Structural and electrical properties of RuO2 thin films prepared by rf-magnetron sputtering and annealing at different temperatures

Conductive ruthenium oxide (RuO₂) thin films have been deposited at different substrate temperatures on various substrates by radio-frequency (rf) magnetron sputtering and were later annealed at different temperatures. The thickness of the films ranges from 50 to 700 nm. Films deposited at higher temperatures show larger grain size (about 140 nm) with (200) preferred orientation. Films deposited at lower substrate temperature have smaller grains (about 55 nm) with (110) preferred orientation. The electrical resistivity decreases slightly with increasing film thickness but is more influenced by the deposition and annealing temperature. Maximum resistivity is 861 μΩ cm, observed for films deposited at room temperature on glass substrates. Minimum resistivity is 40 μΩ cm observed for a thin film (50 nm) deposited at 540°C on a quartz substrate. Micro-Raman investigations indicate that strain-free well-crystallized thin films are deposited on oxidized Si substrates.     

Growth of copper thin films on sputtered-TiN surfaces by metallorganic chemical vapour deposition from (hfac)Cu(I)(VTMS)

Copper (Cu) films were deposited on sputtered TiN with metallorganic chemical vapour deposition (MOCVD) from (hexafluoroacetylacetonate) Cu^(I) (vinyltrimethylsilane) [(hfac)Cu^(I)(VTMS)] at substrate temperatures of 100–300°C, total pressures of 10–2000 mtorr (1–300 Pa) and bubbler temperature of 50°C with Ar carrier gas. Cu was deposited in the form of discontinuous islands up to the film thickness of about 100 nm on the TiN substrate. The orientation of growing films was changed from random orientation to 〈1 1 1〉 with increasing deposition time and temperature. Increasing temperature increased the surface roughness of the film, and grain coalescence. Resistivity was increased due to the carbon incorporation from the thermal decomposition of Cu precursor. This revised version was published online in July 2006 with corrections to the Cover Date.     

Elasto-plastic properties of gold thin films deposited onto polymeric substrates

This work examines mechanical properties of 50–300 nm gold thin films deposited onto micrometer-thick flexible polymer substrates by means of tensile testing of the film–substrate system and modeling. The film properties are extracted from mechanical testing of the film–substrate system and modeling of the bimaterial. Unlike materials in bulk geometry, the film elastic modulus and yield strength present an important dependence with film thickness, with modulus and yield strength of about 520 and 30 GPa, respectively, for the thinner films and decreasing toward the bulk value as the film thickness increases. The relation between grain size, film thickness, and yield strength is examined. Finite element analysis provides further insight into the stress distribution in the film–substrate system. L. Llanes—MS student at ITM, Merida, Mexico.     

Grain growth of copper films prepared by chemical vapour deposition

Copper films having thickness 600 nm were prepared on TiN using chemical vapour deposition (CVD). The deposited films were annealed at various temperatures (350–550°C) in Ar and H₂(10%)-Ar ambients. The changes in the grain size of the films upon annealing were investigated. Annealing in an H₂(10%)-Ar ambient produced normal grain growth; annealing in an Ar ambient caused grain growth to stop at 550°C. The grain size followed a monomodal distribution and the mean size increased in proportion to the square root of the annealing time, indicating the curvature of the grain is the main driving force for grain growth. Upon annealing at 450°C for 30 min in an H₂(10%)-Ar ambient, the average grain size of the film increased from 122 nm to 219 nm, and the resistivity decreased from 2.35 μΩ cm to 2.12 μΩ cm at a film thickness of 600 nm. This revised version was published online in July 2006 with corrections to the Cover Date.     

Microstructure and magnetic properties of zinc ferrite thin films produced by pulsed laser deposition

Zinc ferrite thin films were deposited from a target of zinc ferrite onto a MgO substrate using XeCl excimer laser operating at 308 nm and frequency of 30 Hz. The crystallographic characterizations of the films were performed using X-ray diffraction (XRD). Microstructure, surface morphology, chemical composition and grain size, as well as surface roughness were obtained from scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM). The magnetic properties of the thin films were studied in the temperature range 5–300 K and in fields of up to 5 T using SQUID magnetometry. Data on temperature and field dependence of magnetization provide a strong evidence for superparamagnetism. Paper presented at 8 AGM of MRSI, BARC, Mumbai, 1997.     

Structural,optical, electrical and morphological properties of ZnTe films deposited by electron beam evaporation

ZnTe films were deposited on glass substrates at different substrate temperatures in the range 30–300 °C. The thickness of the films was about 200 nm. The films exhibited cubic structure with preferential orientation in the (111) direction. Band gap values in the range 2.34–2.26 eV are observed with increase of the substrate temperature. The refractive index values are in the range of 2.55–2.92 for the films deposited at different substrate temperatures. It is observed that the conductivity increases continuously with temperature. Laser Raman studies indicated the presence of peaks at 206.9 and 412.2 cm⁻¹corresponding to the first order and second order LO phonon.     

