8.3 V) than devices with PFN-OH (2.00 cd/A at 4.1 V, 3237 cd/m² at 7.2 V). The PPFN-OH PLEDs also showed no significant roll-off in efficiency with increasing current density up to 400 mA/cm², indicating excellent electron injection ability and stability for this interlayer. The insertion of alkoxy-phenyl groups at the C9-position in PPFN-OH is clearly advantageous. This simple modification significantly improves the CPE cathode interlayer performance. Parallel investigations of the electron extraction properties of PPFN-OH in inverted architecture PSCs with PCDTBT:PC₇₀BM bulk heterojunction active layers demonstrated a power conversion efficiency enhancement of ∼19% (from 4.99% to 5.95%) for indium tin oxide cathode devices compared with reference devices using Ca/Al cathodes. These results confirm PPFN-OH to be a promising interlayer material for high performance solution processed organic optoelectronic devices.     

Effects of solution-processed polymer interlayers on hole injection and device performance of polymer light-emitting diodes

We present studies of current density and photometric efficiency using three well known, commercially available polyphenylenevinylene and polyfluorene based light-emitting polymers (LEPs) with different interlayers. The thin, spin-coated interlayers of poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine) (TFB) and poly[9,9-dioctyl-fluorene-co-(bis-N,N′-(3-carboxyphenyl)-bis-N,N′-phenylbenzidine)] (BFA) are placed between the poly(3,4-ethylenedioxythiophene)/polystyrenesulphonic acid (PEDOT:PSS) anode and the LEP. It is found that despite having very similar HOMO levels (±0.1 eV) to the LEPs, the interlayers alter both the hole injection efficiency and the photometric efficiency of PLED devices. The increase or decrease of these depends on the particular interlayer-LEP combination involved, but there is a strong, general correlation between poorer hole injection resulting in a higher photometric efficiency. We attribute the variation in hole injection to the altered morphology and contact area at the anode interfaces, with the possible involvement of mobility-dependant space-charge effects or charge trapping. The dominant process in improving the photometric efficiency must be better electron-hole current balance, and/or the shift of the recombination zone to a more favourable position with less exciton quenching. The interlayers do not act as electron blocking layers, but hole injection enhancement by electron injection does seem to occur. These results show that interlayers can both increase and decrease device performance, depending on the interlayer-LEP combination involved.     

Flexible top-emitting warm-white organic light-emitting diodes with highly luminous performances and extremely stable chromaticity

The flexible top-emitting white organic light-emitting diode (FTEWOLED) with a very high efficiency but a significant color alteration is achieved with a blue/red/blue sandwiched tri-emission-layer. The voltage-dependent recombination region alternation and the emission mechanism are systematically investigated through a delta-doping method and the time-resolved transient photoluminescence lifetime measurement. By locating the main exciton recombination region at the 4,4′,4″-Tris(carbazol-9-yl)-triphenylamine (TCTA) and 9,9-spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1) interface, replacing the carrier-trapping red dopant guest with an orange guest that utilizes energy transfer mechanism, and using a P–I–N structure together with the FIrpic blue guest dopant to balance the electron and hole carriers, an extremely color stable and a very high efficient FTEWOLED is fabricated, with the resulting high current and power efficiencies of 22.7 cd/A and 14.27 lm/W, and a warm white illumination with a small chromaticity variation of (−0.0087, +0.0015) over a broad luminance range of more than four orders of magnitude. In addition, the performances can be further improved to 23,340 cd/m², 24.49 cd/A and 15.39 lm/W with a slight concentration alteration of the orange emitter.     

High performance dye-sensitized solar cells (DSSCs) achieved via electrophoretic technique by optimizing of photoelectrode properties

This paper describes a simple method utilizing electrophoretic deposition (EPD) of commercial P25 nanoparticles (NPs) films on fluoride-doped tin oxide (FTO) substrate. In this process, voltage and the number of deposition cycles are well controlled to achieve TiO₂ film thickness of around 1.5–26 μm, without any mechanical compression processing. The experimental results indicate that the TiO₂ film thickness plays an important role as the photoelectrode in DSSCs because it adsorbs a large number of dye molecules which are responsible for electrons supply. Furthermore, it was found that effects of the bulk traps and surface states within the TiO₂ films on the recombination of the photo-injected electrons (electron–hole pairs) strongly depend on the TiO₂ electrode annealing temperature. Finally, a DSSC with a 24 μm thick TiO₂ film and annealed at 500 °C produced the highest conversion efficiency (η=6.56%, I_SC=16.4, V_OC=0.72, FF=0.55) with an incident solar energy of 100 mW/cm².     

Comparison of small amounts of polycrystalline donor materials in C70-based bulk heterojunction photovoltaics and optimization of dinaphthothienothiophene based photovoltaic

Comparative studies of the effects of a series of polycrystalline donors on the performance of 95 wt.%-C₇₀-based bulk-heterojunction (BHJ) photovoltaics were conducted. A BHJ based on the wide band-gap molecule dinaphthothienothiophene (DNTT) shows power conversion efficiency (η_PCE) of up to 4.28%. The photovoltaic parameters are superior to those of devices using the similar molecule pentacene (PEN) or polycrystalline copper phthalocyanine (CuPc) for donor concentrations from 5 to 30 wt.%. The low-lying DNTT ionization potential and the high μ_h in the DNTT blend support the excellent DNTT device performance. The low performance of BHJs with 5 wt.% PEN and 5 wt.% CuPc may stem from strong exciplex recombination in the PEN:C₇₀ blend and limited hole mobility combined with geminate polaron-pair recombination in the CuPc:C₇₀ blend. The zero-field hole mobility of the blends with 5 wt.% donor has a positive correlation with the corresponding device performance. The η_PCE of a 5 wt.%-DNTT BHJ cell was improved to 4.92% by optimizing the cathode buffer layer.     

