玻璃相与陶瓷金属化技术

本文叙述了陶瓷金属化技术的发展过程和玻璃相在金属化技术中的重要作用.讨论了几种主要金属化机理,提出了陶瓷中玻璃相和金属化层中玻璃相的相互关系.     

毫米波真空电子器件用陶瓷金属化技术

综述了毫米波真空电子器件用金属化技术,着重强调了金属化组分(氢化钛)和烧结工艺对金属化层介电损耗的影响。     

试论微波印制板孔金属化加工技术

本文在简单介绍印制板孔金属化加工技术的基础上,对微波印制板孔金属化加工技术进行了较为详细的论述。     

低价位生产特陶材料和经济金属化技术

叙述了低价生产特陶材料和经济金属化的重要性和生产技术，主要包括高压绝缘子瓷，低含量Al2O3瓷以及经济金属化技术等，文中对纳米金属化技术的前景也作了某些评价。     

陶瓷高熔点金属的金属化

本文从1938年德国人开发的德律风根法(Mo金属化法)开始,及其发展至完善的Mo/Mn金属化技术,直至本世纪八十年代,纵观了整个高熔点金属金属化发展史。其次,详细地介绍了金属化方法——干式金属化法和湿式金属化法。对于氧化铝瓷的成分、金属化膏的组成、高熔点金属的颗粒大小及烧成温度等对接合强度的影响也予以较为详细的介绍。     

印制板金属化孔工艺研究

本文总结了当前最流行的孔金属化新工艺做了比较深入地分析，并对金属化孔的技术要求，金属化孔的工艺过程、金属化孔的质量检查、金属化孔的发展动向和印制板加工的质量控制等五个部分来进行具体的叙述。     

高精度碳纤维复合材料天线金属化技术

阐述了碳纤维复合材料的金属化技术,通过对比工艺实验,确定了高精度碳纤维复合材料天线的最佳金属化工艺。     

等离子体去钻污与凹蚀技术在刚挠结合线路板中的应用

介绍了等离子体去钻污和凹蚀技术对刚挠结合印制线路板孔金属化的影响,与高锰酸钾、硫酸及没有去钻污的线路板孔金属化效果进行了对比,结果表明：等离子体去刚挠结合印制线路板钻污和凹蚀技术,能使孔金属化取得较好的效果。     

LTCC互连基板金属化孔工艺研究

LTCC基板互连金属化孔工艺技术是低温共烧陶瓷工艺过程中的关键技术,它直接影响陶瓷基板的成品率和可靠性。文章从影响互连金属化孔的因素出发,介绍了金属化通孔填充工艺及控制技术、金属化通孔材料热应力的影响、金属化通孔材料收缩率的控制等三方面技术,并给出了如下的解决方案。采用合适的通孔填充工艺技术和工艺参数;合理设计控制通孔浆料的收缩率和热膨胀系数,使通孔填充浆料与生瓷带的收缩尽量一致,以便降低材料的热应力;金属化通孔烧结收缩率的控制可以通过导体层的厚度、烧结曲线与基板烧结收缩率的关系、叠片热压的温度和压力等方面来实现。     

碳纤维复合材料制件表面金属化的几种工艺方法

主要讨论了碳纤维复合材料制件的表面金属化技术，着重介绍了真空蒸镀、真空离子溅射、电铸法和金属喷涂转移法等四种金属化方法。可根据制件的具体情况选择最适宜的金属化方法。     

AIN陶瓷厚膜金属化研究进展

简要论述了AIN陶瓷由于自身结构特点而导致的其厚膜金属化的困难、提出了解决的主要方法。阐述了AIN陶瓷厚膜金属化的三种主要结合剂（玻璃结合系；反应结合系；混合结合系）的结合机理，综述了三种主要结合剂以及AIN陶瓷厚膜金属化用金属体系的研究现状及最新进展。     

微孔沉镀铜前处理研究

对微孔金属化前处理进行了深入的研究。利用正交实验确定了等离子清洗的最佳条件,利用全面实验研究了等离子清洗,超声波清洗,PI调整等在微孔沉镀铜方面的应用,并通过重复性实验证明了以上实验结论的可靠性,从而实现了在公司现有条件下微孔金属化的目标。     

AlN陶瓷厚膜金属化研究进展

简要论述了AlN陶瓷由于自身结构特点而导致的其厚膜金属化的困难、提出了解决的主要方法。阐述了AlN陶瓷厚膜金属化的三种主要结合剂(玻璃结合系;反应结合系;混合结合系)的结合机理,综述了三种主要结合剂以及AlN陶瓷厚膜金属化用金属体系的研究现状及最新进展。     

How to design optimal metallization patterns for solar cells

Solar cells have a metallization pattern to collect the current. Generally, simple metallization patterns, such as the H-grid metallization pattern, a cross-hatched pattern or a full metallization, are used. With the widely used technique of screen printing, however, virtually any metallization pattern of any topology can be realized, but the problem is how to design the optimum topology. The paper presents a design method for optimal metallization patterns. Copyright © 1999 John Wiley & Sons, Ltd.     