Thermoelectric and Magnetothermoelectric Properties of In-doped Nano-ZnO Thin Films Prepared by RF Magnetron Sputtering

Nano In-doped ZnO (IZO) films were deposited on glass substrates by RF magnetron sputtering from a powder target (2at% In) at different substrate temperatures. The thermoelectric and magnetothermoelectric properties of the IZO films were investigated. It shows that the prepared IZO films are c-axis oriented, the grain size is about 22–29 nm, and both the thermoeletromotive force (thermo-emf) and the magneto thermo-emf change linearly with temperature difference, implying that a striking thermoelectric (Seebeck) effect and magnetothermoelectric effect can be apparently observed in IZO films. The thermo-emf is negative, the Seebeck coefficient is about −57, −32, −40 and −66 μV/K for samples deposited at the substrate temperature of room temperature, 100, 200, 300°C, respectively. The power factor is (3.11–5.89)×10⁻⁵ W/K² m for our thin films. The absolute value of the magnetothermo-emf is smaller than the thermo-emf without a magnetic field, showing that the magnetic field has a negative effect on the Seebeck coefficient, which can be explained by the magnetoresistive effect substantially.     

Ambient temperature stabilization of crystalline zirconia thin films deposited by direct current magnetron sputtering

Nanocrystalline zirconia thin films have been deposited on borosilicate glass substrates at ambient temperature by direct current (dc) magnetron sputtering. The present study demonstrates the possibility of growing zirconium oxide films in 100% pure oxygen dc plasma. Films of thickness of the order of 500 nm have been grown using a metallic Zr target in pure oxygen plasma. Interestingly, the presence of high temperature polymorphs of ZrO₂ is observed in films deposited with 40, 60 and 80% oxygen in the sputtering gas, while only the monoclinic phase is observed at lower and higher oxygen percentages. The refractive index in this range of oxygen percentages peaks at 1.85 in the dispersion free region. The crystallite size in the films varies between 11-25 nm, as calculated from X-ray diffraction patterns and is dependent on oxygen percentage in the sputtering gas. The grain sizes observed in atomic force microscope images are in the range 38 to 45 nm. The dielectric constants of the films, measured at microwave frequencies [8-12 GHz] ranged between 13-19.2.     

Characteristics of pulse electrodeposited PbS thin films

PbS thin films were deposited for the first time using the pulse electrodeposition technique at different duty cycles in the range of 9 to 50% and at room temperature using lead nitrate and sodium thiosulphate. The thickness of the films increased from 0.5 to 1.0 μm with increase of duty cycle. The films were polycrystalline and exhibited cubic structure. The band gap of the films deposited at 50% duty cycle is 0.42 eV. The resistivities of the films decreased from 0.9 to 0.5 × 10⁵ ohm cm as the duty cycle increased. Films with grain size in the range of 20 to 35 nm were deposited. Films with refractive index varying in the range of 4.45–3.75 with increase of wavelength were obtained. Films with higher photosensitivity and higher detectivity compared to earlier reports were obtained.     

Magnetic and optical properties of amorphous NdFeCo thin films by pulsed laser deposition technique

Rare earth and transition metal doped (NdFeCo) thin films were fabricated on Si (100) substrate by pulsed laser deposition technique keeping the substrate at constant temperature of 300 °C. A KrF Excimer laser (248 nm, 20 ns) was used as an energy source for the deposition. Thin films were deposited without and under the influence of transverse magnetic field applied across the plume. The applied magnetic field was varied from 3 to 6 kOe. The deposited films were characterized by XRD, FESEM, VSM and SE (Spectroscopic Ellipsometry). The deposited films were amorphous in nature. All the films regardless of the applied magnetic field exhibit perpendicular magnetic anisotropy. The thickness of the thin films was found to increase monotonically from 166 to 266 nm with the increase in the applied external magnetic field. The saturation magnetization has a maximum value of 1682 emu/cc for the film deposited under 4.5 kOe magnetic field. The value of optical band gap energy for the same film is found to have a maximum value of 3.1 eV. The values of both the saturation magnetization and the band gap energy were decreased with the increase in the applied magnetic field.     