Synthesis and characterization of fluorene-based copolymers as electron-transporting materials for PLEDs

Owing to their low cost, easy processing, and the possibility of flexible fabrication, polymer light-emitting diodes (PLEDs) are emerging as an important class of materials. Despite promising characteristics, the relatively easy ionization of the well-known low-work-function cathodes such as Ca and Ba prevents the full usage of these materials. Herein, we report the syntheses of three alcohol-soluble conjugated polymers with different conjugation lengths and electron affinities as electron injection and transport materials for PLEDs: poly[9,9-bis(2-dihexylaminoethoxy)fluorene-co-tetrafluorobenzene] (PFOH-1), poly[9,9-bis(2-dihexylaminoethoxy)fluorene-co-thiophene] (PFOH-2), and poly[9,9-bis(2-dihexylaminoethoxy)fluorene-co-benzo-thiadiazole] (PFOH-3). For comparison, devices using Al, Ca, and Al cathodes were also fabricated. The device based on the Al cathode showed lower performance with a luminescence efficiency of 0.93 cd/A and a luminance of 248 cd/m²; that based on the low-work-function metal Ca as the cathode showed a near-threefold increase in luminescence efficiency at 2.51 cd/A and brightness at 856 cd/m² owing to greatly enhanced electron injection from the cathode; and the device employing the PFOH-3/Al cathode exhibited a luminescence efficiency of 2.35 cd/A and a brightness of 667 cd/m² at a current density of 35 mA/cm², which is comparable with the performance of the device with the Ca cathode.     

Spin–orbital coupling induced high-field decay of magneto-electroluminescence in pristine Alq3-based organic light-emitting diodes

We explored mechanisms for the high-field (|B| > 50 mT) decay of organic magneto-electroluminescence. The organic/metal interface in pristine tris (8-hydroxyquinolinato) aluminum-based organic light-emitting diodes was modified by changing the metal cathodes and their deposition methods. The metals investigated were Al, Au, and Cu and the methods used include molecular beam deposition, thermal resistive evaporation, and electron beam evaporation (EBE), respectively. Experimental results revealed that the high-field decay can be observed at room temperature when the cathode is: (i) Cu deposited by EBE or (ii) Au deposited by any of the three deposition methods. Furthermore, this decay is different from the previously reported high-field decay that originates from triplet–triplet annihilation, triplet-charge reaction processes or Δg mechanism. We suggest that the magnetic field can increase the extent of overlap between the electron–hole recombination zone and the organic/metal interface by suppressing electron mobility. The spin–orbital coupling at the organic/metal interface consequently induces intersystem crossing to increase with magnetic field leading to the observed high-field decay.     

D–π–A organic dyes with various bulky amine-typed donor moieties for dye-sensitized solar cells employing the cobalt electrolyte

SGT dyes containing various amine-typed donors as triphenylamine, bis-fluorenylamine and bis-phenothiazinylamine as the electron donor and a cyanoacrylic acid moiety as electron acceptor in D–π–A system, were developed to use in dye-sensitized solar cells (DSSCs). The SGT-102 dye containing bis-fluorenylamine had a better prevented charge recombination than other SGT dyes; leading to improvement in V_oc. As a result, the conversion efficiency of 7.22% was achieved with a J_sc of 12.1 mA cm⁻², V_oc of 865 mV and a FF of 69.1 for the DSSC employing a dye containing the bulky bis-fluorenylamine donor unit, while the DSSC based on a dye containing the bulky bis-phenothiazinylamine donor unit showed a lower J_sc and V_oc, leading to a lower efficiency of 5.16%, due to slow charge recombination associated with differently geometric structure orientations.     

Efficiency enhancement in organic solar cells by configuring hybrid interfaces with narrow bandgap PbSSe nanocrystals

We hereby present an incorporation technique for inorganic nanocrystals (NCs) in organic solar cells (OSCs) for the improvement of power conversion efficiency (PCE). Ternary PbSSe NCs constitute stable conformations with regular poly(3-hexylthiophene):phenyl-C₇₀ butyric acid methyl ester (P3HT:PCBM) organic composites under two heterojunction systems, and significant solar performance modification was obtained, depending on the incorporation type. Bilayer heterojunction (Bi-HJ) SCs, in which a pristine NC layer is sandwiched between the organic composite and cathode, showed significantly broadened photon-harvesting resulting from combination of both layers and energetic carrier transport as a result of reduced recombination losses. In contrast, bulk heterojunction (BHJ) SCs comprising combined composites of P3HT:PCBM:NCs in a single layer suffered from inefficient charge transport as a result of ubiquitous charge traps. Use of Bi-HJ cells with an NC layer of optimal thickness greatly enhanced the short-circuit current (J_SC) to 10.54 mA cm^?2 and a PCE of 3.12% was achieved; this is a 31% improvement over the conversion efficiency of purely organic cells without NCs. The separate PbSSe NC layer coupled well with the organic composite to provide a broad-range photon-harvesting ability and vertically efficient interfacial junctions for systematic charge transport; this greatly enhances the photovoltaic performances of the OSCs.