多次金属化烧结的初步探讨

通过二/三次金属化烧结实验,对提高陶瓷金属化质量进行初步探讨.     

Feature size limit of liftoff metallization technology

The feature size limits for liftoff metallization technology are evaluated both experimentally and by computer simulation following Blech's model. The mechanism producing a smoothly sloped metallization pattern profile was also clarified. The simulation reveals that the average slope angle of the metallization pattern sidewalls is determined by the reverse mask topology, metallization thickness, and the maximum incident angle of the evaporation system used for the metallization deposition. Simulation results showed good coincidence with experimental results. It is shown that the average slope angle can be controlled between 20° and 70° with polyimide liftoff technology. Feature size limit, i.e., the minimum pitch of metallization patterns, is determined by the reverse mask topology and the maximum incident angle as well as by mechanical and chemical properties of the polyimide layer, but is independent of metallization thickness. In a sample application of the technology in the fabrication of interconnections on rugged LSI surfaces, the minimum pitch of the polyimide liftoff metallization patterns was estimated to be 2.6 µm.     

95%Al2O3陶瓷的MoO3体系低温金属化机理研究

本文采用由MoO₃加活化剂组成的配方对氧化铝陶瓷进行低温金属化,通过对氧化铝陶瓷、金属化层的显微结构及元素的分布情况来探索氧化铝陶瓷的低温金属化机理。研究发现金属化层中大部分MoO₃还原成活性较好的Mo颗粒,Mo颗粒间相互烧结连通为主体金属海绵骨架,同时少量的Mo氧化物与MnO、Al₂O₃、SiO 2、CaO等形成玻璃熔体,MnO、Al₂O₃、SiO 2、CaO之间也会形成MnO-Al₂O₃-SiO₂-CaO系玻璃熔体,从而获得致密、Mo金属与玻璃熔体相互缠绕、包裹的金属化层。金属化层中的两种玻璃熔体先后渗透、扩散进入氧化铝陶瓷晶界从而实现陶瓷与金属化层之间的连接。金属化层中还原的Mo金属与Ni层之间形成Mo-Ni合金,从而实现Ni层与金属化层之间的结合。     

Feature Size Limit of Liftoff Metallization Technology

The feature size limits for liftoff metallization technology are evaluated both experimentally and by computer simulation following Blech's model. The mechanism producing a smoothly sloped metallization pattern profile was also clarified. The simulation reveals that the average slope angle of the metallization pattern sidewalls is determined by the reverse mask topology, metallization thickness, and the maximum incident angle of the evaporation system used for the metallization deposition. Simulation results showed good coincidence with experimental results. It is shown that the average slope angle can be controlled between 20/spl deg/and 70/spl deg/ with polyimide liftoff technology. Feature size limit, i.e., the minimum pitch of metallization patterns, is determined by the reverse mask topology and the maximum incident angle as well as by mechanical and chemical properties of the polyimide layer, but is independent of metallization thickness. In a sample application of the technology in the fabrication of interconnections on rugged LSI surfaces, the minimum pitch of the polyimide liftoff metallization patterns was estirriated to be 2.6 /spl mu/m.     

Ag/Ni Metallization Bilayer: A Functional Layer for Highly Efficient Polycrystalline SnSe Thermoelectric Modules

The structural and electrical characteristics of Ag/Ni bilayer metallization on polycrystalline thermoelectric SnSe were investigated. Two difficulties with thermoelectric SnSe metallization were identified for Ag and Ni single layers: Sn diffusion into the Ag metallization layer and unexpected cracks in the Ni metallization layer. The proposed Ag/Ni bilayer was prepared by hot-pressing, demonstrating successful metallization on the SnSe surface without interfacial cracks or elemental penetration into the metallization layer. Structural analysis revealed that the Ni layer reacts with SnSe, forming several crystalline phases during metallization that are beneficial for reducing contact resistance. Detailed investigation of the Ni/SnSe interface layer confirms columnar Ni-Sn intermetallic phases [(Ni₃Sn and Ni₃Sn₂) and Ni_5.63SnSe₂] that suppress Sn diffusion into the Ag layer. Electrical specific-contact resistivity (5.32 × 10^?4 Ω cm²) of the Ag/Ni bilayer requires further modification for development of high-efficiency polycrystalline SnSe thermoelectric modules.     

Full-wave analysis of coplanar strips considering the finite stripmetallization thickness

An extensive analysis, based on a full-wave mode-matching technique, is described for coplanar strips (CPS) incorporating the strips' finite metallization thickness. Results for the effective dielectric constant and characteristic impedance are presented to show the effect of the metallization thickness. It is found that the characteristic impedance has a strong dependence on the metallization thickness, which signifies the fact that the finite metallization thickness needs to be considered in designing practical microwave circuits employing CPS. Numerical results of CPS with zero metallization thickness obtained using this method are found to be in good agreement with those published previously. Extensive investigation of the numerical convergence of these results is also described