Optical and structural characterization of r.f. sputtered CeO2 thin films

The optical and structural properties of r.f. sputtered CeO2 thin films deposited on Pyrex substrates have been studied as a function of substrate temperature during deposition. The refractive index, n, extinction coefficient, k, and bandgap of the films were calculated from reflectance, R, and transmittance, T, spectra in the wavelength range 340–900 nm. The refractive index of CeO2 films at 550 nm comprises values from about 2.25–2.4 depending on the substrate temperature during deposition. The extinction coefficient was negligible for wavelength values higher than 400 nm. The value obtained for the bandgap was 3.1 eV. The X-ray diffraction patterns showed the same (f c c) cubic structure with preferential orientation depending on substrate temperature during deposition. The scanning force microscope measurements showed that the roughness and grain size of the CeO2 films increase with increasing substrate temperature. This revised version was published online in November 2006 with corrections to the Cover Date.     

Grain-size dependence of coercive force in sputtered and annealed iron films

Magnetic properties such as coercive force, initial susceptibility, etc., are structure sensitive parameters. Especially, the coercive force depends on the existence of crystal defects such as dislocations and grain boundaries. In this study, the grain-size dependence of coercive force was investigated in an iron film, 150 nm in thickness, deposited by sputtering method on a (001) KCl substrate at room temperature. The grain size of the film was changed from 15 to 120 nm by annealing in a vacuum. The coercive force increased with the increase of grain size and was proportional to the square of grain size. The magnetic domain had a ripple structure when the grain size was smaller than 50 nm. A grain size larger than 50 nm led to an irregular domain wall configuration and the formation of domain walls in the grain.     

Thickness dependent electrical properties of CdO thin films prepared by spray pyrolysis method

A large number of thin films of cadmium oxide have been prepared on glass substrates by spray pyrolysis method. The prepared films have uniform thickness varying from 200–600 nm and good adherence to the glass substrate. A systematic study has been made on the influence of thickness on resistivity, sheet resistance, carrier concentration and mobility of the films. The resistivity, sheet resistance, carrier concentration and mobility values varied from 1·56–5·72×10⁻³ Ω-cm, 128–189 Ω/□, 1·6–3·9×10²¹ cm⁻³ and 0·3–3 cm²/Vs, respectively for varying film thicknesses. A systematic increase in mobility with grain size clearly indicates the reduction of overall scattering of charge carriers at the grain boundaries. The large concentration of charge carriers and low mobility values have been attributed to the presence of Cd as an impurity in CdO microcrystallites. Using the optical transmission data, the band gap was estimated and found to vary from 2·20–2·42 eV. These films have transmittance around 77% and average reflectance is below 2·6% in the spectral range 350–850 nm. The films aren-type and polycrystalline in nature. SEM micrographs of the CdO films were taken and the films exhibit clear grains and grain boundary formation at a substrate temperature as low as 523 K.     

Novel process for low temperature crystallization of a-SiC:H for optoelectronic applications

Metal-induced crystallization (MIC) process was employed to crystallize hydrogenated amorphous silicon carbide (a-SiC:H) films deposited by PECVD on n-type Si substrate. To optimize the crystallization process, Aluminum thin films of different thicknesses were deposited on a-SiC:H films which were then annealed at 600 °C in N₂ environment for 1 h. UV–visible spectrophotometer, atomic force microscopy (AFM) and hall measurement system were used to characterize the films. It was observed from the UV–visible spectrum that the films crystallized using higher Al thickness show absorption in the visible range whereas the samples crystallized with lower Al thickness did not show absorption in the visible range but shows large absorption above the bandgap of the material. Considering UV–visible and Hall measurement data it can be concluded that the sample crystallized with 50 nm of Al can be a good candidate for SiC–Si hetero-junction solar cells.     

Synthesis of single nanocrystal phase γ′-Fe4N on NaCl substrate by DC magnetron sputtering

The single-phase γ′-Fe₄N nanocrystal magnetic films with grain size of d = 40–60 nm were synthesized on single crystal NaCl (1 0 0) substrate by DC magnetron sputtering at 150 °C. The structure, morphology of the single-phase γ′-Fe₄N films were characterized using transmission electron microscopy (TEM), X-ray diffraction (XRD), and the magnetic properties of samples prepared at different substrate temperatures were investigated by superconducting quantum interference device (SQUID). It is shown that substrate temperature has a significant influence on the crystalline structure and magnetic properties for Fe–N films. As substrate temperature was increased, the saturation magnetization for the deposited films increased, but the coercivity reduced.     

Enhanced electrical properties of PZT thick films prepared by sol–gel technique through step-by-step crystallization process

[Pb(Zr_xTi_1-x)O₃: PZT] films at morphotropic phase boundary composition (x = 0.52) were deposited on bare Si, ZrO₂/Si and Pt/Ti/SiO₂/Si substrates by sol–gel spin on technique. Films deposited on the bare Si and ZrO₂/Si substrates had low degree of crystallization and micro cracks. Well crystallized films with smooth microstructure were obtained on Pt/Ti/SiO₂/Si substrates. Further, the thickness of the films on Pt/Ti/SiO₂/Si substrate was increased up to ~1 μm by step-by-step crystallization process. The single perovskite phase of the above films was confirmed with X-ray diffraction analysis. Films had enhanced dielectric properties at room temperature and the dielectric constant values were comparable to those of bulk values at Curie temperature (T_c) from the temperature dependent dielectric measurements. Films exhibit higher remnant polarization (P_r) and lower coercive field (E_c) values. Further, capacitance–voltage (C–V), current–voltage (I–V) measurements and rough estimation of piezoelectric coefficient of the films were carried out.     

The effect of substrate temperature on the oxidation behavior of erbium thick films

The effect of substrate temperature on the oxidation behavior of erbium thick films, fabricated by electron-beam vapor deposition (EBVD), was investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The erbium thick film is black when it is deposited at substrate temperature below 450 °C and turns gray at higher substrate temperature in a vacuum pressure of approximately 1.5 × 10⁻⁶ Torr, which indicates that the thickness of erbium oxide layer formed on the surface of erbium films increases with the decreasing substrate temperature. XPS depth profile results demonstrate that the thickness of the surface erbium oxide layer of erbium film deposited at substrate temperature of 550 and 350 °C are about 50 and 75 nm, respectively. The thicker oxide layer at lower substrate temperatures may be attributed to grain size and the dynamic vacuum condition around the substrates. Other possible factors involved in the oxidation behavior are also discussed.     

Luminescence from praseodymium doped AlN thin films deposited by RF magnetron sputtering and the effect of material structure and thermal annealing on the luminescence

Thin films of Praseodymium doped AlN are deposited on silicon (111) substrates at 77 K and 950 K by rf magnetron sputtering method. About 500–1000 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target of Al with Pr. X-rays diffraction results show that films deposited at 77 K are amorphous and those deposited at 950 K are crystalline. Cathodoluminescence studies are performed at room temperature and luminescence peaks are observed in a wide range from ultraviolet to infrared region. The most intense peak is obtained in green at 526 nm from amorphous films as a result from ³P₁→³H₅ transition. In crystalline films the intense peak was obtain in red at 648 nm as a result from ³P₀→³F₂ transition. Films are thermally activated at 1300 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence. Two peaks at 488 nm and 505 nm merged after thermal activation, giving rise to a single peak at 495 nm.     

Phosphorous and boron doping of nc-Si:H thin films deposited on plastic substrates at 150 °C by Hot-Wire Chemical Vapor Deposition

Gas-phase phosphorous and boron doping of hydrogenated nanocrystalline thin films deposited by HWCVD at a substrate temperature of 150 °C on flexible-plastic (polyethylene naphthalate, polyimide) and rigid-glass substrates is reported. The influence of the substrate, hydrogen dilution, dopant concentration and film thickness on the structural and electrical properties of the films was investigated. The dark conductivity of B- and P-doped films (σ_d = 2.8 S/cm and 4.7 S/cm, respectively) deposited on plastic was found to be somewhat higher than that found in similar films deposited on glass. n- and p-type films with thickness below ∼ 50 nm have values of crystalline fraction, activation energy and dark conductivity typical of doped hydrogenated amorphous silicon. This effect is observed both on glass and on plastic substrates.     

Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm<Subscript>2</Subscript>O<Subscript>3</Subscript> gate on n-type silicon substrate

Samarium oxide (Sm₂O₃) thin films with thicknesses in the range of 15–30 nm are deposited on n-type silicon (100) substrate via radio frequency magnetron sputtering. Effects of post-deposition annealing ambient [argon and forming gas (FG) (90% N₂ + 10% H₂)] and temperatures (500, 600, 700, and 800 °C) on the structural and electrical properties of deposited films are investigated and reported. X-ray diffraction revealed that all of the annealed samples possessed polycrystalline structure with C-type cubic phase. Atomic force microscope results indicated root-mean-square surface roughness of the oxide film being annealed in argon ambient are lower than that of FG annealed samples, but they are comparable at the annealing temperature of 700 °C (Argon—0.378 nm, FG—0.395 nm). High frequency capacitance–voltage measurements are carried out to determine effective oxide charge, dielectric constant and semiconductor-oxide interface trap density of the annealed oxide films. Sm₂O₃ thin films annealed in FG have smaller amount of effective oxide charge and semiconductor-oxide interface trap density than those oxide films annealed in argon. Current–voltage measurements are conducted to obtain barrier heights of the annealed oxide films during Fowler–Nordheim tunneling.